WO2007134247A3 - Dynamic cell bit resolution - Google Patents
Dynamic cell bit resolution Download PDFInfo
- Publication number
- WO2007134247A3 WO2007134247A3 PCT/US2007/068802 US2007068802W WO2007134247A3 WO 2007134247 A3 WO2007134247 A3 WO 2007134247A3 US 2007068802 W US2007068802 W US 2007068802W WO 2007134247 A3 WO2007134247 A3 WO 2007134247A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bit resolution
- dynamic cell
- cell bit
- memory cells
- resolution
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
Abstract
A system and method, including computer software, is used to write to a flash memory device (100) that includes multiple memory cells (124). One or more of the memory cells are written at a first resolution corresponding to a first number of bits of data. A signal to write at a second resolution corresponding to a second number of bits of data is received (815). One or more of the memory cells are written at the second resolution.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80035706P | 2006-05-15 | 2006-05-15 | |
US60/800,357 | 2006-05-15 | ||
US11/694,712 | 2007-03-30 | ||
US11/694,712 US7639531B2 (en) | 2006-05-15 | 2007-03-30 | Dynamic cell bit resolution |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007134247A2 WO2007134247A2 (en) | 2007-11-22 |
WO2007134247A3 true WO2007134247A3 (en) | 2008-03-06 |
Family
ID=38684931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/068802 WO2007134247A2 (en) | 2006-05-15 | 2007-05-11 | Dynamic cell bit resolution |
Country Status (2)
Country | Link |
---|---|
US (2) | US7639531B2 (en) |
WO (1) | WO2007134247A2 (en) |
Families Citing this family (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100877609B1 (en) * | 2007-01-29 | 2009-01-09 | 삼성전자주식회사 | Semiconductor memory system performing data error correction using flag cell array of buffer memory and driving method thereof |
US7958301B2 (en) * | 2007-04-10 | 2011-06-07 | Marvell World Trade Ltd. | Memory controller and method for memory pages with dynamically configurable bits per cell |
WO2009037697A2 (en) | 2007-09-20 | 2009-03-26 | Densbits Technologies Ltd. | Improved systems and methods for determining logical values of coupled flash memory cells |
WO2009095902A2 (en) | 2008-01-31 | 2009-08-06 | Densbits Technologies Ltd. | Systems and methods for handling immediate data errors in flash memory |
US8694715B2 (en) | 2007-10-22 | 2014-04-08 | Densbits Technologies Ltd. | Methods for adaptively programming flash memory devices and flash memory systems incorporating same |
WO2009053961A2 (en) | 2007-10-25 | 2009-04-30 | Densbits Technologies Ltd. | Systems and methods for multiple coding rates in flash devices |
WO2009072105A2 (en) | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | A low power chien-search based bch/rs decoding system for flash memory, mobile communications devices and other applications |
WO2009072103A2 (en) * | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated bch codes and/or designation of 'first below' cells |
US8321625B2 (en) | 2007-12-05 | 2012-11-27 | Densbits Technologies Ltd. | Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith |
JP2009140564A (en) * | 2007-12-06 | 2009-06-25 | Toshiba Corp | Nand flash memory and memory system |
WO2009074979A2 (en) | 2007-12-12 | 2009-06-18 | Densbits Technologies Ltd. | Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications |
WO2009074978A2 (en) | 2007-12-12 | 2009-06-18 | Densbits Technologies Ltd. | Systems and methods for error correction and decoding on multi-level physical media |
WO2009078006A2 (en) | 2007-12-18 | 2009-06-25 | Densbits Technologies Ltd. | Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith |
TWI362667B (en) * | 2007-12-31 | 2012-04-21 | Phison Electronics Corp | Data writing method for flash memory and controller thereof |
KR101466698B1 (en) * | 2008-02-19 | 2014-11-28 | 삼성전자주식회사 | Memory device and memory data read method |
KR101434405B1 (en) | 2008-02-20 | 2014-08-29 | 삼성전자주식회사 | Memory device and memory data read method |
