WO2007047215A2

WO2007047215A2 - Contact assembly cleaning in an electro-chemical mechanical processing apparatus

Info

Publication number: WO2007047215A2
Application number: PCT/US2006/039439
Authority: WO
Inventors: Antoine P. Manens; Alain Duboust; Paul D. Butterfield; Ricardo Martinez; Yan Wang; Jose Salas-Vernis
Original assignee: Applied Materials, Inc.
Priority date: 2005-10-14
Filing date: 2006-10-10
Publication date: 2007-04-26
Also published as: WO2007047215A3; TWI369421B; US20070084729A1; TW200716796A

Abstract

Embodiments of the invention generally provide a method and apparatus for cleaning an electrical contact in an electrochemical mechanical planarizing apparatus. In one embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of draining electrolyte from the contact assembly and flowing a rinsing fluid into the contact assembly. In another embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of preventing fluid from passing between an interface of the contact assembly and a pad disposed outward thereof, flowing a rinsing fluid into the contact assembly and draining fluid flowing out of the contact assembly.

Description

CONTACT ASSEMBLY CLEANING IN AN ELECTROCHEMICAL MECHANICAL PROCESSING

APPARATUS

BACKGROUND OF THE INVENTION

FIELD OF THE INVENTION

[oooi] Embodiments of the present invention generally relate to a method and apparatus cleaning a contact assembly in an electrochemical mechanical processing apparatus.

DESCRIPTION OF THE RELATED ART

[0002] Electrochemical mechanical planarizing (ECMP) is a technique used to remove conductive materials from a substrate surface by electrochemical dissolution while concurrently polishing the substrate with reduced mechanical abrasion compared to conventional planarization processes. ECMP systems may generally be adapted for deposition of conductive material on the substrate by reversing the polarity of the bias. Electrochemical dissolution is performed by applying a bias between a cathode and a substrate surface to remove conductive material from the substrate surface into a surrounding electrolyte. Typically, the bias is applied to the substrate surface by a conductive surface that is part of or passing through a polishing material on which the substrate is processed. A mechanical component of the polishing process is performed by providing relative motion between the substrate and the polishing material that enhances the removal of the conductive material from the substrate. [0003] During ECMP processing, the conductive material is electrical biased by one or more contact elements. The contact elements are subject to corrosion and/or attack by processing chemistries, thereby resulting in diminished electrical conduction to substrates over a period of processing cycles. As the efficiency of the electrical contact is diminished, processing of a substrate is impaired. For example, poor electrical contact between the contact elements and the substrate may result in defects, such as pitting or scratching of the conductive material being removed from the substrate. Moreover, sludge and/or other deposits may accumulate around the electrical contact, further obstructing the maintenance of good electrical biasing of the substrate through i the contact element. Good electrical connections for biasing the substrate must be preserved in order to maintain robust process performance. [0004] Thus, there is a need for an improved method and apparatus for maintaining good electrical contact in an electrochemical processing apparatus.

SUMMARY OF THE INVENTION

[0005] Embodiments of the invention generally provide a method and apparatus for cleaning an electrical contact in an electrochemical mechanical planarizing apparatus. In one embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of draining electrolyte from the contact assembly and flowing a rinsing fluid into the contact assembly. In another embodiment, a method for cleaning a contact assembly in an electroprocessing apparatus includes the steps of preventing fluid from passing between an interface of the contact assembly and a pad disposed outward thereof, flowing a rinsing fluid into the contact assembly and draining fluid flowing out of the contact assembly.

BRIEF DESCRIPTION OF THE DRAWINGS

[0006] So that the manner in which the above recited embodiments of the invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

[0007] Figure 1 is a plan view of an electrochemical mechanical processing system;

[0008] Figure 2 is a sectional view of one embodiment of a bulk electrochemical mechanical processing (ECMP) station of the system of Figure

1 ;

[0009] Figure 3 is a partial sectional view of one embodiment of a platen assembly of the bulk ECMP station of Figure 2; [0010] Figure 4A is a partial sectional view of the bulk ECMP station through two contact assemblies;

[0011] Figures 4B-C are sectional views of plugs;

[0012] Figures 5A-C are side, exploded and sectional views of one embodiment of a contact assembly;

[0013] Figure 5D is a sectional view of alternative embodiment of the housing of Figures 5A-C;

[0014] Figure 6 is one embodiment of a contact element;

[0015] Figure 7 is a perspective view of another embodiment of a bulk

ECMP station;

[0016] Figures 8-9 are perspective and partial sectional views of a contact assembly;

[0017] Figure 10 is a flow diagram of one embodiment of a method for cleaning a contact assembly;

[0018] Figure 11 is a partial sectional view of another embodiment of a contact assembly disposed on a platen;

[0019] Figure 12 is a flow diagram of another embodiment of a method for cleaning a contact assembly;

[0020] Figure 13 is a schematic side view of another embodiment of a

ECMP station;

[0021] Figure 14 is a schematic top view of another embodiment of an

ECMP station; and

[0022] Figure 15 is a sectional view of one embodiment of a residual ECMP station.

[0023] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that embodiments present in one embodiment may be beneficially incorporated in other embodiments with out further recitation.

DETAILED DESCRIPTION

[0024] Embodiments for a system and method for removal of conductive material from a substrate are provided. Although the embodiments disclosed below focus primarily on removing material from, e.g., planarizing, a substrate, it is contemplated that the teachings disclosed herein may be used to deposit material on a substrate by reversing the polarity of an electrical bias applied between the substrate and an electrode of the system.

[0025] Figure 1 is a plan view of one embodiment of a planarization system 100 having an apparatus for electrochemically processing a substrate. The exemplary system 100 generally comprises a factory interface 102, a loading robot 104, and a planarizing module 106. The loading robot 104 is disposed proximate the factory interface 102 and the planarizing module 106 to facilitate the transfer of substrates 122 therebetween.

