WO2007008399A3 - Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece - Google Patents

Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece Download PDF

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Publication number
WO2007008399A3
WO2007008399A3 PCT/US2006/024938 US2006024938W WO2007008399A3 WO 2007008399 A3 WO2007008399 A3 WO 2007008399A3 US 2006024938 W US2006024938 W US 2006024938W WO 2007008399 A3 WO2007008399 A3 WO 2007008399A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoluminescence
sample
specified material
material layers
workpiece
Prior art date
Application number
PCT/US2006/024938
Other languages
French (fr)
Other versions
WO2007008399A2 (en
Inventor
Steve Hummel
Tom Walker
Original Assignee
Accent Optical Tech Inc
Steve Hummel
Tom Walker
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Accent Optical Tech Inc, Steve Hummel, Tom Walker filed Critical Accent Optical Tech Inc
Publication of WO2007008399A2 publication Critical patent/WO2007008399A2/en
Publication of WO2007008399A3 publication Critical patent/WO2007008399A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6456—Spatial resolved fluorescence measurements; Imaging
    • G01N2021/646—Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method

Abstract

A method and apparatus uses photoluminescence to identify defects in one or more specified material layers of a sample. One or more filtering elements are used to filter out predetermined wavelengths of return light emitted from a sample. The predetermined wavelengths are selected such that only return light emitted from one or more specified material layers of the sample is detected. Additionally or alternatively, the wavelength of incident light directed into the sample may be selected to penetrate the sample to a given depth, or to excite only one or more selected material layers in the sample. Accordingly, defect data characteristic of primarily only the one or more specified material layers is generated.
PCT/US2006/024938 2005-07-06 2006-06-27 Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece WO2007008399A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69685305P 2005-07-06 2005-07-06
US60/696,853 2005-07-06

Publications (2)

Publication Number Publication Date
WO2007008399A2 WO2007008399A2 (en) 2007-01-18
WO2007008399A3 true WO2007008399A3 (en) 2007-12-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/024938 WO2007008399A2 (en) 2005-07-06 2006-06-27 Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece

Country Status (3)

Country Link
US (1) US7504642B2 (en)
TW (1) TWI439684B (en)
WO (1) WO2007008399A2 (en)

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WO2013023241A1 (en) * 2011-08-12 2013-02-21 Bt Imaging Pty Ltd Photoluminescence imaging of doping variations in semiconductor wafers
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US9875536B2 (en) * 2015-03-31 2018-01-23 Kla-Tencor Corp. Sub-pixel and sub-resolution localization of defects on patterned wafers
US10883941B2 (en) * 2015-05-04 2021-01-05 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging
US10012593B2 (en) 2015-05-04 2018-07-03 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging
US10018565B2 (en) * 2015-05-04 2018-07-10 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging with optical filtering
US9564854B2 (en) 2015-05-06 2017-02-07 Sunpower Corporation Photonic degradation monitoring for semiconductor devices
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Also Published As

Publication number Publication date
US20070008518A1 (en) 2007-01-11
US7504642B2 (en) 2009-03-17
TW200702653A (en) 2007-01-16
WO2007008399A2 (en) 2007-01-18
TWI439684B (en) 2014-06-01

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