WO2007002151A3 - Packaging technique for the fabrication of polarized light emitting diodes - Google Patents

Packaging technique for the fabrication of polarized light emitting diodes Download PDF

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Publication number
WO2007002151A3
WO2007002151A3 PCT/US2006/024078 US2006024078W WO2007002151A3 WO 2007002151 A3 WO2007002151 A3 WO 2007002151A3 US 2006024078 W US2006024078 W US 2006024078W WO 2007002151 A3 WO2007002151 A3 WO 2007002151A3
Authority
WO
WIPO (PCT)
Prior art keywords
package
led
marker
polarization direction
die
Prior art date
Application number
PCT/US2006/024078
Other languages
French (fr)
Other versions
WO2007002151A2 (en
Inventor
Hisashi Masui
Shuji Nakamura
Steven P Denbaars
Original Assignee
Univ California
Hisashi Masui
Shuji Nakamura
Steven P Denbaars
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Hisashi Masui, Shuji Nakamura, Steven P Denbaars filed Critical Univ California
Priority to EP06785239A priority Critical patent/EP1905088A4/en
Priority to KR1020087001554A priority patent/KR101310332B1/en
Priority to JP2008518342A priority patent/JP5301988B2/en
Publication of WO2007002151A2 publication Critical patent/WO2007002151A2/en
Publication of WO2007002151A3 publication Critical patent/WO2007002151A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/13362—Illuminating devices providing polarized light, e.g. by converting a polarisation component into another one
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

A polarized light emitting diode (LED) (500) includes a marker (504) indicating a polarization direction. A package (506) for the LED also includes a marker (508) indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to the package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.
PCT/US2006/024078 2005-06-21 2006-06-21 Packaging technique for the fabrication of polarized light emitting diodes WO2007002151A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06785239A EP1905088A4 (en) 2005-06-21 2006-06-21 Packaging technique for the fabrication of polarized light emitting diodes
KR1020087001554A KR101310332B1 (en) 2005-06-21 2006-06-21 Light emitting diode device and method of fabricating the same
JP2008518342A JP5301988B2 (en) 2005-06-21 2006-06-21 Packaging technology for fabrication of polarized light-emitting diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US69251405P 2005-06-21 2005-06-21
US60/692,514 2005-06-21

Publications (2)

Publication Number Publication Date
WO2007002151A2 WO2007002151A2 (en) 2007-01-04
WO2007002151A3 true WO2007002151A3 (en) 2007-06-28

Family

ID=37595773

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/024078 WO2007002151A2 (en) 2005-06-21 2006-06-21 Packaging technique for the fabrication of polarized light emitting diodes

Country Status (6)

Country Link
US (2) US7518159B2 (en)
EP (1) EP1905088A4 (en)
JP (1) JP5301988B2 (en)
KR (1) KR101310332B1 (en)
TW (1) TWI397199B (en)
WO (1) WO2007002151A2 (en)

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TWI397199B (en) * 2005-06-21 2013-05-21 Japan Science & Tech Agency Packaging technique for the fabrication of polarized light emitting diodes
TWI533351B (en) * 2006-12-11 2016-05-11 美國加利福尼亞大學董事會 Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
JP2009070893A (en) * 2007-09-11 2009-04-02 Rohm Co Ltd Light-emitting device and manufacturing method therefor
JP5263771B2 (en) * 2007-11-12 2013-08-14 学校法人慶應義塾 Surface light emitting device and polarized light source
JP2009123803A (en) * 2007-11-13 2009-06-04 Sanyo Electric Co Ltd Light emitting diode device
US8125579B2 (en) * 2007-12-19 2012-02-28 Texas Instruments Incorporated Polarized light emitting diode and use thereof
JP2011511463A (en) * 2008-02-01 2011-04-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Increased polarization of nitride light-emitting diodes due to increased indium incorporation
WO2009097611A1 (en) * 2008-02-01 2009-08-06 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
WO2010065163A2 (en) * 2008-06-05 2010-06-10 Soraa, Inc. Highly polarized white light source by combining blue led on semipolar or nonpolar gan with yellow led on semipolar or nonpolar gan
JP2010027924A (en) * 2008-07-22 2010-02-04 Sumitomo Electric Ind Ltd Group iii nitride light-emitting diode
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
KR20110034695A (en) * 2008-08-05 2011-04-05 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Tunable white light based on polarization sensitive light-emitting diodes
US8247886B1 (en) * 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
CN102356477A (en) * 2009-04-09 2012-02-15 松下电器产业株式会社 Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating device
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US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
KR101368906B1 (en) 2009-09-18 2014-02-28 소라, 인코포레이티드 Power light emitting diode and method with current density operation
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
EP2472608B1 (en) 2009-12-09 2013-09-18 Panasonic Corporation Lighting device with nitride-based semiconductor light-emitting elements, liquid crystal display device
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US20110186874A1 (en) * 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
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US20110182056A1 (en) * 2010-06-23 2011-07-28 Soraa, Inc. Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8313964B2 (en) 2010-06-18 2012-11-20 Soraa, Inc. Singulation method and resulting device of thick gallium and nitrogen containing substrates
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Also Published As

Publication number Publication date
US7518159B2 (en) 2009-04-14
EP1905088A2 (en) 2008-04-02
EP1905088A4 (en) 2012-11-21
KR20080030033A (en) 2008-04-03
US20090065798A1 (en) 2009-03-12
JP5301988B2 (en) 2013-09-25
US7723746B2 (en) 2010-05-25
WO2007002151A2 (en) 2007-01-04
US20060284206A1 (en) 2006-12-21
TWI397199B (en) 2013-05-21
KR101310332B1 (en) 2013-09-23
TW200705723A (en) 2007-02-01
JP2008544552A (en) 2008-12-04

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