WO2007101138A3 - High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles - Google Patents
High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles Download PDFInfo
- Publication number
- WO2007101138A3 WO2007101138A3 PCT/US2007/062766 US2007062766W WO2007101138A3 WO 2007101138 A3 WO2007101138 A3 WO 2007101138A3 US 2007062766 W US2007062766 W US 2007062766W WO 2007101138 A3 WO2007101138 A3 WO 2007101138A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- particles
- planar
- inter
- metallic
- nanoflakes
- Prior art date
Links
- 239000002245 particle Substances 0.000 title abstract 6
- 239000002060 nanoflake Substances 0.000 title abstract 4
- 239000002243 precursor Substances 0.000 title abstract 3
- 229910000765 intermetallic Inorganic materials 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910000905 alloy phase Inorganic materials 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000001995 intermetallic alloy Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002105 nanoparticle Substances 0.000 abstract 1
- 230000001131 transforming effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1241—Metallic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
- C23C18/127—Preformed particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, , form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. . In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07757448A EP1997150A2 (en) | 2006-02-23 | 2007-02-23 | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
CN200780014617.7A CN101443919B (en) | 2006-02-23 | 2007-02-23 | Method for forming absorber layer, precursor material for forming absorber layer and solar cell |
JP2008556573A JP2009528682A (en) | 2006-02-23 | 2007-02-23 | High throughput semiconductor precursor layer printing with intermetallic nanoflakes particles |
Applications Claiming Priority (18)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/361,103 | 2006-02-23 | ||
US11/361,522 US20070166453A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of chalcogen layer |
US11/361,433 | 2006-02-23 | ||
US11/361,521 US20070163383A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of nanostructured semiconductor precursor layer |
US11/361,433 US7700464B2 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of semiconductor precursor layer from nanoflake particles |
US11/361,497 US20070163638A1 (en) | 2004-02-19 | 2006-02-23 | Photovoltaic devices printed from nanostructured particles |
US11/361,515 | 2006-02-23 | ||
US11/361,522 | 2006-02-23 | ||
US11/361,521 | 2006-02-23 | ||
US11/361,103 US20070169809A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides |
US11/361,497 | 2006-02-23 | ||
US11/361,515 US20070163640A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides |
US11/395,438 | 2006-03-30 | ||
US11/394,849 | 2006-03-30 | ||
US11/395,668 | 2006-03-30 | ||
US11/395,668 US8309163B2 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
US11/394,849 US20070163641A1 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
US11/395,438 US20070163643A1 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of chalcogen layer and the use of an inter-metallic material |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2007101138A2 WO2007101138A2 (en) | 2007-09-07 |
WO2007101138A3 true WO2007101138A3 (en) | 2008-10-23 |
WO2007101138A9 WO2007101138A9 (en) | 2008-12-31 |
Family
ID=38459767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/062766 WO2007101138A2 (en) | 2006-02-23 | 2007-02-23 | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1997150A2 (en) |
JP (2) | JP2009528682A (en) |
CN (2) | CN103824896A (en) |
WO (1) | WO2007101138A2 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8354294B2 (en) * | 2006-01-24 | 2013-01-15 | De Rochemont L Pierre | Liquid chemical deposition apparatus and process and products therefrom |
WO2010062708A2 (en) * | 2008-10-30 | 2010-06-03 | Hak Fei Poon | Hybrid transparent conductive electrodes |