[0026] A controller 108 is provided to facilitate control and integration of the modules of the system 100. The controller 108 comprises a central processing unit (CPU) 110, a memory 112, and support circuits 114. The controller 108 is coupled to the various components of the system 100 to facilitate control of, for example, the planarizing, cleaning, and transfer processes. [0027] The factory interface 102 generally includes a cleaning module 116 and one or more wafer cassettes 118. An interface robot 120 is employed to transfer substrates 122 between the wafer cassettes 118, the cleaning module 116 and an input module 124. The input module 124 is positioned to facilitate transfer of substrates 122 between the planarizing module 106 and the factory interface 102 by grippers, for example, vacuum grippers or mechanical clamps. [0028] The planarizing module 106 includes at least a first electrochemical mechanical planarizing (ECMP) station 128, and optionally, at least one conventional chemical mechanical planarizing (CMP) station 132 disposed in an environmentally controlled enclosure 188. Examples of planarizing modules 106 that can be adapted to benefit from the invention include MIRRA^®, MIRRA MESA™, REFLEXION^® , REFLEXION^® LK, and REFLEXION LK Ecmp™ Chemical Mechanical Planarizing Systems, all available from Applied Materials, Inc. of Santa Clara, California. Other planarizing modules, including those that use processing pads, planarizing webs, or a combination thereof, and those that move a substrate relative to a planarizing surface in a rotational, linear or other planar motion may also be adapted to benefit from the invention. [0029] In the embodiment depicted in Figure 1 , the planarizing module 106 includes the first ECMP station 128, a second ECMP station 130 and one CMP station 132. Bulk removal of conductive material from the substrate is performed through an electrochemical dissolution process at the first ECMP station 128. After the bulk material removal at the first ECMP station 128, residual conductive material is removed from the substrate at the second ECMP station 130 through a second electrochemical mechanical process. It is contemplated that more than one residual ECMP station 130 may be utilized in the planarizing module 106.

[0030] A conventional chemical mechanical planarizing process is performed at the planarizing station 132 after processing at the second ECMP station 130. An example of a conventional CMP process for the removal of copper is described in United States Patent No. 6,451 ,697, issued September 17, 2002. An example of a conventional CMP process for the barrier removal is described in United States Patent Application No. 10/187,857, filed June 27, 2002. It is contemplated that other CMP processes may be alternatively performed. As the CMP stations 132 are conventional in nature, further description thereof has been omitted for the sake of brevity.

[0031] The exemplary planarizing module 106 also includes a transfer station 136 and a carousel 134 that are disposed on an upper or first side 138 of a machine base 140. In one embodiment, the transfer station 136 includes an input buffer station 142, an output buffer station 144, a transfer robot 146, and a load cup assembly 148. The input buffer station 142 receives substrates from the factory interface 102 by the loading robot 104. The loading robot 104 is also utilized to return polished substrates from the output buffer station 144 to the factory interface 102. The transfer robot 146 is utilized to move substrates between the buffer stations 142, 144 and the load cup assembly 148. [0032] In one embodiment, the transfer robot 146 includes two gripper assemblies, each having pneumatic gripper fingers that hold the substrate by the substrate's edge. The transfer robot 146 may simultaneously transfer a substrate to be processed from the input buffer station 142 to the load cup assembly 148 while transferring a processed substrate from the load cup assembly 148 to the output buffer station 144. An example of a transfer station that may be used to advantage is described in United States Patent Application No. 6,156,124, issued December 5, 2000 to Tobin. [0033] The carousel 134 is centrally disposed on the base 140. The carousel 134 typically includes a plurality of arms 150, each supporting a planarizing head assembly 152. Two of the arms 150 depicted in Figure 1 are shown in phantom such that a planarizing surface 126 of the first ECMP station 128 and the transfer station 136 may be seen. The carousel 134 is indexable such that the planarizing head assemblies 152 may be moved between the planarizing stations 128, 132 and the transfer station 136. One carousel that may be utilized to advantage is described in United States Patent No. 5,804,507, issued September 8, 1998 to Perlov, et al.

[0034] A conditioning device 182 is disposed on the base 140 adjacent each of the planarizing stations 128, 132. The conditioning device 182 periodically conditions the planarizing material disposed in the stations 128, 132 to maintain uniform planarizing results.

[0035] Figure 2 depicts a sectional view of one of the planarizing head assemblies 152 positioned over one embodiment of the first ECMP station 128. The planarizing head assembly 152 generally comprises a drive system 202 coupled to a planarizing head 204. The drive system 202 generally provides at least rotational motion to the planarizing head 204. The planarizing head 204 additionally may be actuated toward the first ECMP station 128 such that the substrate 122 retained in the planarizing head 204 may be disposed against the planarizing surface 126 of the first ECMP station 128 during processing. The drive system 202 is coupled to the controller 108 that provides a signal to the drive system 202 for controlling the rotational speed and direction of the planarizing head 204.

[0036] In one embodiment, the planarizing head may be a TITAN HEAD™ or TITAN PROFILER™ wafer carrier manufactured by Applied Materials, Inc. Generally, the planarizing head 204 comprises a housing 214 and retaining ring 224 that defines a center recess in which the substrate 122 is retained. The retaining ring 224 circumscribes the substrate 122 disposed within the planarizing head 204 to prevent the substrate from slipping out from under the planarizing head 204 while processing. The retaining ring 224 can be made of plastic materials such as PPS, PEEK, and the like, or conductive materials such as stainless steel, Cu, Au, Pd, and the like, or some combination thereof. It is further contemplated that a conductive retaining ring 224 may be electrically biased to control the electric field during ECMP. It is contemplated that other planarizing heads may be utilized.

[0037] The first ECMP station 128 generally includes a platen assembly 230 that is rotationally disposed on the base 140. The platen assembly 230 is supported above the base 140 by a bearing 238 so that the platen assembly 230 may be rotated relative to the base 140. An area of the base 140 circumscribed by the bearing 238 is open and provides a conduit for the electrical, mechanical, pneumatic, control signals and connections communicating with the platen assembly 230.

[0038] Conventional bearings, rotary unions and slip rings, collectively referred to as rotary coupler 276, are provided such that electrical, mechanical, fluid, pneumatic, control signals and connections may be coupled between the base 140 and the rotating platen assembly 230. The platen assembly 230 is typically coupled to a motor 232 that provides the rotational motion to the platen assembly 230. The motor 232 is coupled to the controller 108 that provides a signal for controlling the rotational speed and direction of the platen assembly 230.

[0039] The platen assembly 230 has an upper plate 236 and a lower plate 234. The upper plate 236 may be fabricated from a rigid material, such as a metal or rigid plastic, and in one embodiment, is fabricated from or coated with a dielectric material, such as CPVC. The upper plate 236 may have a circular, rectangular or other plane form. A top surface 260 of the upper plate 236 supports a processing pad assembly 222 thereon. The processing pad assembly may be retained to the upper plate 236 by magnetic attraction, vacuum, clamps, adhesives and the like.

