WO2005007936A2 - Ultrahard diamonds and method of making thereof - Google Patents
Ultrahard diamonds and method of making thereof Download PDFInfo
- Publication number
- WO2005007936A2 WO2005007936A2 PCT/US2004/022611 US2004022611W WO2005007936A2 WO 2005007936 A2 WO2005007936 A2 WO 2005007936A2 US 2004022611 W US2004022611 W US 2004022611W WO 2005007936 A2 WO2005007936 A2 WO 2005007936A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- single crystal
- crystal diamond
- diamond
- gpa
- hardness
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/26—Preparation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/279—Diamond only control of diamond crystallography
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/76—Television signal recording
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B2220/00—Record carriers by type
- G11B2220/20—Disc-shaped record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B2220/00—Record carriers by type
- G11B2220/60—Solid state media
- G11B2220/65—Solid state media wherein solid state memory is used for storing indexing information or metadata
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/76—Television signal recording
- H04N5/765—Interface circuits between an apparatus for recording and another apparatus
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/76—Television signal recording
- H04N5/765—Interface circuits between an apparatus for recording and another apparatus
- H04N5/775—Interface circuits between an apparatus for recording and another apparatus between a recording apparatus and a television receiver
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/76—Television signal recording
- H04N5/78—Television signal recording using magnetic recording
- H04N5/781—Television signal recording using magnetic recording on disks or drums
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/79—Processing of colour television signals in connection with recording
- H04N9/80—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback
- H04N9/804—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback involving pulse code modulation of the colour picture signal components
- H04N9/8042—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback involving pulse code modulation of the colour picture signal components involving data reduction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/79—Processing of colour television signals in connection with recording
- H04N9/80—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback
- H04N9/82—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback the individual colour picture signal components being recorded simultaneously only
- H04N9/8205—Transformation of the television signal for recording, e.g. modulation, frequency changing; Inverse transformation for playback the individual colour picture signal components being recorded simultaneously only involving the multiplexing of an additional signal and the colour video signal
Abstract
Description
Claims
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006520304A JP4960090B2 (en) | 2003-07-14 | 2004-07-14 | Extremely hard diamond and its manufacturing method |
KR1020067000915A KR101151768B1 (en) | 2003-07-14 | 2004-07-14 | Ultrahard diamonds and method of making thereof |
BRPI0412536-3A BRPI0412536A (en) | 2003-07-14 | 2004-07-14 | ultra hard diamonds and method of making them |
EP04786065.5A EP1664394B1 (en) | 2003-07-14 | 2004-07-14 | Ultrahard diamonds and method of making thereof |
CN2004800201560A CN1942610B (en) | 2003-07-14 | 2004-07-14 | Ultrahard diamonds and method of making thereof |