KR101378365B1 (en) * | 2008-03-12 | 2014-03-28 | 삼성전자주식회사 | Apparatus and method for hybrid detecting memory data |
US8972472B2 (en) | 2008-03-25 | 2015-03-03 | Densbits Technologies Ltd. | Apparatus and methods for hardware-efficient unbiased rounding |
US8060719B2 (en) | 2008-05-28 | 2011-11-15 | Micron Technology, Inc. | Hybrid memory management |
US8332725B2 (en) | 2008-08-20 | 2012-12-11 | Densbits Technologies Ltd. | Reprogramming non volatile memory portions |
JP5422976B2 (en) * | 2008-11-19 | 2014-02-19 | 富士通株式会社 | Semiconductor memory device |
US9449719B2 (en) * | 2008-12-19 | 2016-09-20 | Seagate Technology Llc | Solid-state storage device including a high resolution analog-to-digital converter |
US8819385B2 (en) | 2009-04-06 | 2014-08-26 | Densbits Technologies Ltd. | Device and method for managing a flash memory |
US8458574B2 (en) | 2009-04-06 | 2013-06-04 | Densbits Technologies Ltd. | Compact chien-search based decoding apparatus and method |
US8566510B2 (en) | 2009-05-12 | 2013-10-22 | Densbits Technologies Ltd. | Systems and method for flash memory management |
US8868821B2 (en) | 2009-08-26 | 2014-10-21 | Densbits Technologies Ltd. | Systems and methods for pre-equalization and code design for a flash memory |
US8305812B2 (en) | 2009-08-26 | 2012-11-06 | Densbits Technologies Ltd. | Flash memory module and method for programming a page of flash memory cells |
US9330767B1 (en) | 2009-08-26 | 2016-05-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory module and method for programming a page of flash memory cells |
US8995197B1 (en) | 2009-08-26 | 2015-03-31 | Densbits Technologies Ltd. | System and methods for dynamic erase and program control for flash memory device memories |
US8730729B2 (en) | 2009-10-15 | 2014-05-20 | Densbits Technologies Ltd. | Systems and methods for averaging error rates in non-volatile devices and storage systems |
US8724387B2 (en) | 2009-10-22 | 2014-05-13 | Densbits Technologies Ltd. | Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages |
US8626988B2 (en) | 2009-11-19 | 2014-01-07 | Densbits Technologies Ltd. | System and method for uncoded bit error rate equalization via interleaving |
US9037777B2 (en) | 2009-12-22 | 2015-05-19 | Densbits Technologies Ltd. | Device, system, and method for reducing program/read disturb in flash arrays |
US8607124B2 (en) | 2009-12-24 | 2013-12-10 | Densbits Technologies Ltd. | System and method for setting a flash memory cell read threshold |
US8402203B2 (en) * | 2009-12-31 | 2013-03-19 | Seagate Technology Llc | Systems and methods for storing data in a multi-level cell solid state storage device |
US8700970B2 (en) | 2010-02-28 | 2014-04-15 | Densbits Technologies Ltd. | System and method for multi-dimensional decoding |
US8527840B2 (en) | 2010-04-06 | 2013-09-03 | Densbits Technologies Ltd. | System and method for restoring damaged data programmed on a flash device |
US8516274B2 (en) | 2010-04-06 | 2013-08-20 | Densbits Technologies Ltd. | Method, system and medium for analog encryption in a flash memory |
US8745317B2 (en) | 2010-04-07 | 2014-06-03 | Densbits Technologies Ltd. | System and method for storing information in a multi-level cell memory |
US9021177B2 (en) | 2010-04-29 | 2015-04-28 | Densbits Technologies Ltd. | System and method for allocating and using spare blocks in a flash memory |
US8539311B2 (en) | 2010-07-01 | 2013-09-17 | Densbits Technologies Ltd. | System and method for data recovery in multi-level cell memories |
US8621321B2 (en) | 2010-07-01 | 2013-12-31 | Densbits Technologies Ltd. | System and method for multi-dimensional encoding and decoding |
US20120008414A1 (en) | 2010-07-06 | 2012-01-12 | Michael Katz | Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system |
US8964464B2 (en) | 2010-08-24 | 2015-02-24 | Densbits Technologies Ltd. | System and method for accelerated sampling |
US8508995B2 (en) | 2010-09-15 | 2013-08-13 | Densbits Technologies Ltd. | System and method for adjusting read voltage thresholds in memories |
