WO2005060230A3 - Device and method for image sensing - Google Patents

Device and method for image sensing Download PDF

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Publication number
WO2005060230A3
WO2005060230A3 PCT/US2004/041294 US2004041294W WO2005060230A3 WO 2005060230 A3 WO2005060230 A3 WO 2005060230A3 US 2004041294 W US2004041294 W US 2004041294W WO 2005060230 A3 WO2005060230 A3 WO 2005060230A3
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
pixels
image sensing
source follower
sense node
Prior art date
Application number
PCT/US2004/041294
Other languages
French (fr)
Other versions
WO2005060230A2 (en
Inventor
Selim S Bencuya
Jiafu Luo
Richard A Mann
Original Assignee
Ess Technology Inc
Selim S Bencuya
Jiafu Luo
Richard A Mann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ess Technology Inc, Selim S Bencuya, Jiafu Luo, Richard A Mann filed Critical Ess Technology Inc
Publication of WO2005060230A2 publication Critical patent/WO2005060230A2/en
Publication of WO2005060230A3 publication Critical patent/WO2005060230A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The present invention relates to devices and methods for image sensing. In one aspect, the present invention relates to a device including a plurality of pixels (132, 134, 136, 138), wherein each pixel includes a charge transfer device (112, 114, 116, 118) and photodetector (122, 124, 126, 128), and each of the pixels has a itch of about 3 micron or less. This aspect further includes a select transistor (110), a reset transistor (106), a source follower transistor (108), and a sense node (120), wherein the select transistor (110), the reset transistor (106), the source follower transistor (108), and the sense node (120) are shared by the plurality of pixels (132, 134, 136, 138).
PCT/US2004/041294 2003-12-10 2004-12-10 Device and method for image sensing WO2005060230A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/732,583 US20050128327A1 (en) 2003-12-10 2003-12-10 Device and method for image sensing
US10/732,583 2003-12-10

Publications (2)

Publication Number Publication Date
WO2005060230A2 WO2005060230A2 (en) 2005-06-30
WO2005060230A3 true WO2005060230A3 (en) 2007-01-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/041294 WO2005060230A2 (en) 2003-12-10 2004-12-10 Device and method for image sensing

Country Status (3)

