WO2007146964A3 - Thin-film devices fromed from solid particles - Google Patents

Thin-film devices fromed from solid particles Download PDF

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Publication number
WO2007146964A3
WO2007146964A3 PCT/US2007/071048 US2007071048W WO2007146964A3 WO 2007146964 A3 WO2007146964 A3 WO 2007146964A3 US 2007071048 W US2007071048 W US 2007071048W WO 2007146964 A3 WO2007146964 A3 WO 2007146964A3
Authority
WO
WIPO (PCT)
Prior art keywords
group
iiia
temperature
alloy
thin
Prior art date
Application number
PCT/US2007/071048
Other languages
French (fr)
Other versions
WO2007146964A2 (en
Inventor
Matthew R Robinson
Chris Eberspacher
Duren Jeroen K J Van
Original Assignee
Matthew R Robinson
Chris Eberspacher
Duren Jeroen K J Van
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matthew R Robinson, Chris Eberspacher, Duren Jeroen K J Van filed Critical Matthew R Robinson
Priority to US12/304,683 priority Critical patent/US8071419B2/en
Priority to EP07798466A priority patent/EP2140482A2/en
Publication of WO2007146964A2 publication Critical patent/WO2007146964A2/en
Publication of WO2007146964A3 publication Critical patent/WO2007146964A3/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells

Abstract

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 2O0C and about 2000C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
PCT/US2007/071048 2006-06-12 2007-06-12 Thin-film devices fromed from solid particles WO2007146964A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/304,683 US8071419B2 (en) 2006-06-12 2007-06-12 Thin-film devices formed from solid particles
EP07798466A EP2140482A2 (en) 2006-06-12 2007-06-12 Thin-film devices fromed from solid particles

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US80456906P 2006-06-12 2006-06-12
US80456606P 2006-06-12 2006-06-12
US80456706P 2006-06-12 2006-06-12
US80456506P 2006-06-12 2006-06-12
US60/804,566 2006-06-12
US60/804,569 2006-06-12
US60/804,565 2006-06-12
US60/804,567 2006-06-12
US80464706P 2006-06-13 2006-06-13
US80464906P 2006-06-13 2006-06-13
US60/804,647 2006-06-13
US60/804,649 2006-06-13

Publications (2)

Publication Number Publication Date
WO2007146964A2 WO2007146964A2 (en) 2007-12-21
WO2007146964A3 true WO2007146964A3 (en) 2008-02-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/071048 WO2007146964A2 (en) 2006-06-12 2007-06-12 Thin-film devices fromed from solid particles

Country Status (3)

Country Link
US (9) US8071419B2 (en)
EP (1) EP2140482A2 (en)
WO (1) WO2007146964A2 (en)

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US20130034932A1 (en) 2013-02-07
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US20100029036A1 (en) 2010-02-04
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US20100291758A1 (en) 2010-11-18
US8617640B2 (en) 2013-12-31
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US20110114182A1 (en) 2011-05-19
US20080057203A1 (en) 2008-03-06

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