US9063878B2 (en) | 2010-11-03 | 2015-06-23 | Densbits Technologies Ltd. | Method, system and computer readable medium for copy back |
US8850100B2 (en) | 2010-12-07 | 2014-09-30 | Densbits Technologies Ltd. | Interleaving codeword portions between multiple planes and/or dies of a flash memory device |
US8782495B2 (en) | 2010-12-23 | 2014-07-15 | Sandisk Il Ltd | Non-volatile memory and methods with asymmetric soft read points around hard read points |
US8099652B1 (en) * | 2010-12-23 | 2012-01-17 | Sandisk Corporation | Non-volatile memory and methods with reading soft bits in non uniform schemes |
US8498152B2 (en) | 2010-12-23 | 2013-07-30 | Sandisk Il Ltd. | Non-volatile memory and methods with soft-bit reads while reading hard bits with compensation for coupling |
US10079068B2 (en) | 2011-02-23 | 2018-09-18 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Devices and method for wear estimation based memory management |
US8693258B2 (en) | 2011-03-17 | 2014-04-08 | Densbits Technologies Ltd. | Obtaining soft information using a hard interface |
US8990665B1 (en) | 2011-04-06 | 2015-03-24 | Densbits Technologies Ltd. | System, method and computer program product for joint search of a read threshold and soft decoding |
US9195592B1 (en) | 2011-05-12 | 2015-11-24 | Densbits Technologies Ltd. | Advanced management of a non-volatile memory |
US9110785B1 (en) | 2011-05-12 | 2015-08-18 | Densbits Technologies Ltd. | Ordered merge of data sectors that belong to memory space portions |
US8996790B1 (en) | 2011-05-12 | 2015-03-31 | Densbits Technologies Ltd. | System and method for flash memory management |
US9372792B1 (en) | 2011-05-12 | 2016-06-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US9501392B1 (en) | 2011-05-12 | 2016-11-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Management of a non-volatile memory module |
US9396106B2 (en) | 2011-05-12 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US8667211B2 (en) | 2011-06-01 | 2014-03-04 | Densbits Technologies Ltd. | System and method for managing a non-volatile memory |
US8713404B2 (en) * | 2011-07-01 | 2014-04-29 | Apple Inc. | Controller interface providing improved data reliability |
US8588003B1 (en) | 2011-08-01 | 2013-11-19 | Densbits Technologies Ltd. | System, method and computer program product for programming and for recovering from a power failure |
US9389805B2 (en) | 2011-08-09 | 2016-07-12 | Seagate Technology Llc | I/O device and computing host interoperation |
US8890300B2 (en) | 2011-09-01 | 2014-11-18 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory comprising off-die read/write-voltage generator |
US9024425B2 (en) | 2011-09-01 | 2015-05-05 | HangZhou HaiCun Information Technology Co., Ltd. | Three-dimensional memory comprising an integrated intermediate-circuit die |
US9117493B2 (en) | 2011-09-01 | 2015-08-25 | Chengdu Haicun Ip Technology Llc | Discrete three-dimensional memory comprising off-die address/data translator |
US8553468B2 (en) | 2011-09-21 | 2013-10-08 | Densbits Technologies Ltd. | System and method for managing erase operations in a non-volatile memory |
TWI454922B (en) * | 2011-12-19 | 2014-10-01 | Phison Electronics Corp | Memory storage device and memory controller and data writing method thereof |
US8699266B2 (en) | 2012-01-30 | 2014-04-15 | HGST Netherlands B.V. | Implementing enhanced data write for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding |
US9208871B2 (en) | 2012-01-30 | 2015-12-08 | HGST Netherlands B.V. | Implementing enhanced data read for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding |
US8792272B2 (en) | 2012-01-30 | 2014-07-29 | HGST Netherlands B.V. | Implementing enhanced data partial-erase for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding |
US8947941B2 (en) | 2012-02-09 | 2015-02-03 | Densbits Technologies Ltd. | State responsive operations relating to flash memory cells |
US8996788B2 (en) | 2012-02-09 | 2015-03-31 | Densbits Technologies Ltd. | Configurable flash interface |
US8996793B1 (en) | 2012-04-24 | 2015-03-31 | Densbits Technologies Ltd. | System, method and computer readable medium for generating soft information |
