US596924A
(en)
*
|
|
1898-01-04 |
|
Ash-sifter |
US4674319A
(en)
|
1985-03-20 |
1987-06-23 |
The Regents Of The University Of California |
Integrated circuit sensor
|
US4665610A
(en)
|
1985-04-22 |
1987-05-19 |
Stanford University |
Method of making a semiconductor transducer having multiple level diaphragm structure
|
US4766666A
(en)
|
1985-09-30 |
1988-08-30 |
Kabushiki Kaisha Toyota Chuo Kenkyusho |
Semiconductor pressure sensor and method of manufacturing the same
|
GB2198611B
(en)
|
1986-12-13 |
1990-04-04 |
Spectrol Reliance Ltd |
Method of forming a sealed diaphragm on a substrate
|
US4945769A
(en)
|
1989-03-06 |
1990-08-07 |
Delco Electronics Corporation |
Semiconductive structure useful as a pressure sensor
|
US4990462A
(en)
|
1989-04-12 |
1991-02-05 |
Advanced Micro Devices, Inc. |
Method for coplanar integration of semiconductor ic devices
|
US5075253A
(en)
|
1989-04-12 |
1991-12-24 |
Advanced Micro Devices, Inc. |
Method of coplanar integration of semiconductor IC devices
|
US5196355A
(en)
|
1989-04-24 |
1993-03-23 |
Ibis Technology Corporation |
Simox materials through energy variation
|
US5080730A
(en)
|
1989-04-24 |
1992-01-14 |
Ibis Technology Corporation |
Implantation profile control with surface sputtering
|
US5156903A
(en)
|
1989-12-21 |
1992-10-20 |
Sumitomo Metal Ceramics Inc. |
Multilayer ceramic substrate and manufacture thereof
|
US5053627A
(en)
|
1990-03-01 |
1991-10-01 |
Ibis Technology Corporation |
Apparatus for ion implantation
|
US5620931A
(en)
|
1990-08-17 |
1997-04-15 |
Analog Devices, Inc. |
Methods for fabricating monolithic device containing circuitry and suspended microstructure
|
EP0543901B1
(en)
|
1990-08-17 |
1995-10-04 |
Analog Devices, Inc. |
Monolithic accelerometer
|
US5417111A
(en)
|
1990-08-17 |
1995-05-23 |
Analog Devices, Inc. |
Monolithic chip containing integrated circuitry and suspended microstructure
|
US5605598A
(en)
|
1990-10-17 |
1997-02-25 |
The Charles Stark Draper Laboratory Inc. |
Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency
|
US5139624A
(en)
|
1990-12-06 |
1992-08-18 |
Sri International |
Method for making porous semiconductor membranes
|
US5288650A
(en)
|
1991-01-25 |
1994-02-22 |
Ibis Technology Corporation |
Prenucleation process for simox device fabrication
|
US6147756A
(en)
|
1992-01-22 |
2000-11-14 |
Northeastern University |
Microspectrometer with sacrificial layer integrated with integrated circuit on the same substrate
|
FR2689124A1
(en)
|
1992-03-27 |
1993-10-01 |
Adir |
Novel naphthylalkylamines, process for their preparation and pharmaceutical compositions containing them
|
JP3367113B2
(en)
*
|
1992-04-27 |
2003-01-14 |
株式会社デンソー |
Acceleration sensor
|
US5461916A
(en)
*
|
1992-08-21 |
1995-10-31 |
Nippondenso Co., Ltd. |
Mechanical force sensing semiconductor device
|
US5491604A
(en)
*
|
1992-12-11 |
1996-02-13 |
The Regents Of The University Of California |
Q-controlled microresonators and tunable electronic filters using such resonators
|
WO1994014240A1
(en)
|
1992-12-11 |
1994-06-23 |
The Regents Of The University Of California |
Microelectromechanical signal processors
