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Publication numberWO2007002151 A3
Publication typeApplication
Application numberPCT/US2006/024078
Publication date28 Jun 2007
Filing date21 Jun 2006
Priority date21 Jun 2005
Also published asEP1905088A2, EP1905088A4, US7518159, US7723746, US20060284206, US20090065798, WO2007002151A2
Publication numberPCT/2006/24078, PCT/US/2006/024078, PCT/US/2006/24078, PCT/US/6/024078, PCT/US/6/24078, PCT/US2006/024078, PCT/US2006/24078, PCT/US2006024078, PCT/US200624078, PCT/US6/024078, PCT/US6/24078, PCT/US6024078, PCT/US624078, WO 2007/002151 A3, WO 2007002151 A3, WO 2007002151A3, WO-A3-2007002151, WO2007/002151A3, WO2007002151 A3, WO2007002151A3
InventorsSteven P Denbaars, Hisashi Masui, Shuji Nakamura
ApplicantSteven P Denbaars, Hisashi Masui, Shuji Nakamura, Univ California
Export CitationBiBTeX, EndNote, RefMan
External Links: Patentscope, Espacenet
Packaging technique for the fabrication of polarized light emitting diodes
WO 2007002151 A3
A polarized light emitting diode (LED) (500) includes a marker (504) indicating a polarization direction. A package (506) for the LED also includes a marker (508) indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to the package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.
Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US6072197 *24 Feb 19976 Jun 2000Fujitsu LimitedSemiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US20030089899 *16 Jul 200215 May 2003Lieber Charles M.Nanoscale wires and related devices
Non-Patent Citations
1 *See also references of EP1905088A2
International ClassificationH01L33/20, H01L29/22, H01L29/20, H01L29/18, H01L27/15, H01L29/16, H01L21/00, H01L33/16, H01L33/48
Cooperative ClassificationH01L33/483, H01L33/16, H01L23/544, H01L33/20, G02F1/133603, H01L2924/0002, G02F1/13362, H01L2223/54473, H01L2223/54486, H01L2223/54426
European ClassificationH01L23/544, H01L33/48C, H01L33/16
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