US8839073B2 (en) * | 2012-05-04 | 2014-09-16 | Lsi Corporation | Zero-one balance management in a solid-state disk controller |
US8838937B1 (en) | 2012-05-23 | 2014-09-16 | Densbits Technologies Ltd. | Methods, systems and computer readable medium for writing and reading data |
US8879325B1 (en) | 2012-05-30 | 2014-11-04 | Densbits Technologies Ltd. | System, method and computer program product for processing read threshold information and for reading a flash memory module |
US9921954B1 (en) | 2012-08-27 | 2018-03-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and system for split flash memory management between host and storage controller |
US9368225B1 (en) | 2012-11-21 | 2016-06-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Determining read thresholds based upon read error direction statistics |
US9171620B2 (en) | 2012-11-29 | 2015-10-27 | Sandisk Technologies Inc. | Weighted read scrub for nonvolatile memory |
US9069659B1 (en) | 2013-01-03 | 2015-06-30 | Densbits Technologies Ltd. | Read threshold determination using reference read threshold |
US9098205B2 (en) | 2013-01-30 | 2015-08-04 | Sandisk Technologies Inc. | Data randomization in 3-D memory |
US9136876B1 (en) | 2013-06-13 | 2015-09-15 | Densbits Technologies Ltd. | Size limited multi-dimensional decoding |
US9230656B2 (en) | 2013-06-26 | 2016-01-05 | Sandisk Technologies Inc. | System for maintaining back gate threshold voltage in three dimensional NAND memory |
JP6275427B2 (en) * | 2013-09-06 | 2018-02-07 | 株式会社東芝 | Memory control circuit and cache memory |
US9240238B2 (en) | 2013-09-20 | 2016-01-19 | Sandisk Technologies Inc. | Back gate operation with elevated threshold voltage |
US9413491B1 (en) | 2013-10-08 | 2016-08-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System and method for multiple dimension decoding and encoding a message |
US9397706B1 (en) | 2013-10-09 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System and method for irregular multiple dimension decoding and encoding |
US9786388B1 (en) | 2013-10-09 | 2017-10-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Detecting and managing bad columns |
US9348694B1 (en) | 2013-10-09 | 2016-05-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Detecting and managing bad columns |
US20150121156A1 (en) | 2013-10-28 | 2015-04-30 | Sandisk Technologies Inc. | Block Structure Profiling in Three Dimensional Memory |
US9536612B1 (en) | 2014-01-23 | 2017-01-03 | Avago Technologies General Ip (Singapore) Pte. Ltd | Digital signaling processing for three dimensional flash memory arrays |
US10120792B1 (en) | 2014-01-29 | 2018-11-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Programming an embedded flash storage device |
US9230689B2 (en) | 2014-03-17 | 2016-01-05 | Sandisk Technologies Inc. | Finding read disturbs on non-volatile memories |
US9542262B1 (en) | 2014-05-29 | 2017-01-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Error correction |
US8918577B1 (en) | 2014-06-13 | 2014-12-23 | Sandisk Technologies Inc. | Three dimensional nonvolatile memory with variable block capacity |
US9892033B1 (en) | 2014-06-24 | 2018-02-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Management of memory units |
US9584159B1 (en) | 2014-07-03 | 2017-02-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Interleaved encoding |
US9972393B1 (en) | 2014-07-03 | 2018-05-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accelerating programming of a flash memory module |
US9449702B1 (en) | 2014-07-08 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Power management |
US9524211B1 (en) | 2014-11-18 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Codeword management |
US10305515B1 (en) | 2015-02-02 | 2019-05-28 | Avago Technologies International Sales Pte. Limited | System and method for encoding using multiple linear feedback shift registers |
US9690656B2 (en) * | 2015-02-27 | 2017-06-27 | Microsoft Technology Licensing, Llc | Data encoding on single-level and variable multi-level cell storage |