|
US5338416A
(en)
|
1993-02-05 |
1994-08-16 |
Massachusetts Institute Of Technology |
Electrochemical etching process
|
DE69427258T2
(en)
*
|
1993-03-31 |
2001-12-06 |
Toray Industries |
FIBERBOARD IMPREGNATED WITH RESIN
|
US5369544A
(en)
|
1993-04-05 |
1994-11-29 |
Ford Motor Company |
Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
|
DE4317274A1
(en)
|
1993-05-25 |
1994-12-01 |
Bosch Gmbh Robert |
Process for the production of surface-micromechanical structures
|
US6199874B1
(en)
|
1993-05-26 |
2001-03-13 |
Cornell Research Foundation Inc. |
Microelectromechanical accelerometer for automotive applications
|
US6149190A
(en)
|
1993-05-26 |
2000-11-21 |
Kionix, Inc. |
Micromechanical accelerometer for automotive applications
|
KR950002458A
(en)
*
|
1993-06-02 |
1995-01-04 |
이헌조 |
Video signal compression / extension device
|
US5616514A
(en)
|
1993-06-03 |
1997-04-01 |
Robert Bosch Gmbh |
Method of fabricating a micromechanical sensor
|
US5476819A
(en)
|
1993-07-26 |
1995-12-19 |
Litton Systems, Inc. |
Substrate anchor for undercut silicon on insulator microstructures
|
KR0155141B1
(en)
|
1993-12-24 |
1998-10-15 |
손병기 |
Method for manufacturing a semiconductor device using porous silicons
|
US5660680A
(en)
|
1994-03-07 |
1997-08-26 |
The Regents Of The University Of California |
Method for fabrication of high vertical aspect ratio thin film structures
|
US5645684A
(en)
|
1994-03-07 |
1997-07-08 |
The Regents Of The University Of California |
Multilayer high vertical aspect ratio thin film structures
|
US5839062A
(en)
|
1994-03-18 |
1998-11-17 |
The Regents Of The University Of California |
Mixing, modulation and demodulation via electromechanical resonators
|
DE4419844B4
(en)
|
1994-06-07 |
2009-11-19 |
Robert Bosch Gmbh |
accelerometer
|
US5737112A
(en)
*
|
1994-07-07 |
1998-04-07 |
Asahi Kogaku Kogyo Kabushiki Kaisha |
Scanning optical systems
|
US5613611A
(en)
|
1994-07-29 |
1997-03-25 |
Analog Devices, Inc. |
Carrier for integrated circuit package
|
US5510156A
(en)
|
1994-08-23 |
1996-04-23 |
Analog Devices, Inc. |
Micromechanical structure with textured surface and method for making same
|
US5517123A
(en)
|
1994-08-26 |
1996-05-14 |
Analog Devices, Inc. |
High sensitivity integrated micromechanical electrostatic potential sensor
|
GB9417265D0
(en)
*
|
1994-08-26 |
1994-10-19 |
Inmos Ltd |
Controlling capacitive load
|
US5725729A
(en)
|
1994-09-26 |
1998-03-10 |
The Charles Stark Draper Laboratory, Inc. |
Process for micromechanical fabrication
|
DE4442033C2
(en)
|
1994-11-25 |
1997-12-18 |
Bosch Gmbh Robert |
Yaw rate sensor
|
US5640039A
(en)
|
1994-12-01 |
1997-06-17 |
Analog Devices, Inc. |
Conductive plane beneath suspended microstructure
|
US5583290A
(en)
|
1994-12-20 |
1996-12-10 |
Analog Devices, Inc. |
Micromechanical apparatus with limited actuation bandwidth
|
DE19503236B4
(en)
|
1995-02-02 |
2006-05-24 |
Robert Bosch Gmbh |
Sensor made of a multilayer substrate
|
FR2732467B1
(en)
|
1995-02-10 |
1999-09-17 |
Bosch Gmbh Robert |
ACCELERATION SENSOR AND METHOD FOR MANUFACTURING SUCH A SENSOR
|
DE19509868A1
(en)
|
1995-03-17 |
1996-09-19 |
