WO2005122285A3 - Methods and devices for fabricating and assembling printable semiconductor elements - Google Patents

Methods and devices for fabricating and assembling printable semiconductor elements Download PDF

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Publication number
WO2005122285A3
WO2005122285A3 PCT/US2005/019354 US2005019354W WO2005122285A3 WO 2005122285 A3 WO2005122285 A3 WO 2005122285A3 US 2005019354 W US2005019354 W US 2005019354W WO 2005122285 A3 WO2005122285 A3 WO 2005122285A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor elements
devices
fabricating
printable semiconductor
methods
Prior art date
Application number
PCT/US2005/019354
Other languages
French (fr)
Other versions
WO2005122285A2 (en
Inventor
Ralph G Nuzzo
John A Rogers
Etienne Menard
Keon Jae Lee
Dahl-Young Khang
Yugang Sun
Matthew Meitl
Zhengtao Zhu
Original Assignee
Univ Illinois
Ralph G Nuzzo
John A Rogers
Etienne Menard
Keon Jae Lee
Dahl-Young Khang
Yugang Sun
Matthew Meitl
Zhengtao Zhu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Illinois, Ralph G Nuzzo, John A Rogers, Etienne Menard, Keon Jae Lee, Dahl-Young Khang, Yugang Sun, Matthew Meitl, Zhengtao Zhu filed Critical Univ Illinois
Priority to KR1020127030789A priority Critical patent/KR101368748B1/en
Priority to JP2007515549A priority patent/JP2008502151A/en
Priority to KR1020157017151A priority patent/KR101746412B1/en
Priority to CN2005800181595A priority patent/CN101120433B/en
Priority to KR1020127010094A priority patent/KR101260981B1/en
Priority to KR1020077000216A priority patent/KR101307481B1/en
Priority to EP05755193.9A priority patent/EP1759422B1/en
Priority to KR1020137022416A priority patent/KR101429098B1/en
Priority to EP13003426.7A priority patent/EP2650905B1/en
Priority to KR1020137034843A priority patent/KR101572992B1/en
Priority to KR1020137022417A priority patent/KR101504579B1/en
Publication of WO2005122285A2 publication Critical patent/WO2005122285A2/en
Priority to EP15163216.3A priority patent/EP2937896B1/en
Priority to TW095119520A priority patent/TWI427802B/en
Priority to CN201110077508.8A priority patent/CN102176465B/en
Priority to EP22164385.1A priority patent/EP4040474A1/en
Priority to KR1020087000080A priority patent/KR101269566B1/en
Priority to MYPI20062536A priority patent/MY145225A/en
Priority to PCT/US2006/021161 priority patent/WO2006130721A2/en
Priority to CN2006800196400A priority patent/CN101632156B/en
Priority to MYPI20113695 priority patent/MY152238A/en
Priority to KR1020127032629A priority patent/KR101308548B1/en
Priority to JP2008514820A priority patent/JP5164833B2/en
Priority to TW102142517A priority patent/TWI533459B/en
Priority to TW095119788A priority patent/TWI420237B/en
Priority to EP20060771761 priority patent/EP1915774B1/en
Priority to KR1020137011761A priority patent/KR101347687B1/en
Priority to MYPI20062537 priority patent/MY151572A/en
Priority to JP2006154975A priority patent/JP5297581B2/en
Priority to KR1020060050058A priority patent/KR100798431B1/en
Priority to IL179784A priority patent/IL179784A0/en
Publication of WO2005122285A3 publication Critical patent/WO2005122285A3/en
Priority to MYPI2013003185A priority patent/MY180515A/en
Priority to JP2012246602A priority patent/JP5734261B2/en
Priority to JP2013095896A priority patent/JP5701331B2/en
Priority to JP2014177486A priority patent/JP6002725B2/en

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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/707—Integrated with dissimilar structures on a common substrate having different types of nanoscale structures or devices on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element

Abstract

The invention provides methods and devices for fabricating printable semiconductor elements (555) and assembling printable semiconductor elements onto substrate surfaces (330). The present invention also provides stretchable semiconductor structures (760).
PCT/US2005/019354 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements WO2005122285A2 (en)

Priority Applications (34)

Application Number Priority Date Filing Date Title
KR1020127030789A KR101368748B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
JP2007515549A JP2008502151A (en) 2004-06-04 2005-06-02 Method and device for manufacturing and assembling printable semiconductor elements
KR1020157017151A KR101746412B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
CN2005800181595A CN101120433B (en) 2004-06-04 2005-06-02 Method for fabricating and assembling printable semiconductor elements
KR1020127010094A KR101260981B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
KR1020077000216A KR101307481B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
EP05755193.9A EP1759422B1 (en) 2004-06-04 2005-06-02 Electrical device comprising printable semiconductor elements
KR1020137022416A KR101429098B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
EP13003426.7A EP2650905B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
KR1020137034843A KR101572992B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
KR1020137022417A KR101504579B1 (en) 2004-06-04 2005-06-02 Methods and devices for fabricating and assembling printable semiconductor elements
MYPI20062537 MY151572A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20062536A MY145225A (en) 2005-06-02 2006-06-01 Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
TW102142517A TWI533459B (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
CN201110077508.8A CN102176465B (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
EP22164385.1A EP4040474A1 (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
KR1020087000080A KR101269566B1 (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
EP15163216.3A EP2937896B1 (en) 2005-06-02 2006-06-01 Method of transfering a printable semiconductor element
PCT/US2006/021161 WO2006130721A2 (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
CN2006800196400A CN101632156B (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
MYPI20113695 MY152238A (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
KR1020127032629A KR101308548B1 (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
JP2008514820A JP5164833B2 (en) 2005-06-02 2006-06-01 Method for manufacturing a printable semiconductor structure
TW095119520A TWI427802B (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
TW095119788A TWI420237B (en) 2005-06-02 2006-06-01 Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
EP20060771761 EP1915774B1 (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
KR1020137011761A KR101347687B1 (en) 2005-06-02 2006-06-01 Printable semiconductor structures and related methods of making and assembling
KR1020060050058A KR100798431B1 (en) 2005-06-02 2006-06-02 Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp
JP2006154975A JP5297581B2 (en) 2005-06-02 2006-06-02 Pattern transfer printing with dynamic control of adhesion to elastomeric stamps
IL179784A IL179784A0 (en) 2004-06-04 2006-12-03 Methods and devices for fabricating and assembling printable semiconductor elements
MYPI2013003185A MY180515A (en) 2005-06-02 2011-08-08 Printable semiconductor structures and related methods of making and assembling
JP2012246602A JP5734261B2 (en) 2005-06-02 2012-11-08 Printable semiconductor structure and related manufacturing and assembly methods
JP2013095896A JP5701331B2 (en) 2005-06-02 2013-04-30 Pattern transfer printing with dynamic control of adhesion to elastomeric stamps
JP2014177486A JP6002725B2 (en) 2005-06-02 2014-09-01 Printable semiconductor structure and related manufacturing and assembly methods

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US57707704P 2004-06-04 2004-06-04
US60/577,077 2004-06-04
US60106104P 2004-08-11 2004-08-11
US60/601,061 2004-08-11
US65030505P 2005-02-04 2005-02-04
US60/650,305 2005-02-04
US66339105P 2005-03-18 2005-03-18
US60/663,391 2005-03-18
US67761705P 2005-05-04 2005-05-04
US60/677,617 2005-05-04

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WO2005122285A3 true WO2005122285A3 (en) 2007-08-30

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Country Status (10)

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US (11) US7622367B1 (en)
EP (4) EP2650905B1 (en)
JP (7) JP2008502151A (en)
KR (7) KR101429098B1 (en)
CN (6) CN101120433B (en)
HK (2) HK1176742A1 (en)
IL (1) IL179784A0 (en)
MY (5) MY161998A (en)
TW (1) TWI284423B (en)
WO (1) WO2005122285A2 (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8394483B2 (en) 2007-01-24 2013-03-12 Micron Technology, Inc. Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8865489B2 (en) 2009-05-12 2014-10-21 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8905772B2 (en) 2008-03-05 2014-12-09 The Board Of Trustees Of The University Of Illinois Stretchable and foldable electronic devices
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
US9012784B2 (en) 2008-10-07 2015-04-21 Mc10, Inc. Extremely stretchable electronics
US9105555B2 (en) 2004-06-04 2015-08-11 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9289132B2 (en) 2008-10-07 2016-03-22 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US9324733B2 (en) 2004-06-04 2016-04-26 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US9349900B2 (en) 2006-09-20 2016-05-24 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US9450043B2 (en) 2004-06-04 2016-09-20 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US9554484B2 (en) 2012-03-30 2017-01-24 The Board Of Trustees Of The University Of Illinois Appendage mountable electronic devices conformable to surfaces
US9601671B2 (en) 2007-01-17 2017-03-21 The Board Of Trustees Of The University Of Illinois Optical systems fabricated by printing-based assembly