US10628255B1 (en) | 2015-06-11 | 2020-04-21 | Avago Technologies International Sales Pte. Limited | Multi-dimensional decoding |
US9851921B1 (en) | 2015-07-05 | 2017-12-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory chip processing |
US9954558B1 (en) | 2016-03-03 | 2018-04-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Fast decoding of data stored in a flash memory |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5541886A (en) * | 1994-12-27 | 1996-07-30 | Intel Corporation | Method and apparatus for storing control information in multi-bit non-volatile memory arrays |
WO2001063615A1 (en) * | 2000-02-25 | 2001-08-30 | Advanced Micro Devices, Inc. | User selectable cell programming |
US20050007801A1 (en) * | 2001-09-17 | 2005-01-13 | Ron Barzilai | Multi-purpose non-volatile memory card |
US20050052934A1 (en) * | 2003-09-09 | 2005-03-10 | Tran Hieu Van | Unified multilevel cell memory |
US20050180209A1 (en) * | 2004-02-15 | 2005-08-18 | M-Systems Flash Disk Pioneers, Ltd. | Method of managing a multi-bit-cell flash memory |
Family Cites Families (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5570986A (en) | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Semiconductor intergrated circuit device |
US4831403A (en) | 1985-12-27 | 1989-05-16 | Minolta Camera Kabushiki Kaisha | Automatic focus detection system |
DE69033262T2 (en) | 1989-04-13 | 2000-02-24 | Sandisk Corp | EEPROM card with replacement of faulty memory cells and buffer |
US5109496A (en) | 1989-09-27 | 1992-04-28 | International Business Machines Corporation | Most recently used address translation system with least recently used (LRU) replacement |
US5218569A (en) | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
US5663901A (en) | 1991-04-11 | 1997-09-02 | Sandisk Corporation | Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems |
US6230233B1 (en) | 1991-09-13 | 2001-05-08 | Sandisk Corporation | Wear leveling techniques for flash EEPROM systems |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
WO1993022770A1 (en) | 1992-05-01 | 1993-11-11 | Motorola, Inc. | Method and apparatus for storage of digital information |
US5412601A (en) | 1992-08-31 | 1995-05-02 | Nippon Steel Corporation | Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell |
EP0613151A3 (en) | 1993-02-26 | 1995-03-22 | Tokyo Shibaura Electric Co | Semiconductor memory system including a flash EEPROM. |
US5424978A (en) | 1993-03-15 | 1995-06-13 | Nippon Steel Corporation | Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same |
US5394450A (en) * | 1993-04-13 | 1995-02-28 | Waferscale Integration, Inc. | Circuit for performing arithmetic operations |
US7137011B1 (en) | 1993-09-01 | 2006-11-14 | Sandisk Corporation | Removable mother/daughter peripheral card |
JP3205658B2 (en) | 1993-12-28 | 2001-09-04 | 新日本製鐵株式会社 | Reading method of semiconductor memory device |
US5440524A (en) | 1994-02-01 | 1995-08-08 | Integrated Device Technology, Inc. | Method and apparatus for simuilataneous long writes of multiple cells of a row in a static ram |
US5629890A (en) | 1994-09-14 | 1997-05-13 | Information Storage Devices, Inc. | Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method |
US5867721A (en) * | 1995-02-07 | 1999-02-02 | Intel Corporation | Selecting an integrated circuit from different integrated circuit array configurations |
US5745409A (en) | 1995-09-28 | 1998-04-28 | Invox Technology | Non-volatile memory with analog and digital interface and storage |
KR0157122B1 (en) | 1995-12-23 | 1999-02-18 | 김광호 | A/d converter |
JPH09205615A (en) | 1996-01-25 | 1997-08-05 | Canon Inc | Recorder |
US5726934A (en) | 1996-04-09 | 1998-03-10 | Information Storage Devices, Inc. | Method and apparatus for analog reading values stored in floating gate structures |
US5712815A (en) | 1996-04-22 | 1998-01-27 | Advanced Micro Devices, Inc. | Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells |
JP3709246B2 (en) | 1996-08-27 | 2005-10-26 | 株式会社日立製作所 | Semiconductor integrated circuit |