CA2532362A CA2532362C (en) | 2003-07-14 | 2004-07-14 | Ultrahard diamonds and method of making thereof |
AU2004258192A AU2004258192B2 (en) | 2003-07-14 | 2004-07-14 | Ultrahard diamonds and method of making thereof |
IL173101A IL173101A (en) | 2003-07-14 | 2006-01-12 | Ultrahard diamonds and mpcvd technique of making them |
HK07109472.1A HK1101705A1 (en) | 2003-07-14 | 2007-08-31 | Ultrahard diamonds and method of making thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48643503P | 2003-07-14 | 2003-07-14 | |
US60/486,435 | 2003-07-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005007936A2 true WO2005007936A2 (en) | 2005-01-27 |
WO2005007936A3 WO2005007936A3 (en) | 2006-07-20 |
Family
ID=34079231
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/022610 WO2005007935A2 (en) | 2003-07-14 | 2004-07-14 | Tough diamonds and method of making thereof |
PCT/US2004/022611 WO2005007936A2 (en) | 2003-07-14 | 2004-07-14 | Ultrahard diamonds and method of making thereof |
PCT/US2004/022612 WO2005007937A2 (en) | 2003-07-14 | 2004-07-14 | Annealing single crystal chemical vapor deposition diamonds |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/022610 WO2005007935A2 (en) | 2003-07-14 | 2004-07-14 | Tough diamonds and method of making thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/022612 WO2005007937A2 (en) | 2003-07-14 | 2004-07-14 | Annealing single crystal chemical vapor deposition diamonds |
Country Status (14)
Country | Link |
---|---|
US (7) | US7115241B2 (en) |
EP (3) | EP1663866A4 (en) |
JP (3) | JP2007531679A (en) |
KR (3) | KR101111690B1 (en) |
CN (3) | CN100519831C (en) |
AU (3) | AU2004258193B2 (en) |
BR (3) | BRPI0412647A (en) |
CA (3) | CA2532227A1 (en) |
HK (3) | HK1093334A1 (en) |
IL (4) | IL173100A (en) |
RU (3) | RU2325323C2 (en) |
TW (3) | TWI345000B (en) |
WO (3) | WO2005007935A2 (en) |
ZA (3) | ZA200600885B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1807346A2 (en) * | 2004-09-10 | 2007-07-18 | Carnegie Institution Of Washington | Ultratouch cvd single crystal diamond and three dimensional growth thereof |
US8110041B2 (en) | 2002-09-06 | 2012-02-07 | Daniel James Twitchen | Coloured diamond |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7115241B2 (en) * | 2003-07-14 | 2006-10-03 | Carnegie Institution Of Washington | Ultrahard diamonds and method of making thereof |
CN1914126B (en) * | 2003-12-12 | 2010-09-29 | 六号元素有限公司 | Method of incorporating a mark in CVD diamond |
JP5002982B2 (en) * | 2005-04-15 | 2012-08-15 | 住友電気工業株式会社 | Method for producing single crystal diamond |
US8641999B2 (en) * | 2005-07-11 | 2014-02-04 | SCIO Diamond Technology Corporation | Carbon grit |
TWI410538B (en) * | 2005-11-15 | 2013-10-01 | Carnegie Inst Of Washington | New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate |
JP5284575B2 (en) * | 2006-10-31 | 2013-09-11 | 住友電気工業株式会社 | Diamond single crystal and manufacturing method thereof |
EP2215291A1 (en) * | 2007-10-02 | 2010-08-11 | Carnegie Institution Of Washington | Low pressure method annealing diamonds |
US9487858B2 (en) * | 2008-03-13 | 2016-11-08 | Board Of Trustees Of Michigan State University | Process and apparatus for diamond synthesis |
JP5539968B2 (en) * | 2008-05-05 | 2014-07-02 | カーネギー インスチチューション オブ ワシントン | Super tough single crystal boron doped diamond |
US20100028556A1 (en) * | 2008-05-09 | 2010-02-04 | Apollo Diamond Gemstone Corporation | Chemical vapor deposition colored diamond |
WO2010068419A2 (en) * | 2008-11-25 | 2010-06-17 | Carnegie Institution Of Washington | Production of single crystal cvd diamond rapid growth rate |
US20100192474A1 (en) * | 2009-01-30 | 2010-08-05 | Lehigh University | Ultrahard stishovite nanoparticles and methods of manufacture |