Siemens Ag |
Micromechanical semiconductor component
|
US5504026A
(en)
|
1995-04-14 |
1996-04-02 |
Analog Devices, Inc. |
Methods for planarization and encapsulation of micromechanical devices in semiconductor processes
|
DE19519488B4
(en)
|
1995-05-27 |
2005-03-10 |
Bosch Gmbh Robert |
Rate of rotation sensor with two acceleration sensors
|
US5922212A
(en)
|
1995-06-08 |
1999-07-13 |
Nippondenso Co., Ltd |
Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body
|
JP3361916B2
(en)
|
1995-06-28 |
2003-01-07 |
シャープ株式会社 |
Method of forming microstructure
|
DE19526691A1
(en)
|
1995-07-21 |
1997-01-23 |
Bosch Gmbh Robert |
Process for the production of acceleration sensors
|
DE19526903B4
(en)
|
1995-07-22 |
2005-03-10 |
Bosch Gmbh Robert |
Yaw rate sensor
|
DE19530007C2
(en)
|
1995-08-16 |
1998-11-26 |
Bosch Gmbh Robert |
Yaw rate sensor
|
DE19539049A1
(en)
*
|
1995-10-20 |
1997-04-24 |
Bosch Gmbh Robert |
Process for the production of a Coriolis rotation rate sensor
|
JPH09115999A
(en)
|
1995-10-23 |
1997-05-02 |
Denso Corp |
Semiconductor integrated circuit device
|
JP3430771B2
(en)
|
1996-02-05 |
2003-07-28 |
株式会社デンソー |
Method of manufacturing semiconductor dynamic quantity sensor
|
US5761957A
(en)
|
1996-02-08 |
1998-06-09 |
Denso Corporation |
Semiconductor pressure sensor that suppresses non-linear temperature characteristics
|
US5818227A
(en)
|
1996-02-22 |
1998-10-06 |
Analog Devices, Inc. |
Rotatable micromachined device for sensing magnetic fields
|
US5880369A
(en)
|
1996-03-15 |
1999-03-09 |
Analog Devices, Inc. |
Micromachined device with enhanced dimensional control
|
US5747353A
(en)
|
1996-04-16 |
1998-05-05 |
National Semiconductor Corporation |
Method of making surface micro-machined accelerometer using silicon-on-insulator technology
|
JP3423855B2
(en)
|
1996-04-26 |
2003-07-07 |
株式会社デンソー |
Electronic component mounting structure and electronic component mounting method
|
DE19617666B4
(en)
|
1996-05-03 |
2006-04-20 |
Robert Bosch Gmbh |
Micromechanical rotation rate sensor
|
US5992233A
(en)
|
1996-05-31 |
1999-11-30 |
The Regents Of The University Of California |
Micromachined Z-axis vibratory rate gyroscope
|
US6250156B1
(en)
*
|
1996-05-31 |
2001-06-26 |
The Regents Of The University Of California |
Dual-mass micromachined vibratory rate gyroscope
|
US5882532A
(en)
|
1996-05-31 |
1999-03-16 |
Hewlett-Packard Company |
Fabrication of single-crystal silicon structures using sacrificial-layer wafer bonding
|
US5919364A
(en)
|
1996-06-24 |
1999-07-06 |
Regents Of The University Of California |
Microfabricated filter and shell constructed with a permeable membrane
|
JPH1047971A
(en)
|
1996-08-05 |
1998-02-20 |
Nippon Soken Inc |
Angular velocity sensor
|
DE19632060B4
(en)
|
1996-08-09 |
2012-05-03 |
Robert Bosch Gmbh |
Method for producing a rotation rate sensor
|
JP3584635B2
(en)
*
|
1996-10-04 |
2004-11-04 |
株式会社デンソー |
Semiconductor device and manufacturing method thereof
|
US5869207A
(en)
*
|
1996-12-09 |
1999-02-09 |
Valence Technology, Inc. |
Stabilized electrochemical cell
|
US5948991A
(en)
|
1996-12-09 |
1999-09-07 |
Denso Corporation |
