WO2008027163A3 - Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication - Google Patents

Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication Download PDF

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Publication number
WO2008027163A3
WO2008027163A3 PCT/US2007/017481 US2007017481W WO2008027163A3 WO 2008027163 A3 WO2008027163 A3 WO 2008027163A3 US 2007017481 W US2007017481 W US 2007017481W WO 2008027163 A3 WO2008027163 A3 WO 2008027163A3
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WO
WIPO (PCT)
Prior art keywords
resistance variable
same
fabrication
arrays
methods
Prior art date
Application number
PCT/US2007/017481
Other languages
French (fr)
Other versions
WO2008027163A2 (en
Inventor
Jun Liu
Original Assignee
Micron Technology Inc
Jun Liu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Jun Liu filed Critical Micron Technology Inc
Priority to KR1020117011801A priority Critical patent/KR101159488B1/en
Priority to EP07836539.2A priority patent/EP2062305B1/en
Priority to KR1020097006441A priority patent/KR101169500B1/en
Priority to CN2007800379567A priority patent/CN101523629B/en
Publication of WO2008027163A2 publication Critical patent/WO2008027163A2/en
Publication of WO2008027163A3 publication Critical patent/WO2008027163A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/068—Patterning of the switching material by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa or cup type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

Abstract

A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material.
PCT/US2007/017481 2006-08-29 2007-08-06 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication WO2008027163A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020117011801A KR101159488B1 (en) 2006-08-29 2007-08-06 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
EP07836539.2A EP2062305B1 (en) 2006-08-29 2007-08-06 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
KR1020097006441A KR101169500B1 (en) 2006-08-29 2007-08-06 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
CN2007800379567A CN101523629B (en) 2006-08-29 2007-08-06 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/511,311 2006-08-29
US11/511,311 US7560723B2 (en) 2006-08-29 2006-08-29 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication

Publications (2)

Publication Number Publication Date
WO2008027163A2 WO2008027163A2 (en) 2008-03-06
WO2008027163A3 true WO2008027163A3 (en) 2008-05-02

Family

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PCT/US2007/017481 WO2008027163A2 (en) 2006-08-29 2007-08-06 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication

Country Status (5)

Country Link
US (3) US7560723B2 (en)
EP (5) EP2442377B1 (en)
KR (2) KR101169500B1 (en)
CN (1) CN101523629B (en)
WO (1) WO2008027163A2 (en)

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