JP5891564B2 (en) * | 2009-06-26 | 2016-03-23 | エレメント シックス リミテッド | Method for producing fancy pale blue or fancy pale blue / green single crystal CVD diamond and the resulting product |
US9017632B2 (en) * | 2009-06-26 | 2015-04-28 | Element Six Technologies Limited | Diamond material |
CN101705478B (en) * | 2009-12-04 | 2011-06-01 | 北京科技大学 | Method for improving strength of free-standing diamond film |
WO2011146460A1 (en) | 2010-05-17 | 2011-11-24 | Carnegie Institution Of Washington | Production of large, high purity single crystal cvd diamond |
SG179318A1 (en) * | 2010-09-27 | 2012-04-27 | Gemesis Company S Pte Ltd | Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
GB201121642D0 (en) | 2011-12-16 | 2012-01-25 | Element Six Ltd | Single crtstal cvd synthetic diamond material |
GB201205743D0 (en) * | 2012-03-30 | 2012-05-16 | Element Six Ltd | Pressure cartridge |
JP5527628B2 (en) * | 2012-04-09 | 2014-06-18 | 住友電気工業株式会社 | Diamond single crystal |
US9469918B2 (en) | 2014-01-24 | 2016-10-18 | Ii-Vi Incorporated | Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon |
US11753740B2 (en) * | 2019-11-18 | 2023-09-12 | Shin-Etsu Chemical Co., Ltd. | Diamond substrate and method for manufacturing the same |
CN111778553A (en) * | 2020-07-29 | 2020-10-16 | 哈尔滨工业大学 | Seed crystal continuous thinning plasma annealing method for improving quality of CVD single crystal diamond |
CN113816737B (en) * | 2021-09-09 | 2022-10-11 | 四川大学 | Method for efficiently preparing transparent diamond material |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3745623A (en) | 1971-12-27 | 1973-07-17 | Gen Electric | Diamond tools for machining |
US3913280A (en) | 1971-01-29 | 1975-10-21 | Megadiamond Corp | Polycrystalline diamond composites |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2620252B2 (en) * | 1987-09-17 | 1997-06-11 | 住友電気工業株式会社 | Method for producing nitrogen-containing hard carbon film |
US4985226A (en) * | 1988-06-20 | 1991-01-15 | Sumitomo Electric Industries, Ltd. | Hole-burning material and production thereof |
JP2921063B2 (en) * | 1990-08-22 | 1999-07-19 | 住友電気工業株式会社 | Gas phase synthesis of high quality diamond |
JP3077206B2 (en) * | 1991-01-10 | 2000-08-14 | 住友電気工業株式会社 | Diamond film and method of manufacturing the same |
US5397428A (en) * | 1991-12-20 | 1995-03-14 | The University Of North Carolina At Chapel Hill | Nucleation enhancement for chemical vapor deposition of diamond |
US5443032A (en) * | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
RU2006538C1 (en) * | 1992-07-14 | 1994-01-30 | Акционерное общество "Компакт Лтд" | Diamond growing method |
JPH07331441A (en) * | 1994-03-11 | 1995-12-19 | General Electric Co <Ge> | Reinforced chemically vapor-deposited diamond |
JP3484749B2 (en) * | 1994-04-04 | 2004-01-06 | 住友電気工業株式会社 | Diamond synthesis method |
US5451430A (en) * | 1994-05-05 | 1995-09-19 | General Electric Company | Method for enhancing the toughness of CVD diamond |
JP3728465B2 (en) * | 1994-11-25 | 2005-12-21 | 株式会社神戸製鋼所 | Method for forming single crystal diamond film |
US5653800A (en) * | 1995-08-03 | 1997-08-05 | Eneco, Inc. | Method for producing N-type semiconducting diamond |
JPH0948694A (en) * | 1995-08-04 | 1997-02-18 | Kobe Steel Ltd | Method for forming diamond single crystal film |
RU2099283C1 (en) * | 1996-06-05 | 1997-12-20 | Закрытое акционерное общество "Техно-ТМ" | Diamond-like carbon-based coating and method of manufacturing thereof |
JP3125046B2 (en) * | 1997-11-21 | 2001-01-15 | 工業技術院長 | Diamond single crystal thin film manufacturing method |
US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
