WO2006053218A2 - Pressure control system in a photovoltaic substrate deposition - Google Patents
Pressure control system in a photovoltaic substrate deposition Download PDFInfo
- Publication number
- WO2006053218A2 WO2006053218A2 PCT/US2005/040932 US2005040932W WO2006053218A2 WO 2006053218 A2 WO2006053218 A2 WO 2006053218A2 US 2005040932 W US2005040932 W US 2005040932W WO 2006053218 A2 WO2006053218 A2 WO 2006053218A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reaction chamber
- isolation zone
- reaction
- substrate
- isolation
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 230000008021 deposition Effects 0.000 title claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 24
- 238000005086 pumping Methods 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 7
- 230000004941 influx Effects 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 5
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 238000012806 monitoring device Methods 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 238000012864 cross contamination Methods 0.000 abstract description 9
- 238000012546 transfer Methods 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- This invention relates to the production of photovoltaic cells and more specifically to a pressure control and isolation system for the uninterrupted transfer of a photovoltaic work piece from one reaction chamber to another.
- PV Photovoltaic
- PV cells offer an alternative to non-renewable energy sources.
- relatively efficient PV cells can be manufactured in the laboratory, it has proven difficult to enlarge the process to a commercial scale with consistent repeatability and efficiency critical for commercial viability.
- the lack of an efficient thin-film manufacturing process has contributed to the failure of PV cells to effectively replace alternate energy sources in the market.
- a typical process consists of a series of individual batch processing chambers each specifically designed for the formation of various layers in the cell.
- One drawback to this process is that the substrate is transferred from vacuum to air and back to vacuum several times.
- An alternate system uses a series of individual batch processing chambers coupled with a roll-to-roll continuous process for each chamber. The major drawback in this process is the discontinuity of the system and the need to break vacuum.
- One aspect of a PV cell manufacturing apparatus must be that a product piece, or substrate, will be able to travel from one reaction chamber to another reaction chamber without the loss of vacuum. Also, while enabling the substrate to travel between two reaction chambers, the apparatus must not allow reactants in one reaction chamber to contaminate another reaction chamber. This concern is not trivial because the chemical composition of a p-type absorber is so similar to the chemical composition to the n-type junction in a PV cell, that even a very low level of cross contamination between two reaction chambers could have very significant effects of cell performance. Therefore, a manufacturing apparatus with the ability to prevent cross contamination between two reaction chambers is required.
- ROCHDOCS ⁇ 397586 ⁇ 1 - 2 - than the deposition compartments does not contemplate the use of a pure gas in concert with a differential pumping arrangement to control the pressure in a reaction chamber.
- this invention does not teach the construction of an orifice that will restrict flow .of gas from a reaction chamber to an isolation zone.
- Coleman teach a continuous manufacturing process.
- U.S. Patent 5,343,012 to Hardy discloses a method for controlling the temperature of a substrate upon which a thin film structure is to be fabricated.
- this invention does not disclose the transporting of a substrate from one deposition chamber to a second deposition chamber.
- U.S. Patent 6,554,950 to van Mast discloses a method and apparatus for removal of surface contaminants from substrates in vacuum applications.
- this invention does not disclose either the use of differential pumping to control pressure in a reaction chamber, nor does it disclose the use of differential pumping to transfer a substrate from one reaction chamber to a second reaction chamber.
- U.S. Patent 6,270,861 issued to Mashburn on Aug. 7, 2001 discloses an apparatus for forming thin films in a deposition chamber where differential pumping is used to prevent the interaction of two distinct atmospheres.
- this invention does not contemplate the concept of a vacuum barrier existing between two reaction chambers each of a pressure higher than the barrier.
- U.S. Patent 5,849,162 to Bartolomei discloses a device and process for a more effective sputtering process. While the apparatus utilizes differential pumping and a plurality of stations wherein a substrate may have a layer deposited upon it, the invention does not use isolation zones necessary to form reaction chambers each of independent temperature and pressure.