JP5137794B2 (en) * | 2008-11-26 | 2013-02-06 | 京セラ株式会社 | Thin film solar cell manufacturing method |
JP2010129648A (en) * | 2008-11-26 | 2010-06-10 | Kyocera Corp | Method of manufacturing thin-film solar cell |
JP5317648B2 (en) * | 2008-11-26 | 2013-10-16 | 京セラ株式会社 | Thin film solar cell manufacturing method |
JP5383162B2 (en) * | 2008-11-26 | 2014-01-08 | 京セラ株式会社 | Thin film solar cell manufacturing method |
BRPI1006965A2 (en) * | 2009-01-21 | 2016-04-12 | Purdue Research Foundation | selenization of precursor layer containing cuins2 nanoparticles |
JP2010225985A (en) * | 2009-03-25 | 2010-10-07 | Fujifilm Corp | Photoelectric conversion semiconductor layer and method of manufacturing the same, photoelectric conversion device, and solar cell |
JP2013501381A (en) * | 2009-08-04 | 2013-01-10 | プリカーサー エナジェティクス, インコーポレイテッド | Method for photovoltaic absorbers with controlled stoichiometry |
KR101610382B1 (en) * | 2009-10-30 | 2016-04-08 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
FR2964044B1 (en) * | 2010-08-26 | 2012-09-14 | Commissariat Energie Atomique | LIQUID METAL EMULSION |
TW201230379A (en) * | 2010-09-15 | 2012-07-16 | Precursor Energetics Inc | Deposition processes and devices for photovoltaics |
TWI538235B (en) * | 2011-04-19 | 2016-06-11 | 弗里松股份有限公司 | Thin-film photovoltaic device and fabrication method |
WO2014014057A1 (en) | 2012-07-20 | 2014-01-23 | 旭化成株式会社 | Semiconductor film and semiconductor element |
KR101723062B1 (en) * | 2014-11-18 | 2017-04-04 | 주식회사 엘지화학 | Metal Calcogenide Nano Particle for Manufacturing Light Absorbing Layer of Solar Cell and Method for Manufacturing the Same |
CN109830549B (en) * | 2018-12-13 | 2021-01-05 | 广东工业大学 | Indium sulfide/graphene composite film and preparation method and application thereof |
CN113324970B (en) * | 2021-04-25 | 2023-04-21 | 中国科学技术大学 | Structure-adjustable high-hot-spot three-dimensional mesh screen nano Raman substrate and preparation and application thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5728231A (en) * | 1995-05-15 | 1998-03-17 | Matsushita Electric Industrial Co., Ltd. | Precursor for semiconductor thin films and method for producing semiconductor thin films |
US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
JP2001044464A (en) * | 1999-07-28 | 2001-02-16 | Asahi Chem Ind Co Ltd | METHOD OF FORMING Ib-IIIb-VIb2 COMPOUND SEMICONDUCTOR LAYER AND MANUFACTURE OF THIN-FILM SOLAR CELL |
US20030041893A1 (en) * | 2001-08-31 | 2003-03-06 | Matsushita Electric Industrial Co. Ltd. | Solar cell, method for manufacturing the same, and apparatus for manufacturing the same |
US20040219730A1 (en) * | 2001-04-16 | 2004-11-04 | Basol Bulent M. | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4341124B2 (en) * | 1999-11-25 | 2009-10-07 | ソニー株式会社 | Manufacturing method of semiconductor device |
JP2004087535A (en) * | 2002-08-22 | 2004-03-18 | Sony Corp | Method for manufacturing crystalline semiconductor material and method for manufacturing semiconductor device |
CN100411195C (en) * | 2003-04-11 | 2008-08-13 | 索尼株式会社 | Photoelectric conversion device, electronic apparatus and electronic apparatus manufacturing method, metal film formation method and layer structure |
CN1295765C (en) * | 2004-03-04 | 2007-01-17 | 上海交通大学 | Photovoltaic semiconductor thin film plating liquid and its preparation method |
-
2007
- 2007-02-23 JP JP2008556573A patent/JP2009528682A/en active Pending
- 2007-02-23 EP EP07757448A patent/EP1997150A2/en not_active Withdrawn
- 2007-02-23 WO PCT/US2007/062766 patent/WO2007101138A2/en active Application Filing
- 2007-02-23 CN CN201410025475.6A patent/CN103824896A/en active Pending
- 2007-02-23 CN CN200780014617.7A patent/CN101443919B/en not_active Expired - Fee Related
-
2012