Semiconductor physical quantity sensor device having semiconductor sensor chip integrated with semiconductor circuit chip
|
US5962949A
(en)
|
1996-12-16 |
1999-10-05 |
Mcnc |
Microelectromechanical positioning apparatus
|
JP3568749B2
(en)
|
1996-12-17 |
2004-09-22 |
株式会社デンソー |
Dry etching method for semiconductor
|
DE19700734B4
(en)
|
1997-01-11 |
2006-06-01 |
Robert Bosch Gmbh |
Method for producing sensors and non-isolated wafer stacks
|
US5898991A
(en)
*
|
1997-01-16 |
1999-05-04 |
International Business Machines Corporation |
Methods of fabrication of coaxial vias and magnetic devices
|
JP3526383B2
(en)
|
1997-02-12 |
2004-05-10 |
株式会社リコー |
Recording device
|
JP3345878B2
(en)
|
1997-02-17 |
2002-11-18 |
株式会社デンソー |
Manufacturing method of electronic circuit device
|
US6146917A
(en)
|
1997-03-03 |
2000-11-14 |
Ford Motor Company |
Fabrication method for encapsulated micromachined structures
|
US6191007B1
(en)
*
|
1997-04-28 |
2001-02-20 |
Denso Corporation |
Method for manufacturing a semiconductor substrate
|
US5969249A
(en)
|
1997-05-07 |
1999-10-19 |
The Regents Of The University Of California |
Resonant accelerometer with flexural lever leverage system
|
US6142358A
(en)
|
1997-05-31 |
2000-11-07 |
The Regents Of The University Of California |
Wafer-to-wafer transfer of microstructures using break-away tethers
|
US6388279B1
(en)
*
|
1997-06-11 |
2002-05-14 |
Denso Corporation |
Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
|
JPH112526A
(en)
|
1997-06-13 |
1999-01-06 |
Mitsubishi Electric Corp |
Vibrating angular velocity sensor
|
US6121552A
(en)
*
|
1997-06-13 |
2000-09-19 |
The Regents Of The University Of Caliofornia |
Microfabricated high aspect ratio device with an electrical isolation trench
|
US6199430B1
(en)
*
|
1997-06-17 |
2001-03-13 |
Denso Corporation |
Acceleration sensor with ring-shaped movable electrode
|
JP3555388B2
(en)
|
1997-06-30 |
2004-08-18 |
株式会社デンソー |
Semiconductor yaw rate sensor
|
US5928207A
(en)
*
|
1997-06-30 |
1999-07-27 |
The Regents Of The University Of California |
Microneedle with isotropically etched tip, and method of fabricating such a device
|
AUPP653898A0
(en)
*
|
1998-10-16 |
1998-11-05 |
Silverbrook Research Pty Ltd |
Micromechanical device and method (ij46F)
|
US6035714A
(en)
|
1997-09-08 |
2000-03-14 |
The Regents Of The University Of Michigan |
Microelectromechanical capacitive accelerometer and method of making same
|
US6396372B1
(en)
*
|
1997-10-21 |
2002-05-28 |
Omron Corporation |
Electrostatic micro relay
|
US5986316A
(en)
|
1997-11-26 |
1999-11-16 |
Denso Corporation |
Semiconductor type physical quantity sensor
|
JP3900644B2
(en)
*
|
1998-01-16 |
2007-04-04 |
株式会社デンソー |
Manufacturing method of semiconductor pressure sensor
|
US6065341A
(en)
|
1998-02-18 |
2000-05-23 |
Denso Corporation |
Semiconductor physical quantity sensor with stopper portion
|
DE19808549B4
(en)
|
1998-02-28 |
2008-07-10 |
Robert Bosch Gmbh |
Micromechanical comb structure as well as acceleration sensor and drive with this comb structure
|
DE19817311B4
(en)
*
|
1998-04-18 |
2007-03-22 |
Robert Bosch Gmbh |