- U.S. Patent 4,851,095 to Scobey discloses a deposition apparatus for a continuous substrate through a plurality of reaction stations.
- the invention does not contemplate the need for different pressures and temperatures for each reaction chamber nor a vacuum isolation zone between them.
- This invention is an apparatus for the production of photovoltaic (PV) cells with at least one differential pumping mechanism that provides a vacuum isolation zone in communication with at least one reaction chamber and where the reaction chamber contains a mechanism for controlling the influx of a pure gas to the reaction chamber.
- the isolation zone is placed between two sequential reaction chambers, but this is not a necessary condition of the invention.
- Acting in concert with the differential pumping mechanism is an instrument for controlling the influx of a pure gas into the connected reaction chamber thereby maintaining a near vacuum in that reaction chamber, but the pressure in the isolation zone is always lower than the reaction chamber.
- an orifice at the isolation zone/reaction chamber interface that is sufficiently large enough to allow the substrate to pass from chamber to chamber without interrupting the process while, at the same time, minimize the flow of gas from the reaction chamber into the isolation zone.
- These orifices are roughly the same size as the pallet that proceeds through them, but slightly larger to account for imprecision of the pallet placement and potential thermal expansion.
- This invention further comprises a method for pressure control in a plurality of independent deposition and reaction chambers comprising controlling the influx of a gas into the reaction chambers, feeding a substrate through orifices at the inlet and outlet of the reaction chambers, establishing an isolation zone of lower pressure adjacent to and in communication with the reaction chambers and removing the gas exiting the reaction chamber to prevent cross contamination into an adjacent reaction chamber.
- the advantage of this apparatus is the isolation of the reaction chambers to prevent cross contamination while, at the same time, it allows a substrate to pass uninterrupted from one chamber to another.
- a pallet or number of pallets may exit one reaction chamber and be temporary situated in an isolation zone while minimizing adverse effects to the substrate and then enter the next subsequent reaction chamber at some later time.
- the pallets may be organized in a train like fashion such that all reaction chambers are operational simultaneously on different pallets.
- This invention also makes possible a continuous, or "roll-to-roll", substrate design moving continuously through a series of reaction chambers, each separated by a pressure controlled isolation zone.
- a differential pump or a series of differential pumps, is attached to the isolation zone. This pump may continuously run or be cycled to maintain a vacuum, while the addition of inert gas to the reaction chamber gives that chamber some pressure greater than a complete vacuum as necessary for the reaction.
- the pressure and temperature may be monitored by an array of sensors and analyzed by a controlling device, such as a computer, which may autonomously control the environmental characteristics of the reaction chambers.
- One object of this invention is to provide a pressure isolation apparatus for allowing a substrate to pass through a series of reaction chambers, each of which deposits a thin chemical layer for the production of a photovoltaic cell while substantially maintaining the deposition and/or reaction conditions necessary in each reaction chamber.
- Another object of this invention enables the transfer a substrate from one reaction chamber to the next subsequent chamber, or to the outside atmosphere, without subjecting the substrate to large temperature and pressure changes during the transfer.
- a third object of the present invention is to transfer a substrate from a reaction chamber to the next subsequent reaction chamber without allowing cross contamination between the two reaction chambers.
- FIG. 1 is a schematic diagram of a single isolation zone between two reaction chambers
- FIG. Ia is a diagram of a vacuum pump apparatus with an associated collection facility
- FIG. 2 is a perspective view of one potential embodiment showing the possible shape of the isolation zone
- FIG. 3 is a schematic diagram of a single isolation zone with the vacuum pump apparatus installed internally in the isolation zone;
- FIG. 4 is schematic diagram of a single isolation zone connected to a single reaction chamber and a removal area for completed substrates.
- FIG. 1 An embodiment of the current invention is depicted in FIG. 1 and comprises an enclosed isolation zone 100 that is attached to at least one reaction chamber 102 but, in most cases, the enclosed isolation zone 100 is attached between two reaction chambers 102.
