WO2007117434A3 - Measuring a damaged structure formed on a wafer using optical metrology - Google Patents

Measuring a damaged structure formed on a wafer using optical metrology Download PDF

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Publication number
WO2007117434A3
WO2007117434A3 PCT/US2007/008264 US2007008264W WO2007117434A3 WO 2007117434 A3 WO2007117434 A3 WO 2007117434A3 US 2007008264 W US2007008264 W US 2007008264W WO 2007117434 A3 WO2007117434 A3 WO 2007117434A3
Authority
WO
WIPO (PCT)
Prior art keywords
damaged
diffraction signal
periodic structure
measuring
optical metrology
Prior art date
Application number
PCT/US2007/008264
Other languages
French (fr)
Other versions
WO2007117434A2 (en
Inventor
Kevin Lally
Merritt Funk
Radha Sundararajan
Original Assignee
Tokyo Electron Ltd
Kevin Lally
Merritt Funk
Radha Sundararajan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Kevin Lally, Merritt Funk, Radha Sundararajan filed Critical Tokyo Electron Ltd
Priority to KR1020087026661A priority Critical patent/KR101281264B1/en
Priority to JP2009503080A priority patent/JP5137942B2/en
Priority to CN2007800123940A priority patent/CN101416043B/en
Publication of WO2007117434A2 publication Critical patent/WO2007117434A2/en
Publication of WO2007117434A3 publication Critical patent/WO2007117434A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.
PCT/US2007/008264 2006-03-30 2007-03-29 Measuring a damaged structure formed on a wafer using optical metrology WO2007117434A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020087026661A KR101281264B1 (en) 2006-03-30 2007-03-29 Method and system of measuring a damaged structure formed on a wafer using optical metrology, method of generating the diffracted reflectivity, and computer readable storage medium
JP2009503080A JP5137942B2 (en) 2006-03-30 2007-03-29 Measurement of damaged structure formed on wafer using optical measurement
CN2007800123940A CN101416043B (en) 2006-03-30 2007-03-29 Measuring a damaged structure formed on a wafer using optical metrology

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/396,214 2006-03-30
US11/396,214 US7324193B2 (en) 2006-03-30 2006-03-30 Measuring a damaged structure formed on a wafer using optical metrology

Publications (2)

Publication Number Publication Date
WO2007117434A2 WO2007117434A2 (en) 2007-10-18
WO2007117434A3 true WO2007117434A3 (en) 2008-04-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/008264 WO2007117434A2 (en) 2006-03-30 2007-03-29 Measuring a damaged structure formed on a wafer using optical metrology

Country Status (6)

Country Link
US (2) US7324193B2 (en)
JP (1) JP5137942B2 (en)
KR (1) KR101281264B1 (en)
CN (1) CN101416043B (en)
TW (1) TWI342595B (en)
WO (1) WO2007117434A2 (en)

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Also Published As

Publication number Publication date
JP2009532869A (en) 2009-09-10
US20070229807A1 (en) 2007-10-04
CN101416043A (en) 2009-04-22
TWI342595B (en) 2011-05-21
US7324193B2 (en) 2008-01-29
US20080137078A1 (en) 2008-06-12
JP5137942B2 (en) 2013-02-06
TW200737389A (en) 2007-10-01
WO2007117434A2 (en) 2007-10-18
CN101416043B (en) 2011-01-26
KR20090005122A (en) 2009-01-12
KR101281264B1 (en) 2013-07-03

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