WO2009111473A3 - Method for curing a porous low dielectric constant dielectric film - Google Patents

Method for curing a porous low dielectric constant dielectric film Download PDF

Info

Publication number
WO2009111473A3
WO2009111473A3 PCT/US2009/035878 US2009035878W WO2009111473A3 WO 2009111473 A3 WO2009111473 A3 WO 2009111473A3 US 2009035878 W US2009035878 W US 2009035878W WO 2009111473 A3 WO2009111473 A3 WO 2009111473A3
Authority
WO
WIPO (PCT)
Prior art keywords
curing
dielectric film
dielectric constant
porous low
low dielectric
Prior art date
Application number
PCT/US2009/035878
Other languages
French (fr)
Other versions
WO2009111473A2 (en
Inventor
Junjun Liu
Dorel I. Toma
Eric M. Lee
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/043,814 external-priority patent/US7977256B2/en
Priority claimed from US12/043,772 external-priority patent/US7858533B2/en
Priority claimed from US12/043,835 external-priority patent/US20090226694A1/en
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2010549819A priority Critical patent/JP5490024B2/en
Priority to DE112009000518T priority patent/DE112009000518T5/en
Priority to CN2009801078443A priority patent/CN101960556B/en
Publication of WO2009111473A2 publication Critical patent/WO2009111473A2/en
Publication of WO2009111473A3 publication Critical patent/WO2009111473A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.
PCT/US2009/035878 2008-03-06 2009-03-03 Method for curing a porous low dielectric constant dielectric film WO2009111473A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010549819A JP5490024B2 (en) 2008-03-06 2009-03-03 Method of curing porous low dielectric constant dielectric film
DE112009000518T DE112009000518T5 (en) 2008-03-06 2009-03-03 A method of curing a porous dielectric film having a low dielectric constant
CN2009801078443A CN101960556B (en) 2008-03-06 2009-03-03 Method for curing a porous low dielectric constant dielectric film

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US12/043,814 US7977256B2 (en) 2008-03-06 2008-03-06 Method for removing a pore-generating material from an uncured low-k dielectric film
US12/043,814 2008-03-06
US12/043,835 2008-03-06
US12/043,772 US7858533B2 (en) 2008-03-06 2008-03-06 Method for curing a porous low dielectric constant dielectric film
US12/043,835 US20090226694A1 (en) 2008-03-06 2008-03-06 POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING
US12/043,772 2008-03-06

Publications (2)

Publication Number Publication Date
WO2009111473A2 WO2009111473A2 (en) 2009-09-11
WO2009111473A3 true WO2009111473A3 (en) 2010-01-14

Family

ID=41056604

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/035878 WO2009111473A2 (en) 2008-03-06 2009-03-03 Method for curing a porous low dielectric constant dielectric film

Country Status (6)

Country Link
JP (2) JP5490024B2 (en)
KR (1) KR101538531B1 (en)
CN (2) CN102789975B (en)
DE (1) DE112009000518T5 (en)
TW (1) TWI421939B (en)
WO (1) WO2009111473A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110232677A1 (en) * 2010-03-29 2011-09-29 Tokyo Electron Limited Method for cleaning low-k dielectrics
JP2012104703A (en) * 2010-11-11 2012-05-31 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device and substrate processing apparatus
CN104143524A (en) * 2013-05-07 2014-11-12 中芯国际集成电路制造(上海)有限公司 Manufacturing method for semiconductor device
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR20210107716A (en) 2019-01-22 2021-09-01 어플라이드 머티어리얼스, 인코포레이티드 Feedback loop to control the pulse voltage waveform
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030224544A1 (en) * 2001-12-06 2003-12-04 Shipley Company, L.L.C. Test method
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US20040096672A1 (en) * 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films
US20070105401A1 (en) * 2005-11-09 2007-05-10 Tokyo Electron Limited Multi-step system and method for curing a dielectric film