Manufacturing method for micromechanical component
|
DE19820816B4
(en)
|
1998-05-09 |
2006-05-11 |
Robert Bosch Gmbh |
Bondpad structure and corresponding manufacturing method
|
JP3307328B2
(en)
|
1998-05-11 |
2002-07-24 |
株式会社デンソー |
Semiconductor dynamic quantity sensor
|
US6136630A
(en)
|
1998-06-04 |
2000-10-24 |
The Regents Of The University Of Michigan |
Method of making a micromechanical device from a single crystal semiconductor substrate and monolithic sensor formed thereby
|
US6389899B1
(en)
*
|
1998-06-09 |
2002-05-21 |
The Board Of Trustees Of The Leland Stanford Junior University |
In-plane micromachined accelerometer and bridge circuit having same
|
JP4134384B2
(en)
*
|
1998-07-07 |
2008-08-20 |
株式会社デンソー |
Manufacturing method of semiconductor dynamic quantity sensor
|
JP4158234B2
(en)
*
|
1998-07-28 |
2008-10-01 |
株式会社デンソー |
Semiconductor dynamic quantity sensor and manufacturing method thereof
|
JP3309808B2
(en)
*
|
1998-08-04 |
2002-07-29 |
株式会社デンソー |
Pressure detector
|
US6163643A
(en)
|
1998-08-12 |
2000-12-19 |
Lucent Technologies Inc. |
Micro-mechanical variable optical attenuator
|
US6204085B1
(en)
*
|
1998-09-15 |
2001-03-20 |
Texas Instruments Incorporated |
Reduced deformation of micromechanical devices through thermal stabilization
|
US6156652A
(en)
|
1998-10-09 |
2000-12-05 |
The United States Of America As Represented By The Secretary Of The Air Force |
Post-process metallization interconnects for microelectromechanical systems
|
US6153839A
(en)
|
1998-10-22 |
2000-11-28 |
Northeastern University |
Micromechanical switching devices
|
JP2000138381A
(en)
*
|
1998-11-02 |
2000-05-16 |
Toyota Central Res & Dev Lab Inc |
Sealed container and its manufacture
|
US6534340B1
(en)
*
|
1998-11-18 |
2003-03-18 |
Analog Devices, Inc. |
Cover cap for semiconductor wafer devices
|
JP4214584B2
(en)
*
|
1998-11-27 |
2009-01-28 |
株式会社デンソー |
Semiconductor dynamic quantity sensor and manufacturing method thereof
|
JP2000223446A
(en)
*
|
1998-11-27 |
2000-08-11 |
Denso Corp |
Semiconductor device and manufacture thereof
|
US6379989B1
(en)
*
|
1998-12-23 |
2002-04-30 |
Xerox Corporation |
Process for manufacture of microoptomechanical structures
|
US6249073B1
(en)
*
|
1999-01-14 |
2001-06-19 |
The Regents Of The University Of Michigan |
Device including a micromechanical resonator having an operating frequency and method of extending same
|
AU3346000A
(en)
*
|
1999-01-15 |
2000-08-01 |
Regents Of The University Of California, The |
Polycrystalline silicon germanium films for forming micro-electromechanical systems
|
US6137206A
(en)
|
1999-03-23 |
2000-10-24 |
Cronos Integrated Microsystems, Inc. |
Microelectromechanical rotary structures
|
US6507044B1
(en)
*
|
1999-03-25 |
2003-01-14 |
Advanced Micro Devices, Inc. |
Position-selective and material-selective silicon etching to form measurement structures for semiconductor fabrication
|
US6446486B1
(en)
*
|
1999-04-26 |
2002-09-10 |
Sandia Corporation |
Micromachine friction test apparatus
|
US6218762B1
(en)
*
|
1999-05-03 |
2001-04-17 |
Mcnc |
Multi-dimensional scalable displacement enabled microelectromechanical actuator structures and arrays
