WO2004112077A3 - Rf current return path for a large area substrate plasma reactor - Google Patents

Rf current return path for a large area substrate plasma reactor Download PDF

Info

Publication number
WO2004112077A3
WO2004112077A3 PCT/US2004/017387 US2004017387W WO2004112077A3 WO 2004112077 A3 WO2004112077 A3 WO 2004112077A3 US 2004017387 W US2004017387 W US 2004017387W WO 2004112077 A3 WO2004112077 A3 WO 2004112077A3
Authority
WO
WIPO (PCT)
Prior art keywords
large area
return path
plasma reactor
area substrate
current return
Prior art date
Application number
PCT/US2004/017387
Other languages
French (fr)
Other versions
WO2004112077A2 (en
Inventor
Wendell Blonigan
Ernst Keller
Carl Sorensen
Original Assignee
Applied Materials Inc
Wendell Blonigan
Ernst Keller
Carl Sorensen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Wendell Blonigan, Ernst Keller, Carl Sorensen filed Critical Applied Materials Inc
Priority to CN2004800213619A priority Critical patent/CN1826679B/en
Publication of WO2004112077A2 publication Critical patent/WO2004112077A2/en
Publication of WO2004112077A3 publication Critical patent/WO2004112077A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32577Electrical connecting means

Abstract

An apparatus for providing a return current path for RF current between a chamber wall and a substrate support is provided comprising a low impedance flexible curtain having a first end and a second end, the first end adapted to be electrically connected to the chamber wall and the second end adapted to be connected to the substrate support, wherein the curtain further comprises at least one fold in the curtain material, located an axial distance between the first end and the second end, and at least one perforation cut into the curtain proximate the second end.
PCT/US2004/017387 2003-06-12 2004-06-01 Rf current return path for a large area substrate plasma reactor WO2004112077A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2004800213619A CN1826679B (en) 2003-06-12 2004-06-01 RF current return path for a large area substrate plasma reactor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/460,916 2003-06-12
US10/460,916 US7083702B2 (en) 2003-06-12 2003-06-12 RF current return path for a large area substrate plasma reactor

Publications (2)

Publication Number Publication Date
WO2004112077A2 WO2004112077A2 (en) 2004-12-23
WO2004112077A3 true WO2004112077A3 (en) 2005-07-14

Family

ID=33511123

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/017387 WO2004112077A2 (en) 2003-06-12 2004-06-01 Rf current return path for a large area substrate plasma reactor

Country Status (4)