- the physical shape of the isolation zone 100 may be any shape, such as cube or rectangular, and may be determined by the size of the pallet, work piece, or other substrate transportation device 104. Obviously, the shape of the isolation zone 100 may be driven by optimizing performance in a vacuum, therefore a cylindrical, as depicted in FIG. 2, or spherical shape may be necessary to support drawing a vacuum in the area of 10 "7 torr.
- the size of the enclosed isolation zone 100 may also be determined by the reaction requirements of the photovoltaic production process.
- a reaction chamber 102 On at least one end of the isolation zone is a reaction chamber 102, which includes an apparatus 106 for the deposition of a chemical or alloy on a substrate. Common methods for the deposition include evaporation, sputtering and other techniques known to those skilled in the art. Regardless of the deposition method, it is considered likely that the pressures in the reaction chambers will be exceedingly low, typically in the range of 10 "6 - 10 "3 torr.
- the isolation zone 100 is accompanied by a pump 108 whereby the suction side 110 of this pump is attached to the isolation zone wall 111 by a connecting device 112, or may be permanently attached to the isolation zone wall 111 which will enable the pressure of the isolation zone to be continuously less than the pressures of the adjacent reaction chambers 102, approximately 10 "7 torr.
- the pump 108 may be installed internally within the isolation zone 100 with the pump discharge 114 being connected to the isolation zone wall 111 from the inside. It is also contemplated that a number of pumps 108 in series may be necessary to achieve sufficient vacuum. None in this invention precludes the use of a single differential pump for a plurality of isolation zones; however this may likely cause a different ⁇ P across each reaction chamber/isolation zone interface 116, which may be undesirable.
- an orifice is placed on both inlet 117 and outlet 118 of the isolation zone 100 at the reaction chamber/isolation zone interface 115, 116.
- the differential pump 108 would evacuate both the isolation zone 100 as well as the reaction chambers 102, 103 to an equally low vacuum.
- the reaction chambers 102, 103 must be "pressurized" by an external pressure source to counter the vacuuming effect of the pump 108. In one embodiment, this is achieved through the introduction of a pure gas 125, 126, such as argon, nitrogen, or oxygen, into the reaction chambers 102, 103 via a gas inlet 134, 135.
- a pure gas 125, 126 such as argon, nitrogen, or oxygen
- FIG. 1 displays a pure gas storage tank 123, 124 attached to each gas inlet 134, 135.
- This embodiment reflects the possibility that the processes occurring in two different reaction chambers may require the pure gas in one reaction chamber 125 to be different from the pure gas 126 in another reaction chamber for optimal photovoltaic results.
- this invention does not preclude the use of a single pure gas tank to be used for all reaction chambers.
- gases may also be used for pressure control, but this may depend upon factors such as the process in- the reaction chamber, the potential for contamination of the substrate and the required pressure and temperature of the process.
- a collection tank 150 may be attached to the outlet of the pump 114 to collect the pure gas for later use or proper disposal.
- the orifice 117, 118 In order to maintain a pressure in the reaction chamber 102, 103 that is greater than the isolation zone 100, the orifice 117, 118 must be able to limit the loss of pure gas 125, 126 in the reaction chamber 102, 103 to the isolation zone 100 due to the differential pressure across the isolation zone/reaction chamber boundaries 115, 116.
- the orifice must therefore be limited in size and configuration to limit this loss.
- FIG. 1 represents only a segment of what may be a large deposition apparatus, an orifice 119 is also attached to the inlet and outlet of each reaction chamber.
- the orifice is only marginally larger than the substrate 104 itself.
- the operation of the orifice in a "roll-to-roll” process would be most effective since the substrate itself would continuously inhibit the outward flow of gas from the reaction chamber to the isolation zone.
- the orifice 117, 118 is opened only when the pallet 104 enters or leaves a reaction chamber to totally prevent the loss of gas and subsequent depressurization.
