WO2006053127A8 - Process and photovoltaic device using an akali-containing layer - Google Patents

Process and photovoltaic device using an akali-containing layer

Info

Publication number
WO2006053127A8
WO2006053127A8 PCT/US2005/040742 US2005040742W WO2006053127A8 WO 2006053127 A8 WO2006053127 A8 WO 2006053127A8 US 2005040742 W US2005040742 W US 2005040742W WO 2006053127 A8 WO2006053127 A8 WO 2006053127A8
Authority
WO
WIPO (PCT)
Prior art keywords
photovoltaic device
akali
containing layer
developing
alkali
Prior art date
Application number
PCT/US2005/040742
Other languages
French (fr)
Other versions
WO2006053127A2 (en
WO2006053127A3 (en
Inventor
John R Tuttle
Original Assignee
Daystar Technologies Inc
John R Tuttle
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daystar Technologies Inc, John R Tuttle filed Critical Daystar Technologies Inc
Priority to EP05818871A priority Critical patent/EP1836736A2/en
Priority to CA002586963A priority patent/CA2586963A1/en
Priority to JP2007541317A priority patent/JP2008520102A/en
Publication of WO2006053127A2 publication Critical patent/WO2006053127A2/en
Publication of WO2006053127A8 publication Critical patent/WO2006053127A8/en
Publication of WO2006053127A3 publication Critical patent/WO2006053127A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Abstract

This invention describes the product and method of developing a photovoltaic device using an alkali-containing mixed phase semiconductor source layer to enhance cell efficiency and minimize molecular structure defects.
PCT/US2005/040742 2004-11-10 2005-11-10 Process and photovoltaic device using an akali-containing layer WO2006053127A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP05818871A EP1836736A2 (en) 2004-11-10 2005-11-10 Process and photovoltaic device using an akali-containing layer
CA002586963A CA2586963A1 (en) 2004-11-10 2005-11-10 Process and photovoltaic device using an akali-containing layer
JP2007541317A JP2008520102A (en) 2004-11-10 2005-11-10 Method and photovoltaic device using alkali-containing layer

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US62684304P 2004-11-10 2004-11-10
US60/626,843 2004-11-10
US11/272,185 US20060219288A1 (en) 2004-11-10 2005-11-10 Process and photovoltaic device using an akali-containing layer
US11/272,185 2005-11-10

Publications (3)

Publication Number Publication Date
WO2006053127A2 WO2006053127A2 (en) 2006-05-18
WO2006053127A8 true WO2006053127A8 (en) 2008-04-10
WO2006053127A3 WO2006053127A3 (en) 2009-04-09

Family

ID=36337214

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/040742 WO2006053127A2 (en) 2004-11-10 2005-11-10 Process and photovoltaic device using an akali-containing layer

Country Status (5)

Country Link
US (1) US20060219288A1 (en)
EP (1) EP1836736A2 (en)
JP (1) JP2008520102A (en)
CA (1) CA2586963A1 (en)
WO (1) WO2006053127A2 (en)

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Also Published As

Publication number Publication date
WO2006053127A2 (en) 2006-05-18
EP1836736A2 (en) 2007-09-26
JP2008520102A (en) 2008-06-12
CA2586963A1 (en) 2006-05-18
WO2006053127A3 (en) 2009-04-09
US20060219288A1 (en) 2006-10-05

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