[0040] The lower plate 234 is generally fabricated from a rigid material, such as aluminum. In the embodiment depicted in Figure 2, the upper and lower plates 236, 234 are coupled by a plurality of fasteners 228. Generally, a plurality of locating pins 220 (one is shown in Figure 2) are disposed between the upper and lower plates 236, 234 to ensure alignment therebetween. The upper plate 236 and the lower plate 234 may optionally be fabricated from a single, unitary member. [0041] A plenum 206 is defined in the platen assembly 230. The plenum 206 may be partially formed in at least one of the upper or lower plates 236, 234. In the embodiment depicted in Figure 2, the plenum 206 is defined in a recess 208 partially formed in the lower surface 262 of the upper plate 236. A plurality of holes 210 are formed in the upper plate 236 to allow electrolyte, provided to the plenum 206 from an electrolyte source 248, to flow uniformly though the platen assembly 230 and into contact with the substrate 122 during processing. The plenum 206 is partially bounded by a cover 212 coupled to the upper plate 236 enclosing the recess 208.

[0042] Figure 3 is a partial sectional view of the platen assembly 230 showing one embodiment of the cover 212 in greater detail. The cover 212 is sealingly coupled to the upper plate 236 by a plurality of fasteners 312. A plenum seal 314 is disposed between the cover 212 and upper plate 236. [0043] The cover 212 includes a first aperture 302, a second aperture 304 and a third aperture 306. The first and second apertures 302, 304 provide an inlet and outlet that couple the plenum 206 through the cover 212 to the electrolyte source 248. In one embodiment, the first and second apertures 302, 304 engage male fittings 308 that mate with holes 340 formed in the lower plate 234. A radial seal 310, for example, an o-ring or lobed seal, is disposed between the fittings 308 and bore of the holes 340 to provide a fluid seal that prevents electrolyte from leaking out of the plenum 206 through the cover 212. [0044] The third aperture 306 is circumscribed by a seal 316 that isolates the third aperture 306 from electrolyte disposed within the plenum 206. In one embodiment, the seal 316 is positioned outward of second plenum seal 344 to provide an additional barrier between the first bayonet fitting 318 and the electrolyte disposed in the plenum 206.

[0045] A first bayonet fitting 318 is disposed through the third aperture 306 and couples a contact plate 320, disposed in the plenum 206 and coupled to the upper plate 236, to a socket 322 disposed in the lower plate 234. The socket 322 is coupled by a first power line 324 disposed in a passage 326 formed in the lower plate 234 to the power source 242 through the rotary coupler 276 (as shown in Figure 2). [0046] A second line 328 is disposed through the lower plate 234 coupling a socket 334 disposed proximate the perimeter of the lower plate 234 to the power source 242. A second bayonet fitting 332 is coupled to a contact member 336 disposed in the upper plate 236. The contact member 336 includes a threaded hole 338 or other element exposed to the top surface 260 of the upper plate 236 that is suitable for electrically coupling the contact member 336 to the processing pad assembly 222. In the embodiment depicted in Figure 3, the processing pad assembly 222 is coupled by the second bayonet fitting 332 to the power source 242.

[0047] The bayonet fittings 318, 332 and locating pins 220 facilitate alignment of the plates 234, 236 while fluid and electrical connection are made as the upper plate 236 is disposed on the lower plate 234. This advantageously provides both ease of assembly with robust electrical and fluid coupling between the plates 234, 236.

[0048] Referring additionally to Figure 2, the processing pad assembly 222 includes an electrode 292 and at least a planarizing portion 290. At least one contact assembly 250 extends above the processing pad assembly 222 and is adapted to electrically couple the substrate being processing on the processing pad assembly 222 to the power source 242.

[0049] The electrode 292 is also coupled to the power source 242 so that an electrical potential may be established between the substrate and electrode 292. In one embodiment the electrode 292 is electrically coupled to the power source 242 by a fastener 380 disposed through the electrode 292 and engaging the threaded hole 338 of the contact member 336 (as shown in Figure 3). [0050] The electrode 292 is typically comprised of a conductive material, such as stainless steel, copper, aluminum, gold, silver and tungsten, among others. The electrode 292 may be solid, impermeable to electrolyte, permeable to electrolyte or perforated. In the embodiment depicted in Figure 3, the electrode 292 is configured to allow electrolyte therethrough. The electrode 292 may be permeable, have holes formed therethrough or a combination thereof. The electrode 292 is disposed on the top surface 260 of the platen assembly 230 and is coupled to the power source 242 through the platen assembly 230. [0051] Embodiments of the processing pad assembly 222 suitable for bulk removal of material from the substrate 122 may generally include a planarizing surface that is substantially dielectric. As the conductive material to be removed from the substrate 122 substantially covers the substrate 122, fewer contacts for biasing the substrate 122 are required. Embodiments of the processing pad assembly 222 suitable for residual removal of material from the substrate 122 may generally include a planarizing surface that is substantially conductive. As the conductive material to be removed from the substrate 122 comprises isolated islands of material disposed on the substrate 122, more contacts for biasing the substrate 122 are required.

[0052] In one embodiment, the planarizing layer 290 of the processing pad assembly 222 may include a planarizing surface 364 that is dielectric, such as a polyurethane pad. Apertures 390 are formed through the planarizing surface 364 to expose the electrode 292 such that electrolyte may create a conductive path (or cell) between the substrate and electrode. Examples of processing pad assemblies that may be adapted to benefit from the invention are described in United States Patent Application Serial No. 10/455,941 , filed June 6, 2003 by Y. Hu et al. (entitled "CONDUCTIVE PLANARIZING ARTICLE FOR ELECTROCHEMICAL MECHANICAL PLANARIZING") and United States Patent Application Serial No. 10/455,895, filed June 6, 2003 by Y. Hu et al. (entitled "CONDUCTIVE PLANARIZING ARTICLE FOR ELECTROCHEMICAL MECHANICAL PLANARIZING").

[0053] Figure 4A is a partial sectional view of the first ECMP station 128 through two contact assemblies 250, and Figures 5A-C are side, exploded and sectional views of one of the contact assemblies 250 shown in Figure 4A. The platen assembly 230 includes at least one contact assembly 250 projecting therefrom and coupled to the power source 242 that is adapted to bias a surface of the substrate 122 during processing. The contact assemblies 250 may be coupled to the platen assembly 230, part of the processing pad assembly 222, or a separate element. Although two contact assemblies 250 are shown in Figure 4A, any number of contact assemblies may be utilized and may be distributed in any number of configurations relative to the centerline of the upper plate 236. [0054] The contact assemblies 250 are generally electrically coupled to the contact plate 320 through the upper plate 236 and extend at least partially through respective apertures 468 formed in the processing pad assembly 222. The position of the contact assemblies 250 may be chosen to have a predetermined configuration across the platen assembly 230. For predefined processes, individual contact assemblies 250 may be repositioned in different apertures 468, while apertures not containing contact assemblies may be plugged with a stopper 492 or filled with a nozzle 494 that allows flow of electrolyte from the plenum 206 to the substrate as shown in Figures 4B-C. One contact assembly that may be adapted to benefit from the invention is described in United States Patent Application Serial No. 10/445,239, filed May 23, 2003, by Butterfield, et al.