|
JP4389326B2
(en)
*
|
1999-05-06 |
2009-12-24 |
株式会社デンソー |
Pressure sensor
|
US6507138B1
(en)
*
|
1999-06-24 |
2003-01-14 |
Sandia Corporation |
Very compact, high-stability electrostatic actuator featuring contact-free self-limiting displacement
|
US6248642B1
(en)
*
|
1999-06-24 |
2001-06-19 |
Ibis Technology Corporation |
SIMOX using controlled water vapor for oxygen implants
|
US6230567B1
(en)
*
|
1999-08-03 |
2001-05-15 |
The Charles Stark Draper Laboratory, Inc. |
Low thermal strain flexure support for a micromechanical device
|
US6386032B1
(en)
*
|
1999-08-26 |
2002-05-14 |
Analog Devices Imi, Inc. |
Micro-machined accelerometer with improved transfer characteristics
|
DE69938658D1
(en)
*
|
1999-09-10 |
2008-06-19 |
St Microelectronics Srl |
Insensitive to mechanical stress microelectromechanical structure
|
US6512255B2
(en)
*
|
1999-09-17 |
2003-01-28 |
Denso Corporation |
Semiconductor pressure sensor device having sensor chip covered with protective member
|
KR100343211B1
(en)
*
|
1999-11-04 |
2002-07-10 |
윤종용 |
Fablication method of Micro Electromechanical System structure which can be packaged in the state of wafer level
|
US6524890B2
(en)
*
|
1999-11-17 |
2003-02-25 |
Denso Corporation |
Method for manufacturing semiconductor device having element isolation structure
|
DE19961578A1
(en)
*
|
1999-12-21 |
2001-06-28 |
Bosch Gmbh Robert |
Sensor comprises a micromechanical structure based on silicon integrated in the sensor chamber of a base wafer and a cover made of a transparent deposition layer and a sealing layer
|
KR100327596B1
(en)
*
|
1999-12-31 |
2002-03-15 |
박종섭 |
Method for fabricating contact plug of semiconductor device using Selective Epitaxial Growth of silicon process
|
US6352935B1
(en)
*
|
2000-01-18 |
2002-03-05 |
Analog Devices, Inc. |
Method of forming a cover cap for semiconductor wafer devices
|
US6393913B1
(en)
*
|
2000-02-08 |
2002-05-28 |
Sandia Corporation |
Microelectromechanical dual-mass resonator structure
|
DE10005555A1
(en)
*
|
2000-02-09 |
2001-08-16 |
Bosch Gmbh Robert |
Micromechanical component and corresponding manufacturing method
|
DE10006035A1
(en)
*
|
2000-02-10 |
2001-08-16 |
Bosch Gmbh Robert |
Micro-mechanical component production, used as sensor element or actuator element, comprises providing functional element and/or functional layer with protective layer
|
US6507082B2
(en)
*
|
2000-02-22 |
2003-01-14 |
Texas Instruments Incorporated |
Flip-chip assembly of protected micromechanical devices
|
US6392144B1
(en)
*
|
2000-03-01 |
2002-05-21 |
Sandia Corporation |
Micromechanical die attachment surcharge
|
DE10017422A1
(en)
*
|
2000-04-07 |
2001-10-11 |
Bosch Gmbh Robert |
Micromechanical component and corresponding manufacturing process
|
DE10017976A1
(en)
*
|
2000-04-11 |
2001-10-18 |
Bosch Gmbh Robert |
Micromechanical component and corresponding manufacturing method
|
US6373007B1
(en)
*
|
2000-04-19 |
2002-04-16 |
The United States Of America As Represented By The Secretary Of The Air Force |
Series and shunt mems RF switch
|
JP2001326367A
(en)
*
|
2000-05-12 |
2001-11-22 |