- 2012-10-03 JP JP2012220990A patent/JP2013033987A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5728231A (en) * | 1995-05-15 | 1998-03-17 | Matsushita Electric Industrial Co., Ltd. | Precursor for semiconductor thin films and method for producing semiconductor thin films |
US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
JP2001044464A (en) * | 1999-07-28 | 2001-02-16 | Asahi Chem Ind Co Ltd | METHOD OF FORMING Ib-IIIb-VIb2 COMPOUND SEMICONDUCTOR LAYER AND MANUFACTURE OF THIN-FILM SOLAR CELL |
US20040219730A1 (en) * | 2001-04-16 | 2004-11-04 | Basol Bulent M. | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
US20030041893A1 (en) * | 2001-08-31 | 2003-03-06 | Matsushita Electric Industrial Co. Ltd. | Solar cell, method for manufacturing the same, and apparatus for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2009528682A (en) | 2009-08-06 |
JP2013033987A (en) | 2013-02-14 |
WO2007101138A2 (en) | 2007-09-07 |
CN103824896A (en) | 2014-05-28 |
CN101443919B (en) | 2014-03-05 |
WO2007101138A9 (en) | 2008-12-31 |
CN101443919A (en) | 2009-05-27 |
EP1997150A2 (en) | 2008-12-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2007101138A3 (en) | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles | |
WO2007101135A3 (en) | High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles | |
Yang et al. | Scalable assembly of crystalline binary nanocrystal superparticles and their enhanced magnetic and electrochemical properties | |
Tetik et al. | 3D printed MXene aerogels with truly 3D macrostructure and highly engineered microstructure for enhanced electrical and electrochemical performance | |
Luechinger et al. | Graphene-stabilized copper nanoparticles as an air-stable substitute for silver and gold in low-cost ink-jet printable electronics | |
WO2008054337A3 (en) | Method for producing compositions for nanoparticles on solid surfaces | |
Cao et al. | Self-assembled triangular and labyrinth buckling patterns of thin films on spherical substrates | |
Medpelli et al. | Geopolymer with hierarchically meso‐/macroporous structures from reactive emulsion templating | |
TWI517774B (en) | Method of producing multilayer graphene-laminated substrate | |
Mou et al. | Facile preparation of stable reactive silver ink for highly conductive and flexible electrodes | |
Kang et al. | Density functional study of the Au-intercalated graphene/Ni (111) surface | |
Michel et al. | Engineering chemically exfoliated dispersions of two-dimensional graphite and molybdenum disulphide for ink-jet printing | |
KR20150036551A (en) | Vertically aligned arrays of carbon nanotubes formed on multilayer substrates | |
Mo et al. | Flexible transparent conductive films combining flexographic printed silver grids with CNT coating | |
WO2006078825A3 (en) | Processes for forming nanoparticles | |
US9499410B2 (en) | Methods and compositions for making metal oxide-graphene composites | |
WO2009014320A3 (en) | Spherical assembly particle composition of cuprous oxide and preparation method thereof | |
MY185109A (en) | Composition and process for making a porous inorganic oxide coating | |
WO2007101099A3 (en) | High-throughput printing of chalcogen layer and the use of an inter-metallic material | |
CN102066245A (en) | Process for the preparation of graphene | |
WO2009126204A3 (en) | High aspect ratio openings | |
WO2010011841A3 (en) | Metal nanoparticle ink compositions | |
WO2008060592A3 (en) | Micropatterning of conductive graphite particles using microcontact printing | |
EP2060328A3 (en) | Methods of forming composite powder coatings and articles thereof | |
EP2495768A3 (en) | Processes for forming photovoltaic conductive features from multiple inks |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 2008556573 Country of ref document: JP Ref document number: 7199/DELNP/2008 Country of ref document: IN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007757448 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200780014617.7 Country of ref document: CN |