[0055] Although the embodiments of the contact assembly 250 described below with respect to Figure 4A depicts a rolling ball contact, the contact assembly 250 may alternatively comprise a structure or assembly having a conductive upper layer or surface suitable for electrically biasing the substrate 122. For example, the contact assembly 250 may include a structure having an upper layer made from a conductive material or a conductive composite (i.e., the conductive elements are dispersed integrally with or comprise the material comprising the upper surface), such as a polymer matrix having conductive particles dispersed therein or a conductive coated fabric, among others. Other examples of suitable contact assemblies are described in United States Provisional Patent Application Serial No. 60/516,680, filed November 3, 2003, by Hu, et al.

[0056] In one embodiment, each of the contact assemblies 250 includes a hollow housing 402, an adapter 404, a ball 406, a contact element 414 and a clamp bushing 416. The ball 406 has a conductive outer surface and is movably disposed in the housing 402. The ball 406 may be disposed in a first position having at least a portion of the ball 406 extending above the planarizing surface 364 and at least a second position where the ball 406 is flush with the planarizing surface 364. The ball 406 is generally suitable for electrically coupling the substrate 122 to the power source 242 through the contact plate 320. [0057] The power source 242 generally provides a positive electrical bias to the ball 406 during processing. Between planarizing substrates, the power source 242 may optionally apply a negative bias to the ball 406 to minimize attack on the ball 406 by process chemistries.

[0058] The housing 402 is configured to provide a flow of electrolyte from the source 248 to the substrate during processing. The housing 402 is fabricated from a dielectric material compatible with process chemistries. In one embodiment, the housing 402 is made of PEEK. The housing 402 has a first end 408 and a second end 410. A drive feature 412 is formed in and/or on the first end 408 to facilitate installation of the contact assembly 250 to the contact plate 320. The drive feature 412 may be holes for a spanner wrench, a slot or slots, a recessed drive feature (such as for a TORX^® or hex drive, and the like) or a projecting drive feature (such as wrench flats or a hex head, and the like), among others. The first end 408 additionally includes a seat 426 that prevents the ball 406 from passing out of the first end 408 of the housing 402. The seat 426 optionally may include one or more grooves 448 formed therein that allow fluid flow to exit the housing 402 between the ball 406 and seat 426. Maintaining fluid past the ball 406 may minimize the propensity of process chemistries to attack the ball 406.

[0059] In one embodiment, a plurality of grooves 448 is formed around the seat 426 in a spaced apart relation. The spaced apart relation of the grooves 448 provides a more uniform electrolyte lead flow distribution around the ball 406, thereby enhancing corrosion protection of the ball. Moreover, the bleed flow allows the force applied to the balls to be the same with or without the substrate presence, compared to conventional housings without bleed flows where the ball force is dramatically different in the up and down position. In the embodiment depicted in Figure 5B, six grooves 448 are shown spaced equidistant around the seat 428.

[0060] Alternatively as shown in Figure 5D, the grooves 448 may be replaced or augmented by one or more spacers 454 extending from the seat 426 (or housing 402). The spacers 454 prevent the ball 406 from contacting the seat 426 in a manner that prevents fluid from bleeding past the ball 406 when the ball 406 is urged against (or toward) the seat 426. [0061] In another embodiment, one or more relief holes 446 may be formed through the housing 402 to allow fluid to exit the housing 402 while the ball 406 is disposed against the seat 426. The relief holes 446 prevent fluid from residing in the housing 402 for extended periods, thereby minimizing accumulation of sludge or other contaminants that may stick to the ball 406 and degrade electrical conductance, obstruct flow through the housing 406 while processing, cause ball stiction or otherwise degrade processing performance. [0062] The contact element 414 is coupled between the clamp bushing 416 and adapter 404. The contact element 414 is generally configured to electrically connect the adapter 404 and ball 406 substantially or completely through the range of ball positions within the housing 402. In one embodiment, the contact element 414 may be configured as a spring form. [0063] In the embodiment depicted in Figures 4 and 5A-C and detailed in Figure 6, the contact element 414 includes an annular base 442 having a plurality of flexures 444 extending therefrom in a polar array. The flexure 444 includes two support elements 602 extending from the base 442 to a distal end 608. The support elements 602 are coupled by a plurality of rungs 604 to define apertures 610 that facilitate flow past the contact element 416 with little pressure drop as discussed further below. A contact pad 606 adapted to contact the ball 406 couples the support elements 602 at the distal end 608 of each flexure 444. Optionally, the contact pad 606 may include a feature 612 formed thereon that defines the contact point between the pad 606 and the ball 406. In one embodiment, the feature 612 is a formed round element extending from the pad 606 toward the center on the element 414. [0064] The flexure 444 is generally fabricated from a resilient and conductive material suitable for use with process chemistries. In one embodiment, the flexure 444 is fabricated from gold plated beryllium copper. [0065] Returning to Figures 4A and 5A-B, the clamp bushing 416 includes a flared head 524 having a threaded post 522 extending therefrom. The clamp bushing may be fabricated from either a dielectric or conductive material, or a combination thereof, and in one embodiment, is fabricated from the same material as the housing 402. The flared head 524 includes a flared flat 592 that maintains the flexures 444 at an acute angle relative to the centerline of the contact assembly 250 so that the contact pads 606 of the contact elements 414 are positioned to spread around the surface of the ball 406 to prevent bending, binding and/or damage to the flexures 444 during assembly of the contact assembly 250 and through the range of motion of the ball 406. [0066] The post 522 of the clamp bushing 416 is disposed through a hole 546 in the base 442 and threads into a threaded portion 440 of a passage 436 formed through the adapter 404. A passage 418 formed through the clamp bushing 416 includes a drive feature 420 at an end disposed in the flared head 524. Similarly, the passage 436 includes a drive feature 438 in an end opposite the threaded portion 440. The drive features 420, 438 may be similar to those described above, and in one embodiment, are hexagonal holes suitable for use with a hex driver. The clamp bushing 416 is tightened to a torque that ensures good electrical contact between the contact element 414 and the adapter 404 without damaging the contact element 414 or other component. [0067] One or more slots or cross holes 590 are formed through the head 524 to the passage 418. The cross hole 590 routes at least a portion of the flow of electrolyte through the housing 402 so that the volume within the housing 402 is swept {i.e., the flow is routed so no areas within the housing experience a stagnant or no flow condition), thereby removing sludge or other contaminants that may otherwise accumulate within the housing 402 and eventually lead to poor electrical conduction to the substrate through the ball 406. In one embodiment, the cross holes 590 exit the clamp bushing 416 through the flats 492, thereby directing flow directly on the flexures 444 to ensure contaminants do not accumulate on the contact element 414 or cause the flexure 444 to adhere to the ball 406. Optionally, the passage 418 may be blind and the cross hole 590 coupled to the passage 436, such that the entire flow enters the housing through the cross hole 590 and is swept at a greater rate through the housing 402. Since the fluid inlet to the housing 402 (e.g., the cross hole 590) is opposite the outlet (e.g., the center opening of the seat 426), the entire volume of the housing 402 retaining the ball 406 is swept by electrolyte flow, thereby ensuring that sludge and/or other contaminants do not accumulate within the housing 402, resulting in extended robust electrical performance of the contact assembly 250. [0068] The adapter 404 is generally fabricated from an electrically conductive material compatible with process chemistries, and in one embodiment, is fabricated from stainless steel. The adapter 404 includes an annular flange 432 having a threaded post 430 extending from one side and a boss 434 extending from the opposite side. The threaded post 430 is adapted to mate with the contact plate 320 disposed in recess 208 of the upper plate 236 which couples the respective balls 406 in the contact assemblies 250 to the power source 242.