Country Link
US (1) US20050128327A1 (en)
TW (1) TW200526030A (en)
WO (1) WO2005060230A2 (en)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4074599B2 (en) * 2004-03-26 2008-04-09 シャープ株式会社 Amplification type solid-state imaging device
JP4455215B2 (en) * 2004-08-06 2010-04-21 キヤノン株式会社 Imaging device
US7911518B2 (en) * 2005-02-01 2011-03-22 Samsung Electronics Co., Ltd. Variable exposure for color image sensor
KR100660865B1 (en) * 2005-06-08 2006-12-26 삼성전자주식회사 Pixel circuit having shared interconnections/transistors in image sensor and driving method thereof
KR100787938B1 (en) * 2005-07-15 2007-12-24 삼성전자주식회사 Cmos image sensor of shared active pixel sensor structure and driving method
KR100772892B1 (en) * 2006-01-13 2007-11-05 삼성전자주식회사 shared type image sensor with controllable floating diffusion capacitance
JP4631723B2 (en) 2006-01-27 2011-02-16 ソニー株式会社 Solid-state imaging device
US7411169B2 (en) * 2006-05-12 2008-08-12 Ess Technology, Inc. Wide dynamic range image sensor and method of use
US7576798B2 (en) * 2006-06-09 2009-08-18 Sony Ericsson Mobile Communications Ab Mobile terminals including image sensor integrated flash sensing circuits and methods of operating the same
KR100890152B1 (en) * 2006-12-22 2009-03-20 매그나칩 반도체 유한회사 Small Size, High Gain, and Low Noise Pixel for CMOS Image Sensors
JP4957238B2 (en) * 2006-12-27 2012-06-20 ソニー株式会社 Solid-state imaging device
JP4054839B1 (en) * 2007-03-02 2008-03-05 キヤノン株式会社 Photoelectric conversion device and imaging system using the same
EP1971088A1 (en) * 2007-03-12 2008-09-17 Nokia Corporation Release of resources in a communication system
FR2914528B1 (en) * 2007-03-26 2009-07-24 Commissariat Energie Atomique IMAGE SENSOR FOR OPERATING IN SUB-RESOLUTION MODE.
WO2008124605A1 (en) * 2007-04-04 2008-10-16 Texas Instruments Incorporated Imaging device and imaging device drive method
JP2008258885A (en) * 2007-04-04 2008-10-23 Texas Instr Japan Ltd Imaging apparatus and driving method of imaging apparatus
KR100853195B1 (en) * 2007-04-10 2008-08-21 삼성전자주식회사 Image sensor
US20100110245A1 (en) * 2007-04-18 2010-05-06 Rosnes Corporation Solid-state imaging device
US20080296639A1 (en) * 2007-06-01 2008-12-04 Dalsa Corporation Semiconductor image sensor array device, apparatus comprising such a device and method for operating such a device
EP2009911B1 (en) * 2007-06-29 2015-08-26 Omnivision Technologies, Inc. High dynamic range sensor with blooming drain
US7924333B2 (en) * 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
US7964929B2 (en) * 2007-08-23 2011-06-21 Aptina Imaging Corporation Method and apparatus providing imager pixels with shared pixel components
JP5262028B2 (en) * 2007-09-10 2013-08-14 ソニー株式会社 Image sensor and control method
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
FR2923339B1 (en) * 2007-11-05 2009-12-11 Commissariat Energie Atomique METHOD FOR READING A TWO-DIMENSIONAL PIXEL MATRIX AND DEVICE FOR IMPLEMENTING SUCH A METHOD
US20100013042A1 (en) * 2007-11-05 2010-01-21 Juhan Kim CMOS image sensor including tunable read amplifier
US8077236B2 (en) 2008-03-20 2011-12-13 Aptina Imaging Corporation Method and apparatus providing reduced metal routing in imagers
TWI433307B (en) * 2008-10-22 2014-04-01 Sony Corp Solid state image sensor, method for driving a solid state image sensor, imaging apparatus, and electronic device
JP5374110B2 (en) * 2008-10-22 2013-12-25 キヤノン株式会社 Imaging sensor and imaging apparatus
JP5241454B2 (en) * 2008-12-01 2013-07-17 キヤノン株式会社 Solid-state imaging device and imaging system using the same
FR2941327B1 (en) * 2009-01-22 2012-05-04 St Microelectronics Sa IMAGE ENTRY DEVICE COMPRISING MEANS FOR PIXEL COLLECTING.
US8405750B2 (en) * 2009-06-08 2013-03-26 Aptina Imaging Corporation Image sensors and image reconstruction methods for capturing high dynamic range images
JP4881987B2 (en) * 2009-10-06 2012-02-22 キヤノン株式会社 Solid-state imaging device and imaging device