Families Citing this family (905)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6162705A (en) * 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
US20080055581A1 (en) * 2004-04-27 2008-03-06 Rogers John A Devices and methods for pattern generation by ink lithography
US7799699B2 (en) * 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US7943491B2 (en) * 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
EP1812969B1 (en) * 2004-11-10 2015-05-06 Canon Kabushiki Kaisha Field effect transistor comprising an amorphous oxide
DE102004059467A1 (en) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gate made of organic field effect transistors
US7229901B2 (en) * 2004-12-16 2007-06-12 Wisconsin Alumni Research Foundation Fabrication of strained heterojunction structures
MX2007007939A (en) 2004-12-27 2007-11-07 Quantum Paper Inc Addressable and printable emissive display.
JP2006217281A (en) * 2005-02-03 2006-08-17 Toshiba Corp Manufacturing method of thin film bulk acoustic resonator
KR100661696B1 (en) * 2005-02-22 2006-12-26 삼성전자주식회사 Semiconductor Nanowire of Heterostructure and Method for Producing the same
US20080087906A1 (en) * 2005-02-25 2008-04-17 Dowa Electronics Materials Co., Ltd. Algaas-Based Light Emitting Diode Having Double Hetero Junction and Manufacturing Method of the Same
WO2006105478A2 (en) * 2005-03-31 2006-10-05 New York University Conducting polymer nanowire brain-machine interface systems and methods
MY152238A (en) * 2005-06-02 2014-09-15 Univ Illinois Printable semiconductor structures and related methods of making and assembling
US8718437B2 (en) * 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2008048232A2 (en) 2005-08-22 2008-04-24 Q1 Nanosystems, Inc. Nanostructure and photovoltaic cell implementing same
US20070090459A1 (en) * 2005-10-26 2007-04-26 Motorola, Inc. Multiple gate printed transistor method and apparatus
US8043950B2 (en) * 2005-10-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2007057795A1 (en) * 2005-11-16 2007-05-24 Nxp B.V. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
KR100870820B1 (en) * 2005-12-29 2008-11-27 매그나칩 반도체 유한회사 Image sensor and method for manufacturing the same
AU2007209759A1 (en) * 2006-01-24 2007-08-02 Mycrolab Diagnostics Pty Ltd Stamping methods and devices
CN101410250A (en) * 2006-01-24 2009-04-15 迈克罗拉布私人有限公司 Methods for low cost manufacturing of complex layered materials and devices
US7354809B2 (en) 2006-02-13 2008-04-08 Wisconsin Alumi Research Foundation Method for double-sided processing of thin film transistors
JP4564929B2 (en) * 2006-02-21 2010-10-20 キヤノン株式会社 Method for forming a three-dimensional photonic crystal
US20070194450A1 (en) 2006-02-21 2007-08-23 Tyberg Christy S BEOL compatible FET structure
US9406505B2 (en) * 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
JP2009528254A (en) 2006-03-03 2009-08-06 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Spatally arranged nanotubes and method of making nanotube arrays
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
KR101150142B1 (en) * 2006-04-06 2012-06-11 어플라이드 머티어리얼스, 인코포레이티드 Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
WO2007117672A2 (en) * 2006-04-07 2007-10-18 Qd Vision, Inc. Methods of depositing nanomaterial & methods of making a device
WO2007120877A2 (en) * 2006-04-14 2007-10-25 Qd Vision, Inc. Transfer surface for manufacturing a light emitting device
US7741647B2 (en) * 2006-05-22 2010-06-22 Hewlett-Packard Development Company Utilizing nanowire for different applications
US7777290B2 (en) 2006-06-13 2010-08-17 Wisconsin Alumni Research Foundation PIN diodes for photodetection and high-speed, high-resolution image sensing
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
WO2008111947A1 (en) * 2006-06-24 2008-09-18 Qd Vision, Inc. Methods and articles including nanomaterial
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
CN101501846B (en) 2006-08-14 2012-02-08 皇家飞利浦电子股份有限公司 Deformable integrated circuit device
CA2661638C (en) 2006-08-30 2014-07-15 Northwestern University Monodisperse single-walled carbon nanotube populations and related methods for providing same
KR101453419B1 (en) * 2006-09-06 2014-10-23 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 A two-dimensional stretchable and bendable device
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US7960218B2 (en) 2006-09-08 2011-06-14 Wisconsin Alumni Research Foundation Method for fabricating high-speed thin-film transistors
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7834424B2 (en) * 2006-09-12 2010-11-16 The Board Of Trustees Of The Leland Stanford Junior University Extendable connector and network
WO2008060358A2 (en) * 2006-09-29 2008-05-22 Massachusetts Institute Of Technology System and method for providing the capability of peeling thin polymer films from a substrate
CN101578520B (en) 2006-10-18 2015-09-16 哈佛学院院长等 Based on formed pattern porous medium cross flow and through biometric apparatus, and preparation method thereof and using method
JP5171016B2 (en) * 2006-10-27 2013-03-27 キヤノン株式会社 Semiconductor member, manufacturing method of semiconductor article, and LED array using the manufacturing method
US7858156B2 (en) 2006-11-27 2010-12-28 The University Of Massachusetts Surface buckling method and articles formed thereby
US7482270B2 (en) * 2006-12-05 2009-01-27 International Business Machines Corporation Fully and uniformly silicided gate structure and method for forming same
US8836212B2 (en) * 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
GB0701909D0 (en) * 2007-01-31 2007-03-14 Imp Innovations Ltd Deposition Of Organic Layers
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
US20080254613A1 (en) * 2007-04-10 2008-10-16 Applied Materials, Inc. Methods for forming metal interconnect structure for thin film transistor applications
US8294139B2 (en) 2007-06-21 2012-10-23 Micron Technology, Inc. Multilayer antireflection coatings, structures and devices including the same and methods of making the same
US8097175B2 (en) 2008-10-28 2012-01-17 Micron Technology, Inc. Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
US7959975B2 (en) 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
US8372295B2 (en) 2007-04-20 2013-02-12 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
WO2008150867A2 (en) 2007-05-29 2008-12-11 Innova Materials, Llc Surfaces having particles and related methods
US8889216B2 (en) 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8133768B2 (en) 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8852467B2 (en) * 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US8456392B2 (en) 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8809126B2 (en) * 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
JP5773646B2 (en) * 2007-06-25 2015-09-02 キユーデイー・ビジヨン・インコーポレーテツド Compositions and methods comprising depositing nanomaterials
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US8283258B2 (en) 2007-08-16 2012-10-09 Micron Technology, Inc. Selective wet etching of hafnium aluminum oxide films
JP2009059870A (en) * 2007-08-31 2009-03-19 Sanyo Electric Co Ltd Light emission module, and manufacturing method thereof
KR100878872B1 (en) * 2007-09-03 2009-01-15 성균관대학교산학협력단 Organic thin film transistor comprising gate electrode of nanocrystalline conductive carbon layer, fabrication method thereof, and organic semiconductor device comprising the same
GB2453766A (en) * 2007-10-18 2009-04-22 Novalia Ltd Method of fabricating an electronic device
US7741144B2 (en) * 2007-11-02 2010-06-22 Applied Materials, Inc. Plasma treatment between deposition processes
WO2009059240A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Intrinsic amorphous silicon layer
CN101999162A (en) * 2007-12-14 2011-03-30 纳米系统公司 Methods for formation of substrate elements
KR100974623B1 (en) 2007-12-24 2010-08-09 고려대학교 산학협력단 Method for preparing V2O5 nanowire film having improved alignment and the V2O5 nanowire film prepared therefrom
TW201001624A (en) 2008-01-24 2010-01-01 Soligie Inc Silicon thin film transistors, systems, and methods of making same
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8800138B2 (en) * 2008-02-08 2014-08-12 Carestream Health, Inc. Method for conditioning a substrate surface for forming an electronic device thereon and resultant device
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
ATE545064T1 (en) * 2008-02-25 2012-02-15 Sony Corp METHOD FOR APPLYING A STRUCTURE MADE OF METAL, METAL OXIDE AND/OR SEMICONDUCTOR MATERIAL ON A SUPPORT
TWI485642B (en) * 2008-02-26 2015-05-21 Epistar Corp A customized manufacturing method for an optoelectrical device
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
KR101510785B1 (en) * 2008-03-27 2015-04-10 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 Cotton thread as a low-cost multi-assay diagnostic platform
WO2009120963A2 (en) * 2008-03-27 2009-10-01 President And Fellows Of Harvard College Paper-based cellular arrays
CA2719320A1 (en) * 2008-03-27 2009-10-01 President And Fellows Of Harvard College Three-dimensional microfluidic devices
EP2265958A4 (en) * 2008-03-27 2016-10-19 Harvard College Paper-based microfluidic systems
US8470701B2 (en) * 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
US8114300B2 (en) * 2008-04-21 2012-02-14 Micron Technology, Inc. Multi-layer method for formation of registered arrays of cylindrical pores in polymer films
US9372397B2 (en) 2008-04-25 2016-06-21 Northwestern University Polymer pen lithography
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
JP2011524064A (en) 2008-05-06 2011-08-25 キユーデイー・ビジヨン・インコーポレーテツド Solid state lighting device containing quantum confined semiconductor nanoparticles
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US8906284B2 (en) * 2008-05-28 2014-12-09 The University Of Massachusetts Wrinkled adhesive surfaces and methods for the preparation thereof
WO2010005707A1 (en) * 2008-06-16 2010-01-14 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
US20090315650A1 (en) * 2008-06-19 2009-12-24 Ahmadreza Rofougaran Method and system for an integrated circuit with ferromagnetic layers
US8179336B2 (en) 2008-06-30 2012-05-15 Global Oled Technology, Llc. Tiled electronic display
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US7927976B2 (en) 2008-07-23 2011-04-19 Semprius, Inc. Reinforced composite stamp for dry transfer printing of semiconductor elements
US20100084081A1 (en) * 2008-08-06 2010-04-08 Academia Sinica Method for Fabricating Organic Optoelectronic Multi-Layer Devices
KR101002683B1 (en) * 2008-08-19 2010-12-20 한국기계연구원 High pressure ball valve within the double seat ring and relief valve
CA2734864A1 (en) 2008-08-21 2010-02-25 Innova Dynamics, Inc. Enhanced surfaces, coatings, and related methods
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US20100051932A1 (en) * 2008-08-28 2010-03-04 Seo-Yong Cho Nanostructure and uses thereof
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
KR101004849B1 (en) 2008-09-02 2010-12-28 삼성전기주식회사 Fabrication method of thin film device
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8274039B2 (en) * 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US20100059110A1 (en) * 2008-09-11 2010-03-11 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
US8679888B2 (en) 2008-09-24 2014-03-25 The Board Of Trustees Of The University Of Illinois Arrays of ultrathin silicon solar microcells
US7879691B2 (en) 2008-09-24 2011-02-01 Eastman Kodak Company Low cost die placement
US8034663B2 (en) 2008-09-24 2011-10-11 Eastman Kodak Company Low cost die release wafer
US8361840B2 (en) 2008-09-24 2013-01-29 Eastman Kodak Company Thermal barrier layer for integrated circuit manufacture
US7772042B2 (en) 2008-09-24 2010-08-10 Eastman Kodak Company Solvent softening to allow die placement
GB2464102A (en) * 2008-10-01 2010-04-07 Optovate Ltd Illumination apparatus comprising multiple monolithic subarrays
US8372726B2 (en) * 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US9123614B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Methods and applications of non-planar imaging arrays
US9119533B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US9545285B2 (en) 2011-10-05 2017-01-17 Mc10, Inc. Cardiac catheter employing conformal electronics for mapping
US8247325B2 (en) 2008-10-10 2012-08-21 Uchicago Argonne, Llc Direct growth of metal nanoplates on semiconductor substrates
GB0819450D0 (en) * 2008-10-23 2008-12-03 Cambridge Display Tech Ltd Oled driver chiplet integration
GB0819449D0 (en) * 2008-10-23 2008-12-03 Cambridge Display Tech Ltd Display drivers
KR101736722B1 (en) 2008-11-19 2017-05-17 셈프리어스 아이엔씨. Printing semiconductor elements by shear-assisted elastomeric stamp transfer
US20100133094A1 (en) * 2008-12-02 2010-06-03 Applied Materials, Inc. Transparent conductive film with high transmittance formed by a reactive sputter deposition
US9352959B1 (en) 2008-12-16 2016-05-31 Massachusetts Institute Of Technology Method and applications of thin-film membrane transfer
US9520314B2 (en) * 2008-12-19 2016-12-13 Applied Materials, Inc. High temperature electrostatic chuck bonding adhesive
US20100163406A1 (en) * 2008-12-30 2010-07-01 Applied Materials, Inc. Substrate support in a reactive sputter chamber
EP2386117A4 (en) * 2009-01-12 2017-12-27 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8082537B1 (en) * 2009-01-28 2011-12-20 Xilinx, Inc. Method and apparatus for implementing spatially programmable through die vias in an integrated circuit
US7989959B1 (en) 2009-01-29 2011-08-02 Xilinx, Inc. Method of forming stacked-die integrated circuit
KR20100087932A (en) * 2009-01-29 2010-08-06 삼성전기주식회사 A method for die attach using self-assemble monolayer and a package substrate attached die using the self-assemble monolayer
US7884004B2 (en) 2009-02-04 2011-02-08 International Business Machines Corporation Maskless process for suspending and thinning nanowires
US20100221596A1 (en) * 2009-02-06 2010-09-02 Huggins Robert A Systems, methods of manufacture and use involving lithium and/or hydrogen for energy-storage applications
MX2011008352A (en) 2009-02-09 2011-11-28 Semprius Inc Concentrator-type photovoltaic (cpv) modules, receivers and sub-receivers and methods of forming same.
US8987868B1 (en) 2009-02-24 2015-03-24 Xilinx, Inc. Method and apparatus for programmable heterogeneous integration of stacked semiconductor die
US8380776B2 (en) * 2009-03-02 2013-02-19 The Yokohama Rubber Co., Ltd. Computational method of material constant of composite material and volume fraction of material component in composite material, and recording medium
ES2612507T3 (en) 2009-03-06 2017-05-17 President And Fellows Of Harvard College Microfluidic and electrochemical devices
US8986836B2 (en) * 2009-03-19 2015-03-24 Ohio University Microspheres and their methods of preparation
US8877648B2 (en) * 2009-03-26 2014-11-04 Semprius, Inc. Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby
US8378715B2 (en) 2009-04-14 2013-02-19 Monolithic 3D Inc. Method to construct systems
US8170846B2 (en) * 2009-04-14 2012-05-01 The Yokohama Rubber Co., Ltd. Computation method of mechanical material constant of composite material and volume fraction of material component in composite material, and recording medium
US9509313B2 (en) 2009-04-14 2016-11-29 Monolithic 3D Inc. 3D semiconductor device
US8362482B2 (en) 2009-04-14 2013-01-29 Monolithic 3D Inc. Semiconductor device and structure
US9577642B2 (en) 2009-04-14 2017-02-21 Monolithic 3D Inc. Method to form a 3D semiconductor device
US8258810B2 (en) 2010-09-30 2012-09-04 Monolithic 3D Inc. 3D semiconductor device
US8384426B2 (en) 2009-04-14 2013-02-26 Monolithic 3D Inc. Semiconductor device and structure
US8754533B2 (en) 2009-04-14 2014-06-17 Monolithic 3D Inc. Monolithic three-dimensional semiconductor device and structure
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8669778B1 (en) 2009-04-14 2014-03-11 Monolithic 3D Inc. Method for design and manufacturing of a 3D semiconductor device
US8427200B2 (en) 2009-04-14 2013-04-23 Monolithic 3D Inc. 3D semiconductor device
US8362800B2 (en) 2010-10-13 2013-01-29 Monolithic 3D Inc. 3D semiconductor device including field repairable logics
US8395191B2 (en) 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US7986042B2 (en) 2009-04-14 2011-07-26 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8405420B2 (en) 2009-04-14 2013-03-26 Monolithic 3D Inc. System comprising a semiconductor device and structure
US8373439B2 (en) 2009-04-14 2013-02-12 Monolithic 3D Inc. 3D semiconductor device
US9711407B2 (en) 2009-04-14 2017-07-18 Monolithic 3D Inc. Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
EP2427935A1 (en) 2009-05-04 2012-03-14 Advanced Bionics, LLC Multi-contact connector system
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US8883287B2 (en) * 2009-06-29 2014-11-11 Infinite Corridor Technology, Llc Structured material substrates for flexible, stretchable electronics
US8261660B2 (en) * 2009-07-22 2012-09-11 Semprius, Inc. Vacuum coupled tool apparatus for dry transfer printing semiconductor elements
US20110114177A1 (en) * 2009-07-23 2011-05-19 Applied Materials, Inc. Mixed silicon phase film for high efficiency thin film silicon solar cells
KR101077789B1 (en) 2009-08-07 2011-10-28 한국과학기술원 Manufacturing method for LED display and LED display manufactured by the same
KR101865888B1 (en) 2009-09-09 2018-06-08 삼성전자주식회사 Particles including nanoparticles, uses thereof, and methods
WO2011031876A1 (en) 2009-09-09 2011-03-17 Qd Vision, Inc. Formulations including nanoparticles
KR101113692B1 (en) 2009-09-17 2012-02-27 한국과학기술원 A manufacturing method for solar cell and GaN solar cell manufactured by the same
WO2011037829A2 (en) * 2009-09-24 2011-03-31 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US20110218756A1 (en) * 2009-10-01 2011-09-08 Mc10, Inc. Methods and apparatus for conformal sensing of force and/or acceleration at a person's head
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
US20120065937A1 (en) * 2009-10-01 2012-03-15 Mc10, Inc. Methods and apparatus for measuring technical parameters of equipment, tools and components via conformal electronics
US8742476B1 (en) 2012-11-27 2014-06-03 Monolithic 3D Inc. Semiconductor device and structure
US10043781B2 (en) 2009-10-12 2018-08-07 Monolithic 3D Inc. 3D semiconductor device and structure
US8536023B2 (en) 2010-11-22 2013-09-17 Monolithic 3D Inc. Method of manufacturing a semiconductor device and structure
US9099424B1 (en) 2012-08-10 2015-08-04 Monolithic 3D Inc. Semiconductor system, device and structure with heat removal
US8476145B2 (en) 2010-10-13 2013-07-02 Monolithic 3D Inc. Method of fabricating a semiconductor device and structure
US10910364B2 (en) 2009-10-12 2021-02-02 Monolitaic 3D Inc. 3D semiconductor device
US8450804B2 (en) 2011-03-06 2013-05-28 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US8294159B2 (en) 2009-10-12 2012-10-23 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US11018133B2 (en) 2009-10-12 2021-05-25 Monolithic 3D Inc. 3D integrated circuit
US10354995B2 (en) 2009-10-12 2019-07-16 Monolithic 3D Inc. Semiconductor memory device and structure
US11374118B2 (en) 2009-10-12 2022-06-28 Monolithic 3D Inc. Method to form a 3D integrated circuit
US10157909B2 (en) 2009-10-12 2018-12-18 Monolithic 3D Inc. 3D semiconductor device and structure
US10388863B2 (en) 2009-10-12 2019-08-20 Monolithic 3D Inc. 3D memory device and structure
US10366970B2 (en) 2009-10-12 2019-07-30 Monolithic 3D Inc. 3D semiconductor device and structure
US8581349B1 (en) 2011-05-02 2013-11-12 Monolithic 3D Inc. 3D memory semiconductor device and structure
US8615025B2 (en) * 2009-10-13 2013-12-24 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser
US9316785B2 (en) 2013-10-09 2016-04-19 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US9882073B2 (en) 2013-10-09 2018-01-30 Skorpios Technologies, Inc. Structures for bonding a direct-bandgap chip to a silicon photonic device
US8368995B2 (en) 2009-10-13 2013-02-05 Skorpios Technologies, Inc. Method and system for hybrid integration of an opto-electronic integrated circuit
US8605766B2 (en) 2009-10-13 2013-12-10 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a mach zehnder modulator
US11181688B2 (en) 2009-10-13 2021-11-23 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US8630326B2 (en) 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US8559470B2 (en) 2009-10-13 2013-10-15 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a phase modulator
US8611388B2 (en) 2009-10-13 2013-12-17 Skorpios Technologies, Inc. Method and system for heterogeneous substrate bonding of waveguide receivers
US8867578B2 (en) 2009-10-13 2014-10-21 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser for a cable TV transmitter
WO2011046664A2 (en) * 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
KR101047486B1 (en) * 2009-11-12 2011-07-08 삼성전기주식회사 SOI substrate processing method
KR101221871B1 (en) * 2009-12-07 2013-01-15 한국전자통신연구원 method for manufacturing semiconductor device
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
EP2513953B1 (en) * 2009-12-16 2017-10-18 The Board of Trustees of the University of Illionis Electrophysiology using conformal electronics
US10441185B2 (en) * 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
US9209059B2 (en) 2009-12-17 2015-12-08 Cooledge Lighting, Inc. Method and eletrostatic transfer stamp for transferring semiconductor dice using electrostatic transfer printing techniques
US8334152B2 (en) * 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
KR101149677B1 (en) * 2010-01-20 2012-07-11 주식회사 엘지실트론 A manufacturing method for flexible device and flexible device, solar cell, LED manufactured by the same
CN102484534A (en) * 2010-01-29 2012-05-30 惠普发展公司，有限责任合伙企业 Optical sensor networks and methods for fabricating the same
AU2011212916B2 (en) 2010-02-03 2015-07-02 President And Fellows Of Harvard College Devices and methods for multiplexed assays
US8298875B1 (en) 2011-03-06 2012-10-30 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8492886B2 (en) 2010-02-16 2013-07-23 Monolithic 3D Inc 3D integrated circuit with logic
US8541819B1 (en) 2010-12-09 2013-09-24 Monolithic 3D Inc. Semiconductor device and structure
US8026521B1 (en) 2010-10-11 2011-09-27 Monolithic 3D Inc. Semiconductor device and structure
US8373230B1 (en) 2010-10-13 2013-02-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US8461035B1 (en) 2010-09-30 2013-06-11 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9202954B2 (en) * 2010-03-03 2015-12-01 Q1 Nanosystems Corporation Nanostructure and photovoltaic cell implementing same
TWI556802B (en) 2010-03-12 2016-11-11 美國伊利諾大學理事會 Implantable biomedical devices on bioresorbable substrates
KR101837481B1 (en) 2010-03-17 2018-03-13 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 implantable biomedical devices on bioresorbable substrates
US20110232753A1 (en) * 2010-03-23 2011-09-29 Applied Materials, Inc. Methods of forming a thin-film solar energy device
US9161448B2 (en) 2010-03-29 2015-10-13 Semprius, Inc. Laser assisted transfer welding process
US8501536B2 (en) 2010-03-31 2013-08-06 Seagate Technology Llc Integrating and aligning laser chips on sliders for HAMR applications
KR20130079327A (en) * 2010-04-02 2013-07-10 로디아 오퍼레이션스 Selective nanoparticle assembly systems and methods
US9040318B2 (en) * 2010-04-09 2015-05-26 The Trustees Of Princeton University Lamination as a modular approach for building organic photosensitive devices
US8907350B2 (en) 2010-04-28 2014-12-09 Cree, Inc. Semiconductor devices having improved adhesion and methods of fabricating the same
US9015023B2 (en) 2010-05-05 2015-04-21 Xilinx, Inc. Device specific configuration of operating voltage
TWI426619B (en) * 2010-06-25 2014-02-11 Univ Nat Taiwan Solar cell and method for fabricating the heterojunction thereof