[0069] The boss 434 is received in the second end 410 of the housing 402 and provides a surface for clamping the contact element 414 thereto. The boss 434 additionally includes at least one threaded hole 506 disposed on the side of the boss 434 that engages a fastener 502 disposed through a hole 504 formed in the housing 402, thereby securing the housing 402 to the adapter 404 and capturing the ball 406 therein. In the embodiment depicted in Figure 5A, three fasteners are shown for coupling the housing 402 to the adapter 404 through counter-sunk holes 504. It is contemplated that the housing 402 and adapter 404 may be fastened by alternative methods or devices, such as staking, adhering, bonding, press fit, dowel pins, spring pins, rivets and retaining rings, among others.

[0070] The ball 406 may be solid or hollow and is typically fabricated from a conductive material. For example, the ball 406 may be fabricated from a metal, conductive polymer or a polymeric material filled with conductive material, such as metals, conductive carbon or graphite, among other conductive materials. Alternatively, the ball 406 may be formed from a solid or hollow core that is coated with a conductive material. The core may be non-conductive and at least partially coated with a conductive covering. Examples of suitable core materials include acrylonitrile butadiene styrene (ABS), polypropylene (PP), polyethylene (PE), polystyrene (PS), or polyamide-imide (PAI) (such as TORLON®), and the like. In one embodiment, the ball 406 has a TORLON^® or other polymer core coated with a layer of copper or other conductive material. [0071] The ball 406 is generally actuated toward the planarizing surface 364 by at least one of spring, buoyant or flow forces. In the embodiment depicted in Figure 4, the passages 436, 418 formed through the adapter 404 and clamp bushing 416 are coupled through the upper plate 236 to the electrolyte source 248. The electrolyte source 248 provides electrolyte through the passages 436 and 418 into the interior of the hollow housing 402. The electrolyte exits the housing 402 between the seat 426 and ball 406, thus causing the ball 406 to be biased toward the planarizing surface 364 and into contact with the substrate 122 during processing.

[0072] So that the force upon the ball 406 is consistent across the different elevations of the ball 406 within the housing 402, a relief or groove 428 is formed in the interior wall of the housing 402 to accept the distal ends (608 in Figure 6) of the flexures 444 to prevent restricting the flow of electrolyte passing the ball 406. An end of the groove 428 disposed away from the seat 426 is generally configured to being at or below the diameter of the ball 406 when the ball 406 is in the lowered position.

[0073] In one embodiment, electrochemical attack on the contact assembly 250 and/or balls 406 by processing chemistries and contaminant accumulation within the housing 402 may be minimized by keeping a bleeding flow of processing chemistry around the balls to substantially prevents self catalytic reaction of the balls in the process chemistry (by removing the catalyst byproduct and other contaminants away from the ball), thus minimizing chemical attack on the balls by eliminating the presence of static process chemistry. Flow is maintained past the ball 406 and out the housing 402 by the path provided by the groove 448 and/or relief hole 446.

[0074] In another embodiment, minimizing electrochemical attack and cleaning of the electrical contacts within the housing 402 are facilitated by rinsing the contact assembly 250 and/or balls 406 after processing. For example, a rinsing fluid source 450 may be coupled through a selector valve 452 between the electrolyte source 248 and the contact assembly 250. The selector valve 452 (or other valve, not shown) may be utilized to isolate the plenum 206 from the sources 248, 450. The selector valve 452 allows a rinsing fluid, such as de-ionized water, to be flowed through the plenum 206 and past the ball 406 during idle periods (when no substrates are being polished on the platen assembly 230) to prevent the ball 406 from being attacked by processing chemistries. It is contemplated that other configurations may be utilized to selectively couple the electrolyte source 248 and the rinsing fluid source 450 to the plenum 206, or that the electrolyte source 248 and the rinsing fluid source 450 may comprise a single fluid delivery system. Keeping a bleeding flow of processing chemistry around the balls all the time substantially prevents self catalytic reaction of the balls in the process chemistry (by removing the catalyst byproduct away from the ball), thus minimizing chemical attack on the balls by eliminating the presence of static process chemistry.

[0075] In another embodiment, a drain system 472 may be coupled to the plenum 206. The drain system 472 allows fluids in the plenum 206 (and contact assemblies 250 coupled thereto) to be removed without flowing onto the planarizing surface 364 of the pad assembly 222. A valve 470 selectively isolates the drain system 472 from the plenum 206 to control the flow of fluids therebetween. The advantages of utilizing the drain system 472 will become more apparent below.

[0076] Figure 7 is a perspective view of another embodiment of an ECMP station 790 having another embodiment of a contact assembly 700 disposed therein, and Figures 8-9 are perspective and partial sectional views of the contact assembly 700. The ECMP station 790 includes a platen assembly 750 that supports a processing pad assembly 760 (partially shown in Figure 7). The platen assembly 750 includes at least one contact assembly 700 projecting therefrom that is coupled to a power source 242. The contact assembly 700 is adapted to electrically bias a surface of the substrate 122 (shown in Figure 9) during processing. Although one contact assembly 700 is shown coupled to the center of the platen assembly 750 in Figure 7, any number of contact assemblies may be utilized and may be distributed in any number of configurations relative to the centerline of the platen assembly 750. The contact assembly 700 may also comprise a structure having a conductive upper surface suitable for biasing the substrate 122, as discussed above with respect to Figure 4.

