WO2006131427A3 - Image sensor provided with a thinned semiconductor substrate with backside metallisation - Google Patents

Image sensor provided with a thinned semiconductor substrate with backside metallisation Download PDF

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Publication number
WO2006131427A3
WO2006131427A3 PCT/EP2006/062043 EP2006062043W WO2006131427A3 WO 2006131427 A3 WO2006131427 A3 WO 2006131427A3 EP 2006062043 W EP2006062043 W EP 2006062043W WO 2006131427 A3 WO2006131427 A3 WO 2006131427A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
semiconductor substrate
thinned
metal layer
photosensitive
Prior art date
Application number
PCT/EP2006/062043
Other languages
French (fr)
Other versions
WO2006131427A2 (en
Inventor
Pierre Blanchard
Original Assignee
E2V Semiconductors
Pierre Blanchard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E2V Semiconductors, Pierre Blanchard filed Critical E2V Semiconductors
Publication of WO2006131427A2 publication Critical patent/WO2006131427A2/en
Publication of WO2006131427A3 publication Critical patent/WO2006131427A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures

Abstract

The invention relates to electronic image sensors provided with a matrix array of photosensitive points, in particular to large-size sensors (several centimetres on side) which operate with a high-sampling frequency. The inventive image sensor comprises a transfer substrate (20), a thinned semiconductor substrate (12) provided with a photosensitive area array and associated electronic circuits embodied on the front face thereof. An opaque metal layer which is substantially conductive, perforated and provided with openings opposite to each photosensitive area is formed on the rear face of said thinned substrate, wherein said metal layer forms an aperture grid (30) which is arranged in front of the photosensitive matrix array and provided with an electrical connection for supplying an uniform potential to the rear face of the thinned substrate in front of the entire matrix array. Conductive via holes are formed in the semiconductor substrate for connecting said layer to metal pads (14) formed on the front face of the substrate prior to be transferred to the transfer substrate. The invention makes it possible to improve the performance of the high-sampling frequency sensor by means of said metal layer.
PCT/EP2006/062043 2005-06-10 2006-05-04 Image sensor provided with a thinned semiconductor substrate with backside metallisation WO2006131427A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0505929A FR2887076B1 (en) 2005-06-10 2005-06-10 IMAGINE SEMICONDUCTOR SUBSTRATE IMAGE SENSOR WITH REAR METALLIZATION
FR0505929 2005-06-10

Publications (2)

Publication Number Publication Date
WO2006131427A2 WO2006131427A2 (en) 2006-12-14
WO2006131427A3 true WO2006131427A3 (en) 2007-03-29

Family

ID=35744691

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/062043 WO2006131427A2 (en) 2005-06-10 2006-05-04 Image sensor provided with a thinned semiconductor substrate with backside metallisation

Country Status (2)

Country Link
FR (1) FR2887076B1 (en)
WO (1) WO2006131427A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2910705B1 (en) * 2006-12-20 2009-02-27 E2V Semiconductors Soc Par Act CONNECTION PLATE STRUCTURE FOR IMAGE SENSOR ON AMINED SUBSTRATE
FR3077678B1 (en) 2018-02-07 2022-10-21 St Microelectronics Rousset METHOD FOR DETECTING DAMAGE TO THE INTEGRITY OF A SEMICONDUCTOR SUBSTRATE OF AN INTEGRATED CIRCUIT FROM ITS REAR FACE, AND CORRESPONDING DEVICE
CN112103304B (en) * 2020-09-22 2024-02-09 武汉新芯集成电路制造有限公司 Backside illuminated sensor, manufacturing method thereof and layout structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19838430A1 (en) * 1998-08-24 2000-03-09 Fraunhofer Ges Forschung Photodetector array, especially a photodiode array, is produced by forming a common electrode on the radiation incident back face to avoid radiation shadowing by front face wiring of individual electrodes
US20020000562A1 (en) * 2000-04-20 2002-01-03 Carlson Lars S. Fabrication of low leakage-current backside illuminated photodiodes
US20030209652A1 (en) * 2002-05-10 2003-11-13 Hamamatsu Photonics K.K. Back illuminated photodiode array and method of manufacturing the same
US20040266052A1 (en) * 2001-08-31 2004-12-30 Eric Pourquier Method for making a color image sensor with pad-to pad soldered supporting substrate
US20050032265A1 (en) * 2001-08-31 2005-02-10 Eric Pourquier Method for making a color image sensor with recessed contact apertures prior to thinning

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19838430A1 (en) * 1998-08-24 2000-03-09 Fraunhofer Ges Forschung Photodetector array, especially a photodiode array, is produced by forming a common electrode on the radiation incident back face to avoid radiation shadowing by front face wiring of individual electrodes
US20020000562A1 (en) * 2000-04-20 2002-01-03 Carlson Lars S. Fabrication of low leakage-current backside illuminated photodiodes
US20040266052A1 (en) * 2001-08-31 2004-12-30 Eric Pourquier Method for making a color image sensor with pad-to pad soldered supporting substrate
US20050032265A1 (en) * 2001-08-31 2005-02-10 Eric Pourquier Method for making a color image sensor with recessed contact apertures prior to thinning
US20030209652A1 (en) * 2002-05-10 2003-11-13 Hamamatsu Photonics K.K. Back illuminated photodiode array and method of manufacturing the same

Also Published As

Publication number Publication date
FR2887076A1 (en) 2006-12-15
FR2887076B1 (en) 2007-08-31
WO2006131427A2 (en) 2006-12-14

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