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US10094034B2 (en) 2015-08-28 2018-10-09 Lam Research Corporation Edge flow element for electroplating apparatus
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
CN102309106A (en) * 2010-07-08 2012-01-11 富士迈半导体精密工业（上海）有限公司 Luminous solar umbrella
TWI427829B (en) 2010-07-26 2014-02-21 Epistar Corp A semiconductor optoelectronic device and the method of manufacturing the same
US8642416B2 (en) 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
US8901613B2 (en) 2011-03-06 2014-12-02 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US9953925B2 (en) 2011-06-28 2018-04-24 Monolithic 3D Inc. Semiconductor system and device
US10217667B2 (en) 2011-06-28 2019-02-26 Monolithic 3D Inc. 3D semiconductor device, fabrication method and system
US9219005B2 (en) 2011-06-28 2015-12-22 Monolithic 3D Inc. Semiconductor system and device
WO2012018997A2 (en) 2010-08-06 2012-02-09 Semprius, Inc. Materials and processes for releasing printable compound semiconductor devices
CN103155174B (en) 2010-08-07 2017-06-23 宸鸿科技控股有限公司 The device assembly of the additive with surface insertion and the manufacture method of correlation
US8304493B2 (en) 2010-08-20 2012-11-06 Micron Technology, Inc. Methods of forming block copolymers
US9142468B2 (en) 2010-08-26 2015-09-22 Semprius, Inc. Structures and methods for testing printable integrated circuits
TWI513032B (en) * 2010-09-01 2015-12-11 Nthdegree Tech Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
WO2012031178A2 (en) * 2010-09-03 2012-03-08 The Procter & Gamble Company A light emitting apparatus
US20130176750A1 (en) * 2011-09-02 2013-07-11 The Procter & Gamble Company Light emitting apparatus
US9455242B2 (en) 2010-09-06 2016-09-27 Epistar Corporation Semiconductor optoelectronic device
KR101696644B1 (en) * 2010-09-15 2017-01-16 삼성전자주식회사 Rf stacked module using three dimension vertical interconnection and arrangement method thereof
US8273610B2 (en) 2010-11-18 2012-09-25 Monolithic 3D Inc. Method of constructing a semiconductor device and structure
US8163581B1 (en) 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US11482440B2 (en) 2010-12-16 2022-10-25 Monolithic 3D Inc. 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
US10497713B2 (en) 2010-11-18 2019-12-03 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11158674B2 (en) 2010-10-11 2021-10-26 Monolithic 3D Inc. Method to produce a 3D semiconductor device and structure
US10896931B1 (en) 2010-10-11 2021-01-19 Monolithic 3D Inc. 3D semiconductor device and structure
US11018191B1 (en) 2010-10-11 2021-05-25 Monolithic 3D Inc. 3D semiconductor device and structure
US8114757B1 (en) 2010-10-11 2012-02-14 Monolithic 3D Inc. Semiconductor device and structure
US11227897B2 (en) 2010-10-11 2022-01-18 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11315980B1 (en) 2010-10-11 2022-04-26 Monolithic 3D Inc. 3D semiconductor device and structure with transistors
US11257867B1 (en) 2010-10-11 2022-02-22 Monolithic 3D Inc. 3D semiconductor device and structure with oxide bonds
US11600667B1 (en) 2010-10-11 2023-03-07 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US11024673B1 (en) 2010-10-11 2021-06-01 Monolithic 3D Inc. 3D semiconductor device and structure
US10290682B2 (en) 2010-10-11 2019-05-14 Monolithic 3D Inc. 3D IC semiconductor device and structure with stacked memory
US11469271B2 (en) 2010-10-11 2022-10-11 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US8283215B2 (en) 2010-10-13 2012-10-09 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US10998374B1 (en) 2010-10-13 2021-05-04 Monolithic 3D Inc. Multilevel semiconductor device and structure
US8379458B1 (en) 2010-10-13 2013-02-19 Monolithic 3D Inc. Semiconductor device and structure
US11605663B2 (en) 2010-10-13 2023-03-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11855100B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11855114B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11327227B2 (en) 2010-10-13 2022-05-10 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11694922B2 (en) 2010-10-13 2023-07-04 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11869915B2 (en) 2010-10-13 2024-01-09 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11043523B1 (en) 2010-10-13 2021-06-22 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US10978501B1 (en) 2010-10-13 2021-04-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US11133344B2 (en) 2010-10-13 2021-09-28 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11404466B2 (en) 2010-10-13 2022-08-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11164898B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure
US9197804B1 (en) 2011-10-14 2015-11-24 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US11437368B2 (en) 2010-10-13 2022-09-06 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US10833108B2 (en) 2010-10-13 2020-11-10 Monolithic 3D Inc. 3D microdisplay device and structure
US10679977B2 (en) 2010-10-13 2020-06-09 Monolithic 3D Inc. 3D microdisplay device and structure
US10943934B2 (en) 2010-10-13 2021-03-09 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11063071B1 (en) 2010-10-13 2021-07-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US11163112B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11929372B2 (en) 2010-10-13 2024-03-12 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US8673541B2 (en) 2010-10-29 2014-03-18 Seagate Technology Llc Block copolymer assembly methods and patterns formed thereby
GB2485346A (en) * 2010-11-08 2012-05-16 Nanogan Ltd High quality devices growth on pixelated patent templates
US11508605B2 (en) 2010-11-18 2022-11-22 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11804396B2 (en) 2010-11-18 2023-10-31 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11018042B1 (en) 2010-11-18 2021-05-25 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11355381B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11521888B2 (en) 2010-11-18 2022-12-06 Monolithic 3D Inc. 3D semiconductor device and structure with high-k metal gate transistors
US11107721B2 (en) 2010-11-18 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure with NAND logic
US11031275B2 (en) 2010-11-18 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11004719B1 (en) 2010-11-18 2021-05-11 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11482438B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11735462B2 (en) 2010-11-18 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11482439B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
US11784082B2 (en) 2010-11-18 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11211279B2 (en) 2010-11-18 2021-12-28 Monolithic 3D Inc. Method for processing a 3D integrated circuit and structure
US11355380B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
US11854857B1 (en) 2010-11-18 2023-12-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11610802B2 (en) 2010-11-18 2023-03-21 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
US11094576B1 (en) 2010-11-18 2021-08-17 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11862503B2 (en) 2010-11-18 2024-01-02 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11443971B2 (en) 2010-11-18 2022-09-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11923230B1 (en) 2010-11-18 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11121021B2 (en) 2010-11-18 2021-09-14 Monolithic 3D Inc. 3D semiconductor device and structure
US11901210B2 (en) 2010-11-18 2024-02-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11164770B1 (en) 2010-11-18 2021-11-02 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11569117B2 (en) 2010-11-18 2023-01-31 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11615977B2 (en) 2010-11-18 2023-03-28 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11495484B2 (en) 2010-11-18 2022-11-08 Monolithic 3D Inc. 3D semiconductor devices and structures with at least two single-crystal layers
US9899329B2 (en) 2010-11-23 2018-02-20 X-Celeprint Limited Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
US8222084B2 (en) 2010-12-08 2012-07-17 Skorpios Technologies, Inc. Method and system for template assisted wafer bonding
US8735191B2 (en) 2012-01-04 2014-05-27 Skorpios Technologies, Inc. Method and system for template assisted wafer bonding using pedestals
US8932898B2 (en) * 2011-01-14 2015-01-13 The Board Of Trustees Of The Leland Stanford Junior Univerity Deposition and post-processing techniques for transparent conductive films
US9469525B2 (en) 2011-01-31 2016-10-18 Seagate Technology Llc Modified surface for block copolymer self-assembly
US20120194564A1 (en) 2011-01-31 2012-08-02 White Christopher J Display with secure decompression of image signals
US9177500B2 (en) 2011-01-31 2015-11-03 Global Oled Technology Llc Display with secure decryption of image signals
US8619103B2 (en) 2011-01-31 2013-12-31 Global Oled Technology Llc Electroluminescent device multilevel-drive chromaticity-shift compensation
US8456390B2 (en) 2011-01-31 2013-06-04 Global Oled Technology Llc Electroluminescent device aging compensation with multilevel drive
US8803857B2 (en) * 2011-02-10 2014-08-12 Ronald S. Cok Chiplet display device with serial control
US8624882B2 (en) 2011-02-10 2014-01-07 Global Oled Technology Llc Digital display with integrated computing circuit
US8599118B2 (en) 2011-02-16 2013-12-03 Global Oled Technology Llc Chiplet display with electrode connectors
US8587501B2 (en) 2011-02-17 2013-11-19 Global Oled Technology Llc Electroluminescent display device with optically communicating chiplets
FR2972294B1 (en) * 2011-03-02 2013-04-26 Commissariat Energie Atomique SELECTIVE CHEMICAL ETCHING PROCESS
US8975670B2 (en) 2011-03-06 2015-03-10 Monolithic 3D Inc. Semiconductor device and structure for heat removal
TWI509239B (en) * 2011-03-07 2015-11-21 Univ Singapore Spinwave based nondestructive material, structure, component, or device metrology or testing systems and methods
US9702839B2 (en) 2011-03-11 2017-07-11 Mc10, Inc. Integrated devices to facilitate quantitative assays and diagnostics
US9496454B2 (en) 2011-03-22 2016-11-15 Micron Technology, Inc. Solid state optoelectronic device with plated support substrate
JP6109489B2 (en) * 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 EL display device
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
US20140081154A1 (en) * 2011-05-17 2014-03-20 Landy Toth Devices, systems, and methods for assessing implants, organs, transplants, tissues, synthetic constructs, vascular grafts, and the like
US8520114B2 (en) 2011-06-01 2013-08-27 Global Oled Technology Llc Apparatus for displaying and sensing images
US8934259B2 (en) 2011-06-08 2015-01-13 Semprius, Inc. Substrates with transferable chiplets
WO2012173654A2 (en) * 2011-06-15 2012-12-20 Power Gold LLC Flexible circuit assembly and method thereof
US8879276B2 (en) 2011-06-15 2014-11-04 Power Gold LLC Flexible circuit assembly and method thereof
US10388568B2 (en) 2011-06-28 2019-08-20 Monolithic 3D Inc. 3D semiconductor device and system
TWI433625B (en) 2011-07-04 2014-04-01 Ind Tech Res Inst Method for fabricating the flexible electronic device
WO2013010113A1 (en) 2011-07-14 2013-01-17 The Board Of Trustees Of The University Of Illinois Non-contact transfer printing
WO2013022853A1 (en) 2011-08-05 2013-02-14 Mc10, Inc. Catheter balloon methods and apparatus employing sensing elements
US9757050B2 (en) 2011-08-05 2017-09-12 Mc10, Inc. Catheter balloon employing force sensing elements
JP5813875B2 (en) 2011-08-24 2015-11-17 イノバ ダイナミックス， インコーポレイテッド Patterned transparent conductor and related manufacturing method
US9977188B2 (en) 2011-08-30 2018-05-22 Skorpios Technologies, Inc. Integrated photonics mode expander
US9579040B2 (en) 2011-09-01 2017-02-28 Mc10, Inc. Electronics for detection of a condition of tissue
US20130175515A1 (en) * 2011-09-02 2013-07-11 The Procter & Gamble Company Light emitting apparatus
JP5214783B2 (en) * 2011-09-07 2013-06-19 株式会社東芝 Method for manufacturing magnetic recording medium
US9412727B2 (en) 2011-09-20 2016-08-09 Semprius, Inc. Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion
US8687399B2 (en) 2011-10-02 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US20140242747A1 (en) * 2011-10-04 2014-08-28 Applied Nanotech Holdings, Inc. Thin Film Deposition of Materials by External Induced Release from a Ribbon Tape
US9029173B2 (en) 2011-10-18 2015-05-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
CN102435628B (en) * 2011-11-02 2013-04-03 电子科技大学 Characterization method for structural morphology of porous electrode material
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8426227B1 (en) 2011-11-18 2013-04-23 LuxVue Technology Corporation Method of forming a micro light emitting diode array
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8646505B2 (en) 2011-11-18 2014-02-11 LuxVue Technology Corporation Micro device transfer head
CN104472023B (en) 2011-12-01 2018-03-27 伊利诺伊大学评议会 It is designed to undergo the transient state device of programmable transformation
US8927415B2 (en) 2011-12-09 2015-01-06 Intermolecular, Inc. Graphene barrier layers for interconnects and methods for forming the same
US8736008B2 (en) 2012-01-04 2014-05-27 General Electric Company Photodiode array and methods of fabrication
US8999105B2 (en) * 2012-01-06 2015-04-07 President And Fellows Of Harvard College Small-scale fabrication systems and methods
NL2009982A (en) 2012-01-10 2013-07-15 Asml Netherlands Bv Source mask optimization to reduce stochastic effects.
CN105336748B (en) 2012-01-18 2019-05-03 斯考皮欧技术有限公司 The Vertical collection of CMOS electronic device and photonic device
US8492245B1 (en) 2012-02-07 2013-07-23 Wisconsin Alumni Research Foundation Methods for making thin layers of crystalline materials
US8895347B2 (en) 2012-02-16 2014-11-25 Industrial Technology Research Institute Method for fabricating semiconductor layer having textured surface and method for fabricating solar cell
CN103258716B (en) 2012-02-16 2016-03-09 财团法人工业技术研究院 Method for producing semiconductor layer with textured surface, method for producing solar cell
WO2013120908A1 (en) 2012-02-17 2013-08-22 Sony Dadc Austria Ag Microstructured polymer devices
US9054188B2 (en) * 2012-02-24 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Curved wafer processing on method and apparatus
US9000557B2 (en) 2012-03-17 2015-04-07 Zvi Or-Bach Semiconductor device and structure
US11088050B2 (en) 2012-04-09 2021-08-10 Monolithic 3D Inc. 3D semiconductor device with isolation layers
US9752259B2 (en) 2012-04-09 2017-09-05 The Hong Kong Research Intitute Of Textiles And Apparel Limited Stretchable electrical interconnect and method of making same
US8557632B1 (en) 2012-04-09 2013-10-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US11616004B1 (en) 2012-04-09 2023-03-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11881443B2 (en) 2012-04-09 2024-01-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11476181B1 (en) 2012-04-09 2022-10-18 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11594473B2 (en) 2012-04-09 2023-02-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11164811B2 (en) 2012-04-09 2021-11-02 Monolithic 3D Inc. 3D semiconductor device with isolation layers and oxide-to-oxide bonding
US11694944B1 (en) 2012-04-09 2023-07-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11410912B2 (en) 2012-04-09 2022-08-09 Monolithic 3D Inc. 3D semiconductor device with vias and isolation layers
US10600888B2 (en) 2012-04-09 2020-03-24 Monolithic 3D Inc. 3D semiconductor device
US11735501B1 (en) 2012-04-09 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US9548332B2 (en) 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US9034754B2 (en) 2012-05-25 2015-05-19 LuxVue Technology Corporation Method of forming a micro device transfer head with silicon electrode
US9226402B2 (en) 2012-06-11 2015-12-29 Mc10, Inc. Strain isolation structures for stretchable electronics
US9247637B2 (en) 2012-06-11 2016-01-26 Mc10, Inc. Strain relief structures for stretchable interconnects
JP2015521894A (en) 2012-07-05 2015-08-03 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． Catheter device including flow sensing
US9295842B2 (en) 2012-07-05 2016-03-29 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
US8569115B1 (en) 2012-07-06 2013-10-29 LuxVue Technology Corporation Method of forming a compliant bipolar micro device transfer head with silicon electrodes
WO2014022558A1 (en) * 2012-07-31 2014-02-06 Wayne State University Method of making flexible, foldable, and stretchable devices
US9543457B2 (en) 2012-09-28 2017-01-10 First Solar, Inc. Method and system for manufacturing back contacts of photovoltaic devices
US9087905B2 (en) * 2012-10-03 2015-07-21 International Business Machines Corporation Transistor formation using cold welding
US9087699B2 (en) 2012-10-05 2015-07-21 Micron Technology, Inc. Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
JP2016500869A (en) 2012-10-09 2016-01-14 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． Conformal electronic circuit integrated with clothing
KR101394689B1 (en) 2012-10-09 2014-05-15 재단법인대구경북과학기술원 Stretchable substrate, apparatus and method for manufacturing the stretchable substrate
US9558721B2 (en) 2012-10-15 2017-01-31 Apple Inc. Content-based adaptive refresh schemes for low-power displays
DE102012218845A1 (en) * 2012-10-16 2014-04-17 Robert Bosch Gmbh Manufacturing method for a micromechanical component and micromechanical component
DE102012110358B4 (en) * 2012-10-30 2016-04-07 Leibniz-Institut für Neurobiologie Magdeburg Microelectrode array
KR101980198B1 (en) 2012-11-12 2019-05-21 삼성전자주식회사 Channel layer for stretchable transistors
KR102043703B1 (en) * 2012-11-12 2019-11-12 한국전자통신연구원 method for manufacturing stretchable thin film transistor
KR101955335B1 (en) 2012-11-14 2019-03-07 삼성전자주식회사 Stamp structure and transfer method using the same
US8574929B1 (en) 2012-11-16 2013-11-05 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US8686428B1 (en) 2012-11-16 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
KR101984734B1 (en) * 2012-11-16 2019-06-03 삼성디스플레이 주식회사 Stretchable base plate and organic light emitting display device using the same and the manufacturing method thereof
US8963135B2 (en) * 2012-11-30 2015-02-24 Intel Corporation Integrated circuits and systems and methods for producing the same
KR101968637B1 (en) * 2012-12-07 2019-04-12 삼성전자주식회사 Flexible semiconductor device and method of manufacturing the same
US10303842B2 (en) * 2012-12-10 2019-05-28 Hercules Llc Device for sensorial evaluation of consumer product application feel
US9255001B2 (en) 2012-12-10 2016-02-09 LuxVue Technology Corporation Micro device transfer head array with metal electrodes
US9236815B2 (en) 2012-12-10 2016-01-12 LuxVue Technology Corporation Compliant micro device transfer head array with metal electrodes
US9166114B2 (en) 2012-12-11 2015-10-20 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging cavity
US9153171B2 (en) 2012-12-17 2015-10-06 LuxVue Technology Corporation Smart pixel lighting and display microcontroller
US11961827B1 (en) 2012-12-22 2024-04-16 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11784169B2 (en) 2012-12-22 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11309292B2 (en) 2012-12-22 2022-04-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11967583B2 (en) 2012-12-22 2024-04-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11916045B2 (en) 2012-12-22 2024-02-27 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11063024B1 (en) 2012-12-22 2021-07-13 Monlithic 3D Inc. Method to form a 3D semiconductor device and structure
US11217565B2 (en) 2012-12-22 2022-01-04 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US8674470B1 (en) 2012-12-22 2014-03-18 Monolithic 3D Inc. Semiconductor device and structure
US11018116B2 (en) 2012-12-22 2021-05-25 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
KR102370239B1 (en) 2012-12-28 2022-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US10115663B2 (en) 2012-12-29 2018-10-30 Monolithic 3D Inc. 3D semiconductor device and structure
US9871034B1 (en) 2012-12-29 2018-01-16 Monolithic 3D Inc. Semiconductor device and structure
US10903089B1 (en) 2012-12-29 2021-01-26 Monolithic 3D Inc. 3D semiconductor device and structure
US11430668B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11004694B1 (en) 2012-12-29 2021-05-11 Monolithic 3D Inc. 3D semiconductor device and structure
US11177140B2 (en) 2012-12-29 2021-11-16 Monolithic 3D Inc. 3D semiconductor device and structure
US9385058B1 (en) 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US10600657B2 (en) 2012-12-29 2020-03-24 Monolithic 3D Inc 3D semiconductor device and structure
US11430667B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US10892169B2 (en) 2012-12-29 2021-01-12 Monolithic 3D Inc. 3D semiconductor device and structure
US11087995B1 (en) 2012-12-29 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US10651054B2 (en) 2012-12-29 2020-05-12 Monolithic 3D Inc. 3D semiconductor device and structure
US9082911B2 (en) 2013-01-28 2015-07-14 Q1 Nanosystems Corporation Three-dimensional metamaterial device with photovoltaic bristles
US9082936B2 (en) * 2013-01-29 2015-07-14 Nthdegree Technologies Worldwide Inc. Transparent LED lamp for bidirectional lighting
US9613911B2 (en) 2013-02-06 2017-04-04 The Board Of Trustees Of The University Of Illinois Self-similar and fractal design for stretchable electronics
US10840536B2 (en) 2013-02-06 2020-11-17 The Board Of Trustees Of The University Of Illinois Stretchable electronic systems with containment chambers
WO2014124044A1 (en) * 2013-02-06 2014-08-14 The Board Of Trustees Of The University Of Illinois Self-similar and fractal design for stretchable electronics
US10497633B2 (en) 2013-02-06 2019-12-03 The Board Of Trustees Of The University Of Illinois Stretchable electronic systems with fluid containment
US10617300B2 (en) 2013-02-13 2020-04-14 The Board Of Trustees Of The University Of Illinois Injectable and implantable cellular-scale electronic devices
KR102051519B1 (en) 2013-02-25 2019-12-03 삼성전자주식회사 Thin Film Transistor on Fiber and Manufacturing Method of the same
US9922746B2 (en) 2013-03-01 2018-03-20 The Regents Of The University Of Michigan Stretchable composite conductors for flexible electronics, stretchable plasmonic devices, optical filters, and implantable devices and methods for manufacture thereof
US9875974B2 (en) 2013-03-08 2018-01-23 The Board Of Trustees Of The University Of Illinois Processing techniques for silicon-based transient devices
US11869965B2 (en) 2013-03-11 2024-01-09 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US8902663B1 (en) 2013-03-11 2014-12-02 Monolithic 3D Inc. Method of maintaining a memory state
US10325651B2 (en) 2013-03-11 2019-06-18 Monolithic 3D Inc. 3D semiconductor device with stacked memory
US11935949B1 (en) 2013-03-11 2024-03-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11398569B2 (en) 2013-03-12 2022-07-26 Monolithic 3D Inc. 3D semiconductor device and structure
US8994404B1 (en) 2013-03-12 2015-03-31 Monolithic 3D Inc. Semiconductor device and structure
US11088130B2 (en) 2014-01-28 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US11923374B2 (en) 2013-03-12 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US10840239B2 (en) 2014-08-26 2020-11-17 Monolithic 3D Inc. 3D semiconductor device and structure
US20140264998A1 (en) 2013-03-14 2014-09-18 Q1 Nanosystems Corporation Methods for manufacturing three-dimensional metamaterial devices with photovoltaic bristles
US9954126B2 (en) 2013-03-14 2018-04-24 Q1 Nanosystems Corporation Three-dimensional photovoltaic devices including cavity-containing cores and methods of manufacture
US9117749B1 (en) 2013-03-15 2015-08-25 Monolithic 3D Inc. Semiconductor device and structure