[0077] The processing pad assembly 760 may be any pad assembly suitable for processing the substrate, including any of the embodiments described above. The processing pad assembly 760 may include an electrode 962 and a planarizing layer 966. In one embodiment, the planarizing layer 966 of the processing pad assembly 760 may include a planarizing surface 964 that is dielectric, such as a polyurethane pad. In another embodiment, the planarizing layer 966 of the processing pad assembly 760 may include a planarizing surface 964 that is conductive or made from a conductive composite (i.e., the conduct elements are dispersed integrally with or comprise the material comprising the planarizing surface), such as a polymer matrix having conductive particles dispersed therein or a conductive coated fabric, among others. In the embodiment wherein the planarizing surface 964 is conductive, the planarizing surface 964 and electrode 962 may be coupled to the power source 242 (shown by the dashed lines) via a switch 996 that allows power to be selectively switched between the contact assembly 700 and the conductive planarizing surface 964 to respectively facilitate bulk metal removal and residual metal removal from the substrate 122 without lifting the substrate 122 from the processing pad assembly 760. It is contemplated that the ECMP station 128 may also be similarly configured with a conductive processing pad assembly. [0078] The contact assembly 700 is generally coupled to a conductive contact terminal 910 disposed in the platen assembly 750 and extends at least partially through an aperture 968 formed in the processing pad assembly 760. The contact assembly 700 includes a housing 802 that retains a plurality of balls 406. The balls 406 are movably disposed in the housing 802, and may be disposed in a first position having at least a portion of the balls 406 extending above the planarizing surface 964 and at least a second position where the balls 406 are flush with the planarizing surface 964. The balls 406 are generally suitable for electrically biasing the substrate 122.

[0079] The housing 802 is removably coupled to the platen assembly 750 to facilitate replacement of the contact assembly 700 after a number of planarizing cycles. In one embodiment, the housing 802 is coupled to the platen assembly 750 by a plurality of screws 808. The housing 802 includes an upper housing 804 coupled to a lower housing 806 that retains the balls 406 therebetween. The upper housing 804 is fabricated from a dielectric material compatible with process chemistries. In one embodiment, the upper housing 804 is made of PEEK. The lower housing 806 is fabricated from a conductive material compatible with process chemistries. In one embodiment, the lower housing 806 is made of stainless steel or other electrically conductive material. The lower housing 806 is coupled by a bayonet fitting 912 to the contact terminal 910 which is in turn coupled to the power source 242. The housings 804, 806 may be coupled in any number of methods, including but not limited to, screwing, bolting, riveting, bonding, staking and clamping, among others. In the embodiment depicted in Figures 7-9, the housings 804, 806 are coupled by a plurality of screws 908.

[0080] The balls 406 are disposed in a plurality of apertures 902 formed through the housings 804, 806. An upper portion of each of the apertures 902 includes a seat 904 that extends into the aperture 902 from the upper housing 804. The seat 904 is configured to prevent the ball 406 from exiting the top end of the aperture 902.

[0081] A contact element 414 is disposed in each aperture 902 to electrically couple the ball 406 to the lower plate 806. Each of the contact elements 414 is coupled to the lower plate 806 by a respective clamp bushing 416. In one embodiment, a post 522 of the clamp bushing 416 is threaded into a threaded portion 914 of the aperture 902 formed through the housing 802. [0082] During processing, the balls 406 disposed within the housing 802 are actuated toward the planarizing surface 760 by at least one of spring, buoyant or flow forces. The balls 406 electrically couple the substrate 122 to the power source 242 and contact terminal 910 through the contact elements 414 and lower plate 806. Electrolyte, flowing through the housing 802 provides a conductive path between the electrode 962 and biased substrate 122, thereby driving an electrochemical mechanical planarizing process. [0083] In the embodiment depicted in Figure 9, a plenum 940 may be formed in a lower plate 942 of the platen assembly 750. An electrolyte source 248 is coupled to the plenum 940 and flows electrolyte to the planarizing surface 760 through the apertures 902 of the contact assembly 700. In this configuration, a top plate 944 may optionally be a unitary component with the lower plate 942. The plenum 940 may alternatively be disposed in the top plate 944 as described above.

[0084] To prevent electrochemical attack and prevent accumulation of sludge or other contaminants from degrading the performance of the balls 406 within the housing 802, the contact assembly 700 is configured to maintain a bleed flow of electrolyte out of the housing 802 past the ball 406 and to sweep the interior of the housing 802 with electrolyte flow. For example, one or more grooves 950 and/or relief holes 952 may be formed through the housing 802 allowing flow to exit the housing 802 during conditions where the ball 406 is in contact with the seat 904. Additionally, the clamp bushing 416 may include a cross hole 590 to sweep the portion of the housing 802 as described above with reference to the contact assembly 250. Optionally, the lower housing 806 may include holes 954 formed therethrough to allow electrolyte to sweep alongside the clamp bushing 416, thereby ensuring the entire volume of the housing 802 retaining each ball 406 has no unswept regions.

[0085] As described with reference to Figure 4A, the platen assembly 750 of the ECPM station 790 includes a drain system 472 selectively coupled to the plenum 940 by a valve 470. The drain system 472 allows fluids in the plenum 206 (and contact assemblies 250 coupled thereto) to be removed without flowing onto the surface of the pad assembly 760.

[0086] Figure 10 depicts a flow diagram of one embodiment of a method 1000 for maintaining the contact assembly 700 in a clean condition. The method may also be practiced using the other embodiments of the ECMP stations described herein. The method begins at step 1002 by clearing the center portion (e.g., the area over the contact assembly 700) of excess electrolyte. This may be accomplished by rotating the platen 750 at an RPM of less than about 25, for example 10-15 RPM.

[0087] At step 1004, the valve 470 is opened to allow the electrolyte disposed in the plenum 940 and contact assembly 700 to be removed into the drain system 472. In one embodiment, the drain system 472 includes a vacuum source to assist in removing the fluids from the plenum 940 and contact assembly 700. The platen rotation may be continued or stopped during this and subsequent steps.

[0088] At step 1006, the valve 470 is closed and the valve 452 is opened to couple the rinsing fluid source 450 to the plenum 940. The rinsing fluid source 450 provides a rinsing fluid, as described above, to clean the contact elements of the contact assembly 700. The rinsing fluid may optionally include one or more chemical agents that restore the electrical conductive properties to the surface of the contact elements, such as the balls 406, of the contact assembly 700.

