WO2008085252A3 - Mems device and electrical interconnects for same - Google Patents

Mems device and electrical interconnects for same Download PDF

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Publication number
WO2008085252A3
WO2008085252A3 PCT/US2007/025421 US2007025421W WO2008085252A3 WO 2008085252 A3 WO2008085252 A3 WO 2008085252A3 US 2007025421 W US2007025421 W US 2007025421W WO 2008085252 A3 WO2008085252 A3 WO 2008085252A3
Authority
WO
WIPO (PCT)
Prior art keywords
same
mems device
electrical interconnects
electrical interconnect
movable layer
Prior art date
Application number
PCT/US2007/025421
Other languages
French (fr)
Other versions
WO2008085252A2 (en
Inventor
Wonsuk Chung
Suryaprakash Ganti
Stephen Zee
Original Assignee
Qualcomm Mems Technologies Inc
Wonsuk Chung
Suryaprakash Ganti
Stephen Zee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Mems Technologies Inc, Wonsuk Chung, Suryaprakash Ganti, Stephen Zee filed Critical Qualcomm Mems Technologies Inc
Publication of WO2008085252A2 publication Critical patent/WO2008085252A2/en
Publication of WO2008085252A3 publication Critical patent/WO2008085252A3/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity

Abstract

A microelectromechanical systems device having an electrical interconnect (202) connected to at least one of an electrode (16a) and a movable layer (14) within the device. At least a portion of the electrical interconnect (202) is formed from the same material as a movable layer (14) of the device. A thin film (64), particularly formed of molybdenum, is provided underneath the electrical interconnect (202). The movable layer (14) preferably comprises aluminum.
PCT/US2007/025421 2006-12-20 2007-12-10 Mems device and electrical interconnects for same WO2008085252A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/613,922 US7706042B2 (en) 2006-12-20 2006-12-20 MEMS device and interconnects for same
US11/613,922 2006-12-20

Publications (2)

Publication Number Publication Date
WO2008085252A2 WO2008085252A2 (en) 2008-07-17
WO2008085252A3 true WO2008085252A3 (en) 2008-10-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/025421 WO2008085252A2 (en) 2006-12-20 2007-12-10 Mems device and electrical interconnects for same

Country Status (3)

Country Link
US (2) US7706042B2 (en)
TW (1) TW200846697A (en)
WO (1) WO2008085252A2 (en)

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US7706042B2 (en) * 2006-12-20 2010-04-27 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US8068268B2 (en) 2007-07-03 2011-11-29 Qualcomm Mems Technologies, Inc. MEMS devices having improved uniformity and methods for making them
US7863079B2 (en) 2008-02-05 2011-01-04 Qualcomm Mems Technologies, Inc. Methods of reducing CD loss in a microelectromechanical device
US7864403B2 (en) 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
US8363380B2 (en) 2009-05-28 2013-01-29 Qualcomm Incorporated MEMS varactors
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US8218228B2 (en) * 2009-12-18 2012-07-10 Qualcomm Mems Technologies, Inc. Two-terminal variable capacitance MEMS device
US20110148837A1 (en) * 2009-12-18 2011-06-23 Qualcomm Mems Technologies, Inc. Charge control techniques for selectively activating an array of devices
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US8988440B2 (en) * 2011-03-15 2015-03-24 Qualcomm Mems Technologies, Inc. Inactive dummy pixels
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9809445B2 (en) * 2011-08-26 2017-11-07 Qualcomm Incorporated Electromechanical system structures with ribs having gaps
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KR101936619B1 (en) * 2012-10-31 2019-01-09 엘지디스플레이 주식회사 Flexible organic electroluminescent device and method for fabricating the same
US9969613B2 (en) * 2013-04-12 2018-05-15 International Business Machines Corporation Method for forming micro-electro-mechanical system (MEMS) beam structure
US11033898B2 (en) 2014-02-01 2021-06-15 Ezmems Ltd. Fluidic microelectromechanical sensors/devices and fabrication methods thereof
CN106164636B (en) * 2014-02-01 2019-10-22 埃斯梅斯公司 For monitoring and adjusting the chip device and its manufacturing method of fluid flow
CN111434605B (en) * 2019-01-15 2023-08-29 台湾积体电路制造股份有限公司 Control method and test method for micro-electromechanical system device

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