US5754566A (en) | 1996-09-06 | 1998-05-19 | Intel Corporation | Method and apparatus for correcting a multilevel cell memory by using interleaving |
US6023781A (en) | 1996-09-18 | 2000-02-08 | Nippon Steel Corporation | Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program |
JPH10124381A (en) | 1996-10-21 | 1998-05-15 | Mitsubishi Electric Corp | Semiconductor storage device |
US6097638A (en) | 1997-02-12 | 2000-08-01 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US5828592A (en) | 1997-03-12 | 1998-10-27 | Information Storage Devices, Inc. | Analog signal recording and playback integrated circuit and message management system |
US5909449A (en) | 1997-09-08 | 1999-06-01 | Invox Technology | Multibit-per-cell non-volatile memory with error detection and correction |
JP4074697B2 (en) | 1997-11-28 | 2008-04-09 | 株式会社ルネサステクノロジ | Semiconductor device |
US6072676A (en) | 1998-04-13 | 2000-06-06 | Analog Devices, Inc. | Protection circuit for an excitation current source |
US6208542B1 (en) | 1998-06-30 | 2001-03-27 | Sandisk Corporation | Techniques for storing digital data in an analog or multilevel memory |
EP1005213A3 (en) | 1998-11-02 | 2000-07-05 | Information Storage Devices, Inc. | Multiple message multilevel analog signal recording and playback system containing configurable analog processing functions |
US6134141A (en) * | 1998-12-31 | 2000-10-17 | Sandisk Corporation | Dynamic write process for high bandwidth multi-bit-per-cell and analog/multi-level non-volatile memories |
US6058060A (en) | 1998-12-31 | 2000-05-02 | Invox Technology | Multi-bit-per-cell and analog/multi-level non-volatile memories with improved resolution and signal-to noise ratio |
US7139196B2 (en) | 1999-01-14 | 2006-11-21 | Silicon Storage Technology, Inc. | Sub-volt sensing for digital multilevel flash memory |
TW417381B (en) | 1999-04-01 | 2001-01-01 | Mustek Systems Inc | Conversion method for increasing the bits of scanning signals of scanner |
JP2001052476A (en) | 1999-08-05 | 2001-02-23 | Mitsubishi Electric Corp | Semiconductor device |
JP2001067884A (en) | 1999-08-31 | 2001-03-16 | Hitachi Ltd | Nonvolatile semiconductor memory device |
US6097636A (en) * | 1999-09-03 | 2000-08-01 | Silicon Storage Technology, Inc. | Word line and source line driver circuitries |
US6166960A (en) | 1999-09-24 | 2000-12-26 | Microchip Technology, Incorporated | Method, system and apparatus for determining that a programming voltage level is sufficient for reliably programming an eeprom |
JP2001110184A (en) | 1999-10-14 | 2001-04-20 | Hitachi Ltd | Semiconductor device |
US6259627B1 (en) * | 2000-01-27 | 2001-07-10 | Multi Level Memory Technology | Read and write operations using constant row line voltage and variable column line load |
US6426893B1 (en) | 2000-02-17 | 2002-07-30 | Sandisk Corporation | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
JP2002074999A (en) | 2000-08-23 | 2002-03-15 | Sharp Corp | Non-volatile semiconductor memory |
US6538922B1 (en) | 2000-09-27 | 2003-03-25 | Sandisk Corporation | Writable tracking cells |
US6763424B2 (en) | 2001-01-19 | 2004-07-13 | Sandisk Corporation | Partial block data programming and reading operations in a non-volatile memory |
US6552929B1 (en) | 2001-02-08 | 2003-04-22 | Advanced Micro Devices, Inc. | Piggyback programming using an extended first pulse for multi-level cell flash memory designs |
US6577535B2 (en) | 2001-02-16 | 2003-06-10 | Sandisk Corporation | Method and system for distributed power generation in multi-chip memory systems |
US6785180B2 (en) | 2001-03-15 | 2004-08-31 | Micron Technology, Inc. | Programmable soft-start control for charge pump |
JP3829088B2 (en) | 2001-03-29 | 2006-10-04 | 株式会社東芝 | Semiconductor memory device |
US6678192B2 (en) | 2001-11-02 | 2004-01-13 | Sandisk Corporation | Error management for writable tracking storage units |
US6850441B2 (en) | 2002-01-18 | 2005-02-01 | Sandisk Corporation | Noise reduction technique for transistors and small devices utilizing an episodic agitation |
US6871257B2 (en) | 2002-02-22 | 2005-03-22 | Sandisk Corporation | Pipelined parallel programming operation in a non-volatile memory system |