[0089] In one embodiment, the rinsing fluid source 450 provides a predetermined amount of rinsing fluid such that little or no rinsing fluid is flowed out of the contact assembly 700. Advantageously, this prevents contamination of electrolyte remaining on the pad assembly that may be utilized in subsequent substrate processing. Thus, in this embodiment, the volume of rinsing fluid provided is substantially equal to the volume of the plenum 940 and associated electrolyte passages disposed in the platen 750 and contact assembly 700. [0090] At step 1008, the valve 452 is closed and the valve 470 is opened to couple the plenum 940 to the drain system 472. The drain system 472 removes the rinsing fluid from the contact assembly 700 and plenum 750. Optionally, steps 1006, 1008 may be repeated to wash the balls 406 of the contact assembly 700. Alternatively, the step 1006 may be timed to soak the balls 406 for a predefined period of time, for example, the time approximately equal to the time required to index a substrate between ECMP stations. [0091] At step 1010, the valve 470 is closed and the valve 452 is opened to couple the electrolyte source 248 to the plenum 940. The electrolyte source 248 fills the contact assembly 700 with electrolyte. As only the electrolyte is replaced in the plenum 940 and contact assembly 700 during the cleaning process while the electrolyte remaining on the processing pad 760 is reused, the amount of electrolyte consumed while cleaning the electrical contacts is minimized, which provides a considerable savings in the cost of consumables. [0092] The method 1000 may be utilized as needed, periodically, or before each substrate is processed in the ECMP station 790. It has been demonstrated that more frequent cleaning of the contact assembly 700 reduces the creep of processing times associated with repetitive processing without electrical contact cleaning, and thus provides a stable, repeatable process. [0093] Figure 11 depicts another embodiment of the ECMP station 1100. The ECMP station 1100 is substantially similar to the ECMP station 790 described above, except with the addition of a drain channel 1102 disposed radially outward of the contact assembly 700. The drain channel 1102 is formed through the platen 750 outward of the plenum 940, and is coupled to a drain system 1106. The drain system 1106 is substantially similar to the drain system 450 described above, and may be selectively isolated from the channel 1102 by a valve 1104.

[0094] Figure 12 depicts a flow diagram of another embodiment of a method 1200 for maintaining the contact assembly 700 in a clean condition. The method may also be practiced using the other embodiments of the ECMP stations described herein. The method begins at step 1202 by opening the valve 1104 to allow the electrolyte disposed in the plenum 940 and in the contact assembly 700 to be removed into the drain system 1106. In one embodiment, the drain system 1106 includes a vacuum source to assist in removing the fluids from the plenum 940 and contact assembly 700. The platen may optionally be rotated or stopped during this and subsequent steps. [0095] In one embodiment, the platen 750 is rotated at an RPM of less than about 25, for example 10-15 RPM, to move the fluids disposed on top of the contact assembly into the channel 1102. The position of the channel 1102 circumscribing the contact assembly 700 provides a barrier that prevents mixing of fluids flowing out of the contact assembly 700 from reaching the processing pad 760.

[0096] At step 1204, the valve 452 is opened to couple the rinsing fluid source 450 to the plenum 940. The rinsing fluid source 450 provides a rinsing fluid, as described above, to clean the contact elements of the contact assembly 700. The rinsing fluid flows through the contact assembly 700 and into the drain system 1106, thus preventing contamination of electrolyte remaining on the processing pad 760 that may be utilized in subsequent processing operation.

[0097] In one embodiment, the rinsing fluid source 450 provides a rinsing fluid at rate of about 1 to about 5 liters per minute. In another embodiment, the rinsing fluid source 450 provides a rinsing fluid, at rate of about 2 liters per minute

[0098] Prior to processing, the valve 452 is opened to couple the electrolyte source 248 to the plenum 940. The electrolyte source 248 fills the contact assembly 700 with electrolyte. Once the electrolyte displaces the rinsing fluid in the plenum 940 and contact assembly 700, the drain system 1106 may be isolated to keep the electrolyte from being drawn into the drain system during processing. It is contemplated that the rinsing fluid in the channel 1102 may be replaced with electrolyte prior to closing the valve 1104.

[0099] Figure 13 is a sectional view of another ECMP station 1300. The ECMP station 1300 is substantially similar to those described above, and includes a vacuum cup 1302 that may be selectively positioned over the contact assembly 700. The vacuum cup 1302 includes an internal volume 1304 that covers the contact assembly 700, and may additionally include a soft sealing surface 1314 to avoid damage to the contact assembly 700 and/or processing pad 760 when in contact therewith.

[00100] The vacuum cup 1302 is positioned over the contact assembly 700 utilizing an arm 1306 coupled to a motor 1308. The arm 1306 is generally coupled to the base 140 of the ECMP station 1300, or other suitable location. [00101] The interior volume 1304 of the vacuum cup 1302 is coupled to a vacuum source 1312 via a tube 1310 routed through the arm 1306. The vacuum source 1312 allows the electrolyte and/or rinsing fluids to be drawn through the contact assembly 700 in any of the methods described above while preventing fluid utilized during cleaning from reaching the surface of the processing pad 760.

[00102] Figure 14 depicts a plan view of another embodiment of an ECMP station 1400. The station 1400 includes a robot 1402 configured to selectively exchange contact assemblies 700 between the platen 750 and a rinse station 1404 disposed laterally to the platen 750. In one embodiment, the rinse station 1404 is filled with a rinsing fluid that soaks the contact elements of the contact assembly not in use (shown as 700B in Figure 14) while a cleaned contact assembly (shown as 700A in Figure 14) is utilized on the platen 750 for processing.

[00103] A portion of an exemplary mode of operation of the processing system 100 is described primarily with reference to Figure 2. In operation, the substrate 122 is retained in the planarizing head 204 and moved over the processing pad assembly 222 disposed on the platen assembly 230 of the first ECMP station 128. The planarizing head 204 is lowered toward the platen assembly 230 to place the substrate 122 in contact with the planarizing material. Electrolyte is supplied to the processing pad assembly 222 through the outlet 274 and flows into the processing pad assembly 222. [00104] A bias voltage is applied from the power source 242 between the contact assemblies 250 and the electrode 292 of the pad assembly 222. The contact assemblies 250 are in contact with the substrate and apply a bias thereto. The electrolyte filling the apertures 390 between the electrode 292 and the substrate 122 provides a conductive path between the power source 242 and substrate 122 to drive an electrochemical mechanical planarizing process that results in the removal of conductive material, such as copper, disposed on the surface of the substrate 122, by an anodic dissolution method. [00105] Once the substrate 122 has been adequately planarized by removal of conductive material at the first ECMP station 128, the planarizing head 204 is raised to remove the substrate 122 from contact with the platen assembly 230 and the processing pad assembly 222. The substrate 122 may be transferred to one of the other ECMP stations 128, the second ECMP station 130 or the CMP station 132 for further processing before removal from the planarizing module 106. While the substrate is being transferred, the contact assemblies of the ECMP station 128 (or others described above) are cleaned to provide process uniformity and good processing results.