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596467B2 (en) * 2000-09-13 2003-07-22 Shipley Company, L.L.C. Electronic device manufacture
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
JP3726071B2 (en) * 2002-06-05 2005-12-14 東京エレクトロン株式会社 Heat treatment method
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
TWI240959B (en) * 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US6897162B2 (en) * 2003-10-20 2005-05-24 Wafermasters, Inc. Integrated ashing and implant annealing method
US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US20070173071A1 (en) * 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
JP2007214156A (en) * 2006-02-07 2007-08-23 Yatabe Hitoo Semiconductor device
JP2007324170A (en) * 2006-05-30 2007-12-13 Yoshimi Shiotani Irradiation device and semiconductor production system employing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692903B2 (en) * 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US20030224544A1 (en) * 2001-12-06 2003-12-04 Shipley Company, L.L.C. Test method
US20040096672A1 (en) * 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films
US20040096593A1 (en) * 2002-11-14 2004-05-20 Lukas Aaron Scott Non-thermal process for forming porous low dielectric constant films
US20070105401A1 (en) * 2005-11-09 2007-05-10 Tokyo Electron Limited Multi-step system and method for curing a dielectric film

Also Published As

Publication number Publication date
DE112009000518T5 (en) 2011-05-05
CN102789975B (en) 2015-10-14
KR101538531B1 (en) 2015-07-21
JP2014007416A (en) 2014-01-16
JP5490024B2 (en) 2014-05-14
CN101960556B (en) 2013-09-18
KR20120041641A (en) 2012-05-02
TW200949941A (en) 2009-12-01
CN102789975A (en) 2012-11-21
TWI421939B (en) 2014-01-01
JP2011514678A (en) 2011-05-06
CN101960556A (en) 2011-01-26
WO2009111473A2 (en) 2009-09-11

Similar Documents

Publication Publication Date Title
WO2009111473A3 (en) Method for curing a porous low dielectric constant dielectric film
WO2007055849A3 (en) Multi-step system and method for curing a dielectric film
WO2010022839A3 (en) Spectral purity filter and lithographic apparatus
WO2010033469A3 (en) Dielectric material treatment saystem and method of operating
WO2007059294A3 (en) Process for pulsed uv curing of coatings on wood
WO2007064450A3 (en) Ig window unit and method of making the same
WO2012048041A3 (en) Amine curing silicon-nitride-hydride films
WO2007130909A3 (en) Uv assisted thermal processing
WO2010150023A3 (en) Printing method
WO2008011447A3 (en) Apparatus and method for reducing power consumption of cable modem
WO2008149625A1 (en) Photosensitive adhesive composition, film-like adhesive, adhesive sheet, method for forming adhesive pattern, semiconductor wafer with adhesive layer, semiconductor device and method for manufacturing semiconductor device
EP2657365A3 (en) Method for removal of carbon from an organosilicate material
TW200618111A (en) Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device
WO2008139379A3 (en) Spectrum detector for uv radiation and manufacturing method therefore
TW201129667A (en) Fabricating method of film adhesive, adhesive sheet, semiconductor device and fabricating method thereof
WO2007019188A3 (en) Manufacture of photovoltaic devices
BRPI0818775A2 (en) Method of manufacturing an anti-reflective silica coating, resulting product, and photovoltaic device including it
WO2010065459A3 (en) Method of etching organosiloxane dielectric material and semiconductor device thereof
WO2003074198A3 (en) Water borne coating composition for film transfer and casting process
WO2009102617A3 (en) Device having power generating black mask and method of fabricating the same
WO2009148859A3 (en) Method and apparatus for uv curing with water vapor
WO2009114244A3 (en) Line width roughness improvement with noble gas plasma
WO2005069403A3 (en) Printing of organic electronic devices
WO2010009716A3 (en) Radiation-emitting device and method for producing a radiation-emitting device
TW200721524A (en) Method of releasing high temperature films and/or devices from metallic substrates

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980107844.3

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09717188

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2010549819

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1120090005187

Country of ref document: DE

ENP Entry into the national phase

Ref document number: 20107022355

Country of ref document: KR

Kind code of ref document: A

RET De translation (de og part 6b)

Ref document number: 112009000518

Country of ref document: DE

Date of ref document: 20110505

Kind code of ref document: P

122 Ep: pct application non-entry in european phase

Ref document number: 09717188

Country of ref document: EP

Kind code of ref document: A2