WO2007008470A3 - Systems and methods for euv light source metrology - Google Patents

Systems and methods for euv light source metrology Download PDF

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Publication number
WO2007008470A3
WO2007008470A3 PCT/US2006/025792 US2006025792W WO2007008470A3 WO 2007008470 A3 WO2007008470 A3 WO 2007008470A3 US 2006025792 W US2006025792 W US 2006025792W WO 2007008470 A3 WO2007008470 A3 WO 2007008470A3
Authority
WO
WIPO (PCT)
Prior art keywords
euv light
euv
mirror
light source
systems
Prior art date
Application number
PCT/US2006/025792
Other languages
French (fr)
Other versions
WO2007008470A2 (en
Inventor
Igor V Fomenkov
Norbert R Bowering
Jerzy R Hoffman
Original Assignee
Cymer Inc
Igor V Fomenkov
Norbert R Bowering
Jerzy R Hoffman
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cymer Inc, Igor V Fomenkov, Norbert R Bowering, Jerzy R Hoffman filed Critical Cymer Inc
Priority to JP2008520314A priority Critical patent/JP4913808B2/en
Priority to EP06786101.3A priority patent/EP1904818A4/en
Publication of WO2007008470A2 publication Critical patent/WO2007008470A2/en
Publication of WO2007008470A3 publication Critical patent/WO2007008470A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure

Abstract

Systems and methods for EUV Light Source metrology are disclosed. In a first aspect, a system for measuring an EUV light source power output may include a photoelectron source material disposed along an EUV light pathway to expose the material and generate a quantity of photoelectrons. The system may further include a detector for detecting the photoelectrons and producing an output indicative of EUV power. In another aspect, a system for measuring an EUV light intensity may include a multi-layer mirror, e.g., Mo/Si, disposable along an EUV light pathway to expose the mirror and generate a photocurrent in the mirror. A current monitor may be connected to the mirror to measure the photocurrent and produce an output indicative of EUV power. In yet another aspect, an off-line EUV metrology system may include an instrument for measuring a light characteristic and MoSi2/Si multi layer mirror.
PCT/US2006/025792 2005-07-08 2006-06-29 Systems and methods for euv light source metrology WO2007008470A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008520314A JP4913808B2 (en) 2005-07-08 2006-06-29 System and method for EUV light source measurement
EP06786101.3A EP1904818A4 (en) 2005-07-08 2006-06-29 Systems and methods for euv light source metrology

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/177,501 2005-07-08
US11/177,501 US7394083B2 (en) 2005-07-08 2005-07-08 Systems and methods for EUV light source metrology

Publications (2)

Publication Number Publication Date
WO2007008470A2 WO2007008470A2 (en) 2007-01-18
WO2007008470A3 true WO2007008470A3 (en) 2007-11-22

Family

ID=37618026

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/025792 WO2007008470A2 (en) 2005-07-08 2006-06-29 Systems and methods for euv light source metrology

Country Status (4)

Country Link
US (1) US7394083B2 (en)
EP (1) EP1904818A4 (en)
JP (2) JP4913808B2 (en)
WO (1) WO2007008470A2 (en)

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US7655925B2 (en) * 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US7812329B2 (en) * 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US20090095924A1 (en) * 2007-10-12 2009-04-16 International Business Machines Corporation Electrode design for euv discharge plasma source
US8519366B2 (en) * 2008-08-06 2013-08-27 Cymer, Inc. Debris protection system having a magnetic field for an EUV light source
US8445876B2 (en) * 2008-10-24 2013-05-21 Gigaphoton Inc. Extreme ultraviolet light source apparatus
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US8124939B2 (en) * 2009-09-24 2012-02-28 Asml Netherlands B.V. Radiation detector
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JP2011198609A (en) * 2010-03-19 2011-10-06 Ushio Inc Irradiance distribution detection method in extreme ultraviolet light source device, and location adjustment method for light focusing optical means
JP5846572B2 (en) * 2011-07-27 2016-01-20 ギガフォトン株式会社 Chamber apparatus, extreme ultraviolet light generation apparatus, and control method of extreme ultraviolet light generation apparatus
US9453801B2 (en) 2012-05-25 2016-09-27 Kla-Tencor Corporation Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems
US20140158894A1 (en) * 2012-12-12 2014-06-12 Kla-Tencor Corporation Method and device using photoelectrons for in-situ beam power and stability monitoring in euv systems
DE102013201193A1 (en) * 2013-01-25 2014-07-31 Carl Zeiss Smt Gmbh Method for determining the phase position and / or the thickness of a contamination layer on an optical element and EUV lithography device
TWI569688B (en) * 2014-07-14 2017-02-01 Ａｓｍｌ荷蘭公司 Calibration of photoelectromagnetic sensor in a laser source
US9239268B1 (en) 2014-07-14 2016-01-19 Asml Netherlands B.V. Calibration of photoelectromagnetic sensor in a laser source
WO2018123035A1 (en) * 2016-12-28 2018-07-05 ギガフォトン株式会社 Target photographing apparatus and extreme ultraviolet light generation apparatus
DE102018115113A1 (en) * 2018-06-22 2019-12-24 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh X-ray detector
KR20210078494A (en) * 2018-10-26 2021-06-28 에이에스엠엘 네델란즈 비.브이. Light emission monitoring
DE102022209922A1 (en) 2022-09-21 2023-09-21 Carl Zeiss Smt Gmbh REFLECTOMETER DEVICE, MEASURING ARRANGEMENT, METHOD FOR PRODUCING AN OPTICAL REFERENCE ELEMENT AND METHOD FOR MEASURING A SAMPLE OF A LITHOGRAPHY SYSTEM

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Also Published As

Publication number Publication date
JP2009500624A (en) 2009-01-08
US20070008517A1 (en) 2007-01-11
EP1904818A4 (en) 2013-05-22
US7394083B2 (en) 2008-07-01
EP1904818A2 (en) 2008-04-02
JP5613130B2 (en) 2014-10-22
JP4913808B2 (en) 2012-04-11
JP2012054580A (en) 2012-03-15
WO2007008470A2 (en) 2007-01-18

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