US6721820B2 (en) | 2002-05-15 | 2004-04-13 | M-Systems Flash Disk Pioneers Ltd. | Method for improving performance of a flash-based storage system using specialized flash controllers |
US6751766B2 (en) | 2002-05-20 | 2004-06-15 | Sandisk Corporation | Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data |
JP4086583B2 (en) | 2002-08-08 | 2008-05-14 | シャープ株式会社 | Nonvolatile semiconductor memory device and data write control method |
JP2004086991A (en) | 2002-08-27 | 2004-03-18 | Renesas Technology Corp | Nonvolatile storage device |
US6963505B2 (en) | 2002-10-29 | 2005-11-08 | Aifun Semiconductors Ltd. | Method circuit and system for determining a reference voltage |
JP4129170B2 (en) | 2002-12-05 | 2008-08-06 | シャープ株式会社 | Semiconductor memory device and memory data correction method for memory cell |
WO2004086363A2 (en) | 2003-03-27 | 2004-10-07 | M-Systems Flash Disk Pioneers Ltd. | Data storage device with full access by all users |
JP2004310650A (en) | 2003-04-10 | 2004-11-04 | Renesas Technology Corp | Memory device |
US7240219B2 (en) | 2003-05-25 | 2007-07-03 | Sandisk Il Ltd. | Method and system for maintaining backup of portable storage devices |
US7237074B2 (en) | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
US7752380B2 (en) | 2003-07-31 | 2010-07-06 | Sandisk Il Ltd | SDRAM memory device with an embedded NAND flash controller |
US7212067B2 (en) * | 2003-08-01 | 2007-05-01 | Sandisk Corporation | Voltage regulator with bypass for multi-voltage storage system |
US6937513B1 (en) | 2003-10-16 | 2005-08-30 | Lsi Logic Corporation | Integrated NAND and nor-type flash memory device and method of using the same |
JP2005141811A (en) | 2003-11-05 | 2005-06-02 | Renesas Technology Corp | Nonvolatile memory |
US7085152B2 (en) | 2003-12-29 | 2006-08-01 | Intel Corporation | Memory system segmented power supply and control |
US7389465B2 (en) | 2004-01-30 | 2008-06-17 | Micron Technology, Inc. | Error detection and correction scheme for a memory device |
US7164561B2 (en) * | 2004-02-13 | 2007-01-16 | Sandisk Corporation | Voltage regulator using protected low voltage devices |
US7109750B2 (en) * | 2004-04-30 | 2006-09-19 | Xilinx, Inc. | Reconfiguration port for dynamic reconfiguration-controller |
US7218137B2 (en) * | 2004-04-30 | 2007-05-15 | Xilinx, Inc. | Reconfiguration port for dynamic reconfiguration |
US7233532B2 (en) * | 2004-04-30 | 2007-06-19 | Xilinx, Inc. | Reconfiguration port for dynamic reconfiguration-system monitor interface |
US7222224B2 (en) | 2004-05-21 | 2007-05-22 | Rambus Inc. | System and method for improving performance in computer memory systems supporting multiple memory access latencies |
US7535759B2 (en) | 2004-06-04 | 2009-05-19 | Micron Technology, Inc. | Memory system with user configurable density/performance option |
US7304883B2 (en) | 2004-06-09 | 2007-12-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit |
JP2006031795A (en) | 2004-07-14 | 2006-02-02 | Renesas Technology Corp | Nonvolatile semiconductor memory |
US7335026B2 (en) * | 2004-10-12 | 2008-02-26 | Telerobotics Corp. | Video surveillance system and method |
US7493457B2 (en) | 2004-11-08 | 2009-02-17 | Sandisk Il. Ltd | States encoding in multi-bit flash cells for optimizing error rate |
US7218570B2 (en) * | 2004-12-17 | 2007-05-15 | Sandisk 3D Llc | Apparatus and method for memory operations using address-dependent conditions |
US7391193B2 (en) * | 2005-01-25 | 2008-06-24 | Sandisk Corporation | Voltage regulator with bypass mode |
KR100704628B1 (en) | 2005-03-25 | 2007-04-09 | 삼성전자주식회사 | Method and apparatus for storing status information using plural strings |
JP4772363B2 (en) | 2005-04-12 | 2011-09-14 | 株式会社東芝 | Nonvolatile semiconductor memory device |
JPWO2006129339A1 (en) | 2005-05-30 | 2008-12-25 | スパンション エルエルシー | Storage device and storage device control method |
US7317630B2 (en) | 2005-07-15 | 2008-01-08 | Atmel Corporation | Nonvolatile semiconductor memory apparatus |