US8901010B2 (en) * 2013-03-15 2014-12-02 Sunpower Corporation Methods for improving solar cell lifetime and efficiency
US10224279B2 (en) 2013-03-15 2019-03-05 Monolithic 3D Inc. Semiconductor device and structure
US9580302B2 (en) 2013-03-15 2017-02-28 Versana Micro Inc. Cell phone having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
WO2014165686A2 (en) 2013-04-04 2014-10-09 The Board Of Trustees Of The University Of Illinois Purification of carbon nanotubes via selective heating
JP6561368B2 (en) 2013-04-12 2019-08-21 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Materials, electronic systems, and modes for active and passive transients
US10292263B2 (en) 2013-04-12 2019-05-14 The Board Of Trustees Of The University Of Illinois Biodegradable materials for multilayer transient printed circuit boards
US11720736B2 (en) 2013-04-15 2023-08-08 Monolithic 3D Inc. Automation methods for 3D integrated circuits and devices
US11574109B1 (en) 2013-04-15 2023-02-07 Monolithic 3D Inc Automation methods for 3D integrated circuits and devices
US11030371B2 (en) 2013-04-15 2021-06-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US9021414B1 (en) 2013-04-15 2015-04-28 Monolithic 3D Inc. Automation for monolithic 3D devices
US11270055B1 (en) 2013-04-15 2022-03-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11487928B2 (en) 2013-04-15 2022-11-01 Monolithic 3D Inc. Automation for monolithic 3D devices
US11341309B1 (en) 2013-04-15 2022-05-24 Monolithic 3D Inc. Automation for monolithic 3D devices
US9000490B2 (en) 2013-04-19 2015-04-07 Xilinx, Inc. Semiconductor package having IC dice and voltage tuners
US9229328B2 (en) 2013-05-02 2016-01-05 Micron Technology, Inc. Methods of forming semiconductor device structures, and related semiconductor device structures
US9429769B2 (en) 2013-05-09 2016-08-30 Johnson & Johnson Vision Care, Inc. Ophthalmic device with thin film nanocrystal integrated circuits
US9484504B2 (en) 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
US9706647B2 (en) 2013-05-14 2017-07-11 Mc10, Inc. Conformal electronics including nested serpentine interconnects
US9449808B2 (en) * 2013-05-29 2016-09-20 Novellus Systems, Inc. Apparatus for advanced packaging applications
DE102013210668A1 (en) * 2013-06-07 2014-12-11 Würth Elektronik GmbH & Co. KG Method for producing an optical module
US20160329173A1 (en) 2013-06-12 2016-11-10 Rohinni, LLC Keyboard backlighting with deposited light-generating sources
WO2014209294A1 (en) * 2013-06-26 2014-12-31 Empire Technology Development Llc Micro-contact lithography systems forming optical modulators
US9748341B2 (en) * 2013-07-02 2017-08-29 General Electric Company Metal-oxide-semiconductor (MOS) devices with increased channel periphery
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
US9372123B2 (en) 2013-08-05 2016-06-21 Mc10, Inc. Flexible temperature sensor including conformable electronics
US9006584B2 (en) 2013-08-06 2015-04-14 Texas Instruments Incorporated High voltage polymer dielectric capacitor isolation device
US8987707B2 (en) * 2013-08-20 2015-03-24 Wisconsin Alumni Research Foundation Stretchable transistors with buckled carbon nanotube films as conducting channels
US8981363B1 (en) * 2013-09-03 2015-03-17 Universal Display Corporation Flexible substrate for OLED device
EP2845726A1 (en) * 2013-09-04 2015-03-11 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Electrically interconnecting foil
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides
US10820862B2 (en) 2013-10-02 2020-11-03 The Board Of Trustees Of The University Of Illinois Organ mounted electronics
JP2016532468A (en) 2013-10-07 2016-10-20 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． Conformal sensor system for detection and analysis
KR102229373B1 (en) * 2013-10-08 2021-03-17 한양대학교 산학협력단 Method for manufacturing flexible device, flexible device manufactured thereby, and junction device
FR3012255B1 (en) * 2013-10-17 2017-03-10 Commissariat Energie Atomique PROCESS FOR FORMING WRINKLES BY FUSIONING A FOUNDATION ON WHICH RESTORATES A CONSTRAINED LAYER
WO2015073734A1 (en) * 2013-11-13 2015-05-21 Massachusetts Institute Of Technology Thin-film parylene membrane transfer
US9171810B2 (en) * 2013-11-21 2015-10-27 Nxp B.V. Electronic device incorporating a randomized interconnection layer having a randomized conduction pattern
US9949691B2 (en) 2013-11-22 2018-04-24 Mc10, Inc. Conformal sensor systems for sensing and analysis of cardiac activity
US20150174613A1 (en) * 2013-12-19 2015-06-25 Sk Innovation Co., Ltd. Method for fabricating flexible nano structure
KR102192973B1 (en) * 2013-12-19 2020-12-18 에스케이이노베이션 주식회사 Sensor and method for fabricating the same
KR20150072292A (en) * 2013-12-19 2015-06-29 에스케이이노베이션 주식회사 Sensor and method for fabricating the same
US20150179738A1 (en) * 2013-12-19 2015-06-25 Sk Innovation Co., Ltd. Flexible nano structure
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9171719B2 (en) * 2013-12-30 2015-10-27 Shenzhen China Star Optoelectronics Technology Co., Ltd Method of defining poly-silicon growth direction
KR102180089B1 (en) 2013-12-30 2020-11-18 삼성디스플레이 주식회사 Method of manufacturing flexible substrate and method of manufacturing display device using the same
CN105874606B (en) 2014-01-06 2021-01-12 Mc10股份有限公司 Encapsulated conformal electronic systems and devices and methods of making and using the same
US9651718B2 (en) 2014-01-27 2017-05-16 Forelux Inc. Photonic apparatus with periodic structures
US10677965B2 (en) 2014-01-27 2020-06-09 Forelux Inc. Optical apparatus for non-visible light applications
US10297586B2 (en) 2015-03-09 2019-05-21 Monolithic 3D Inc. Methods for processing a 3D semiconductor device
US11107808B1 (en) 2014-01-28 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure
US11031394B1 (en) 2014-01-28 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure
EP3114911B1 (en) 2014-03-04 2023-05-03 Medidata Solutions, Inc. Multi-part flexible encapsulation housing for electronic devices
US9960175B2 (en) * 2014-03-06 2018-05-01 The Regents Of The University Of Michigan Field effect transistor memory device
US9664855B2 (en) 2014-03-07 2017-05-30 Skorpios Technologies, Inc. Wide shoulder, high order mode filter for thick-silicon waveguides
CN106062544B (en) 2014-03-12 2020-07-07 Mc10股份有限公司 Quantification of assay changes
KR20160143719A (en) * 2014-04-04 2016-12-14 더 리젠츠 오브 더 유니버시티 오브 미시간 Epitaxial lift-off processed gaas thin-film solar cells integrated with non-tracking mini-compound parabolic concentrators
US9489974B2 (en) 2014-04-11 2016-11-08 Seagate Technology Llc Method of fabricating a BPM template using hierarchical BCP density patterns
US10003173B2 (en) 2014-04-23 2018-06-19 Skorpios Technologies, Inc. Widely tunable laser control
TWI576715B (en) * 2014-05-02 2017-04-01 希諾皮斯股份有限公司 A non-transitory computer readable medium and a system for simulating integrated circuit processing
EP3149522A4 (en) 2014-05-27 2018-02-21 Skorpios Technologies, Inc. Waveguide mode expander using amorphous silicon
US9502625B2 (en) * 2014-06-06 2016-11-22 Rohinni, LLC Electrophotographic deposition of unpackaged semiconductor device
EP3158593A1 (en) 2014-06-18 2017-04-26 X-Celeprint Limited Systems and methods for preparing gan and related materials for micro assembly
CN110010750B (en) 2014-06-18 2021-11-09 艾克斯展示公司技术有限公司 Micro-assembly LED display
WO2015193433A2 (en) 2014-06-18 2015-12-23 X-Celeprint Limited Micro assembled high frequency devices and arrays
EP3157858B1 (en) 2014-06-18 2018-12-26 X-Celeprint Limited Systems and methods for controlling release of transferable semiconductor structures
US9865600B2 (en) 2014-06-18 2018-01-09 X-Celeprint Limited Printed capacitors
US9929053B2 (en) 2014-06-18 2018-03-27 X-Celeprint Limited Systems and methods for controlling release of transferable semiconductor structures
CN105431292B (en) * 2014-07-11 2018-06-08 英特尔公司 Flexible and stretchable electronic device and method
US11472171B2 (en) 2014-07-20 2022-10-18 X Display Company Technology Limited Apparatus and methods for micro-transfer-printing
US20170207193A1 (en) * 2014-07-20 2017-07-20 X-Celeprint Limited Apparatus and methods for micro-transfer-printing
US10252463B2 (en) 2014-07-22 2019-04-09 Nabil A. Amro Compact instrument with exchangeable modules for multiple microfabrication and/or nanofabrication methods
US9917240B2 (en) 2014-07-24 2018-03-13 Samsung Electronics Co., Ltd. Thermoelectric element, method of manufacturing the same and semiconductor device including the same
CN111703212B (en) 2014-08-07 2022-11-18 奥宝科技有限公司 LIFT printing system
WO2016025430A1 (en) 2014-08-11 2016-02-18 The Board Of Trustees Of The University Of Illinois Epidermal photonic systems and methods
WO2016025468A2 (en) 2014-08-11 2016-02-18 The Board Of Trustees Of The University Of Illinois Devices and related methods for epidermal characterization of biofluids
EP3179902B1 (en) 2014-08-11 2020-10-14 The Board of Trustees of the University of Illionis Epidermal device for analysis of temperature and thermal transport characteristics
US10615222B2 (en) 2014-08-21 2020-04-07 The University Of Hong Kong Flexible GAN light-emitting diodes
US9716082B2 (en) 2014-08-26 2017-07-25 X-Celeprint Limited Micro assembled hybrid displays and lighting elements
CN111128707B (en) * 2014-08-26 2023-06-16 株式会社尼康 Method for manufacturing element and transfer substrate
US9209142B1 (en) 2014-09-05 2015-12-08 Skorpios Technologies, Inc. Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal
US9773669B2 (en) * 2014-09-11 2017-09-26 Ramot At Tel-Aviv University Ltd. Method of fabricating a nanoribbon and applications thereof
KR101679833B1 (en) * 2014-09-11 2016-11-28 고려대학교 산학협력단 Thermoelectric generator module and method for producing the same
US9468050B1 (en) 2014-09-25 2016-10-11 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US20160093600A1 (en) 2014-09-25 2016-03-31 X-Celeprint Limited Compound micro-assembly strategies and devices
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US9818725B2 (en) 2015-06-01 2017-11-14 X-Celeprint Limited Inorganic-light-emitter display with integrated black matrix
US9537069B1 (en) 2014-09-25 2017-01-03 X-Celeprint Limited Inorganic light-emitting diode with encapsulating reflector
US9799719B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Active-matrix touchscreen
US9991163B2 (en) 2014-09-25 2018-06-05 X-Celeprint Limited Small-aperture-ratio display with electrical component
KR102416112B1 (en) * 2014-10-02 2022-07-04 삼성전자주식회사 Stretchable/foldable optoelectronic device, method of manufacturing the same and apparatus including the optoelectronic device
US9899330B2 (en) 2014-10-03 2018-02-20 Mc10, Inc. Flexible electronic circuits with embedded integrated circuit die
US10297572B2 (en) 2014-10-06 2019-05-21 Mc10, Inc. Discrete flexible interconnects for modules of integrated circuits
USD781270S1 (en) 2014-10-15 2017-03-14 Mc10, Inc. Electronic device having antenna
US10193004B2 (en) 2014-10-19 2019-01-29 Orbotech Ltd. LIFT printing of conductive traces onto a semiconductor substrate
US9942979B2 (en) * 2014-11-03 2018-04-10 Samsung Electronics Co., Ltd. Flexible printed circuit board
US10538028B2 (en) 2014-11-17 2020-01-21 The Board Of Trustees Of The University Of Illinois Deterministic assembly of complex, three-dimensional architectures by compressive buckling
US9607638B1 (en) 2014-11-19 2017-03-28 Seagate Technology Llc Recording head with an on-wafer integrated laser
US9576595B1 (en) 2014-11-19 2017-02-21 Seagate Technology Llc Transfer printing an epitaxial layer to a read/write head to form an integral laser
US10069029B1 (en) 2014-11-19 2018-09-04 Seagate Technology Llc Transfer-printed photonics
US10984821B1 (en) 2014-11-19 2021-04-20 Seagate Technology Llc Transfer-printed near-field transducer and heat sink
JP6369788B2 (en) 2014-11-27 2018-08-08 パナソニックＩｐマネジメント株式会社 Electronics structure
CN107111767B (en) 2014-12-23 2020-11-20 3M创新有限公司 Flexible radio frequency identification tag
US10890669B2 (en) * 2015-01-14 2021-01-12 General Electric Company Flexible X-ray detector and methods for fabricating the same
KR102340855B1 (en) * 2015-01-15 2021-12-17 삼성디스플레이 주식회사 Stretchable display device
US10633758B2 (en) 2015-01-19 2020-04-28 Orbotech Ltd. Printing of three-dimensional metal structures with a sacrificial support
US9823465B2 (en) * 2015-02-06 2017-11-21 The Board Of Trustees Of The University Of Illinois Hybrid organic-inorganic micromirror device and method of making a hybrid microdevice
EP3258837A4 (en) 2015-02-20 2018-10-10 Mc10, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation
US10398343B2 (en) 2015-03-02 2019-09-03 Mc10, Inc. Perspiration sensor
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
TWI565082B (en) * 2015-04-14 2017-01-01 鴻海精密工業股份有限公司 Thin film transistor and manufacturing method thereof
KR101605655B1 (en) * 2015-04-15 2016-03-22 한국과학기술원 Method for fabricating wafer structure having lateral junction
US11011507B1 (en) 2015-04-19 2021-05-18 Monolithic 3D Inc. 3D semiconductor device and structure
US11056468B1 (en) 2015-04-19 2021-07-06 Monolithic 3D Inc. 3D semiconductor device and structure
US10381328B2 (en) 2015-04-19 2019-08-13 Monolithic 3D Inc. Semiconductor device and structure
US10825779B2 (en) 2015-04-19 2020-11-03 Monolithic 3D Inc. 3D semiconductor device and structure
US9829631B2 (en) 2015-04-20 2017-11-28 Skorpios Technologies, Inc. Vertical output couplers for photonic devices
US9467190B1 (en) 2015-04-23 2016-10-11 Connor Sport Court International, Llc Mobile electronic device covering
US9421087B1 (en) 2015-04-27 2016-08-23 International Business Machines Corporation Artificial electronic skin
TW201712881A (en) * 2015-05-14 2017-04-01 立那工業股份有限公司 Metal micro-grid electrode for highly efficient SI microwire solar cells with over 80% fill factor
US9640715B2 (en) 2015-05-15 2017-05-02 X-Celeprint Limited Printable inorganic semiconductor structures
CA2931245C (en) 2015-05-26 2023-07-25 National Research Council Of Canada Metallic surface with karstified relief, forming same, and high surface area metallic electrochemical interface
US10677647B2 (en) 2015-06-01 2020-06-09 The Board Of Trustees Of The University Of Illinois Miniaturized electronic systems with wireless power and near-field communication capabilities
EP3304130B1 (en) 2015-06-01 2021-10-06 The Board of Trustees of the University of Illinois Alternative approach to uv sensing
US10102794B2 (en) 2015-06-09 2018-10-16 X-Celeprint Limited Distributed charge-pump power-supply system
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US10133426B2 (en) 2015-06-18 2018-11-20 X-Celeprint Limited Display with micro-LED front light
US11061276B2 (en) 2015-06-18 2021-07-13 X Display Company Technology Limited Laser array display
WO2017004576A1 (en) 2015-07-02 2017-01-05 The Board Of Trustees Of The University Of Illinois Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics
EP3322835A4 (en) 2015-07-09 2019-02-27 Orbotech Ltd. Control of lift ejection angle
WO2017015000A1 (en) 2015-07-17 2017-01-26 Mc10, Inc. Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers
US9704821B2 (en) 2015-08-11 2017-07-11 X-Celeprint Limited Stamp with structured posts
US10380834B2 (en) 2015-07-22 2019-08-13 Mark A. Litman Replaceable flexible electronic table top with display function for gaming tables
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
US10468363B2 (en) 2015-08-10 2019-11-05 X-Celeprint Limited Chiplets with connection posts
KR102288354B1 (en) * 2015-08-10 2021-08-11 삼성디스플레이 주식회사 Method for manufacturing flexible display apparatus
US9640108B2 (en) 2015-08-25 2017-05-02 X-Celeprint Limited Bit-plane pulse width modulated digital display system
WO2017031129A1 (en) 2015-08-19 2017-02-23 Mc10, Inc. Wearable heat flux devices and methods of use
US11956952B2 (en) 2015-08-23 2024-04-09 Monolithic 3D Inc. Semiconductor memory device and structure
US10380930B2 (en) 2015-08-24 2019-08-13 X-Celeprint Limited Heterogeneous light emitter display system
CN105047677B (en) * 2015-09-09 2017-12-12 京东方科技集团股份有限公司 Display base plate and preparation method thereof and display device
WO2017053329A1 (en) 2015-09-21 2017-03-30 Monolithic 3D Inc 3d semiconductor device and structure
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
WO2017059215A1 (en) 2015-10-01 2017-04-06 Mc10, Inc. Method and system for interacting with a virtual environment
US10522225B1 (en) 2015-10-02 2019-12-31 Monolithic 3D Inc. Semiconductor device with non-volatile memory
WO2017105581A2 (en) 2015-10-02 2017-06-22 Semprius, Inc. Wafer-integrated, ultra-low profile concentrated photovoltaics (cpv) for space applications
WO2017062508A1 (en) 2015-10-05 2017-04-13 Mc10, Inc. Method and System for Neuromodulation and Stimulation
WO2017068114A1 (en) 2015-10-22 2017-04-27 X-Celeprint Limited Structures and methods for controlling release of transferable semiconductor structures
US10847540B2 (en) 2015-10-24 2020-11-24 Monolithic 3D Inc. 3D semiconductor memory device and structure
US10418369B2 (en) 2015-10-24 2019-09-17 Monolithic 3D Inc. Multi-level semiconductor memory device and structure
US11296115B1 (en) 2015-10-24 2022-04-05 Monolithic 3D Inc. 3D semiconductor device and structure
US11114464B2 (en) 2015-10-24 2021-09-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11114427B2 (en) 2015-11-07 2021-09-07 Monolithic 3D Inc. 3D semiconductor processor and memory device and structure
US11937422B2 (en) 2015-11-07 2024-03-19 Monolithic 3D Inc. Semiconductor memory device and structure
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
US10570257B2 (en) 2015-11-16 2020-02-25 Applied Materials, Inc. Copolymerized high temperature bonding component
CN108349120B (en) 2015-11-22 2020-06-23 奥博泰克有限公司 Surface property control of printed three-dimensional structures
EP3380006B1 (en) * 2015-11-29 2022-04-27 Ramot at Tel-Aviv University Ltd. Sensing electrode and method of fabricating the same
CN105449011B (en) * 2015-12-08 2017-12-22 厦门理工学院 A kind of solar cell microlens array film and preparation method thereof
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
CN105405752B (en) * 2015-12-15 2018-09-04 苏州大学 A kind of production method of flexible nano wire grid type transparent conductive electrode
US9780318B2 (en) * 2015-12-15 2017-10-03 3M Innovative Properties Company Protective display film
US10091446B2 (en) 2015-12-23 2018-10-02 X-Celeprint Limited Active-matrix displays with common pixel control
US9786646B2 (en) 2015-12-23 2017-10-10 X-Celeprint Limited Matrix addressed device repair
US9930277B2 (en) 2015-12-23 2018-03-27 X-Celeprint Limited Serial row-select matrix-addressed system
US9928771B2 (en) 2015-12-24 2018-03-27 X-Celeprint Limited Distributed pulse width modulation control
WO2017124109A1 (en) 2016-01-15 2017-07-20 Rohinni, LLC Apparatus and method of backlighting through a cover on the apparatus
CN105548318A (en) * 2016-01-25 2016-05-04 深圳大学 Wearable electrochemical sensor electrode and wearable electrochemical sensor
CN105508889A (en) * 2016-02-01 2016-04-20 京东方科技集团股份有限公司 Light-emitting assembly and manufacturing method thereof
US11230471B2 (en) 2016-02-05 2022-01-25 X-Celeprint Limited Micro-transfer-printed compound sensor device
US10361677B2 (en) 2016-02-18 2019-07-23 X-Celeprint Limited Transverse bulk acoustic wave filter
CN105577109B (en) * 2016-02-18 2017-09-05 南通欧贝黎新能源电力股份有限公司 The manufacture method of the solar panel of integrated technotron inverter
US10200013B2 (en) 2016-02-18 2019-02-05 X-Celeprint Limited Micro-transfer-printed acoustic wave filter device
US10109753B2 (en) 2016-02-19 2018-10-23 X-Celeprint Limited Compound micro-transfer-printed optical filter device
WO2017147053A1 (en) 2016-02-22 2017-08-31 Mc10, Inc. System, device, and method for coupled hub and sensor node on-body acquisition of sensor information
US10277386B2 (en) 2016-02-22 2019-04-30 Mc10, Inc. System, devices, and method for on-body data and power transmission
US10217730B2 (en) 2016-02-25 2019-02-26 X-Celeprint Limited Efficiently micro-transfer printing micro-scale devices onto large-format substrates
US10150325B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid banknote with electronic indicia
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
US10150326B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid document with variable state
US10153256B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
US10917953B2 (en) 2016-03-21 2021-02-09 X Display Company Technology Limited Electrically parallel fused LEDs
US10223962B2 (en) 2016-03-21 2019-03-05 X-Celeprint Limited Display with fused LEDs
US11154201B2 (en) 2016-04-01 2021-10-26 The Board Of Trustees Of The University Of Illinois Implantable medical devices for optogenetics
US10103069B2 (en) 2016-04-01 2018-10-16 X-Celeprint Limited Pressure-activated electrical interconnection by micro-transfer printing
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
WO2017184705A1 (en) 2016-04-19 2017-10-26 Mc10, Inc. Method and system for measuring perspiration
US9997102B2 (en) 2016-04-19 2018-06-12 X-Celeprint Limited Wirelessly powered display and system
US10198890B2 (en) 2016-04-19 2019-02-05 X-Celeprint Limited Hybrid banknote with electronic indicia using near-field-communications
KR102417917B1 (en) * 2016-04-26 2022-07-07 삼성전자주식회사 Process system and operation method thereof
US10876210B1 (en) 2016-05-05 2020-12-29 Iowa State University Research Foundation, Inc. Tunable nano-structured inkjet printed graphene via UV pulsed-laser irradiation for electrochemical sensing
US10883814B2 (en) * 2016-05-09 2021-01-05 South Dakota Board Of Regents Highly stretchable strain sensor for human motion monitoring
US10360846B2 (en) 2016-05-10 2019-07-23 X-Celeprint Limited Distributed pulse-width modulation system with multi-bit digital storage and output device
US10037985B2 (en) 2016-05-17 2018-07-31 X-Celeprint Limited Compound micro-transfer-printed power transistor device
US10622700B2 (en) 2016-05-18 2020-04-14 X-Celeprint Limited Antenna with micro-transfer-printed circuit element
DE102016109459B4 (en) 2016-05-23 2019-06-13 X-Fab Semiconductor Foundries Ag Optimized transfer print (transfer printing) between carrier substrates as process, carrier substrate and micro-technical component
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
DE102016109950B3 (en) 2016-05-30 2017-09-28 X-Fab Semiconductor Foundries Ag Integrated circuit having a component applied by a transfer pressure and method for producing the integrated circuit
US9997501B2 (en) 2016-06-01 2018-06-12 X-Celeprint Limited Micro-transfer-printed light-emitting diode device
US10453826B2 (en) 2016-06-03 2019-10-22 X-Celeprint Limited Voltage-balanced serial iLED pixel and display
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
US10653342B2 (en) 2016-06-17 2020-05-19 The Board Of Trustees Of The University Of Illinois Soft, wearable microfluidic systems capable of capture, storage, and sensing of biofluids
US9966301B2 (en) * 2016-06-27 2018-05-08 New Fab, LLC Reduced substrate effects in monolithically integrated RF circuits
US10032827B2 (en) * 2016-06-29 2018-07-24 Applied Materials, Inc. Systems and methods for transfer of micro-devices
EP3267491A1 (en) * 2016-07-06 2018-01-10 Karlsruher Institut für Technologie Process for producing highly conductive, printable pastes from capillary suspensions
DE102016117030B4 (en) 2016-07-17 2018-07-05 X-Fab Semiconductor Foundries Ag Production of Semiconductor Structures on a Carrier Substrate Transferable by Transfer Print.
US10475876B2 (en) 2016-07-26 2019-11-12 X-Celeprint Limited Devices with a single metal layer
US10222698B2 (en) 2016-07-28 2019-03-05 X-Celeprint Limited Chiplets with wicking posts
