WO2006017847A3 - Silicon-insulator thin-film structures for optical modulators and methods of manufacture - Google Patents

Silicon-insulator thin-film structures for optical modulators and methods of manufacture Download PDF

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Publication number
WO2006017847A3
WO2006017847A3 PCT/US2005/028391 US2005028391W WO2006017847A3 WO 2006017847 A3 WO2006017847 A3 WO 2006017847A3 US 2005028391 W US2005028391 W US 2005028391W WO 2006017847 A3 WO2006017847 A3 WO 2006017847A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
optical modulators
manufacture
methods
film structures
Prior art date
Application number
PCT/US2005/028391
Other languages
French (fr)
Other versions
WO2006017847A2 (en
Inventor
Thomas Keyser
Bradley J Larsen
Cheisan J Yue
Original Assignee
Honeywell Int Inc
Thomas Keyser
Bradley J Larsen
Cheisan J Yue
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc, Thomas Keyser, Bradley J Larsen, Cheisan J Yue filed Critical Honeywell Int Inc
Priority to EP05810130A priority Critical patent/EP1779190A2/en
Publication of WO2006017847A2 publication Critical patent/WO2006017847A2/en
Publication of WO2006017847A3 publication Critical patent/WO2006017847A3/en
Priority to IL181259A priority patent/IL181259A0/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure

Abstract

The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer (18), such as silicon dioxide, sandwiched between silicon layers (16, 20). The silicon layers (16, 20) have high free carrier mobility. In one aspect of the invention a high mobility silicon layer (20) can be provided by crystallizing an amorphous silicon layer. In another aspect of the invention, a high mobility silicon layer (20) can be provided by using selective epitaxial growth and extended lateral overgrowth thereof.
PCT/US2005/028391 2004-08-10 2005-08-10 Silicon-insulator thin-film structures for optical modulators and methods of manufacture WO2006017847A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05810130A EP1779190A2 (en) 2004-08-10 2005-08-10 Silicon-insulator thin-film structures for optical modulators and methods of manufacture
IL181259A IL181259A0 (en) 2004-08-10 2007-02-11 Silicon-insulator thin-film structures for optical modulators and methods of manufacture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/915,299 US7177489B2 (en) 2004-03-18 2004-08-10 Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture
US10/915,299 2004-08-10

Publications (2)

Publication Number Publication Date
WO2006017847A2 WO2006017847A2 (en) 2006-02-16
WO2006017847A3 true WO2006017847A3 (en) 2006-05-18

Family

ID=35709159

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/028391 WO2006017847A2 (en) 2004-08-10 2005-08-10 Silicon-insulator thin-film structures for optical modulators and methods of manufacture

Country Status (4)

Country Link
US (1) US7177489B2 (en)
EP (1) EP1779190A2 (en)
IL (1) IL181259A0 (en)
WO (1) WO2006017847A2 (en)

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US8450186B2 (en) * 2009-09-25 2013-05-28 Intel Corporation Optical modulator utilizing wafer bonding technology
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Also Published As

Publication number Publication date
EP1779190A2 (en) 2007-05-02
US20050207691A1 (en) 2005-09-22
IL181259A0 (en) 2007-07-04
US7177489B2 (en) 2007-02-13
WO2006017847A2 (en) 2006-02-16

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