US8379721B2 (en) * | 2005-09-22 | 2013-02-19 | Qualcomm Incorported | Two pass rate control techniques for video coding using a min-max approach |
US7631245B2 (en) | 2005-09-26 | 2009-12-08 | Sandisk Il Ltd. | NAND flash memory controller exporting a NAND interface |
US7954037B2 (en) | 2005-10-25 | 2011-05-31 | Sandisk Il Ltd | Method for recovering from errors in flash memory |
KR101224919B1 (en) | 2006-02-07 | 2013-01-22 | 삼성전자주식회사 | Semiconductor memory device controlling output voltage level of high voltage generator according to temperature varation |
US7483327B2 (en) | 2006-03-02 | 2009-01-27 | Freescale Semiconductor, Inc. | Apparatus and method for adjusting an operating parameter of an integrated circuit |
-
2007
- 2007-03-30 US US11/694,712 patent/US7639531B2/en active Active
- 2007-05-11 WO PCT/US2007/068802 patent/WO2007134247A2/en active Application Filing
-
2009
- 2009-11-24 US US12/625,339 patent/US7852674B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5541886A (en) * | 1994-12-27 | 1996-07-30 | Intel Corporation | Method and apparatus for storing control information in multi-bit non-volatile memory arrays |
WO2001063615A1 (en) * | 2000-02-25 | 2001-08-30 | Advanced Micro Devices, Inc. | User selectable cell programming |
US20050007801A1 (en) * | 2001-09-17 | 2005-01-13 | Ron Barzilai | Multi-purpose non-volatile memory card |
US20050052934A1 (en) * | 2003-09-09 | 2005-03-10 | Tran Hieu Van | Unified multilevel cell memory |
US20050180209A1 (en) * | 2004-02-15 | 2005-08-18 | M-Systems Flash Disk Pioneers, Ltd. | Method of managing a multi-bit-cell flash memory |
Also Published As
Publication number | Publication date |
---|---|
WO2007134247A2 (en) | 2007-11-22 |
US7852674B2 (en) | 2010-12-14 |
US20100070799A1 (en) | 2010-03-18 |
US20070263439A1 (en) | 2007-11-15 |
US7639531B2 (en) | 2009-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2007134247A3 (en) | Dynamic cell bit resolution | |
WO2007134319A3 (en) | Multi-chip package for a flash memory | |
TW200629295A (en) | Memory bit line segment isolation | |
WO2004095461A3 (en) | Redundant memory structure using bad bit pointers | |
TWI265526B (en) | Semiconductor memory device and arrangement method thereof | |
WO2006064497A3 (en) | A method of handling limitations on the order of writing to a non-volatile memory | |
WO2006072945A3 (en) | Method of managing a multi-bit cell flash memory with improved reliability and performance | |
SG133534A1 (en) | System for improving endurance and data retention in memory devices | |
WO2006065523A3 (en) | Apparatus and method for memory operations using address-dependent conditions | |
TW200737182A (en) | High-bandwidth magnetoresistive random access memory devices and methods of operation thereof | |
WO2007116393A3 (en) | Method for generating soft bits in flash memories | |
JP2012504842A5 (en) | ||
TW200721016A (en) | Memory system and method of writing into nonvolatile semiconductor memory | |
WO2005114645A3 (en) | System and method for a universal data write unit | |
WO2005074613A3 (en) | Method for testing and programming memory devices and system for same | |
WO2006089313A3 (en) | Register read for volatile memory | |
JP2011528154A5 (en) | ||
TW200703361A (en) | Nonvolatile memory performing verify processing in sequential write | |
TW200703362A (en) | Memory modules and memory systems having the same | |
TW200708950A (en) | Memory management method and system | |
TW200634753A (en) | Optical storage system comprising interface for transferring data | |
TW200643724A (en) | System for improving bandwidth among a plurality of memory controllers and method thereof | |
TW200520536A (en) | Control device, system and method for reading multi-pixel | |
WO2008133980A3 (en) | System and method for multi-port read and write operations | |
WO2006120225A3 (en) | Dumping data in processing systems to a shared storage |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07783678 Country of ref document: EP Kind code of ref document: A2 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07783678 Country of ref document: EP Kind code of ref document: A2 |