US10593644B2 (en) 2016-07-29 2020-03-17 Industrial Technology Research Institute Apparatus for assembling devices
US11064609B2 (en) 2016-08-04 2021-07-13 X Display Company Technology Limited Printable 3D electronic structure
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
WO2018035261A1 (en) * 2016-08-17 2018-02-22 Arizona Board Of Regents On Behalf Of Arizona State University Nanostructured substrates for improved lift-off of iii-v thin films
US9670061B1 (en) 2016-09-12 2017-06-06 International Business Machines Corporation Flexible electronics for wearable healthcare sensors
US9822002B1 (en) 2016-09-12 2017-11-21 International Business Machines Corporation Flexible electronics for wearable healthcare sensors
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10157880B2 (en) 2016-10-03 2018-12-18 X-Celeprint Limited Micro-transfer printing with volatile adhesive layer
US11251149B2 (en) 2016-10-10 2022-02-15 Monolithic 3D Inc. 3D memory device and structure
US11812620B2 (en) 2016-10-10 2023-11-07 Monolithic 3D Inc. 3D DRAM memory devices and structures with control circuits
US11930648B1 (en) 2016-10-10 2024-03-12 Monolithic 3D Inc. 3D memory devices and structures with metal layers
US11869591B2 (en) 2016-10-10 2024-01-09 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11329059B1 (en) 2016-10-10 2022-05-10 Monolithic 3D Inc. 3D memory devices and structures with thinned single crystal substrates
US11711928B2 (en) 2016-10-10 2023-07-25 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
CN107039298B (en) * 2016-11-04 2019-12-24 厦门市三安光电科技有限公司 Transfer device, transfer method, manufacturing method, device and electronic apparatus for micro-component
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution
US10395966B2 (en) 2016-11-15 2019-08-27 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
TWI739949B (en) 2016-11-15 2021-09-21 愛爾蘭商艾克斯展示公司技術有限公司 Micro-transfer-printable flip-chip structures and methods
US10600671B2 (en) 2016-11-15 2020-03-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
CN109341515A (en) * 2016-11-22 2019-02-15 中国科学院力学研究所 A kind of mild curvatures sensor and preparation method thereof
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US10783917B1 (en) 2016-11-29 2020-09-22 Seagate Technology Llc Recording head with transfer-printed laser diode unit formed of non-self-supporting layers
CN108231534A (en) * 2016-12-15 2018-06-29 上海新微技术研发中心有限公司 Method for manufacturing flexible film
US10438859B2 (en) 2016-12-19 2019-10-08 X-Celeprint Limited Transfer printed device repair
US10297502B2 (en) 2016-12-19 2019-05-21 X-Celeprint Limited Isolation structure for micro-transfer-printable devices
US10832609B2 (en) 2017-01-10 2020-11-10 X Display Company Technology Limited Digital-drive pulse-width-modulated output system
EP3346238B1 (en) 2017-01-10 2022-03-02 Melexis Technologies SA Sensor with multiple sensing elements
US10566507B2 (en) 2017-01-12 2020-02-18 Rohinini, LLC Apparatus for high speed printing of semiconductor devices
US10544042B2 (en) * 2017-01-17 2020-01-28 International Business Machines Corporation Nanoparticle structure and process for manufacture
US10062588B2 (en) 2017-01-18 2018-08-28 Rohinni, LLC Flexible support substrate for transfer of semiconductor devices
US10332868B2 (en) 2017-01-26 2019-06-25 X-Celeprint Limited Stacked pixel structures
US10468391B2 (en) 2017-02-08 2019-11-05 X-Celeprint Limited Inorganic light-emitting-diode displays with multi-ILED pixels
CN206512268U (en) * 2017-03-10 2017-09-22 合肥鑫晟光电科技有限公司 A kind of vapor deposition source cover plate, vapor deposition source and evaporation coating device
US10396137B2 (en) 2017-03-10 2019-08-27 X-Celeprint Limited Testing transfer-print micro-devices on wafer
US10576268B2 (en) 2017-03-22 2020-03-03 International Business Machines Corporation High resolution brain-electronics interface
US11024608B2 (en) 2017-03-28 2021-06-01 X Display Company Technology Limited Structures and methods for electrical connection of micro-devices and substrates
US10073294B1 (en) * 2017-03-31 2018-09-11 Innolux Corporation Display device
US10020426B1 (en) * 2017-04-10 2018-07-10 Advanced Optoelectronic Technology, Inc Light emitting device
DE102017108136B4 (en) 2017-04-13 2019-03-14 X-Fab Semiconductor Foundries Ag Geometrically shaped components in a transfer printing arrangement and associated methods
US10957807B2 (en) * 2017-04-19 2021-03-23 The Board Of Trustees Of The University Of Alabama PLZT thin film capacitors apparatus with enhanced photocurrent and power conversion efficiency and method thereof
US10468397B2 (en) 2017-05-05 2019-11-05 X-Celeprint Limited Matrix addressed tiles and arrays
WO2018208964A1 (en) * 2017-05-09 2018-11-15 Forelux Inc. Optical apparatus for non-visible light applications
WO2018212871A2 (en) 2017-05-16 2018-11-22 Hanqing Jiang Three-dimensional soft electrode for lithium metal batteries
TW201901887A (en) 2017-05-24 2019-01-01 以色列商奧寶科技股份有限公司 Electrical interconnection circuit components on the substrate without prior patterning
US10777700B2 (en) 2017-06-02 2020-09-15 Wisconsin Alumni Research Foundation Optoelectronic devices based on thin single-crystalline semiconductor films and non-epitaxial optical cavities
US11084097B2 (en) 2017-06-23 2021-08-10 Applied Materials, Inc. Additive manufacturing with cell processing recipes
US10804880B2 (en) 2018-12-03 2020-10-13 X-Celeprint Limited Device structures with acoustic wave transducers and connection posts
US10943946B2 (en) 2017-07-21 2021-03-09 X Display Company Technology Limited iLED displays with substrate holes
US10692735B2 (en) 2017-07-28 2020-06-23 Lam Research Corporation Electro-oxidative metal removal in through mask interconnect fabrication
US10832935B2 (en) 2017-08-14 2020-11-10 X Display Company Technology Limited Multi-level micro-device tethers
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
CN107910446B (en) * 2017-08-25 2020-03-27 西安理工大学 Method for regulating ordered growth of organic film molecules by using magnetic field
EP3457154B1 (en) 2017-09-13 2020-04-08 Melexis Technologies SA Stray field rejection in magnetic sensors
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
JP2019062006A (en) * 2017-09-25 2019-04-18 株式会社東芝 Transport apparatus and transport method
US10290785B2 (en) * 2017-10-03 2019-05-14 Center For Integrated Smart Sensors Foundation Laminating structure of electronic device using transferring element, transferring apparatus for fabricating the electronic device and method for fabricating the electronic device
US20210190893A1 (en) 2017-10-06 2021-06-24 Melexis Technologies Nv Magnetic sensor sensitivity matching calibration
EP3467528B1 (en) 2017-10-06 2020-05-20 Melexis Technologies NV Magnetic sensor sensitivity matching calibration
EP3470862B1 (en) 2017-10-10 2022-03-02 Melexis Bulgaria Ltd. Sensor defect diagnostic circuit
US10319705B2 (en) * 2017-10-20 2019-06-11 Facebook Technologies, Llc Elastomeric layer fabrication for light emitting diodes
US10649148B2 (en) 2017-10-25 2020-05-12 Skorpios Technologies, Inc. Multistage spot size converter in silicon photonics
EP3477322B1 (en) 2017-10-27 2021-06-16 Melexis Technologies SA Magnetic sensor with integrated solenoid
US10836200B2 (en) 2017-11-13 2020-11-17 X Display Company Technology Limited Rigid micro-modules with ILED and light conductor
CN107768386B (en) 2017-11-16 2020-09-01 深圳市华星光电半导体显示技术有限公司 TFT array substrate, manufacturing method thereof and liquid crystal display panel
US10510937B2 (en) 2017-11-22 2019-12-17 X-Celeprint Limited Interconnection by lateral transfer printing
US10325791B1 (en) * 2017-12-13 2019-06-18 Facebook Technologies, Llc Formation of elastomeric layer on selective regions of light emitting device
US10539528B2 (en) 2017-12-19 2020-01-21 International Business Machines Corporation Stacked nanofluidics structure
US10297585B1 (en) 2017-12-21 2019-05-21 X-Celeprint Limited Multi-resolution compound micro-devices
KR101960265B1 (en) * 2017-12-29 2019-03-20 (재)한국나노기술원 Manufacturing Method of Solar Cell for Luminescent Solar Concentrator Device and Luminescent Solar Concentrator Devices using Solar Cell thereby
CN108054191B (en) 2018-01-11 2020-02-07 京东方科技集团股份有限公司 Display panel and display device
US11423928B1 (en) 2018-01-19 2022-08-23 Seagate Technology Llc Processing for forming single-grain near-field transducer
US10593827B2 (en) 2018-01-24 2020-03-17 X-Celeprint Limited Device source wafers with patterned dissociation interfaces
KR102100550B1 (en) * 2018-01-29 2020-04-13 충북대학교 산학협력단 Method and system for manufacturing copper electrode
WO2019151550A1 (en) * 2018-02-01 2019-08-08 엘지전자 주식회사 Display device using semiconductor light-emitting element and manufacturing method therefor
US10692996B1 (en) 2018-02-05 2020-06-23 United States Of America As Represented By The Secretary Of The Air Force Systems, methods and apparatus for radio frequency devices
US11069376B1 (en) 2018-02-21 2021-07-20 Seagate Technology Llc Waveguide with optical isolator for heat-assisted magnetic recording
US11189605B2 (en) 2018-02-28 2021-11-30 X Display Company Technology Limited Displays with transparent bezels
CN108493338B (en) * 2018-02-28 2020-04-21 中山大学 Malleable buckling structure organic thin film functional device and preparation method thereof
US10690920B2 (en) 2018-02-28 2020-06-23 X Display Company Technology Limited Displays with transparent bezels
WO2019185109A1 (en) * 2018-03-26 2019-10-03 Applied Materials, Inc. Method for producing a flexible device, flexible electronic device and flexible arrangement of a plurality of electronic devices
FR3079345B1 (en) * 2018-03-26 2020-02-21 Soitec METHOD FOR MANUFACTURING A SUBSTRATE FOR A RADIO FREQUENCY DEVICE
US11362229B2 (en) * 2018-04-04 2022-06-14 California Institute Of Technology Epitaxy-free nanowire cell process for the manufacture of photovoltaics
US11127612B2 (en) * 2018-04-25 2021-09-21 Micron Technology, Inc. Testing semiconductor devices based on warpage and associated methods
US10910355B2 (en) 2018-04-30 2021-02-02 X Display Company Technology Limited Bezel-free displays
US10505079B2 (en) 2018-05-09 2019-12-10 X-Celeprint Limited Flexible devices and methods using laser lift-off
US10410905B1 (en) 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
US10374034B1 (en) 2018-05-21 2019-08-06 International Business Machines Corporation Undercut control in isotropic wet etch processes
CN108511547A (en) * 2018-06-12 2018-09-07 汉能移动能源控股集团有限公司 Solar module, preparation method thereof and solar device
EP3581951A1 (en) 2018-06-12 2019-12-18 Melexis Bulgaria Ltd. Sensor saturation fault detection
US11295972B2 (en) 2018-06-12 2022-04-05 Korea Advanced Institute Of Science And Technology Layout structure between substrate, micro-LED array and micro-vacuum module for micro-LED array transfer using micro-vacuum module, and method for manufacturing micro-LED display using the same
CN108831893B (en) 2018-06-14 2021-05-18 京东方科技集团股份有限公司 Array substrate, manufacturing method of array substrate and display panel
US10832934B2 (en) 2018-06-14 2020-11-10 X Display Company Technology Limited Multi-layer tethers for micro-transfer printing
US10748957B1 (en) * 2018-06-21 2020-08-18 Hrl Laboratories, Llc Method of manufacturing a curved semiconductor die
CN108807570B (en) * 2018-06-28 2020-04-14 华南师范大学 Preparation method of ZnO micron line array ultraviolet detector embedded in flexible substrate
US10714001B2 (en) 2018-07-11 2020-07-14 X Display Company Technology Limited Micro-light-emitting-diode displays
CN109136858B (en) * 2018-07-31 2020-09-25 电子科技大学 Oxide film stripping method based on two-dimensional material
RU2767470C1 (en) * 2018-08-07 2022-03-17 Е Инк Корпорэйшн Flexible encapsulated electrooptical media
US10796971B2 (en) 2018-08-13 2020-10-06 X Display Company Technology Limited Pressure-activated electrical interconnection with additive repair
WO2020041522A1 (en) 2018-08-21 2020-02-27 California Institute Of Technology Windows implementing effectively transparent conductors and related methods of manufacturing
US11152536B2 (en) 2018-09-17 2021-10-19 The Board Of Trustees Of The University Of Illinois Photoresist contact patterning of quantum dot films
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
DE102018217087B4 (en) * 2018-10-05 2020-07-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Electrical cable or electrical wire and wire-shaped electrical connecting element with a semiconducting functional section
KR102536844B1 (en) * 2018-10-15 2023-05-30 삼성디스플레이 주식회사 Display apparatus and method of manufacturing the same
US10573544B1 (en) 2018-10-17 2020-02-25 X-Celeprint Limited Micro-transfer printing with selective component removal
US10796938B2 (en) 2018-10-17 2020-10-06 X Display Company Technology Limited Micro-transfer printing with selective component removal
KR102116728B1 (en) * 2018-10-25 2020-05-29 엘지전자 주식회사 Self assembly method and device for semiconductor light emitting device
EP3647741B1 (en) 2018-10-29 2022-08-03 Melexis Bulgaria Ltd. Sensor diagnostic device and method
US11923472B2 (en) 2018-11-05 2024-03-05 The United States Of America As Represented By The Secretary Of The Army Deformable array of semiconductor devices
US11062946B2 (en) 2018-11-08 2021-07-13 International Business Machines Corporation Self-aligned contact on a semiconductor device
CN109256442B (en) * 2018-11-15 2020-05-22 安徽省华腾农业科技有限公司 Preparation method of thin film battery and thin film battery
US11482979B2 (en) 2018-12-03 2022-10-25 X Display Company Technology Limited Printing components over substrate post edges
US11274035B2 (en) 2019-04-24 2022-03-15 X-Celeprint Limited Overhanging device structures and related methods of manufacture
US20210002128A1 (en) 2018-12-03 2021-01-07 X-Celeprint Limited Enclosed cavity structures
US11528808B2 (en) 2018-12-03 2022-12-13 X Display Company Technology Limited Printing components to substrate posts
US10790173B2 (en) 2018-12-03 2020-09-29 X Display Company Technology Limited Printed components on substrate posts
US11282786B2 (en) 2018-12-12 2022-03-22 X Display Company Technology Limited Laser-formed interconnects for redundant devices
WO2020132559A1 (en) * 2018-12-21 2020-06-25 The Johns Hopkins University Melanin based bio-composites for 3d printing
US11483937B2 (en) 2018-12-28 2022-10-25 X Display Company Technology Limited Methods of making printed structures
EP3682941B1 (en) * 2019-01-18 2021-11-10 Ecole Polytechnique Federale De Lausanne (EPFL) EPFL-TTO Biomedical device comprising a mechanically adaptive member
US11322460B2 (en) 2019-01-22 2022-05-03 X-Celeprint Limited Secure integrated-circuit systems
US11251139B2 (en) 2019-01-22 2022-02-15 X-Celeprint Limited Secure integrated-circuit systems
WO2020159856A1 (en) * 2019-01-28 2020-08-06 Amerasia International Technology, Inc. Semiconductor wafer processing system and method
US11360263B2 (en) 2019-01-31 2022-06-14 Skorpios Technologies. Inc. Self-aligned spot size converter
US11088121B2 (en) 2019-02-13 2021-08-10 X Display Company Technology Limited Printed LED arrays with large-scale uniformity
US10748793B1 (en) 2019-02-13 2020-08-18 X Display Company Technology Limited Printing component arrays with different orientations
US11398399B2 (en) 2019-03-08 2022-07-26 X Display Company Technology Limited Components with backside adhesive layers
US11094870B2 (en) 2019-03-12 2021-08-17 X Display Company Technology Limited Surface-mountable pixel packages and pixel engines
US11164934B2 (en) 2019-03-12 2021-11-02 X Display Company Technology Limited Tiled displays with black-matrix support screens
US11805597B2 (en) * 2019-03-12 2023-10-31 Carnegie Mellon University Liquid metal circuits and methods of making the same
GB201907270D0 (en) 2019-03-14 2019-07-10 Imp College Innovations Ltd Component for a stretchable electronic device
US11763864B2 (en) 2019-04-08 2023-09-19 Monolithic 3D Inc. 3D memory semiconductor devices and structures with bit-line pillars
US11296106B2 (en) 2019-04-08 2022-04-05 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11158652B1 (en) 2019-04-08 2021-10-26 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US10892016B1 (en) 2019-04-08 2021-01-12 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11018156B2 (en) 2019-04-08 2021-05-25 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US10714374B1 (en) 2019-05-09 2020-07-14 X Display Company Technology Limited High-precision printed structures
CN113841305A (en) 2019-05-10 2021-12-24 3M创新有限公司 Removable electrical connector and apparatus
US11295982B2 (en) 2019-06-11 2022-04-05 International Business Machines Corporation Forming ultra-thin chips for flexible electronics applications
US10944027B2 (en) 2019-06-14 2021-03-09 X Display Company Technology Limited Pixel modules with controllers and light emitters
US11488943B2 (en) 2019-06-14 2022-11-01 X Display Company Technology Limited Modules with integrated circuits and devices
DE102019118270B4 (en) 2019-07-05 2021-10-07 X-Fab Semiconductor Foundries Gmbh Process for the production of semiconductor components to increase the yield in microtransfer printing
US11652082B2 (en) 2019-08-05 2023-05-16 X Display Company Technology Limited Particle capture using transfer stamp
US11101417B2 (en) 2019-08-06 2021-08-24 X Display Company Technology Limited Structures and methods for electrically connecting printed components
US20220285309A1 (en) 2019-08-26 2022-09-08 X-Celeprint Limited Variable stiffness modules
US11626856B2 (en) 2019-10-30 2023-04-11 X-Celeprint Limited Non-linear tethers for suspended devices
US11637540B2 (en) 2019-10-30 2023-04-25 X-Celeprint Limited Non-linear tethers for suspended devices
US11127889B2 (en) 2019-10-30 2021-09-21 X Display Company Technology Limited Displays with unpatterned layers of light-absorbing material
US11869880B2 (en) 2019-11-05 2024-01-09 Samsung Electronics Co., Ltd. Method of transferring micro-light emitting diode for LED display
DE102020107288A1 (en) * 2019-12-10 2021-06-10 X-Fab Semiconductor Foundries Gmbh Semiconductor component and method for manufacturing a semiconductor component
US11062936B1 (en) 2019-12-19 2021-07-13 X Display Company Technology Limited Transfer stamps with multiple separate pedestals
US11315909B2 (en) 2019-12-20 2022-04-26 X Display Company Technology Limited Displays with embedded light emitters
KR102257552B1 (en) * 2019-12-24 2021-05-27 한국세라믹기술원 Manufacturing method of arrayed tip based pattern lithography device
US11037912B1 (en) 2020-01-31 2021-06-15 X Display Company Technology Limited LED color displays with multiple LEDs connected in series and parallel in different sub-pixels of a pixel
US11387178B2 (en) 2020-03-06 2022-07-12 X-Celeprint Limited Printable 3D electronic components and structures
US11464451B1 (en) 2020-03-11 2022-10-11 Huxley Medical, Inc. Patch for improved biometric data capture and related processes
US10963607B1 (en) * 2020-03-16 2021-03-30 Ansys, Inc. Determining mechanical reliability of electronic packages assembled with thermal pads
US11850874B2 (en) * 2020-03-30 2023-12-26 X Display Company Technology Limited Micro-transfer printing stamps and components
WO2021219833A2 (en) 2020-05-01 2021-11-04 X-Celeprint Limited Hybrid documents with electronic indicia and piezoelectric power components usable in such documents
WO2021224284A1 (en) 2020-05-05 2021-11-11 X-Celeprint Limited Enclosed cavity structures
US11088007B1 (en) 2020-05-07 2021-08-10 X-Celeprint Limited Component tethers with spacers
US11495561B2 (en) 2020-05-11 2022-11-08 X Display Company Technology Limited Multilayer electrical conductors for transfer printing
US11538849B2 (en) 2020-05-28 2022-12-27 X Display Company Technology Limited Multi-LED structures with reduced circuitry
US11088093B1 (en) 2020-05-28 2021-08-10 X-Celeprint Limited Micro-component anti-stiction structures
US11777065B2 (en) 2020-05-29 2023-10-03 X Display Company Technology Limited White-light-emitting LED structures
US11353381B1 (en) * 2020-06-09 2022-06-07 Applied Materials, Inc. Portable disc to measure chemical gas contaminants within semiconductor equipment and clean room
CN113873757B (en) * 2020-06-30 2023-04-04 联策科技股份有限公司 Horizontal wet processing method for flexible substrate
US11316086B2 (en) 2020-07-10 2022-04-26 X Display Company Technology Limited Printed structures with electrical contact having reflowable polymer core
US11282439B2 (en) 2020-07-16 2022-03-22 X Display Company Technology Limited Analog pulse-width-modulation control circuits
US11742450B2 (en) 2020-08-31 2023-08-29 X Display Company Technology Limited Hybrid electro-optically controlled matrix-addressed systems
US11952266B2 (en) 2020-10-08 2024-04-09 X-Celeprint Limited Micro-device structures with etch holes
US11495172B2 (en) 2020-10-19 2022-11-08 X Display Company Technology Limited Pixel group and column token display architectures
US11488518B2 (en) 2020-10-19 2022-11-01 X Display Company Technology Limited Pixel group and column token display architectures
AU2021371145A1 (en) * 2020-10-27 2023-06-15 The Regents Of The University Of Michigan Water splitting device protection
US11152395B1 (en) 2020-11-12 2021-10-19 X-Celeprint Limited Monolithic multi-FETs
US11588075B2 (en) 2020-11-24 2023-02-21 X Display Company Technology Limited Displays with interpolated pixels
US11490519B2 (en) 2021-01-11 2022-11-01 X-Celeprint Limited Printed stacked micro-devices
US11328744B1 (en) 2021-01-29 2022-05-10 Seagate Technology Llc On-wafer integrated laser for heat-assisted magnetic recording
KR20220122880A (en) * 2021-02-26 2022-09-05 삼성전자주식회사 Stretchable sensor and method of manufacturing the same and wearable device
US11894399B2 (en) 2021-03-02 2024-02-06 Wisconsin Alumni Research Foundation Compact hyperspectral spectrometers based on semiconductor nanomembranes
US11430375B1 (en) 2021-03-19 2022-08-30 X Display Company Technology Limited Pulse-density-modulation pixel control circuits and devices including them
US11660005B1 (en) 2021-06-04 2023-05-30 Huxley Medical, Inc. Processing and analyzing biometric data
US11386826B1 (en) 2021-06-22 2022-07-12 X Display Company Technology Limited Flat-panel pixel arrays with signal regeneration
US11568796B1 (en) 2021-07-29 2023-01-31 X Display Company Technology Limited Displays with current-controlled pixel clusters
WO2023016625A1 (en) 2021-08-09 2023-02-16 X-Celeprint Limited Integrated-circuit module collection and deposition
US11862607B2 (en) 2021-08-16 2024-01-02 Micron Technology, Inc. Composite dielectric structures for semiconductor die assemblies and associated systems and methods
CN113905561B (en) * 2021-10-11 2023-02-24 Oppo广东移动通信有限公司 Shell with texture pattern, processing method thereof and electronic equipment
WO2023115191A1 (en) * 2021-12-20 2023-06-29 University Of Ottawa Polymer capacitive sensors and methods of uses thereof
US11592933B1 (en) 2022-01-07 2023-02-28 X Display Company Technology Limited Displays with integrated touch screens
KR102635505B1 (en) * 2022-02-16 2024-02-07 연세대학교 산학협력단 Stretchable display based on 3 dimensional structure and manufacturing method thereof
US11906133B2 (en) 2022-03-31 2024-02-20 Alliance Sports Group, L.P. Outdoor lighting apparatus
US11568803B1 (en) 2022-04-27 2023-01-31 X Display Company Technology Limited Multi-row buffering for active-matrix cluster displays
WO2023217637A1 (en) 2022-05-09 2023-11-16 X-Celeprint Limited High-precision printed structures and methods of making
CN115320271B (en) * 2022-08-04 2023-06-16 中国科学院上海微系统与信息技术研究所 Transfer printing method of semiconductor film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766670A (en) * 1987-02-02 1988-08-30 International Business Machines Corporation Full panel electronic packaging structure and method of making same
US20030227116A1 (en) * 2002-04-29 2003-12-11 Marcus Halik Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications

Family Cites Families (470)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3743148A (en) * 1971-03-08 1973-07-03 H Carlson Wafer breaker
US4058418A (en) 1974-04-01 1977-11-15 Solarex Corporation Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
US3949410A (en) 1975-01-23 1976-04-06 International Business Machines Corporation Jet nozzle structure for electrohydrodynamic droplet formation and ink jet printing system therewith
US4487162A (en) 1980-11-25 1984-12-11 Cann Gordon L Magnetoplasmadynamic apparatus for the separation and deposition of materials
US4471003A (en) 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
US4392451A (en) 1980-12-31 1983-07-12 The Boeing Company Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI2 chalcopyrite compounds
US4761335A (en) * 1985-03-07 1988-08-02 National Starch And Chemical Corporation Alpha-particle protection of semiconductor devices
US4855017A (en) 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US4784720A (en) 1985-05-03 1988-11-15 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US4663828A (en) 1985-10-11 1987-05-12 Energy Conversion Devices, Inc. Process and apparatus for continuous production of lightweight arrays of photovoltaic cells
CA1292572C (en) 1988-10-25 1991-11-26 Fernando C. Lebron Cardiac mapping system simulator
US5178957A (en) 1989-05-02 1993-01-12 Minnesota Mining And Manufacturing Company Noble metal-polymer composites and flexible thin-film conductors prepared therefrom
US5086785A (en) 1989-08-10 1992-02-11 Abrams/Gentille Entertainment Inc. Angular displacement sensors
JPH03220787A (en) 1990-01-26 1991-09-27 Yazaki Corp Flexible circuit body and manufacture thereof
US5118400A (en) 1990-01-29 1992-06-02 Spire Corporation Method of making biocompatible electrodes
US5108819A (en) 1990-02-14 1992-04-28 Eli Lilly And Company Thin film electrical component
DE59109246D1 (en) 1990-05-03 2003-04-03 Hoffmann La Roche Micro-optical sensor
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5475514A (en) 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US5300788A (en) 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US5528397A (en) 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5204144A (en) 1991-05-10 1993-04-20 Celestech, Inc. Method for plasma deposition on apertured substrates
US5246003A (en) 1991-08-28 1993-09-21 Nellcor Incorporated Disposable pulse oximeter sensor
JPH06118441A (en) * 1991-11-05 1994-04-28 Tadanobu Kato Display cell
US5313094A (en) 1992-01-28 1994-05-17 International Business Machines Corportion Thermal dissipation of integrated circuits using diamond paths
US5465009A (en) * 1992-04-08 1995-11-07 Georgia Tech Research Corporation Processes and apparatus for lift-off and bonding of materials and devices
US5687737A (en) 1992-10-09 1997-11-18 Washington University Computerized three-dimensional cardiac mapping with interactive visual displays
JPH06163365A (en) 1992-11-25 1994-06-10 Nec Corp Manufacture of semiconductor device
DE4241045C1 (en) 1992-12-05 1994-05-26 Bosch Gmbh Robert Process for anisotropic etching of silicon
TW253999B (en) * 1993-06-30 1995-08-11 Hitachi Cable
US6687345B1 (en) * 1993-08-25 2004-02-03 Symbol Technologies, Inc. Wireless telephone for acquiring data encoded in bar code indicia
US5793107A (en) 1993-10-29 1998-08-11 Vlsi Technology, Inc. Polysilicon pillar heat sinks for semiconductor on insulator circuits
US5822436A (en) * 1996-04-25 1998-10-13 Digimarc Corporation Photographic products and methods employing embedded information
US5427096A (en) 1993-11-19 1995-06-27 Cmc Assemblers, Inc. Water-degradable electrode
US5824186A (en) 1993-12-17 1998-10-20 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US5904545A (en) * 1993-12-17 1999-05-18 The Regents Of The University Of California Apparatus for fabricating self-assembling microstructures
US6864570B2 (en) 1993-12-17 2005-03-08 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US5545291A (en) * 1993-12-17 1996-08-13 The Regents Of The University Of California Method for fabricating self-assembling microstructures
US5514242A (en) 1993-12-30 1996-05-07 Saint Gobain/Norton Industrial Ceramics Corporation Method of forming a heat-sinked electronic component
EP0676814B1 (en) 1994-04-06 2006-03-22 Denso Corporation Process of producing trench semiconductor device
US5434751A (en) 1994-04-11 1995-07-18 Martin Marietta Corporation Reworkable high density interconnect structure incorporating a release layer
US5753529A (en) 1994-05-05 1998-05-19 Siliconix Incorporated Surface mount and flip chip technology for total integrated circuit isolation
US5525815A (en) 1994-10-03 1996-06-11 General Electric Company Diamond film structure with high thermal conductivity
US5767578A (en) 1994-10-12 1998-06-16 Siliconix Incorporated Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation
US5625471A (en) 1994-11-02 1997-04-29 Litel Instruments Dual plate holographic imaging technique and masks
US5686697A (en) 1995-01-06 1997-11-11 Metatech Corporation Electrical circuit suspension system
US5917534A (en) 1995-06-29 1999-06-29 Eastman Kodak Company Light-emitting diode arrays with integrated photodetectors formed as a monolithic device and methods and apparatus for using same
US6459418B1 (en) 1995-07-20 2002-10-01 E Ink Corporation Displays combining active and non-active inks
US6639578B1 (en) 1995-07-20 2003-10-28 E Ink Corporation Flexible displays
US6505160B1 (en) * 1995-07-27 2003-01-07 Digimarc Corporation Connected audio and other media objects
GB9611437D0 (en) 1995-08-03 1996-08-07 Secr Defence Biomaterial
EP0784542B1 (en) * 1995-08-04 2001-11-28 International Business Machines Corporation Stamp for a lithographic process
US6518168B1 (en) 1995-08-18 2003-02-11 President And Fellows Of Harvard College Self-assembled monolayer directed patterning of surfaces
US5772905A (en) 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US5822432A (en) * 1996-01-17 1998-10-13 The Dice Company Method for human-assisted random key generation and application for digital watermark system
GB9601289D0 (en) 1996-01-23 1996-03-27 Nimbus Manufacturing Uk Limite Manufacture of optical data storage disc
US5790151A (en) 1996-03-27 1998-08-04 Imaging Technology International Corp. Ink jet printhead and method of making
US6784023B2 (en) 1996-05-20 2004-08-31 Micron Technology, Inc. Method of fabrication of stacked semiconductor devices
US5889868A (en) * 1996-07-02 1999-03-30 The Dice Company Optimization methods for the insertion, protection, and detection of digital watermarks in digitized data
US5710057A (en) 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
JP4619462B2 (en) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 Thin film element transfer method
US6096155A (en) 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
KR100616479B1 (en) 1996-10-17 2006-08-28 세이코 엡슨 가부시키가이샤 Semiconductor device, method for manufacturing the same, circuit board, and flexible substrate
DE19643550A1 (en) 1996-10-24 1998-05-14 Leybold Systems Gmbh Light-transparent, heat radiation reflecting layer system
US5691245A (en) 1996-10-28 1997-11-25 He Holdings, Inc. Methods of forming two-sided HDMI interconnect structures
US6386453B1 (en) * 1996-11-25 2002-05-14 Metrologic Instruments, Inc. System and method for carrying out information-related transactions
SG67458A1 (en) * 1996-12-18 1999-09-21 Canon Kk Process for producing semiconductor article
DE69738307T2 (en) * 1996-12-27 2008-10-02 Canon K.K. Manufacturing method of a semiconductor device and manufacturing method of a solar cell
US6980196B1 (en) 1997-03-18 2005-12-27 Massachusetts Institute Of Technology Printable electronic display
US6059812A (en) 1997-03-21 2000-05-09 Schneider (Usa) Inc. Self-expanding medical device for centering radioactive treatment sources in body vessels
US5998291A (en) 1997-04-07 1999-12-07 Raytheon Company Attachment method for assembly of high density multiple interconnect structures
AUPO662497A0 (en) 1997-05-05 1997-05-29 Cardiac Crc Nominees Pty Limited An epicardial electrode array
US6381698B1 (en) * 1997-05-21 2002-04-30 At&T Corp System and method for providing assurance to a host that a piece of software possesses a particular property
US5907189A (en) 1997-05-29 1999-05-25 Lsi Logic Corporation Conformal diamond coating for thermal improvement of electronic packages
JPH1126344A (en) 1997-06-30 1999-01-29 Hitachi Ltd Method and device for forming pattern, and manufacture of semiconductor device
JPH1126733A (en) 1997-07-03 1999-01-29 Seiko Epson Corp Transfer method of thin film device, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display and electronic equipment
DE19829309B4 (en) 1997-07-04 2008-02-07 Fuji Electric Co., Ltd., Kawasaki Process for producing a thermal oxide film on silicon carbide
US6024702A (en) 1997-09-03 2000-02-15 Pmt Corporation Implantable electrode manufactured with flexible printed circuit
US5928001A (en) 1997-09-08 1999-07-27 Motorola, Inc. Surface mountable flexible interconnect
FR2769640B1 (en) * 1997-10-15 1999-12-17 Sgs Thomson Microelectronics IMPROVING THE MECHANICAL STRENGTH OF A MONOCRYSTALLINE SILICON WAFER
DE19748173A1 (en) 1997-10-31 1999-05-06 Ahlers Horst Dr Ing Habil Biodegradable electronic components
US6171730B1 (en) 1997-11-07 2001-01-09 Canon Kabushiki Kaisha Exposure method and exposure apparatus
JP3406207B2 (en) * 1997-11-12 2003-05-12 シャープ株式会社 Method of forming transistor array panel for display
US6037984A (en) * 1997-12-24 2000-03-14 Sarnoff Corporation Method and apparatus for embedding a watermark into a digital image or image sequence
US6393060B1 (en) * 1997-12-31 2002-05-21 Lg Electronics Inc. Video coding and decoding method and its apparatus
JP3219043B2 (en) 1998-01-07 2001-10-15 日本電気株式会社 Semiconductor device packaging method and semiconductor device
US5955781A (en) 1998-01-13 1999-09-21 International Business Machines Corporation Embedded thermal conductors for semiconductor chips
US6513118B1 (en) * 1998-01-27 2003-01-28 Canon Kabushiki Kaisha Electronic watermarking method, electronic information distribution system, image filing apparatus and storage medium therefor
JPH11232286A (en) * 1998-02-12 1999-08-27 Hitachi Ltd Information retrieving system
GB9805214D0 (en) 1998-03-11 1998-05-06 Univ Glasgow Cell adhesion
US6316283B1 (en) 1998-03-25 2001-11-13 Asulab Sa Batch manufacturing method for photovoltaic cells
JP3176580B2 (en) 1998-04-09 2001-06-18 太陽誘電株式会社 Electronic component mounting method and mounting device
US6557103B1 (en) * 1998-04-13 2003-04-29 The United States Of America As Represented By The Secretary Of The Army Spread spectrum image steganography
US6057212A (en) 1998-05-04 2000-05-02 International Business Machines Corporation Method for making bonded metal back-plane substrates
KR100275730B1 (en) * 1998-05-11 2000-12-15 윤종용 Trench isolating method
KR100351485B1 (en) * 1998-10-08 2002-09-05 마츠시타 덴끼 산교 가부시키가이샤 Data processor and data recorded medium
US6209094B1 (en) * 1998-10-14 2001-03-27 Liquid Audio Inc. Robust watermark method and apparatus for digital signals
WO2000030084A1 (en) 1998-11-16 2000-05-25 Cambridge Scientific, Inc. Biopolymer-based holographic optical element
US6097984A (en) 1998-11-25 2000-08-01 Medtronic, Inc. System and method of stimulation for treating gastro-esophageal reflux disease
US6563935B1 (en) * 1998-12-02 2003-05-13 Hitachi, Ltd. Method of extracting digital watermark information and method of judging bit value of digital watermark information
US6236883B1 (en) 1999-02-03 2001-05-22 The Trustees Of Columbia University In The City Of New York Methods and systems for localizing reentrant circuits from electrogram features
US6281038B1 (en) 1999-02-05 2001-08-28 Alien Technology Corporation Methods for forming assemblies
US6274508B1 (en) * 1999-02-05 2001-08-14 Alien Technology Corporation Apparatuses and methods used in forming assemblies
US6555408B1 (en) 1999-02-05 2003-04-29 Alien Technology Corporation Methods for transferring elements from a template to a substrate
US6683663B1 (en) 1999-02-05 2004-01-27 Alien Technology Corporation Web fabrication of devices
US6850312B2 (en) * 1999-03-16 2005-02-01 Alien Technology Corporation Apparatuses and methods for flexible displays
JP2002536695A (en) * 1999-02-05 2002-10-29 エイリアン・テクノロジイ・コーポレーション Apparatus and method for forming an assembly
US6606079B1 (en) * 1999-02-16 2003-08-12 Alien Technology Corporation Pixel integrated circuit
US6291896B1 (en) 1999-02-16 2001-09-18 Alien Technology Corporation Functionally symmetric integrated circuit die
US6380729B1 (en) * 1999-02-16 2002-04-30 Alien Technology Corporation Testing integrated circuit dice
US6752505B2 (en) 1999-02-23 2004-06-22 Solid State Opto Limited Light redirecting films and film systems
US6334960B1 (en) 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6316278B1 (en) 1999-03-16 2001-11-13 Alien Technology Corporation Methods for fabricating a multiple modular assembly
US6468638B2 (en) * 1999-03-16 2002-10-22 Alien Technology Corporation Web process interconnect in electronic assemblies
KR100434537B1 (en) 1999-03-31 2004-06-05 삼성전자주식회사 Multi layer wafer with thick sacrificial layer and fabricating method thereof
US6433401B1 (en) 1999-04-06 2002-08-13 Analog Devices Imi, Inc. Microfabricated structures with trench-isolation using bonded-substrates and cavities
EE04249B1 (en) 1999-04-21 2004-02-16 Asper O� Method for reading biopolymer matrix and fluorescence detector
US6276775B1 (en) * 1999-04-29 2001-08-21 Hewlett-Packard Company Variable drop mass inkjet drop generator
US6225149B1 (en) 1999-05-03 2001-05-01 Feng Yuan Gan Methods to fabricate thin film transistors and circuits
US6150602A (en) 1999-05-25 2000-11-21 Hughes Electronics Corporation Large area solar cell extended life interconnect
JP3447619B2 (en) * 1999-06-25 2003-09-16 株式会社東芝 Active matrix substrate manufacturing method, intermediate transfer substrate
JP4948726B2 (en) 1999-07-21 2012-06-06 イー インク コーポレイション Preferred method of making an electronic circuit element for controlling an electronic display
US6517995B1 (en) 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
AU1348901A (en) 1999-10-28 2001-05-08 P1 Diamond, Inc. Improved diamond thermal management components
US6420266B1 (en) 1999-11-02 2002-07-16 Alien Technology Corporation Methods for creating elements of predetermined shape and apparatuses using these elements
US6479395B1 (en) 1999-11-02 2002-11-12 Alien Technology Corporation Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings
US6623579B1 (en) 1999-11-02 2003-09-23 Alien Technology Corporation Methods and apparatus for fluidic self assembly
US6527964B1 (en) * 1999-11-02 2003-03-04 Alien Technology Corporation Methods and apparatuses for improved flow in performing fluidic self assembly
US6451191B1 (en) 1999-11-18 2002-09-17 3M Innovative Properties Company Film based addressable programmable electronic matrix articles and methods of manufacturing and using the same
JP4104800B2 (en) * 1999-12-08 2008-06-18 三菱電機株式会社 Liquid crystal display device and TFT panel
US6385329B1 (en) * 2000-02-14 2002-05-07 Digimarc Corporation Wavelet domain watermarks
WO2001066833A1 (en) 2000-03-06 2001-09-13 University Of Connecticut Apparatus and method for fabrication of photonic crystals
JP4360015B2 (en) * 2000-03-17 2009-11-11 セイコーエプソン株式会社 Method for manufacturing organic EL display, method for arranging semiconductor element, method for manufacturing semiconductor device
JP2002057882A (en) * 2000-04-21 2002-02-22 Sony Corp Apparatus and method for embedding information, image processor and processing method, content processor and processing method, monitor and monitoring method, and storage medium
KR20010097834A (en) * 2000-04-26 2001-11-08 이영아 Realtime digital watermarking system and operating method in encrypt
JP4489247B2 (en) * 2000-05-18 2010-06-23 沖電気工業株式会社 Digital content distribution system and distribution method.
US6521542B1 (en) * 2000-06-14 2003-02-18 International Business Machines Corp. Method for forming dual damascene structure
US6787052B1 (en) * 2000-06-19 2004-09-07 Vladimir Vaganov Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
CN1214286C (en) 2000-06-22 2005-08-10 皇家菲利浦电子有限公司 Method of forming optical images, mask for use in this method, method of manufacturing a device using this method, and apparatus for carrying out this method
US6403397B1 (en) 2000-06-28 2002-06-11 Agere Systems Guardian Corp. Process for fabricating organic semiconductor device involving selective patterning
JP4120184B2 (en) 2000-06-30 2008-07-16 セイコーエプソン株式会社 Mounting microstructure and optical transmission device
WO2002003142A2 (en) 2000-06-30 2002-01-10 President And Fellows Of Harvard College Electric microcontact printing method and apparatus
US6723576B2 (en) * 2000-06-30 2004-04-20 Seiko Epson Corporation Disposing method for semiconductor elements
WO2002008810A2 (en) 2000-07-21 2002-01-31 Micro Managed Photons A/S Surface plasmon polariton band gap structures
DE10037715A1 (en) 2000-08-02 2002-02-14 Endress Hauser Gmbh Co Device for measuring the level of a product in a container
JP3501218B2 (en) * 2000-08-11 2004-03-02 日本電気株式会社 Flat panel display module and manufacturing method thereof
EP2360298A3 (en) 2000-08-22 2011-10-05 President and Fellows of Harvard College Method for depositing a semiconductor nanowire
US6780696B1 (en) 2000-09-12 2004-08-24 Alien Technology Corporation Method and apparatus for self-assembly of functional blocks on a substrate facilitated by electrode pairs
JP2002092984A (en) 2000-09-18 2002-03-29 Hitachi Maxell Ltd Stamper, producing method thereof and plastic substrate
US6980184B1 (en) 2000-09-27 2005-12-27 Alien Technology Corporation Display devices and integrated circuits
JP4491948B2 (en) 2000-10-06 2010-06-30 ソニー株式会社 Device mounting method and image display device manufacturing method
US6814898B1 (en) 2000-10-17 2004-11-09 Seagate Technology Llc Imprint lithography utilizing room temperature embossing
WO2002043032A2 (en) 2000-11-21 2002-05-30 Avery Dennison Corporation Display device and methods of manufacture and control
JP2004521485A (en) 2000-11-27 2004-07-15 コピン コーポレーション Bipolar transistor with lattice matched base layer
US6743982B2 (en) 2000-11-29 2004-06-01 Xerox Corporation Stretchable interconnects using stress gradient films
GB0029312D0 (en) 2000-12-01 2001-01-17 Philips Corp Intellectual Pty Flexible electronic device
US6608360B2 (en) 2000-12-15 2003-08-19 University Of Houston One-chip micro-integrated optoelectronic sensor
US20070031607A1 (en) 2000-12-19 2007-02-08 Alexander Dubson Method and apparatus for coating medical implants
US6277711B1 (en) 2001-01-08 2001-08-21 Jiahn-Chang Wu Semiconductor matrix formation
US6666821B2 (en) 2001-01-08 2003-12-23 Medtronic, Inc. Sensor system
JP4657577B2 (en) 2001-01-09 2011-03-23 マイクロチップス・インコーポレーテッド Flexible microchip device for ocular and other applications
US6655286B2 (en) * 2001-01-19 2003-12-02 Lucent Technologies Inc. Method for preventing distortions in a flexibly transferred feature pattern
JP2002217391A (en) * 2001-01-23 2002-08-02 Seiko Epson Corp Method for manufacturing laminate and semiconductor device
US20020110766A1 (en) 2001-02-09 2002-08-15 Industrial Technology Research Institute Process method of using excimer laser for forming micro spherical and non-spherical polymeric structure array
JP3665579B2 (en) * 2001-02-26 2005-06-29 ソニーケミカル株式会社 Electrical device manufacturing method
KR20020093113A (en) 2001-03-06 2002-12-12 코닌클리케 필립스 일렉트로닉스 엔.브이. Display device
JP2002268585A (en) 2001-03-08 2002-09-20 Matsushita Electric Ind Co Ltd Active matrix substrate and method for manufacturing the same
JP2004527905A (en) 2001-03-14 2004-09-09 ユニバーシティー オブ マサチューセッツ Nano manufacturing
US6417025B1 (en) * 2001-04-02 2002-07-09 Alien Technology Corporation Integrated circuit packages assembled utilizing fluidic self-assembly
US6667548B2 (en) 2001-04-06 2003-12-23 Intel Corporation Diamond heat spreading and cooling technique for integrated circuits
US7232460B2 (en) 2001-04-25 2007-06-19 Xillus, Inc. Nanodevices, microdevices and sensors on in-vivo structures and method for the same
US6864435B2 (en) 2001-04-25 2005-03-08 Alien Technology Corporation Electrical contacts for flexible displays
JP2004531859A (en) * 2001-04-26 2004-10-14 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Organic electroluminescent device and manufacturing method thereof
WO2002092778A2 (en) 2001-05-17 2002-11-21 The Board Of Trustees Of The Leland Stanford Junior University Device and method for three-dimensional spatial localization and functional interconnection of different types of cells
US6606247B2 (en) * 2001-05-31 2003-08-12 Alien Technology Corporation Multi-feature-size electronic structures
US6988667B2 (en) 2001-05-31 2006-01-24 Alien Technology Corporation Methods and apparatuses to identify devices
US6605545B2 (en) * 2001-06-01 2003-08-12 United Microelectronics Corp. Method for forming hybrid low-K film stack to avoid thermal stress effect
CA2448112A1 (en) 2001-06-05 2002-12-12 Exelixis Inc. Lces as modifiers of the p53 pathway and methods of use
WO2002103760A2 (en) 2001-06-14 2002-12-27 Amberware Systems Corporation Method of selective removal of sige alloys
US20030006527A1 (en) * 2001-06-22 2003-01-09 Rabolt John F. Method of fabricating micron-and submicron-scale elastomeric templates for surface patterning
US6984934B2 (en) 2001-07-10 2006-01-10 The Trustees Of Princeton University Micro-lens arrays for display intensity enhancement
US6657289B1 (en) 2001-07-13 2003-12-02 Alien Technology Corporation Apparatus relating to block configurations and fluidic self-assembly processes
US6590346B1 (en) 2001-07-16 2003-07-08 Alien Technology Corporation Double-metal background driven displays
US6856830B2 (en) 2001-07-19 2005-02-15 Bin He Method and apparatus of three dimension electrocardiographic imaging
AU2002322581A1 (en) 2001-07-20 2003-03-03 Microlink Devices, Inc. Graded base gaassb for high speed gaas hbt
WO2003009396A2 (en) 2001-07-20 2003-01-30 Microlink Devices, Inc. Algaas or ingap low turn-on voltage gaas-based heterojunction bipolar transistor
US6661037B2 (en) 2001-07-20 2003-12-09 Microlink Devices, Inc. Low emitter resistance contacts to GaAs high speed HBT
TW586231B (en) * 2001-07-24 2004-05-01 Seiko Epson Corp Transfer method, methods of manufacturing thin film devices and integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, manufacturing methods of IC card and electronic appliance
JP2003142666A (en) * 2001-07-24 2003-05-16 Seiko Epson Corp Transfer method for element, method for manufacturing element, integrated circuit, circuit board, electrooptic device, ic card and electronic apparatus
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
JP5057619B2 (en) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US6949199B1 (en) 2001-08-16 2005-09-27 Seagate Technology Llc Heat-transfer-stamp process for thermal imprint lithography
US6863219B1 (en) * 2001-08-17 2005-03-08 Alien Technology Corporation Apparatuses and methods for forming electronic assemblies
US6731353B1 (en) 2001-08-17 2004-05-04 Alien Technology Corporation Method and apparatus for transferring blocks
JP2003077940A (en) 2001-09-06 2003-03-14 Sony Corp Method of transferring device, method of arranging device using same, and method of manufacturing image display device unit
AUPR795401A0 (en) 2001-09-28 2001-10-18 University Of Queensland, The Components based on melanin and melanin-like bio-molecules and processes for their production
US7193504B2 (en) 2001-10-09 2007-03-20 Alien Technology Corporation Methods and apparatuses for identification
US6936181B2 (en) 2001-10-11 2005-08-30 Kovio, Inc. Methods for patterning using liquid embossing
US6724914B2 (en) * 2001-10-16 2004-04-20 Digimarc Corporation Progressive watermark decoding on a distributed computing platform
JP3907439B2 (en) * 2001-10-26 2007-04-18 キヤノン株式会社 Portable terminal system, portable terminal, image processing apparatus, and operation method thereof
KR100944886B1 (en) 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method of manufacturing a semiconductor device
JP2003229548A (en) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd Vehicle, display device and method for manufacturing semiconductor device
US7169669B2 (en) * 2001-12-04 2007-01-30 Origin Energy Solar Pty. Ltd. Method of making thin silicon sheets for solar cells
US6844673B1 (en) 2001-12-06 2005-01-18 Alien Technology Corporation Split-fabrication for light emitting display structures
JP2003197881A (en) * 2001-12-27 2003-07-11 Seiko Epson Corp Semiconductor integrated circuit, manufacturing method for the semiconductor integrated circuit, semiconductor element member, electrooptic device, and electronic equipment
JP4567941B2 (en) * 2001-12-28 2010-10-27 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device and method for manufacturing display device
JP3956697B2 (en) * 2001-12-28 2007-08-08 セイコーエプソン株式会社 Manufacturing method of semiconductor integrated circuit
US6887450B2 (en) 2002-01-02 2005-05-03 Zyvex Corporation Directional assembly of carbon nanotube strings
CN1606796A (en) 2002-01-23 2005-04-13 艾伦技术公司 Apparatus incorporating small-feature-size and large-feature-size components and method for making same
US6653030B2 (en) 2002-01-23 2003-11-25 Hewlett-Packard Development Company, L.P. Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
US20030149456A1 (en) 2002-02-01 2003-08-07 Rottenberg William B. Multi-electrode cardiac lead adapter with multiplexer
US6693384B1 (en) 2002-02-01 2004-02-17 Alien Technology Corporation Interconnect structure for electronic devices
US20030151118A1 (en) * 2002-02-14 2003-08-14 3M Innovative Properties Company Aperture masks for circuit fabrication
US20030157795A1 (en) * 2002-02-19 2003-08-21 Macronix International Co. Ltd. Self-aligned patterning in dual damascene process
JP3975272B2 (en) 2002-02-21 2007-09-12 独立行政法人産業技術総合研究所 Ultrafine fluid jet device
DE60310282T2 (en) 2002-03-01 2007-05-10 Dai Nippon Printing Co., Ltd. Thermally transferable image protection sheet, process for protective layer formation and recording produced by the process
AU2003212753A1 (en) 2002-03-07 2003-09-16 Acreo Ab Electrochemical device
US6716754B2 (en) * 2002-03-12 2004-04-06 Micron Technology, Inc. Methods of forming patterns and molds for semiconductor constructions
JP3889700B2 (en) * 2002-03-13 2007-03-07 三井金属鉱業株式会社 COF film carrier tape manufacturing method
US6950220B2 (en) 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
US7101729B2 (en) * 2002-03-28 2006-09-05 Seiko Epson Corporation Method of manufacturing a semiconductor device having adjoining substrates
JP3980918B2 (en) * 2002-03-28 2007-09-26 株式会社東芝 Active matrix substrate, method for manufacturing the same, and display device
JP2003298029A (en) * 2002-03-28 2003-10-17 Seiko Epson Corp Apparatus and method for exfoliation transfer, semiconductor device and ic card
JP2003297974A (en) * 2002-03-29 2003-10-17 Seiko Epson Corp Semiconductor device, electrooptical device, and method for fabricating semiconductor device
JP2003298006A (en) * 2002-03-29 2003-10-17 Seiko Epson Corp Semiconductor device and electro-optic device
US20040026684A1 (en) * 2002-04-02 2004-02-12 Nanosys, Inc. Nanowire heterostructures for encoding information
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US7081210B2 (en) 2002-04-22 2006-07-25 Konica Minolta Holdings, Inc. Organic semiconductor composition
EP1497867A2 (en) 2002-04-24 2005-01-19 E Ink Corporation Electronic displays
US6946205B2 (en) 2002-04-25 2005-09-20 Matsushita Electric Industrial Co., Ltd. Wiring transfer sheet and method for producing the same, and wiring board and method for producing the same
CN1659810B (en) 2002-04-29 2012-04-25 三星电子株式会社 Direct-connect signaling system
JP2003323132A (en) 2002-04-30 2003-11-14 Sony Corp Method for manufacturing thin film device and semiconductor device
JP4180833B2 (en) * 2002-04-30 2008-11-12 株式会社リコー Inverter
JP4052631B2 (en) 2002-05-17 2008-02-27 株式会社東芝 Active matrix display device
AU2003253690A1 (en) 2002-06-24 2004-01-06 Massachusetts Institute Of Technology Silk biomaterials and methods of use thereof
WO2004000915A2 (en) 2002-06-24 2003-12-31 Tufts University Silk biomaterials and methods of use thereof
US20040136866A1 (en) 2002-06-27 2004-07-15 Nanosys, Inc. Planar nanowire based sensor elements, devices, systems and methods for using and making same
US7371963B2 (en) 2002-07-31 2008-05-13 Kyocera Corporation Photovoltaic power generation system
US6915551B2 (en) * 2002-08-02 2005-07-12 Matrics, Inc. Multi-barrel die transfer apparatus and method for transferring dies therewith
JP2004071874A (en) 2002-08-07 2004-03-04 Sharp Corp Semiconductor device manufacturing method and semiconductor device