- temperature and pressure sensors 127, 128 are placed in the reaction chambers and are in electrical communication, as represented by dashed line 132 with a controlling device 130, which may be a computer, and continuously monitor reaction chamber temperature and pressure.
- the controlling 130 device compares these values with the temperature and pressure of the isolation zone 100, which is also measured by a sensor 129 that is in electrical communication, as represented by dashed line 136 with the controlling device 130.
- the controlling device 130 may control either the flow rate of the pure gas 125, 126 into the reaction chambers through the electrical control of solenoid or throttle valves 131, 133 which are located between the pure gas inlets 134, 135 and the pure gas storage tanks 123, 124.
- ⁇ P may be controlled through the control of the vacuum pump 108 instead of pure gas flow rate, or some combination of pump and pure gas flow rate control.
- isolation zones need not solely exist between two reaction chambers.
- isolation zones may be only in communication with one reaction chamber in order to prevent contamination between a reaction chamber and the outside atmosphere as depicted in FIG. 4.
- an isolation zone 100 serves as a terminus where the substrate 104 is either complete or must be transferred to another apparatus for further development.
- an access point 401 is provided for substrate 104 removal.
- An isolation chamber such as this would be ideal for prevention of impurities in the air reaching into the reaction chamber, which will likely be at or near vacuum levels.
- the ⁇ P across this isolation zone is much more significant than the ⁇ P across any reaction chamber/isolation zone interface.
- the ⁇ P between the atmosphere and an isolation zone may be 1000 times greater than the ⁇ P between an isolation zone and a reaction chamber. Because of this large ⁇ P, a simple access point 401 between the isolation zone and the outside atmosphere may be insufficient. Therefore, the access point may not be continuously open like the other orifices.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05851547A EP1809787A2 (en) | 2004-11-10 | 2005-11-10 | Pressure control system in a photovoltaic substrate deposition |
CA002586969A CA2586969A1 (en) | 2004-11-10 | 2005-11-10 | Pressure control system in a photovoltaic substrate deposition |
JP2007541349A JP2008520107A (en) | 2004-11-10 | 2005-11-10 | Pressure control system in photovoltaic substrate deposition equipment |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62684304P | 2004-11-10 | 2004-11-10 | |
US60/626,843 | 2004-11-10 | ||
US11/272,536 | 2005-11-10 | ||
US11/272,536 US20060096536A1 (en) | 2004-11-10 | 2005-11-10 | Pressure control system in a photovoltaic substrate deposition apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2006053218A2 true WO2006053218A2 (en) | 2006-05-18 |
WO2006053218A8 WO2006053218A8 (en) | 2007-10-18 |
WO2006053218A3 WO2006053218A3 (en) | 2007-11-29 |
Family
ID=36315036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/040932 WO2006053218A2 (en) | 2004-11-10 | 2005-11-10 | Pressure control system in a photovoltaic substrate deposition |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060096536A1 (en) |
WO (1) | WO2006053218A2 (en) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101087899A (en) * | 2004-11-10 | 2007-12-12 | 德斯塔尔科技公司 | Vertical production of photovoltaic devices |
US9105776B2 (en) * | 2006-05-15 | 2015-08-11 | Stion Corporation | Method and structure for thin film photovoltaic materials using semiconductor materials |
US8017860B2 (en) * | 2006-05-15 | 2011-09-13 | Stion Corporation | Method and structure for thin film photovoltaic materials using bulk semiconductor materials |
US20080300918A1 (en) * | 2007-05-29 | 2008-12-04 | Commercenet Consortium, Inc. | System and method for facilitating hospital scheduling and support |