WO2000018518A1 (en) * | 1998-10-01 | 2000-04-06 | The Uab Research Foundation | A process for ultra smooth diamond coating on metals and uses thereof |
RU2288302C2 (en) | 2000-06-15 | 2006-11-27 | Элемент Сикс (Пти) Лтд. | Mono-crystal diamond produced by chemical deposition method from gas phase and method of production of such diamond |
RU2202513C1 (en) * | 2001-10-03 | 2003-04-20 | Санкт-Петербургский государственный электротехнический университет | Method of growing layer of hard carbon |
UA81614C2 (en) * | 2001-11-07 | 2008-01-25 | Карнеги Инститьюшн Ов Вашингтон | Device for producing of diamonts, unit for sample holding (variants) and method for producing of diamonds (variants) |
US6811610B2 (en) | 2002-06-03 | 2004-11-02 | Diamond Innovations, Inc. | Method of making enhanced CVD diamond |
US7115241B2 (en) * | 2003-07-14 | 2006-10-03 | Carnegie Institution Of Washington | Ultrahard diamonds and method of making thereof |
JP4547493B2 (en) * | 2006-02-08 | 2010-09-22 | 独立行政法人産業技術総合研究所 | Method for producing diamond single crystal and diamond single crystal |
-
2004
- 2004-07-13 US US10/889,170 patent/US7115241B2/en active Active
- 2004-07-13 US US10/889,169 patent/US7157067B2/en not_active Expired - Fee Related
- 2004-07-13 US US10/889,171 patent/US20050025886A1/en not_active Abandoned
- 2004-07-14 TW TW093120995A patent/TWI345000B/en not_active IP Right Cessation
- 2004-07-14 EP EP04786064A patent/EP1663866A4/en not_active Withdrawn
- 2004-07-14 WO PCT/US2004/022610 patent/WO2005007935A2/en active Application Filing
- 2004-07-14 CN CNB2004800201537A patent/CN100519831C/en active Active
- 2004-07-14 AU AU2004258193A patent/AU2004258193B2/en not_active Ceased
- 2004-07-14 JP JP2006520303A patent/JP2007531679A/en active Pending
- 2004-07-14 RU RU2006104555/15A patent/RU2325323C2/en not_active IP Right Cessation
- 2004-07-14 CN CN2004800201560A patent/CN1942610B/en active Active
- 2004-07-14 JP JP2006520304A patent/JP4960090B2/en active Active
- 2004-07-14 AU AU2004258191A patent/AU2004258191B2/en not_active Ceased
- 2004-07-14 CA CA002532227A patent/CA2532227A1/en not_active Abandoned
- 2004-07-14 BR BRPI0412647-5A patent/BRPI0412647A/en not_active Application Discontinuation
- 2004-07-14 BR BRPI0411984-3A patent/BRPI0411984A/en not_active Application Discontinuation
- 2004-07-14 CA CA2532384A patent/CA2532384C/en active Active
- 2004-07-14 KR KR1020067000911A patent/KR101111690B1/en active IP Right Grant
- 2004-07-14 KR KR1020067000917A patent/KR101277228B1/en not_active IP Right Cessation
- 2004-07-14 WO PCT/US2004/022611 patent/WO2005007936A2/en active Application Filing
- 2004-07-14 CA CA2532362A patent/CA2532362C/en active Active
- 2004-07-14 AU AU2004258192A patent/AU2004258192B2/en not_active Ceased
- 2004-07-14 TW TW093120998A patent/TWI371506B/en active
- 2004-07-14 EP EP04786065.5A patent/EP1664394B1/en active Active
- 2004-07-14 TW TW093120996A patent/TWI342902B/en not_active IP Right Cessation
- 2004-07-14 BR BRPI0412536-3A patent/BRPI0412536A/en not_active Application Discontinuation
- 2004-07-14 WO PCT/US2004/022612 patent/WO2005007937A2/en active Application Filing
- 2004-07-14 RU RU2006104552/02A patent/RU2324764C2/en active
- 2004-07-14 RU RU2006104551/15A patent/RU2323281C2/en active
- 2004-07-14 KR KR1020067000915A patent/KR101151768B1/en active IP Right Grant
- 2004-07-14 JP JP2006520305A patent/JP4846578B2/en active Active
- 2004-07-14 EP EP04786066A patent/EP1664373A4/en not_active Withdrawn
- 2004-07-14 CN CNB2004800201556A patent/CN100402421C/en not_active Expired - Fee Related
-
2006
- 2006-01-12 IL IL173100A patent/IL173100A/en not_active IP Right Cessation
- 2006-01-12 IL IL173101A patent/IL173101A/en active IP Right Grant