AU2003253192A1 (en) 2002-08-27 2004-04-30 Nanosys Gmbh Method for applying a hydrophobic coating to the surface of a porous substrate, maintaining its porosity
AU2003298998A1 (en) 2002-09-05 2004-04-08 Nanosys, Inc. Oriented nanostructures and methods of preparing
EP2399970A3 (en) 2002-09-05 2012-04-18 Nanosys, Inc. Nanocomposites
AU2003279708A1 (en) * 2002-09-05 2004-03-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US6949206B2 (en) 2002-09-05 2005-09-27 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
US6887792B2 (en) 2002-09-17 2005-05-03 Hewlett-Packard Development Company, L.P. Embossed mask lithography
EP1563555A4 (en) * 2002-09-30 2009-08-26 Nanosys Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7051945B2 (en) 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
JP4669784B2 (en) 2002-09-30 2011-04-13 ナノシス・インコーポレイテッド Integrated display using nanowire transistors
EP2194026A1 (en) * 2002-09-30 2010-06-09 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
WO2004034025A2 (en) 2002-10-10 2004-04-22 Nanosys, Inc. Nano-chem-fet based biosensors
US20040081384A1 (en) 2002-10-25 2004-04-29 Datesman Aaron M. Multiple-mode planar-waveguide sensor, fabrication materials and techniques
GB0224871D0 (en) * 2002-10-25 2002-12-04 Plastic Logic Ltd Self-aligned doping of source-drain contacts
US7067903B2 (en) 2002-11-07 2006-06-27 Kabushiki Kaisha Kobe Seiko Sho Heat spreader and semiconductor device and package using the same
FR2846906B1 (en) 2002-11-08 2005-08-05 Commissariat Energie Atomique METHOD FOR PRODUCING A COMPONENT COMPRISING A MICRO-SEAL AND COMPONENT PRODUCED THEREBY
US20040200734A1 (en) 2002-12-19 2004-10-14 Co Man Sung Nanotube-based sensors for biomolecules
US7842780B2 (en) 2003-01-07 2010-11-30 Trustees Of Tufts College Silk fibroin materials and use thereof
AU2003900180A0 (en) * 2003-01-16 2003-01-30 Silverbrook Research Pty Ltd Method and apparatus (dam001)
US7190051B2 (en) 2003-01-17 2007-03-13 Second Sight Medical Products, Inc. Chip level hermetic and biocompatible electronics package using SOI wafers
KR101029162B1 (en) 2003-02-03 2011-04-12 호야 가부시키가이샤 Photomask blank, photomask, and pattern transfer method using photomask
JP4082242B2 (en) * 2003-03-06 2008-04-30 ソニー株式会社 Element transfer method
WO2005022120A2 (en) 2003-03-11 2005-03-10 Nanosys, Inc. Process for producing nanocrystals and nanocrystals produced thereby
US6855638B2 (en) * 2003-03-24 2005-02-15 Union Semiconductor Technology Corporation Process to pattern thick TiW metal layers using uniform and selective etching
US7253735B2 (en) 2003-03-24 2007-08-07 Alien Technology Corporation RFID tags and processes for producing RFID tags
US20040189638A1 (en) 2003-03-25 2004-09-30 Frisken Sarah F. Method for converting a two-dimensional distance field to a set of boundary descriptors
US7465678B2 (en) 2003-03-28 2008-12-16 The Trustees Of Princeton University Deformable organic devices
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
US20050227389A1 (en) 2004-04-13 2005-10-13 Rabin Bhattacharya Deformable organic devices
JP4269748B2 (en) 2003-04-01 2009-05-27 セイコーエプソン株式会社 Manufacturing method of display device
EP1467224A1 (en) 2003-04-07 2004-10-13 CSEM Centre Suisse d'Electronique et de Microtechnique SA Optical proximity detector
EP3231846A1 (en) 2003-04-10 2017-10-18 Tufts University Concentrated aqueous silk fibroin solution and use thereof
US7056409B2 (en) 2003-04-17 2006-06-06 Nanosys, Inc. Structures, systems and methods for joining articles and materials and uses therefor
US20050038498A1 (en) * 2003-04-17 2005-02-17 Nanosys, Inc. Medical device applications of nanostructured surfaces
US7074294B2 (en) 2003-04-17 2006-07-11 Nanosys, Inc. Structures, systems and methods for joining articles and materials and uses therefor
JP2004327836A (en) * 2003-04-25 2004-11-18 Seiko Epson Corp Method for printing body to be printed, process for producing body to be printed, process for producing circuit substrate, electro-optical device, and electronic equipment
JP4871726B2 (en) 2003-04-28 2012-02-08 ナノシス・インク． Super lyophobic surface, its preparation and use
US20040211458A1 (en) 2003-04-28 2004-10-28 General Electric Company Tandem photovoltaic cell stacks
TWI427709B (en) 2003-05-05 2014-02-21 Nanosys Inc Nanofiber surfaces for use in enhanced surface area applications
US7803574B2 (en) 2003-05-05 2010-09-28 Nanosys, Inc. Medical device applications of nanostructured surfaces
AU2003902270A0 (en) 2003-05-09 2003-05-29 Origin Energy Solar Pty Ltd Separating and assembling semiconductor strips
US6951173B1 (en) * 2003-05-14 2005-10-04 Molecular Imprints, Inc. Assembly and method for transferring imprint lithography templates
US7244326B2 (en) 2003-05-16 2007-07-17 Alien Technology Corporation Transfer assembly for manufacturing electronic devices
US7265298B2 (en) 2003-05-30 2007-09-04 The Regents Of The University Of California Serpentine and corduroy circuits to enhance the stretchability of a stretchable electronic device
WO2005000483A1 (en) 2003-06-06 2005-01-06 Tufts University Method for forming inorganic coatings
US7494896B2 (en) 2003-06-12 2009-02-24 International Business Machines Corporation Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer
US7033961B1 (en) 2003-07-15 2006-04-25 Rf Micro Devices, Inc. Epitaxy/substrate release layer
US7439158B2 (en) * 2003-07-21 2008-10-21 Micron Technology, Inc. Strained semiconductor by full wafer bonding
TWI273019B (en) 2003-07-25 2007-02-11 Hon Hai Prec Ind Co Ltd A method of transfer pattern
CA2532991A1 (en) 2003-08-04 2005-02-24 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
EP1665120B1 (en) 2003-08-09 2013-04-17 Alien Technology Corporation Methods and apparatuses to identify devices
US7223609B2 (en) 2003-08-14 2007-05-29 Agilent Technologies, Inc. Arrays for multiplexed surface plasmon resonance detection of biological molecules
JP2005072528A (en) 2003-08-28 2005-03-17 Shin Etsu Chem Co Ltd Thin film field effect transistor and its manufacturing method
KR100541395B1 (en) * 2003-09-09 2006-01-11 삼성전자주식회사 Apparatus for stacking semiconductor chips on wafer, method using the apparatus, and semiconductor package manufactured thereby
US7029951B2 (en) 2003-09-12 2006-04-18 International Business Machines Corporation Cooling system for a semiconductor device and method of fabricating same
WO2005029578A1 (en) 2003-09-24 2005-03-31 Koninklijke Philips Electronics N.V. Semiconductor device, method of manufacturing same, identification label and information carrier
GB0323285D0 (en) 2003-10-04 2003-11-05 Koninkl Philips Electronics Nv Device and method of making a device having a patterned layer on a flexible substrate
GB0323286D0 (en) 2003-10-04 2003-11-05 Koninkl Philips Electronics Nv Device and method of making a device having a flexible layer structure
US20050082526A1 (en) 2003-10-15 2005-04-21 International Business Machines Corporation Techniques for layer transfer processing
DE10349963A1 (en) 2003-10-24 2005-06-02 Leonhard Kurz Gmbh & Co. Kg Process for producing a film
WO2005046470A1 (en) 2003-11-06 2005-05-26 The Regents Of The University Of Colorado, A Body Corporate Shape-memory polymer coated electrodes
DE112004001974T5 (en) 2003-11-11 2006-08-24 Tae Ii Kim Advertising film with retroreflective microprism film and method of making the same
EP1700161B1 (en) 2003-12-01 2018-01-24 The Board of Trustees of the University of Illinois Methods and devices for fabricating three-dimensional nanoscale structures
US20050124712A1 (en) 2003-12-05 2005-06-09 3M Innovative Properties Company Process for producing photonic crystals
JP5110766B2 (en) 2003-12-15 2012-12-26 株式会社半導体エネルギー研究所 Method for manufacturing thin film integrated circuit device and method for manufacturing non-contact type thin film integrated circuit device
KR101137797B1 (en) 2003-12-15 2012-04-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US20090198293A1 (en) 2003-12-19 2009-08-06 Lawrence Cauller Microtransponder Array for Implant
KR101376715B1 (en) 2003-12-19 2014-03-27 더 유니버시티 오브 노쓰 캐롤라이나 엣 채플 힐 Methods for fabricating isolated micro- and nano- structures using soft or imprint lithography
US7632087B2 (en) 2003-12-19 2009-12-15 Wd Media, Inc. Composite stamper for imprint lithography
DE10361940A1 (en) 2003-12-24 2005-07-28 Restate Patent Ag Degradation control of biodegradable implants by coating
US7132796B2 (en) * 2003-12-30 2006-11-07 Lg.Philips Lcd Co., Ltd Organic electroluminescent device and method of fabricating the same
JP4877870B2 (en) 2004-01-30 2012-02-15 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP4841807B2 (en) 2004-02-27 2011-12-21 株式会社半導体エネルギー研究所 Thin film integrated circuit and thin semiconductor device
TWI299358B (en) 2004-03-12 2008-08-01 Hon Hai Prec Ind Co Ltd Thermal interface material and method for making same
US7304393B1 (en) * 2004-03-24 2007-12-04 Microtune (Texas), L.P. System and method for coupling internal circuitry of an integrated circuit to the integrated circuit's package pins
US7052924B2 (en) 2004-03-29 2006-05-30 Articulated Technologies, Llc Light active sheet and methods for making the same
KR100880812B1 (en) 2004-03-29 2009-01-30 아티큘레이티드 테크놀러지스 엘엘씨 Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
CN100383213C (en) 2004-04-02 2008-04-23 清华大学 Thermal interface material and its manufacturing method
US20080055581A1 (en) 2004-04-27 2008-03-06 Rogers John A Devices and methods for pattern generation by ink lithography
JP2008507114A (en) 2004-04-27 2008-03-06 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Composite patterning device for soft lithography
CN100481327C (en) 2004-04-28 2009-04-22 汉阳大学校产学协力团 Flexible electro-optical apparatus and method for manufacturing the same
JP2005322858A (en) 2004-05-11 2005-11-17 Shinko Electric Ind Co Ltd Method for manufacturing semiconductor device
US20050261561A1 (en) 2004-05-24 2005-11-24 Christopher W. Jones Blood testing and therapeutic compound delivery system
US7622367B1 (en) 2004-06-04 2009-11-24 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US7943491B2 (en) 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
WO2005123114A2 (en) 2004-06-11 2005-12-29 Trustees Of Tufts College Silk-based drug delivery system
US7629691B2 (en) 2004-06-16 2009-12-08 Honeywell International Inc. Conductor geometry for electronic circuits fabricated on flexible substrates
US7425523B2 (en) 2004-07-05 2008-09-16 Dai Nippon Printing Co., Ltd. Thermal transfer recording material and thermal transfer recording method
US7320584B1 (en) * 2004-07-07 2008-01-22 Komag, Inc. Die set having sealed compliant member
US7687886B2 (en) 2004-08-19 2010-03-30 Microlink Devices, Inc. High on-state breakdown heterojunction bipolar transistor
WO2006028996A2 (en) 2004-09-03 2006-03-16 Trustees Of Tufts College Emulsan-alginate microspheres and methods of use thereof
US20060057763A1 (en) * 2004-09-14 2006-03-16 Agency For Science, Technology And Research Method of forming a surface mountable IC and its assembly
US20080280360A1 (en) 2004-10-12 2008-11-13 Trustees Of Tufts College Method for Producing Biomaterial Scaffolds
US7662545B2 (en) 2004-10-14 2010-02-16 The Board Of Trustees Of The University Of Illinois Decal transfer lithography
US7621044B2 (en) 2004-10-22 2009-11-24 Formfactor, Inc. Method of manufacturing a resilient contact
WO2006050325A2 (en) 2004-10-29 2006-05-11 Worcester Polytechnic Institute System and method for multi-channel electrophysiologic signal data acquisition
CA2586197C (en) 2004-11-04 2012-08-14 Mesophotonics Limited Metal nano-void photonic crystal for enhanced raman spectroscopy
US7695602B2 (en) 2004-11-12 2010-04-13 Xerox Corporation Systems and methods for transporting particles
JP2006186294A (en) 2004-12-03 2006-07-13 Toppan Printing Co Ltd Thin film transistor and its manufacturing method
US20060129056A1 (en) 2004-12-10 2006-06-15 Washington University Electrocorticography telemitter
US20060127817A1 (en) * 2004-12-10 2006-06-15 Eastman Kodak Company In-line fabrication of curved surface transistors
US7229901B2 (en) 2004-12-16 2007-06-12 Wisconsin Alumni Research Foundation Fabrication of strained heterojunction structures
US20060132025A1 (en) 2004-12-22 2006-06-22 Eastman Kodak Company Flexible display designed for minimal mechanical strain
US7960509B2 (en) 2005-01-14 2011-06-14 Trustees Of Tufts College Fibrous protein fusions and use thereof in the formation of advanced organic/inorganic composite materials
US7374968B2 (en) * 2005-01-28 2008-05-20 Hewlett-Packard Development Company, L.P. Method of utilizing a contact printing stamp
US7794742B2 (en) 2005-02-08 2010-09-14 University Of Washington Devices for promoting epithelial cell differentiation and keratinization
WO2006104069A1 (en) 2005-03-28 2006-10-05 Pioneer Corporation Gate insulating film, organic transistor, method for manufacturing organic el display, and display
US9290579B2 (en) 2005-04-20 2016-03-22 Trustees Of Tufts College Covalently immobilized protein gradients in three-dimensional porous scaffolds
US8101498B2 (en) 2005-04-21 2012-01-24 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
WO2008103195A2 (en) 2005-04-28 2008-08-28 Second Sight Medical Products, Inc. Flexible circuit electrode array
US8024022B2 (en) 2005-05-25 2011-09-20 Alfred E. Mann Foundation For Scientific Research Hermetically sealed three-dimensional electrode array
US7501069B2 (en) 2005-06-01 2009-03-10 The Board Of Trustees Of The University Of Illinois Flexible structures for sensors and electronics
MY152238A (en) 2005-06-02 2014-09-15 Univ Illinois Printable semiconductor structures and related methods of making and assembling
EP1915774B1 (en) 2005-06-02 2015-05-20 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US7763353B2 (en) 2005-06-10 2010-07-27 Ut-Battelle, Llc Fabrication of high thermal conductivity arrays of carbon nanotubes and their composites
WO2007000037A1 (en) 2005-06-29 2007-01-04 Mitchell, Richard, J. Bendable high flux led array
US7479404B2 (en) 2005-07-08 2009-01-20 The Board Of Trustees Of The University Of Illinois Photonic crystal biosensor structure and fabrication method
ES2374428T3 (en) 2005-08-02 2012-02-16 Trustees Of Tufts College METHODS FOR THE PROGRESSIVE DEPOSITION OF SILK FIBROIN COATINGS.
US20070043416A1 (en) 2005-08-19 2007-02-22 Cardiac Pacemakers, Inc. Implantable electrode array
KR100758699B1 (en) 2005-08-29 2007-09-14 재단법인서울대학교산학협력재단 Method for forming high aspect ratio nanostructure and method for forming nano pattern using the same
US8005526B2 (en) 2005-08-31 2011-08-23 The Regents Of The University Of Michigan Biologically integrated electrode devices
AU2006311850B2 (en) 2005-11-02 2011-06-16 Second Sight Medical Products, Inc. Implantable microelectronic device and method of manufacture
DE102006008501B3 (en) 2006-02-23 2007-10-25 Albert-Ludwigs-Universität Freiburg Probe and method for data transfer between a brain and a data processing device
US7649098B2 (en) 2006-02-24 2010-01-19 Lexicon Pharmaceuticals, Inc. Imidazole-based compounds, compositions comprising them and methods of their use
JP2009528254A (en) 2006-03-03 2009-08-06 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Spatally arranged nanotubes and method of making nanotube arrays
US20080038236A1 (en) 2006-03-06 2008-02-14 Artecel Sciences, Inc. Biocompatible scaffolds and adipose-derived stem cells
US20070233208A1 (en) 2006-03-28 2007-10-04 Eastman Kodak Company Light therapy bandage with imbedded emitters
US20070227586A1 (en) 2006-03-31 2007-10-04 Kla-Tencor Technologies Corporation Detection and ablation of localized shunting defects in photovoltaics
US7705280B2 (en) 2006-07-25 2010-04-27 The Board Of Trustees Of The University Of Illinois Multispectral plasmonic crystal sensors
DE102006037433B4 (en) 2006-08-09 2010-08-19 Ovd Kinegram Ag Method for producing a multilayer body and multilayer body
TWI378747B (en) 2006-08-18 2012-12-01 Ind Tech Res Inst Flexible electronic assembly
AU2007289057C1 (en) 2006-09-01 2014-01-16 Pacific Biosciences Of California, Inc. Substrates, systems and methods for analyzing materials
KR101453419B1 (en) 2006-09-06 2014-10-23 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 A two-dimensional stretchable and bendable device
US7932123B2 (en) 2006-09-20 2011-04-26 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
EP1903000B1 (en) 2006-09-25 2019-09-18 Sorin CRM SAS Implantable biocompatible component including an integrated active element such as a sensor for measuring a physiological parameter, electromechanical microsystem or electronic circuit
US20100028451A1 (en) 2006-09-26 2010-02-04 Trustees Of Tufts College Silk microspheres for encapsulation and controlled release
US20100046902A1 (en) 2006-11-03 2010-02-25 Trustees Of Tufts College Biopolymer photonic crystals and method of manufacturing the same
CA2704309C (en) 2006-11-03 2017-02-28 Trustees Of Tufts College Electroactive biopolymer optical and electro-optical devices and method of manufacturing the same
US20100068740A1 (en) 2006-11-03 2010-03-18 Trustees Of Tufts College Microfluidic device with a cylindrical microchannel and a method for fabricating same
US8529835B2 (en) 2006-11-03 2013-09-10 Tufts University Biopolymer sensor and method of manufacturing the same
EP2086749B1 (en) 2006-11-03 2013-05-08 Trustees Of Tufts College Nanopatterned biopolymer optical device and method of manufacturing the same
US7868354B2 (en) 2006-11-08 2011-01-11 Duke University GaN-based nitric oxide sensors and methods of making and using the same
US8975073B2 (en) 2006-11-21 2015-03-10 The Charles Stark Draper Laboratory, Inc. Microfluidic device comprising silk films coupled to form a microchannel
US20120223293A1 (en) 2007-01-05 2012-09-06 Borenstein Jeffrey T Biodegradable Electronic Devices
JP5700750B2 (en) 2007-01-17 2015-04-15 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Optical system manufactured by printing base assembly
JP2008202022A (en) 2007-01-23 2008-09-04 Fujifilm Corp Curable composition for optical nano imprint lithography, and pattern forming method using the same
US8057390B2 (en) 2007-01-26 2011-11-15 The Regents Of The University Of Michigan High-resolution mapping of bio-electric fields
JP2010522583A (en) 2007-02-27 2010-07-08 トラスティーズ オブ タフツ カレッジ Silk organs made by tissue engineering
WO2008136958A1 (en) 2007-04-30 2008-11-13 Opthera, Inc. Uva1-led phototherapy device and method
DK2211876T3 (en) 2007-05-29 2015-01-12 Tufts College PROCESS FOR silk fibroin-GELATION USING sonication
US9061494B2 (en) 2007-07-19 2015-06-23 The Board Of Trustees Of The University Of Illinois High resolution electrohydrodynamic jet printing for manufacturing systems
WO2009023615A1 (en) 2007-08-10 2009-02-19 Trustees Of Tufts College Tubular silk compositions and methods of use thereof
WO2009061823A1 (en) 2007-11-05 2009-05-14 Trustees Of Tufts College Fabrication of silk fibroin photonic structures by nanocontact imprinting
US20090149930A1 (en) 2007-12-07 2009-06-11 Thermage, Inc. Apparatus and methods for cooling a treatment apparatus configured to non-invasively deliver electromagnetic energy to a patient's tissue
PL2219726T3 (en) 2007-12-10 2013-07-31 Neuronano Ab Medical electrode, electrode bundle and electrode bundle array
US8290557B2 (en) 2007-12-12 2012-10-16 Medtronic, Inc. Implantable optical sensor and method for use
GB0800797D0 (en) 2008-01-16 2008-02-27 Cambridge Entpr Ltd Neural interface
CA2713251A1 (en) 2008-02-07 2009-08-13 Trustees Of Tufts College 3-dimensional silk hydroxyapatite compositions
US8552299B2 (en) 2008-03-05 2013-10-08 The Board Of Trustees Of The University Of Illinois Stretchable and foldable electronic devices
WO2009114115A1 (en) 2008-03-10 2009-09-17 S.E.A. Medical Systems, Inc. Intravenous fluid monitoring
US9107592B2 (en) 2008-03-12 2015-08-18 The Trustees Of The University Of Pennsylvania Flexible and scalable sensor arrays for recording and modulating physiologic activity
US8206774B2 (en) 2008-03-13 2012-06-26 Trustees Of Tufts College Diazonium salt modification of silk polymer
JP2011515815A (en) 2008-03-26 2011-05-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Light emitting diode device
US8470701B2 (en) 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
US9068282B2 (en) 2008-04-08 2015-06-30 Trustees Of Tufts College System and method for making biomaterial structures
WO2009140588A1 (en) 2008-05-15 2009-11-19 Trustees Of Tufts College Silk polymer-based adenosine release: therapeutic potential for epilepsy
WO2010005707A1 (en) 2008-06-16 2010-01-14 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
US20110135697A1 (en) 2008-06-18 2011-06-09 Trustees Of Tufts College Edible holographic silk products
US8679888B2 (en) 2008-09-24 2014-03-25 The Board Of Trustees Of The University Of Illinois Arrays of ultrathin silicon solar microcells
EP2349366B1 (en) 2008-09-26 2013-08-28 Trustees Of Tufts College Active silk muco-adhesives, silk electrogelation process, and devices
KR20110094277A (en) 2008-10-09 2011-08-23 트러스티즈 오브 터프츠 칼리지 Modified silk films containing glycerol
JP2012504985A (en) 2008-10-10 2012-03-01 グット，カルステン，ニルス Embedding apparatus and embedding method
EP2345069B1 (en) 2008-10-27 2016-02-17 Nxp B.V. Method of manufacturing a biocompatible electrode
US9427499B2 (en) 2008-11-17 2016-08-30 Trustees Of Tufts College Surface modification of silk fibroin matrices with poly(ethylene glycol) useful as anti-adhesion barriers and anti-thrombotic materials
WO2010065957A2 (en) 2008-12-05 2010-06-10 Trustees Of Tufts College Vascularized living skin constructs and methods of use thereof
KR100992411B1 (en) 2009-02-06 2010-11-05 (주)실리콘화일 Image sensor capable of judging proximity of a subject
WO2010126640A2 (en) 2009-02-12 2010-11-04 Trustees Of Tufts College Nanoimprinting of silk fibroin structures for biomedical and biophotonic applications
US20120052124A1 (en) 2009-03-04 2012-03-01 Trustees Of Tufts College Silk fibroin systems for antibiotic delivery
KR101706915B1 (en) 2009-05-12 2017-02-15 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
US20120070427A1 (en) 2009-06-01 2012-03-22 Trustees Of Tufts College Vortex-induced silk fibroin gelation for encapsulation and delivery
EP2451953A4 (en) 2009-07-10 2013-07-03 Tufts College Bioengineered silk protein-based nucleic acid delivery systems
EP2453931A4 (en) 2009-07-14 2014-04-30 Tufts College Electrospun silk material systems for wound healing
JP2012533780A (en) 2009-07-20 2012-12-27 タフツ ユニバーシティー／トラスティーズ オブ タフツ カレッジ Implantable absorptive reflector made of protein only
US8293486B2 (en) 2009-07-21 2012-10-23 Trustees Of Tufts College Functionalization of silk material by avidin-biotin interaction
EP2474054A4 (en) 2009-08-31 2013-03-13 Tufts University Trustees Of Tufts College Silk transistor devices
WO2011038401A2 (en) 2009-09-28 2011-03-31 Trustees Of Tufts College Drawn silk egel fibers and methods of making same
IN2012DN02358A (en) 2009-09-29 2015-08-21 Tufts College
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
EP2513953B1 (en) 2009-12-16 2017-10-18 The Board of Trustees of the University of Illionis Electrophysiology using conformal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US9057994B2 (en) 2010-01-08 2015-06-16 The Board Of Trustees Of The University Of Illinois High resolution printing of charge
TWI556802B (en) 2010-03-12 2016-11-11 美國伊利諾大學理事會 Implantable biomedical devices on bioresorbable substrates
KR101837481B1 (en) 2010-03-17 2018-03-13 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 implantable biomedical devices on bioresorbable substrates
US8562095B2 (en) 2010-11-01 2013-10-22 The Board Of Trustees Of The University Of Illinois High resolution sensing and control of electrohydrodynamic jet printing
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
EP2713863B1 (en) 2011-06-03 2020-01-15 The Board of Trustees of the University of Illionis Conformable actively multiplexed high-density surface electrode array for brain interfacing
WO2013010113A1 (en) 2011-07-14 2013-01-17 The Board Of Trustees Of The University Of Illinois Non-contact transfer printing
CN104472023B (en) 2011-12-01 2018-03-27 伊利诺伊大学评议会 It is designed to undergo the transient state device of programmable transformation
KR20150004819A (en) 2012-03-30 2015-01-13 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 Appendage mountable electronic devices conformable to surfaces
US10840536B2 (en) 2013-02-06 2020-11-17 The Board Of Trustees Of The University Of Illinois Stretchable electronic systems with containment chambers
US10497633B2 (en) 2013-02-06 2019-12-03 The Board Of Trustees Of The University Of Illinois Stretchable electronic systems with fluid containment
US9613911B2 (en) 2013-02-06 2017-04-04 The Board Of Trustees Of The University Of Illinois Self-similar and fractal design for stretchable electronics
US10617300B2 (en) 2013-02-13 2020-04-14 The Board Of Trustees Of The University Of Illinois Injectable and implantable cellular-scale electronic devices
US9875974B2 (en) 2013-03-08 2018-01-23 The Board Of Trustees Of The University Of Illinois Processing techniques for silicon-based transient devices
WO2014165686A2 (en) 2013-04-04 2014-10-09 The Board Of Trustees Of The University Of Illinois Purification of carbon nanotubes via selective heating
US10292263B2 (en) 2013-04-12 2019-05-14 The Board Of Trustees Of The University Of Illinois Biodegradable materials for multilayer transient printed circuit boards
JP6561368B2 (en) 2013-04-12 2019-08-21 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ Materials, electronic systems, and modes for active and passive transients
US9087764B2 (en) * 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
US10820862B2 (en) 2013-10-02 2020-11-03 The Board Of Trustees Of The University Of Illinois Organ mounted electronics
CN106463553A (en) 2014-01-16 2017-02-22 伊利诺斯州大学信托董事会 Printing-based multi-junction, multi-terminal photovoltaic devices
EP3179902B1 (en) 2014-08-11 2020-10-14 The Board of Trustees of the University of Illionis Epidermal device for analysis of temperature and thermal transport characteristics
WO2016025430A1 (en) 2014-08-11 2016-02-18 The Board Of Trustees Of The University Of Illinois Epidermal photonic systems and methods
WO2016025468A2 (en) 2014-08-11 2016-02-18 The Board Of Trustees Of The University Of Illinois Devices and related methods for epidermal characterization of biofluids
US20170347891A1 (en) 2014-10-01 2017-12-07 The Board Of Trustees Of The University Of Illinois Thermal Transport Characteristics of Human Skin Measured In Vivo Using Thermal Elements
US11894350B2 (en) * 2014-10-31 2024-02-06 e Lux, Inc. Fluidic assembly enabled mass transfer for microLED displays
US10538028B2 (en) 2014-11-17 2020-01-21 The Board Of Trustees Of The University Of Illinois Deterministic assembly of complex, three-dimensional architectures by compressive buckling
US20170020402A1 (en) 2015-05-04 2017-01-26 The Board Of Trustees Of The University Of Illinois Implantable and bioresorbable sensors
EP3304130B1 (en) 2015-06-01 2021-10-06 The Board of Trustees of the University of Illinois Alternative approach to uv sensing
US10677647B2 (en) 2015-06-01 2020-06-09 The Board Of Trustees Of The University Of Illinois Miniaturized electronic systems with wireless power and near-field communication capabilities
WO2017004576A1 (en) 2015-07-02 2017-01-05 The Board Of Trustees Of The University Of Illinois Wireless optofluidic systems for programmable in vivo pharmacology and optogenetics
US20180192952A1 (en) 2015-07-02 2018-07-12 The Board Of Trustees Of The University Of Illinois Fully implantable soft medical devices for interfacing with biological tissue
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
US11154201B2 (en) 2016-04-01 2021-10-26 The Board Of Trustees Of The University Of Illinois Implantable medical devices for optogenetics
US10653342B2 (en) 2016-06-17 2020-05-19 The Board Of Trustees Of The University Of Illinois Soft, wearable microfluidic systems capable of capture, storage, and sensing of biofluids
US11394720B2 (en) 2019-12-30 2022-07-19 Itron, Inc. Time synchronization using trust aggregation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766670A (en) * 1987-02-02 1988-08-30 International Business Machines Corporation Full panel electronic packaging structure and method of making same
US20030227116A1 (en) * 2002-04-29 2003-12-11 Marcus Halik Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DUAN ET AL.: "High Performance thin-film transistors using semiconductor nanowires and nanoribbons", NATURE, vol. 425, September 2003 (2003-09-01), pages 274 - 278, XP008050863 *
PAN ET AL.: "Nanobelts of Semiconducting Oxides", SCIENCE, vol. 291, March 2001 (2001-03-01), pages 1947 - 1949, XP002197819 *
ZAUMSEIL ET AL.: "Three-Dimensional and Multilayer Nanostructures Formed by Nanotransfer Printing", NANO LETTERS, vol. 3, no. 9, July 2003 (2003-07-01), pages 1223 - 1227, XP008115989 *