US8071179B2 (en) | 2007-06-29 | 2011-12-06 | Stion Corporation | Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials |
US7919400B2 (en) * | 2007-07-10 | 2011-04-05 | Stion Corporation | Methods for doping nanostructured materials and nanostructured thin films |
US8058092B2 (en) | 2007-09-28 | 2011-11-15 | Stion Corporation | Method and material for processing iron disilicide for photovoltaic application |
US20090087939A1 (en) * | 2007-09-28 | 2009-04-02 | Stion Corporation | Column structure thin film material using metal oxide bearing semiconductor material for solar cell devices |
US8614396B2 (en) * | 2007-09-28 | 2013-12-24 | Stion Corporation | Method and material for purifying iron disilicide for photovoltaic application |
US8287942B1 (en) | 2007-09-28 | 2012-10-16 | Stion Corporation | Method for manufacture of semiconductor bearing thin film material |
US8759671B2 (en) * | 2007-09-28 | 2014-06-24 | Stion Corporation | Thin film metal oxide bearing semiconductor material for single junction solar cell devices |
US7998762B1 (en) | 2007-11-14 | 2011-08-16 | Stion Corporation | Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration |
CN101946021B (en) * | 2008-02-20 | 2012-06-20 | 松下电器产业株式会社 | Thin film forming apparatus and thin film forming method |
US8642138B2 (en) | 2008-06-11 | 2014-02-04 | Stion Corporation | Processing method for cleaning sulfur entities of contact regions |
US8003432B2 (en) | 2008-06-25 | 2011-08-23 | Stion Corporation | Consumable adhesive layer for thin film photovoltaic material |
US9087943B2 (en) * | 2008-06-25 | 2015-07-21 | Stion Corporation | High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material |
US7855089B2 (en) | 2008-09-10 | 2010-12-21 | Stion Corporation | Application specific solar cell and method for manufacture using thin film photovoltaic materials |
US8394662B1 (en) | 2008-09-29 | 2013-03-12 | Stion Corporation | Chloride species surface treatment of thin film photovoltaic cell and manufacturing method |
US8008110B1 (en) | 2008-09-29 | 2011-08-30 | Stion Corporation | Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method |
US8236597B1 (en) | 2008-09-29 | 2012-08-07 | Stion Corporation | Bulk metal species treatment of thin film photovoltaic cell and manufacturing method |
US8008112B1 (en) | 2008-09-29 | 2011-08-30 | Stion Corporation | Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method |
US8026122B1 (en) | 2008-09-29 | 2011-09-27 | Stion Corporation | Metal species surface treatment of thin film photovoltaic cell and manufacturing method |
US8476104B1 (en) | 2008-09-29 | 2013-07-02 | Stion Corporation | Sodium species surface treatment of thin film photovoltaic cell and manufacturing method |
US8501521B1 (en) | 2008-09-29 | 2013-08-06 | Stion Corporation | Copper species surface treatment of thin film photovoltaic cell and manufacturing method |
US7910399B1 (en) | 2008-09-30 | 2011-03-22 | Stion Corporation | Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates |
US8425739B1 (en) | 2008-09-30 | 2013-04-23 | Stion Corporation | In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials |
US7947524B2 (en) | 2008-09-30 | 2011-05-24 | Stion Corporation | Humidity control and method for thin film photovoltaic materials |
JP4486146B2 (en) * | 2008-09-30 | 2010-06-23 | 積水化学工業株式会社 | Surface treatment equipment |
US8217261B2 (en) * | 2008-09-30 | 2012-07-10 | Stion Corporation | Thin film sodium species barrier method and structure for cigs based thin film photovoltaic cell |
US7863074B2 (en) | 2008-09-30 | 2011-01-04 | Stion Corporation | Patterning electrode materials free from berm structures for thin film photovoltaic cells |
US8383450B2 (en) | 2008-09-30 | 2013-02-26 | Stion Corporation | Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials |
US8741689B2 (en) | 2008-10-01 | 2014-06-03 | Stion Corporation | Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials |
US20110018103A1 (en) | 2008-10-02 | 2011-01-27 | Stion Corporation | System and method for transferring substrates in large scale processing of cigs and/or cis devices |
US8435826B1 (en) | 2008-10-06 | 2013-05-07 | Stion Corporation | Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method |
US8003430B1 (en) | 2008-10-06 | 2011-08-23 | Stion Corporation | Sulfide species treatment of thin film photovoltaic cell and manufacturing method |
USD625695S1 (en) | 2008-10-14 | 2010-10-19 | Stion Corporation | Patterned thin film photovoltaic module |
US8168463B2 (en) | 2008-10-17 | 2012-05-01 | Stion Corporation | Zinc oxide film method and structure for CIGS cell |
US8344243B2 (en) * | 2008-11-20 | 2013-01-01 | Stion Corporation | Method and structure for thin film photovoltaic cell using similar material junction |
USD662040S1 (en) | 2009-06-12 | 2012-06-19 | Stion Corporation | Pin striped thin film solar module for garden lamp |
USD628332S1 (en) | 2009-06-12 | 2010-11-30 | Stion Corporation | Pin striped thin film solar module for street lamp |
USD632415S1 (en) | 2009-06-13 | 2011-02-08 | Stion Corporation | Pin striped thin film solar module for cluster lamp |
USD652262S1 (en) | 2009-06-23 | 2012-01-17 | Stion Corporation | Pin striped thin film solar module for cooler |
USD662041S1 (en) | 2009-06-23 | 2012-06-19 | Stion Corporation | Pin striped thin film solar module for laptop personal computer |
US8507786B1 (en) | 2009-06-27 | 2013-08-13 | Stion Corporation | Manufacturing method for patterning CIGS/CIS solar cells |
USD627696S1 (en) | 2009-07-01 | 2010-11-23 | Stion Corporation | Pin striped thin film solar module for recreational vehicle |
US8398772B1 (en) | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
US8809096B1 (en) | 2009-10-22 | 2014-08-19 | Stion Corporation | Bell jar extraction tool method and apparatus for thin film photovoltaic materials |
US8859880B2 (en) | 2010-01-22 | 2014-10-14 | Stion Corporation | Method and structure for tiling industrial thin-film solar devices |
US8263494B2 (en) | 2010-01-25 | 2012-09-11 | Stion Corporation | Method for improved patterning accuracy for thin film photovoltaic panels |
US9096930B2 (en) | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
CN101877372B (en) * | 2010-05-20 | 2012-07-25 | 深圳市创益科技发展有限公司 | Back electrode film of thin film solar cell |
US8461061B2 (en) | 2010-07-23 | 2013-06-11 | Stion Corporation | Quartz boat method and apparatus for thin film thermal treatment |
US8628997B2 (en) | 2010-10-01 | 2014-01-14 | Stion Corporation | Method and device for cadmium-free solar cells |
TWI574341B (en) * | 2010-12-29 | 2017-03-11 | 歐瑞康先進科技股份有限公司 | Vacuum treatment apparatus and a method for manufacturing |
US8998606B2 (en) | 2011-01-14 | 2015-04-07 | Stion Corporation | Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices |
US8728200B1 (en) | 2011-01-14 | 2014-05-20 | Stion Corporation | Method and system for recycling processing gas for selenization of thin film photovoltaic materials |
US8436445B2 (en) | 2011-08-15 | 2013-05-07 | Stion Corporation | Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices |
TWI453295B (en) * | 2012-10-12 | 2014-09-21 | Iner Aec Executive Yuan | Gas isolation chamber and plasma deposition apparatus thereof |
US20140326182A1 (en) * | 2013-05-03 | 2014-11-06 | Areesys Corporation | Continuous Substrate Processing Apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5514217A (en) * | 1990-11-16 | 1996-05-07 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof |
US6374313B1 (en) * | 1994-09-30 | 2002-04-16 | Cirrus Logic, Inc. | FIFO and method of operating same which inhibits output transitions when the last cell is read or when the FIFO is erased |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5187115A (en) * | 1977-12-05 | 1993-02-16 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers using a dual enclosure apparatus |
