WO2007002386A3 - Euv light source collector lifetime improvements - Google Patents

Euv light source collector lifetime improvements Download PDF

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Publication number
WO2007002386A3
WO2007002386A3 PCT/US2006/024463 US2006024463W WO2007002386A3 WO 2007002386 A3 WO2007002386 A3 WO 2007002386A3 US 2006024463 W US2006024463 W US 2006024463W WO 2007002386 A3 WO2007002386 A3 WO 2007002386A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
source material
euv light
light source
coating layer
Prior art date
Application number
PCT/US2006/024463
Other languages
French (fr)
Other versions
WO2007002386A2 (en
Inventor
William N Partlo
Alexander I Ershov
Igor V Fomenkov
Oleh Khodykin
Original Assignee
Cymer Inc
William N Partlo
Alexander I Ershov
Igor V Fomenkov
Oleh Khodykin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cymer Inc, William N Partlo, Alexander I Ershov, Igor V Fomenkov, Oleh Khodykin filed Critical Cymer Inc
Priority to JP2008519425A priority Critical patent/JP5091130B2/en
Priority to EP06785428A priority patent/EP1899697B1/en
Publication of WO2007002386A2 publication Critical patent/WO2007002386A2/en
Publication of WO2007002386A3 publication Critical patent/WO2007002386A3/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component

Abstract

An apparatus and method for cleaning a plasma source material compound from a plasma produced EUV light source collector optic which may comprise reacting the plasma source material compound with hydrogen to form a hydride of the plasma source material from the plasma source material contained in the plasma source material compound on the collector optic. The method may further comprise initiating the reacting by introducing hydrogen into a plasma formation chamber containing the collector optic, and may further comprise removing the hydride from the collector optic, e.g., by cleaning plasma action and/or plasma source material sputtering, or other means as may be determined to be effective. An apparatus and method of extending the useful life of a plasma produced EUV light source collector coating layer may comprise in situ replacement of the material of the coating layer by deposition of the coating layer material onto the coating layer.
PCT/US2006/024463 2005-06-27 2006-06-23 Euv light source collector lifetime improvements WO2007002386A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008519425A JP5091130B2 (en) 2005-06-27 2006-06-23 Improvement of EUV light source collector life
EP06785428A EP1899697B1 (en) 2005-06-27 2006-06-23 Euv light source collector lifetime improvements

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/168,190 2005-06-27
US11/168,190 US7365349B2 (en) 2005-06-27 2005-06-27 EUV light source collector lifetime improvements

Publications (2)

Publication Number Publication Date
WO2007002386A2 WO2007002386A2 (en) 2007-01-04
WO2007002386A3 true WO2007002386A3 (en) 2008-03-13

Family

ID=37595868

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/024463 WO2007002386A2 (en) 2005-06-27 2006-06-23 Euv light source collector lifetime improvements

Country Status (4)

Country Link
US (1) US7365349B2 (en)
EP (1) EP1899697B1 (en)
JP (3) JP5156625B2 (en)
WO (1) WO2007002386A2 (en)

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EP2158519B1 (en) * 2007-06-12 2012-08-15 Philips Intellectual Property & Standards GmbH Optical device and method of in situ treating an euv optical component to enhance a reduced reflectivity
JP5191541B2 (en) * 2007-08-23 2013-05-08 エーエスエムエル ネザーランズ ビー．ブイ． Module and method for generating extreme ultraviolet radiation and lithographic projection apparatus
US8901521B2 (en) 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
US7655925B2 (en) * 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US7812329B2 (en) * 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US7760341B2 (en) * 2007-09-04 2010-07-20 Sematech, Inc. Systems and methods for in-situ reflectivity degradation monitoring of optical collectors used in extreme ultraviolet (EUV) lithography processes
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EP2300879B1 (en) * 2008-07-18 2011-10-12 Philips Intellectual Property & Standards GmbH Extreme uv radiation generating device comprising a contamination captor and method of purifying tin in said device
US8519366B2 (en) * 2008-08-06 2013-08-27 Cymer, Inc. Debris protection system having a magnetic field for an EUV light source
KR101052922B1 (en) * 2008-12-22 2011-07-29 주식회사 하이닉스반도체 Extreme ultraviolet light source device
JP5559562B2 (en) 2009-02-12 2014-07-23 ギガフォトン株式会社 Extreme ultraviolet light source device
JP5687488B2 (en) 2010-02-22 2015-03-18 ギガフォトン株式会社 Extreme ultraviolet light generator
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US9029797B2 (en) * 2013-07-25 2015-05-12 Agilent Technologies, Inc. Plasma-based photon source, ion source, and related systems and methods

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WO2007002386A2 (en) 2007-01-04
JP5091130B2 (en) 2012-12-05
JP2008544574A (en) 2008-12-04
JP5156625B2 (en) 2013-03-06
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US20070023705A1 (en) 2007-02-01
US7365349B2 (en) 2008-04-29
JP2008544474A (en) 2008-12-04

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