WO2005079443A3 - Qwip with tunable spectral response - Google Patents

Qwip with tunable spectral response Download PDF

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Publication number
WO2005079443A3
WO2005079443A3 PCT/US2005/005005 US2005005005W WO2005079443A3 WO 2005079443 A3 WO2005079443 A3 WO 2005079443A3 US 2005005005 W US2005005005 W US 2005005005W WO 2005079443 A3 WO2005079443 A3 WO 2005079443A3
Authority
WO
WIPO (PCT)
Prior art keywords
mwir
channel
detector layer
qwip
tunability
Prior art date
Application number
PCT/US2005/005005
Other languages
French (fr)
Other versions
WO2005079443A2 (en
Inventor
Mani Sundaram
Axel R Reisinger
Original Assignee
Bae Systems Information
Mani Sundaram
Axel R Reisinger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/781,523 external-priority patent/US7238960B2/en
Application filed by Bae Systems Information, Mani Sundaram, Axel R Reisinger filed Critical Bae Systems Information
Priority to EP05723186A priority Critical patent/EP1723399A4/en
Publication of WO2005079443A2 publication Critical patent/WO2005079443A2/en
Publication of WO2005079443A3 publication Critical patent/WO2005079443A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Abstract

A tunable QWIP FPA device that is configured for spectral tunability for performing the likes of imaging and spectroscopy is disclosed. A selected bias voltage is applied across the contacts associated with a particular detector layer/channel of the device, where each applied bias corresponds to a particular target spectrum/color for detection. Each detector layer/channel can be coarse tuned for a bimodal or dual-band operation (e.g., MWIR/LWIR). Also, each detector layer/channel is configured for continuous or fine tuning within a particular mode (e.g., MWIR/MWIR). Thus, dynamic bias-controlled tuning is enabled. Asymmetric quantum well configurations enable this tunability.
PCT/US2005/005005 2004-02-18 2005-02-17 Qwip with tunable spectral response WO2005079443A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP05723186A EP1723399A4 (en) 2004-02-18 2005-02-17 Qwip with tunable spectral response

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/781,523 2004-02-18
US10/781,523 US7238960B2 (en) 1999-12-24 2004-02-18 QWIP with enhanced optical coupling
US10/829,574 2004-04-22
US10/829,574 US7291858B2 (en) 1999-12-24 2004-04-22 QWIP with tunable spectral response

Publications (2)

Publication Number Publication Date
WO2005079443A2 WO2005079443A2 (en) 2005-09-01
WO2005079443A3 true WO2005079443A3 (en) 2006-05-26

Family

ID=34890635

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/005005 WO2005079443A2 (en) 2004-02-18 2005-02-17 Qwip with tunable spectral response

Country Status (3)

Country Link
US (1) US7291858B2 (en)
EP (1) EP1723399A4 (en)
WO (1) WO2005079443A2 (en)

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WO2006044983A2 (en) * 2004-10-20 2006-04-27 Massachusetts Institute Of Technology Multi-spectral pixel and focal plane array
FR2910133B1 (en) * 2006-12-13 2009-02-13 Thales Sa IMAGING SYSTEM IR2-IR3 BI-FIELD COMPACT
DE102008006987A1 (en) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Radiation receiver and method for producing a radiation receiver
US20090201400A1 (en) * 2008-02-08 2009-08-13 Omnivision Technologies, Inc. Backside illuminated image sensor with global shutter and storage capacitor
US7926961B2 (en) * 2008-11-20 2011-04-19 Bae Systems Information And Electronic Systems Integration Inc. Low background flux telescope with integrated baffle
US8075144B2 (en) * 2008-11-20 2011-12-13 Bae Systems Information And Electronic Systems Integration Inc. Integrated telescope baffle and mirror support
US8399820B2 (en) 2009-06-23 2013-03-19 Sensors Unlimited, Inc. Multicolor detectors and applications thereof
US8669588B2 (en) * 2009-07-06 2014-03-11 Raytheon Company Epitaxially-grown position sensitive detector
CN102280458A (en) * 2010-06-11 2011-12-14 英属开曼群岛商恒景科技股份有限公司 Back irradiation sensor
JP5630213B2 (en) * 2010-10-28 2014-11-26 富士通株式会社 Photodetector
US8338200B2 (en) 2011-02-02 2012-12-25 L-3 Communications Cincinnati Electronics Corporation Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same
US8441087B2 (en) * 2011-07-22 2013-05-14 Raytheon Company Direct readout focal plane array
US10115764B2 (en) * 2011-08-15 2018-10-30 Raytheon Company Multi-band position sensitive imaging arrays
EP3385989A1 (en) 2011-09-13 2018-10-10 L3 Cincinnati Electronics Corporation Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same
FR2982706A1 (en) * 2011-11-15 2013-05-17 Soc Fr Detecteurs Infrarouges Sofradir DEVICE FOR DETECTION OF TWO DIFFERENT COLORS WITH IMPROVED OPERATING CONDITIONS
US11158754B1 (en) * 2013-08-09 2021-10-26 Hrl Laboratories, Llc Back-to-back dual band p-CB-n
US9621864B2 (en) * 2014-01-14 2017-04-11 Microsoft Technology Licensing, Llc Spectral imaging system
JP6880601B2 (en) * 2016-08-22 2021-06-02 富士通株式会社 Photodetector and imaging device

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Also Published As

Publication number Publication date
EP1723399A4 (en) 2010-11-17
US7291858B2 (en) 2007-11-06
WO2005079443A2 (en) 2005-09-01
EP1723399A2 (en) 2006-11-22
US20040195509A1 (en) 2004-10-07

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