US4392451A (en) * | 1980-12-31 | 1983-07-12 | The Boeing Company | Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI2 chalcopyrite compounds |
US4438723A (en) * | 1981-09-28 | 1984-03-27 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
US4492181A (en) * | 1982-03-19 | 1985-01-08 | Sovonics Solar Systems | Apparatus for continuously producing tandem amorphous photovoltaic cells |
US4423701A (en) * | 1982-03-29 | 1984-01-03 | Energy Conversion Devices, Inc. | Glow discharge deposition apparatus including a non-horizontally disposed cathode |
US4462332A (en) * | 1982-04-29 | 1984-07-31 | Energy Conversion Devices, Inc. | Magnetic gas gate |
US4440107A (en) * | 1982-07-12 | 1984-04-03 | Energy Conversion Devices, Inc. | Magnetic apparatus for reducing substrate warpage |
US4438724A (en) * | 1982-08-13 | 1984-03-27 | Energy Conversion Devices, Inc. | Grooved gas gate |
US4450786A (en) * | 1982-08-13 | 1984-05-29 | Energy Conversion Devices, Inc. | Grooved gas gate |
US4462333A (en) * | 1982-10-27 | 1984-07-31 | Energy Conversion Devices, Inc. | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus |
US4520757A (en) * | 1982-10-27 | 1985-06-04 | Energy Conversion Devices, Inc. | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus |
US4483883A (en) * | 1982-12-22 | 1984-11-20 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
US4479455A (en) * | 1983-03-14 | 1984-10-30 | Energy Conversion Devices, Inc. | Process gas introduction and channeling system to produce a profiled semiconductor layer |
US4480585A (en) * | 1983-06-23 | 1984-11-06 | Energy Conversion Devices, Inc. | External isolation module |
US4576830A (en) * | 1984-11-05 | 1986-03-18 | Chronar Corp. | Deposition of materials |
US4663828A (en) * | 1985-10-11 | 1987-05-12 | Energy Conversion Devices, Inc. | Process and apparatus for continuous production of lightweight arrays of photovoltaic cells |
US4663829A (en) * | 1985-10-11 | 1987-05-12 | Energy Conversion Devices, Inc. | Process and apparatus for continuous production of lightweight arrays of photovoltaic cells |
US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
US4889609A (en) * | 1988-09-06 | 1989-12-26 | Ovonic Imaging Systems, Inc. | Continuous dry etching system |
US5090356A (en) * | 1991-06-28 | 1992-02-25 | United Solar Systems Corporation | Chemically active isolation passageway for deposition chambers |
US5919310A (en) * | 1991-10-07 | 1999-07-06 | Canon Kabushiki Kaisha | Continuously film-forming apparatus provided with improved gas gate means |
US5374313A (en) * | 1992-06-24 | 1994-12-20 | Energy Conversion Devices, Inc. | Magnetic roller gas gate employing transonic sweep gas flow to isolate regions of differing gaseous composition or pressure |
US5343012A (en) * | 1992-10-06 | 1994-08-30 | Hardy Walter N | Differentially pumped temperature controller for low pressure thin film fabrication process |
US5411592A (en) * | 1994-06-06 | 1995-05-02 | Ovonic Battery Company, Inc. | Apparatus for deposition of thin-film, solid state batteries |
US6270861B1 (en) * | 1994-07-21 | 2001-08-07 | Ut, Battelle Llc | Individually controlled environments for pulsed addition and crystallization |
US5849162A (en) * | 1995-04-25 | 1998-12-15 | Deposition Sciences, Inc. | Sputtering device and method for reactive for reactive sputtering |
US6395563B1 (en) * | 1998-12-28 | 2002-05-28 | Matsushita Electric Industrial Co., Ltd. | Device for manufacturing semiconductor device and method of manufacturing the same |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
US6323417B1 (en) * | 1998-09-29 | 2001-11-27 | Lockheed Martin Corporation | Method of making I-III-VI semiconductor materials for use in photovoltaic cells |