US8039811B1 (en) * 2009-12-04 2011-10-18 X-Scan Imaging Corporation CMOS time delay integration sensor for X-ray imaging applications
US20110205384A1 (en) * 2010-02-24 2011-08-25 Panavision Imaging, Llc Variable active image area image sensor
WO2011159401A1 (en) * 2010-05-03 2011-12-22 Invisage Technologies, Inc. Devices and methods for high-resolution image and video capture
US8913153B2 (en) 2011-10-06 2014-12-16 Aptina Imaging Corporation Imaging systems and methods for generating motion-compensated high-dynamic-range images
JP5755111B2 (en) * 2011-11-14 2015-07-29 キヤノン株式会社 Driving method of imaging apparatus
US9172889B2 (en) 2012-02-09 2015-10-27 Semiconductor Components Industries, Llc Imaging systems and methods for generating auto-exposed high-dynamic-range images
US9007488B2 (en) 2012-03-08 2015-04-14 Semiconductor Components Industries, Llc Systems and methods for generating interpolated high-dynamic-range images
US9338372B2 (en) 2012-09-19 2016-05-10 Semiconductor Components Industries, Llc Column-based high dynamic range imaging systems
WO2014070927A2 (en) * 2012-10-31 2014-05-08 Invisage Technologies, Inc. Expanded-field-of-view image and video capture
JP5986524B2 (en) 2013-02-28 2016-09-06 キヤノン株式会社 Radiation imaging apparatus and radiation imaging system
JP2014168205A (en) * 2013-02-28 2014-09-11 Canon Inc Radiation imaging apparatus, radiation inspection apparatus, and signal correction method and program
JP6442144B2 (en) * 2013-02-28 2018-12-19 キヤノン株式会社 Radiation imaging apparatus, radiation imaging system, radiation imaging method and program
JP5934128B2 (en) 2013-02-28 2016-06-15 キヤノン株式会社 Radiation imaging apparatus and radiation imaging system
JP6016673B2 (en) 2013-02-28 2016-10-26 キヤノン株式会社 Radiation imaging apparatus and radiation imaging system
JP6112960B2 (en) * 2013-05-08 2017-04-12 キヤノン株式会社 Photoelectric conversion device
US9182506B2 (en) * 2013-06-28 2015-11-10 General Electric Company Methods and systems for signal communication in gamma ray detectors
WO2015114311A1 (en) * 2014-01-28 2015-08-06 Mbda Uk Limited Improved imaging method and apparatus
EP2899965A1 (en) * 2014-01-28 2015-07-29 MBDA UK Limited Improved imaging method and apparatus
JP6334203B2 (en) * 2014-02-28 2018-05-30 ソニー株式会社 Solid-state imaging device and electronic device
JP6494207B2 (en) * 2014-07-31 2019-04-03 キヤノン株式会社 Photoelectric conversion device, photoelectric conversion system, and method for driving photoelectric conversion device
US9774801B2 (en) 2014-12-05 2017-09-26 Qualcomm Incorporated Solid state image sensor with enhanced charge capacity and dynamic range
US9332200B1 (en) 2014-12-05 2016-05-03 Qualcomm Incorporated Pixel readout architecture for full well capacity extension
WO2016114153A1 (en) * 2015-01-13 2016-07-21 ソニー株式会社 Solid-state image capturing device, drive method, and electronic instrument
KR102407036B1 (en) 2015-11-03 2022-06-10 삼성전자주식회사 Image sensor and method of operating the same
US10944927B2 (en) * 2017-07-14 2021-03-09 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and operating method for improving charge transfer of image sensor device
CN111755466B (en) * 2019-03-28 2023-06-16 群创光电股份有限公司 Electronic device
KR20200118723A (en) * 2019-04-08 2020-10-16 삼성전자주식회사 Image sensor comprising pixel groups and electronic device including thereof
US11438486B2 (en) 2019-08-26 2022-09-06 Qualcomm Incorporated 3D active depth sensing with laser pulse train bursts and a gated sensor
US11443447B2 (en) * 2020-04-17 2022-09-13 Samsung Electronics Co., Ltd. Three-dimensional camera system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
US20020075388A1 (en) * 2000-10-26 2002-06-20 Takeshi Koyama Optical apparatus
US20030136837A1 (en) * 2000-06-28 2003-07-24 Amon Maurice A. Use of communication equipment and method for authenticating an item, unit and system for authenticating items, and authenticating device
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
US7045753B1 (en) * 2000-08-09 2006-05-16 Dalsa, Inc. Five transistor CMOS pixel

