WO2005093780A3 - Rf plasma source with conductive top section - Google Patents

Rf plasma source with conductive top section Download PDF

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Publication number
WO2005093780A3
WO2005093780A3 PCT/US2005/008709 US2005008709W WO2005093780A3 WO 2005093780 A3 WO2005093780 A3 WO 2005093780A3 US 2005008709 W US2005008709 W US 2005008709W WO 2005093780 A3 WO2005093780 A3 WO 2005093780A3
Authority
WO
WIPO (PCT)
Prior art keywords
section
chamber
plasma source
extends
radio frequency
Prior art date
Application number
PCT/US2005/008709
Other languages
French (fr)
Other versions
WO2005093780A2 (en
Inventor
Vikram Singh
Harold Persing
Timothy Miller
Original Assignee
Varian Semiconductor Equipment
Vikram Singh
Harold Persing
Timothy Miller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment, Vikram Singh, Harold Persing, Timothy Miller filed Critical Varian Semiconductor Equipment
Publication of WO2005093780A2 publication Critical patent/WO2005093780A2/en
Publication of WO2005093780A3 publication Critical patent/WO2005093780A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation

Abstract

A plasma source includes a chamber that contains a process gas. The chamber has a chamber top comprising a first section formed of a dielectric material that extends in a horizontal direction. A second section of the chamber top is formed of a dielectric material that extends a height from the first section in a vertical direction. A top section of the chamber top is formed of a conductive material that extends a length across the second section in the horizontal direction. A radio frequency antenna is positioned proximate to at least one of the first section and the second section. The radio frequency antenna induces radio frequency currents into the chamber that excite and ionize the process gas so as to generate a plasma in the chamber.
PCT/US2005/008709 2004-03-22 2005-03-16 Rf plasma source with conductive top section WO2005093780A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/805,966 2004-03-22
US10/805,966 US20050205211A1 (en) 2004-03-22 2004-03-22 Plasma immersion ion implantion apparatus and method
US10/905,172 2004-12-20
US10/905,172 US20050205212A1 (en) 2004-03-22 2004-12-20 RF Plasma Source With Conductive Top Section

Publications (2)

Publication Number Publication Date
WO2005093780A2 WO2005093780A2 (en) 2005-10-06
WO2005093780A3 true WO2005093780A3 (en) 2006-06-08

Family

ID=34962830

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/008709 WO2005093780A2 (en) 2004-03-22 2005-03-16 Rf plasma source with conductive top section

Country Status (3)

Country Link
US (2) US20050205211A1 (en)
TW (1) TWI423735B (en)
WO (1) WO2005093780A2 (en)

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Also Published As

Publication number Publication date
US20050205211A1 (en) 2005-09-22
TW200534751A (en) 2005-10-16
WO2005093780A2 (en) 2005-10-06
TWI423735B (en) 2014-01-11
US20050205212A1 (en) 2005-09-22

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