Denso Corp |
Sensor and method for manufacturing the same
|
JP3525862B2
(en)
*
|
2000-05-22 |
2004-05-10 |
トヨタ自動車株式会社 |
Sensor element and sensor device
|
US6396711B1
(en)
*
|
2000-06-06 |
2002-05-28 |
Agere Systems Guardian Corp. |
Interconnecting micromechanical devices
|
US6508126B2
(en)
*
|
2000-07-21 |
2003-01-21 |
Denso Corporation |
Dynamic quantity sensor having movable and fixed electrodes with high rigidity
|
US6569754B2
(en)
*
|
2000-08-24 |
2003-05-27 |
The Regents Of The University Of Michigan |
Method for making a module including a microplatform
|
US6521965B1
(en)
*
|
2000-09-12 |
2003-02-18 |
Robert Bosch Gmbh |
Integrated pressure sensor
|
US6621137B1
(en)
*
|
2000-10-12 |
2003-09-16 |
Intel Corporation |
MEMS device integrated chip package, and method of making same
|
US6946366B2
(en)
*
|
2000-12-05 |
2005-09-20 |
Analog Devices, Inc. |
Method and device for protecting micro electromechanical systems structures during dicing of a wafer
|
JP3964184B2
(en)
*
|
2000-12-28 |
2007-08-22 |
株式会社デンソー |
Multilayer piezoelectric actuator
|
DE10104868A1
(en)
*
|
2001-02-03 |
2002-08-22 |
Bosch Gmbh Robert |
Micromechanical component and a method for producing a micromechanical component
|
US6645757B1
(en)
*
|
2001-02-08 |
2003-11-11 |
Sandia Corporation |
Apparatus and method for transforming living cells
|
US6555904B1
(en)
*
|
2001-03-05 |
2003-04-29 |
Analog Devices, Inc. |
Electrically shielded glass lid for a packaged device
|
GB0107404D0
(en)
*
|
2001-03-23 |
2001-05-16 |
Koninkl Philips Electronics Nv |
Display substrate and display device
|
US6531767B2
(en)
*
|
2001-04-09 |
2003-03-11 |
Analog Devices Inc. |
Critically aligned optical MEMS dies for large packaged substrate arrays and method of manufacture
|
US6552404B1
(en)
*
|
2001-04-17 |
2003-04-22 |
Analog Devices, Inc. |
Integratable transducer structure
|
US6508561B1
(en)
*
|
2001-10-17 |
2003-01-21 |
Analog Devices, Inc. |
Optical mirror coatings for high-temperature diffusion barriers and mirror shaping
|
US6792804B2
(en)
*
|
2001-10-19 |
2004-09-21 |
Kionix, Inc. |
Sensor for measuring out-of-plane acceleration
|
US7045459B2
(en)
*
|
2002-02-19 |
2006-05-16 |
Northrop Grumman Corporation |
Thin film encapsulation of MEMS devices
|
US6731513B2
(en)
*
|
2002-03-15 |
2004-05-04 |
Memx, Inc. |
Shielded multi-conductor interconnect bus for MEMS
|
US6747340B2
(en)
*
|
2002-03-15 |
2004-06-08 |
Memx, Inc. |
Multi-level shielded multi-conductor interconnect bus for MEMS
|
JP3712123B2
(en)
*
|
2002-03-25 |
2005-11-02 |
富士通メディアデバイス株式会社 |
Variable capacitor and manufacturing method thereof
|
US6882019B2
(en)
*
|
2002-05-28 |
2005-04-19 |
Hewlett-Packard Development Company, L.P. |
Movable micro-electromechanical device
|
US6909589B2
(en)
*
|
2002-11-20 |
2005-06-21 |
Corporation For National Research Initiatives |
MEMS-based variable capacitor
|
US7122395B2
(en)
*
|
2002-12-23 |
2006-10-17 |
Motorola, Inc. |
Method of forming semiconductor devices through epitaxy
|
US6952041B2
(en)
*
|
2003-07-25 |
2005-10-04 |
Robert Bosch Gmbh |
Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same
|