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739562A (en) * 1995-08-01 1998-04-14 Lucent Technologies Inc. Combined photogate and photodiode active pixel image sensor
US5973311A (en) * 1997-02-12 1999-10-26 Imation Corp Pixel array with high and low resolution mode
US5898753A (en) * 1997-06-06 1999-04-27 Schick Technologies, Inc. Apparatus for measuring bone density using active pixel sensors
US6388241B1 (en) * 1998-02-19 2002-05-14 Photobit Corporation Active pixel color linear sensor with line—packed pixel readout
KR19990084630A (en) * 1998-05-08 1999-12-06 김영환 CMOS image sensor and its driving method
JP4139931B2 (en) * 1998-06-27 2008-08-27 マグナチップセミコンダクター有限会社 Image sensor pinned photodiode and method of manufacturing the same
KR100464955B1 (en) * 1998-06-29 2005-04-06 매그나칩 반도체 유한회사 CMOS image sensor integrated with memory device
US6587146B1 (en) * 1998-11-20 2003-07-01 Eastman Kodak Company Three transistor active pixel sensor architecture with correlated double sampling
US6218656B1 (en) * 1998-12-30 2001-04-17 Eastman Kodak Company Photodiode active pixel sensor with shared reset signal row select
US6603513B1 (en) * 1999-02-16 2003-08-05 Micron Technology, Inc. Using a single control line to provide select and reset signals to image sensors in two rows of a digital imaging device
US6693670B1 (en) * 1999-07-29 2004-02-17 Vision - Sciences, Inc. Multi-photodetector unit cell
US6486913B1 (en) * 1999-09-30 2002-11-26 Intel Corporation Pixel array with shared reset circuitry
US6486504B1 (en) * 1999-10-26 2002-11-26 Eastman Kodak Company CMOS image sensor with extended dynamic range
KR20010061351A (en) * 1999-12-28 2001-07-07 박종섭 CMOS image sensor having photodiode coupled capacitor
KR100477789B1 (en) * 1999-12-28 2005-03-22 매그나칩 반도체 유한회사 Method for fabricating image sensor
KR100477788B1 (en) * 1999-12-28 2005-03-22 매그나칩 반도체 유한회사 Method for fabricating CMOS image sensor having photodiode coupled capacitor
KR100359770B1 (en) * 2000-03-02 2002-11-04 주식회사 하이닉스반도체 Active pixel circuit in CMOS image sensor
KR100386609B1 (en) * 2000-04-28 2003-06-02 주식회사 하이닉스반도체 CMOS image sensor and method for fabricating the same
US6552322B1 (en) * 2000-05-16 2003-04-22 Micron Technology, Inc. Shared photodetector pixel image sensor
DE60136963D1 (en) * 2000-11-16 2009-01-22 California Inst Of Techn PHOTODIODE CMOS IMAGING DEVICE WITH COLUMN FEEDBACK SOFT RESET
US6552323B2 (en) * 2000-12-06 2003-04-22 Eastman Kodak Company Image sensor with a shared output signal line
KR100381026B1 (en) * 2001-05-22 2003-04-23 주식회사 하이닉스반도체 CMOS Image sensor capable of increasing punch through voltage and charge integration of photodiode and method for forming the same
US6567028B2 (en) * 2001-10-12 2003-05-20 Micron Technology, Inc. Reference voltage stabilization in CMOS sensors
US6809358B2 (en) * 2002-02-05 2004-10-26 E-Phocus, Inc. Photoconductor on active pixel image sensor
US7332786B2 (en) * 2003-11-26 2008-02-19 Micron Technology, Inc. Anti-blooming storage pixel

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
US20030136837A1 (en) * 2000-06-28 2003-07-24 Amon Maurice A. Use of communication equipment and method for authenticating an item, unit and system for authenticating items, and authenticating device
US7045753B1 (en) * 2000-08-09 2006-05-16 Dalsa, Inc. Five transistor CMOS pixel
US20020075388A1 (en) * 2000-10-26 2002-06-20 Takeshi Koyama Optical apparatus

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US20050128327A1 (en) 2005-06-16
TW200526030A (en) 2005-08-01

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