[00106] Figure 15 is a sectional view of one embodiment of the second ECMP station 130. The second ECMP station 130 generally includes a platen 1502 that supports a fully conductive processing pad assembly 1504. The platen 1502 may be configured similar to the platen assembly 230 described above to deliver electrolyte through the processing pad assembly 1504, or the platen 1502 may have a fluid delivery arm 1506 disposed adjacent thereto configured to supply electrolyte to a planarizing surface of the processing pad assembly 1504.

[00107] In one embodiment, the processing pad assembly 1504 includes interposed pad 1512 sandwiched between a conductive pad 1510 and an electrode 1514. The conductive pad 1510 is substantially conductive across its top processing surface and is generally made from a conductive material or a conductive composite (i.e., the conductive elements are dispersed integrally with or comprise the material comprising the planarizing surface), such as a polymer matrix having conductive particles dispersed therein or a conductive coated fabric, among others. The conductive pad 1510 and the electrode 1514 may be fabricated like the conductive pad 966 and the electrode 292 described above. The processing pad assembly 1504 is generally permeable or perforated to allow electrolyte to pass between the electrode 1514 and top surface 1520 of the conductive pad 1510. In the embodiment depicted in Figure 15, the processing pad assembly 1504 is perforated by apertures 1522 to allow electrolyte to flow therethrough. In one embodiment, the conductive pad 1510 is comprised of a conductive material disposed on a polymer matrix disposed on a conductive fiber, for example, tin particles in a polymer matrix disposed on a woven copper coated polymer. The conductive pad 1510 may also be utilized for the contact assembly 700 in the embodiment of Figure 7. [00108] A conductive foil 1516 may additionally be disposed between the conductive pad 1510 and the subpad 1512. The foil 1516 is coupled to a power source 242 and provides uniform distribution of voltage applied by the source 242 across the conductive pad 1510. Additionally, the pad assembly 1504 may include an interposed pad 1518, which, along with the foil 1516, provides mechanical strength to the overlying conductive pad 1510. The foil 1516 and interposed pad 1518 may be configured similar to the interposed layer 1538 and conductive backing 1536 described above.

[00109] Another portion of an exemplary mode of operation of the processing system 150 is described primarily with reference to Figure 15. In operation, the substrate 122 retained in the planarizing head 204 is moved over the processing pad assembly 1504 disposed on the platen assembly 1502 of the second ECMP station 130. The planarizing head 204 is lowered toward the platen assembly 1502 to place the substrate 122 in contact with the top surface 1520 of the conductive pad 1510. Electrolyte is supplied to the processing pad assembly 222 through the delivery arm 1506 and flows into the processing pad assembly 1504.

[00110] A bias voltage is applied from the power source 242 between the top surface 1520 of the conductive pad 1510 and the electrode 1514 of the pad assembly 1504. The top surface 1520 of the conductive pad 1510 is in contact with the substrate and applies an electrical bias thereto. The electrolyte filling the apertures 1522 between the electrode 1514 and the substrate 122 provides a conductive path between the power source 242 and substrate 122 to drive an electrochemical mechanical planarizing process that results in the removal of conductive material, such as copper, disposed on the surface of the substrate 122, by an anodic dissolution method. As the top surface 1520 of the conductive pad 1510 is fully conductive, residual material, such as discrete islands of copper not completely removed through processing at the bulk ECMP station 158, may be efficiently removed.

[00111] Once the substrate 122 has been adequately planarized by removal of residual conductive material at the second ECMP station 130, the planarizing head 204 is raised to remove the substrate 122 from contact with the platen assembly 1502 and the processing pad assembly 1504. The substrate 122 may be transferred to another residual ECMP station or one of the CMP station 132 for further processing before removal from the planarizing module 156. [00112] Thus, the present invention provides an improved apparatus and method for electrochemically planarizing a substrate. The apparatus advantageously facilitates efficient bulk and residual material removal from a substrate while protecting process components from damage during idle periods between processing. It is also contemplated that an apparatus arranged as described by the teachings herein, may be configured with solely the bulk ECMP stations 108, with solely the residual ECMP stations 130, with one or more bulk and/or residual ECMP stations 130 arranged in cooperation with a conventional CMP station 132, or in any combination thereof. It is also contemplated that a method and apparatus as described by the teachings herein, may be utilized to deposit materials onto a substrate by reversing the polarity of the bias applied to the electrode and the substrate. [00113] While the foregoing is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What is claimed is:

1. A method for cleaning a contact assembly in an electroprocessing apparatus, comprising: draining electrolyte from the contact assembly; and flowing a rinsing fluid into the contact assembly.

2. The method of claim 1 , wherein flowing the rinsing fluid into the contact assembly comprises: flowing deionized water into the contact assembly.

3. The method of claim 1 , wherein flowing the rinsing fluid into the contact assembly comprises: providing an agent that restores an electric property of the contact assembly.

4. The method of claim 1 further comprising: draining the rinsing fluid from the contact assembly; and flowing electrolyte into the contact assembly.

5. The method of claim 1 , wherein draining electrolyte from the contact assembly further comprises: draining a plenum disposed in a platen.

6. The method of claim 1 , wherein draining electrolyte from the contact assembly further comprises: sucking the fluid out of the contact assembly.

7. The method of claim 1 further comprising: rotating the platen while draining the rinsing fluid from the contact assembly.

8. A method for cleaning a contact assembly in an electroprocessing apparatus, comprising: preventing fluid from passing between an interface of the contact assembly and a pad disposed outward thereof; flowing a rinsing fluid into the contact assembly; and draining fluid flowing out of the contact assembly.

9. The method of claim 8, wherein draining fluid flowing out of the contact assembly further comprises: sucking the fluid through a passage formed radially outward of the contact assembly.

10. The method of claim 8 further comprising: rotating the platen flowing the rinsing fluid into the contact assembly.

11. The method of claim 8 further comprising: flowing electrolyte into the contact assembly to displace the rinsing fluid; and removing the rinsing fluid.

12. An electroprocessing apparatus, comprising: a platen; a processing pad disposed on the platen; a contact assembly coupled to the platen; and a drain formed through the platen and disposed radially outwards of the contact assembly.