- 2006-01-12 IL IL173102A patent/IL173102A0/en active IP Right Grant
- 2006-01-31 ZA ZA200600885A patent/ZA200600885B/en unknown
- 2006-01-31 ZA ZA200600884A patent/ZA200600884B/en unknown
- 2006-01-31 ZA ZA200600883A patent/ZA200600883B/en unknown
- 2006-04-11 US US11/401,288 patent/US7309477B2/en active Active
- 2006-11-21 US US11/602,403 patent/US7713507B2/en active Active
- 2006-12-28 HK HK06114208A patent/HK1093334A1/en not_active IP Right Cessation
-
2007
- 2007-01-17 HK HK07100572.9A patent/HK1095611A1/en unknown
- 2007-05-22 US US11/802,425 patent/US20070290408A1/en not_active Abandoned
- 2007-08-31 HK HK07109472.1A patent/HK1101705A1/en not_active IP Right Cessation
- 2007-11-07 US US11/979,699 patent/US7754180B2/en active Active
-
2010
- 2010-07-18 IL IL207054A patent/IL207054A/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3913280A (en) | 1971-01-29 | 1975-10-21 | Megadiamond Corp | Polycrystalline diamond composites |
US3745623A (en) | 1971-12-27 | 1973-07-17 | Gen Electric | Diamond tools for machining |
Non-Patent Citations (3)
Title |
---|
B. V. SPITSYN ET AL.: "Vapor Growth of Diamond on Diamond and Other Surfaces", JOURNAL OF CRYSTAL GROWTH, vol. 52, pages 219 - 226, XP024450971, DOI: doi:10.1016/0022-0248(81)90197-4 |
KAMO ET AL.: "Diamond Synthesis from Gas Phase in Microwave Plasma", JOURNAL OF CRYSTAL GROWTH, vol. 62, pages 642 - 644, XP024437837, DOI: doi:10.1016/0022-0248(83)90411-6 |
See also references of EP1664394A4 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8110041B2 (en) | 2002-09-06 | 2012-02-07 | Daniel James Twitchen | Coloured diamond |
EP1807346A2 (en) * | 2004-09-10 | 2007-07-18 | Carnegie Institution Of Washington | Ultratouch cvd single crystal diamond and three dimensional growth thereof |
EP1807346A4 (en) * | 2004-09-10 | 2010-04-28 | Carnegie Inst Of Washington | Ultratouch cvd single crystal diamond and three dimensional growth thereof |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7754180B2 (en) | Ultrahard diamonds and method of making thereof | |
US7594968B2 (en) | Ultratough CVD single crystal diamond and three dimensional growth thereof | |
US9023307B2 (en) | Production of large, high purity single crystal CVD diamond |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480020156.0 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
ENP | Entry into the national phase |
Ref document number: 2532362 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006520304 Country of ref document: JP Ref document number: 1020067000915 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 218/KOLNP/2006 Country of ref document: IN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006/00885 Country of ref document: ZA Ref document number: 200600885 Country of ref document: ZA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004258192 Country of ref document: AU |
|
REEP | Request for entry into the european phase |
Ref document number: 2004786065 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004786065 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006104551 Country of ref document: RU |
|
ENP | Entry into the national phase |
Ref document number: 2004258192 Country of ref document: AU Date of ref document: 20040714 Kind code of ref document: A |
|
WWP | Wipo information: published in national office |
Ref document number: 2004258192 Country of ref document: AU |
|
WWP | Wipo information: published in national office |
Ref document number: 2004786065 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: PI0412536 Country of ref document: BR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067000915 Country of ref document: KR |