US6214120B1 (en) * | 1999-08-27 | 2001-04-10 | Innovac Corporation | High throughput multi-vacuum chamber system for processing wafers and method of processing wafers using the same |
US6554950B2 (en) * | 2001-01-16 | 2003-04-29 | Applied Materials, Inc. | Method and apparatus for removal of surface contaminants from substrates in vacuum applications |
US6881647B2 (en) * | 2001-09-20 | 2005-04-19 | Heliovolt Corporation | Synthesis of layers, coatings or films using templates |
AU2003275239A1 (en) * | 2002-09-30 | 2004-04-23 | Miasole | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US20050056863A1 (en) * | 2003-09-17 | 2005-03-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell |
US7368368B2 (en) * | 2004-08-18 | 2008-05-06 | Cree, Inc. | Multi-chamber MOCVD growth apparatus for high performance/high throughput |
-
2005
- 2005-11-10 WO PCT/US2005/040932 patent/WO2006053218A2/en active Application Filing
- 2005-11-10 US US11/272,536 patent/US20060096536A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5514217A (en) * | 1990-11-16 | 1996-05-07 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof |
US6374313B1 (en) * | 1994-09-30 | 2002-04-16 | Cirrus Logic, Inc. | FIFO and method of operating same which inhibits output transitions when the last cell is read or when the FIFO is erased |
Also Published As
Publication number | Publication date |
---|---|
WO2006053218A3 (en) | 2007-11-29 |
WO2006053218A8 (en) | 2007-10-18 |
US20060096536A1 (en) | 2006-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20060096536A1 (en) | Pressure control system in a photovoltaic substrate deposition apparatus | |
CN101233260A (en) | Pressure control system in a photovoltaic substrate deposition | |
CN104040732A (en) | Advanced platform for passivating crystalline silicon solar cells | |
KR100430021B1 (en) | Deposited film forming apparatus | |
CN101767717A (en) | Method for transferring a substrate to two or more process modules | |
CA2688522A1 (en) | Treatment system for flat substrates | |
JPH09307128A (en) | Manufacturing equipment and method of thin film photoelectric transducer | |
CN104795463B (en) | PECVD device for producing heterojunction solar cells and working method of device | |
CN101851748A (en) | Full-automatic large panel PECVD silicon nitride tectorial membrane preparation system | |
CN102180447A (en) | System and process for recovery of cadmium telluride (CdTe) | |
US20090060687A1 (en) | Transfer chamber with rolling diaphragm | |
CN101990585A (en) | Film formation apparatus | |
EP1809787A2 (en) | Pressure control system in a photovoltaic substrate deposition | |
CN102108501B (en) | Apparatus and process for continuous vapor deposition of a thin film layer on a sublimated source material | |
US20120017831A1 (en) | Chemical vapor deposition method and system for semiconductor devices | |
CN101755330A (en) | Cluster tool with a linear source | |
CN102064236A (en) | Manufacture method of thin-film solar cell | |
CN201655831U (en) | Flat-plate PECVD silicon nitride laminating system | |
KR101208020B1 (en) | sputtering system | |
CN201648518U (en) | Plate PECVD silicon nitride covering film system | |
KR20110009554A (en) | Sputtering system | |
CN100380592C (en) | Thin film forming apparatus and thin film forming method and thin film forming system | |
Thornton et al. | In-line sputtering system for depositing CuInSe2/CdS heterojunctions | |
US8869967B2 (en) | Dynamic load lock with cellular structure for discrete substrates | |
JPS5850733A (en) | Mass-production apparatus of thin film for solar cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200580043391.4 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005851547 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2586969 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007541349 Country of ref document: JP |
|
WWP | Wipo information: published in national office |
Ref document number: 2005851547 Country of ref document: EP |