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105555B2 (en) 2004-06-04 2015-08-11 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US9515025B2 (en) 2004-06-04 2016-12-06 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US9450043B2 (en) 2004-06-04 2016-09-20 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US9324733B2 (en) 2004-06-04 2016-04-26 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US9349900B2 (en) 2006-09-20 2016-05-24 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
CN105826345B (en) * 2007-01-17 2018-07-31 伊利诺伊大学评议会 Pass through the optical system of the assembly based on printing
US9601671B2 (en) 2007-01-17 2017-03-21 The Board Of Trustees Of The University Of Illinois Optical systems fabricated by printing-based assembly
US8394483B2 (en) 2007-01-24 2013-03-12 Micron Technology, Inc. Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly
US8905772B2 (en) 2008-03-05 2014-12-09 The Board Of Trustees Of The University Of Illinois Stretchable and foldable electronic devices
US8633112B2 (en) 2008-03-21 2014-01-21 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US9289132B2 (en) 2008-10-07 2016-03-22 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US9012784B2 (en) 2008-10-07 2015-04-21 Mc10, Inc. Extremely stretchable electronics
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8865489B2 (en) 2009-05-12 2014-10-21 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
US9554484B2 (en) 2012-03-30 2017-01-24 The Board Of Trustees Of The University Of Illinois Appendage mountable electronic devices conformable to surfaces
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer

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