Country Link
US (2) US7083702B2 (en)
CN (1) CN1826679B (en)
TW (1) TWI313574B (en)
WO (1) WO2004112077A2 (en)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1174910A3 (en) * 2000-07-20 2010-01-06 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US7500445B2 (en) 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US20050103267A1 (en) * 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
US8033245B2 (en) * 2004-02-12 2011-10-11 Applied Materials, Inc. Substrate support bushing
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US20060005771A1 (en) * 2004-07-12 2006-01-12 Applied Materials, Inc. Apparatus and method of shaping profiles of large-area PECVD electrodes
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US20060005770A1 (en) * 2004-07-09 2006-01-12 Robin Tiner Independently moving substrate supports
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
CN101336467B (en) 2005-11-25 2010-05-26 夏普株式会社 Plasma processing apparatus and plasma processing method
US8141514B2 (en) * 2006-03-23 2012-03-27 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, and storage medium
KR101197020B1 (en) * 2006-06-09 2012-11-06 주성엔지니어링(주) Substrate processing apparatus for uniform plasma discharge and method of adjusting strength of plasma discharge
US7722778B2 (en) * 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
US8381677B2 (en) * 2006-12-20 2013-02-26 Applied Materials, Inc. Prevention of film deposition on PECVD process chamber wall
US20080160212A1 (en) * 2006-12-27 2008-07-03 Bon-Woong Koo Method and apparatuses for providing electrical contact for plasma processing applications
JP5269335B2 (en) * 2007-03-30 2013-08-21 東京エレクトロン株式会社 Plasma processing equipment
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
US20080317973A1 (en) 2007-06-22 2008-12-25 White John M Diffuser support
WO2009048920A1 (en) * 2007-10-10 2009-04-16 Shell Oil Company Systems and methods for making a middle distillate product and lower olefins from a hydrocarbon feedstock
US20090242383A1 (en) * 2008-03-31 2009-10-01 Tokyo Electron Limited Apparatus and method for rf grounding of ipvd table
FR2930561B1 (en) * 2008-04-28 2011-01-14 Altatech Semiconductor DEVICE AND METHOD FOR CHEMICAL TREATMENT IN STEAM PHASE.
US8097082B2 (en) * 2008-04-28 2012-01-17 Applied Materials, Inc. Nonplanar faceplate for a plasma processing chamber
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US20100089319A1 (en) * 2008-10-09 2010-04-15 Applied Materials, Inc. Rf return path for large plasma processing chamber
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
TWI527930B (en) * 2009-02-04 2016-04-01 應用材料股份有限公司 Ground return for plasma processes
CN102365906B (en) * 2009-02-13 2016-02-03 应用材料公司 To reflux bus for the RF bus of plasma chamber electrode and RF
US8402918B2 (en) * 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8419959B2 (en) * 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
US9039864B2 (en) * 2009-09-29 2015-05-26 Applied Materials, Inc. Off-center ground return for RF-powered showerhead
JP3160877U (en) * 2009-10-13 2010-07-15 ラム リサーチ コーポレーションLam Research Corporation End-clamping and machine-fixed inner electrode of showerhead electrode assembly
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US9220162B2 (en) * 2011-03-09 2015-12-22 Samsung Electronics Co., Ltd. Plasma generating apparatus and plasma generating method
WO2012134605A1 (en) * 2011-03-25 2012-10-04 Applied Materials, Inc. Method and apparatus for thermocouple installation or replacement in a substrate support
CN102810770B (en) * 2011-05-31 2015-03-04 中微半导体设备(上海)有限公司 Grounding device for realizing electric connection between plasma etching cavity and cathode
US8777685B2 (en) * 2011-08-15 2014-07-15 Shenzhen China Optoelectronics Technology Co., Ltd. Apparatus and method for assembling backlight module
US9953825B2 (en) 2011-11-24 2018-04-24 Lam Research Corporation Symmetric RF return path liner
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9230779B2 (en) * 2012-03-19 2016-01-05 Lam Research Corporation Methods and apparatus for correcting for non-uniformity in a plasma processing system
US9340866B2 (en) * 2012-03-30 2016-05-17 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9404176B2 (en) * 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9478447B2 (en) * 2012-11-26 2016-10-25 Applied Materials, Inc. Substrate support with wire mesh plasma containment
US9337000B2 (en) 2013-10-01 2016-05-10 Lam Research Corporation Control of impedance of RF return path
US9401264B2 (en) 2013-10-01 2016-07-26 Lam Research Corporation Control of impedance of RF delivery path
TWI473903B (en) * 2013-02-23 2015-02-21 Hermes Epitek Corp Gas Injector and Cover Plate Assembly for Semiconductor Equipment
US10593521B2 (en) * 2013-03-12 2020-03-17 Applied Materials, Inc. Substrate support for plasma etch operations
KR20150022163A (en) * 2013-08-22 2015-03-04 삼성디스플레이 주식회사 Strap for plasma processing apparatus and plasma processing apparatus having the same
JP6401638B2 (en) * 2015-03-17 2018-10-10 株式会社Kelk Heating device
KR102099382B1 (en) * 2015-10-07 2020-04-13 주식회사 원익아이피에스 Substrate processing apparatus
KR102433305B1 (en) * 2016-06-03 2022-08-17 주성엔지니어링(주) Substrate processing apparatus
US11367591B2 (en) * 2016-12-06 2022-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Composite plasma modulator for plasma chamber
KR102399343B1 (en) * 2017-05-29 2022-05-19 삼성디스플레이 주식회사 Chemical vapor deposition device
CN110730829A (en) * 2017-06-01 2020-01-24 应用材料公司 Prolonging service life of grounding belt in PECVD process chamber
KR20210148406A (en) * 2019-04-29 2021-12-07 어플라이드 머티어리얼스, 인코포레이티드 Ground Strap Assemblies
KR102640172B1 (en) 2019-07-03 2024-02-23 삼성전자주식회사 Processing apparatus for a substrate and method of driving the same
CN112447475B (en) * 2019-09-05 2023-09-29 中微半导体设备(上海)股份有限公司 Plasma processing device with flexible dielectric sheet
WO2022211816A1 (en) * 2021-04-01 2022-10-06 Applied Materials, Inc. Ground return for thin film formation using plasma

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1030345A2 (en) * 1998-11-30 2000-08-23 Alps Electric Co., Ltd. Plasma treatment equipment and impedance measurement tool
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US20030029564A1 (en) * 2001-08-09 2003-02-13 Karl Brown Pedestal with integral shield
US20030047281A1 (en) * 2000-05-30 2003-03-13 Jun Hirose Gas introduction system for temperature adjustment of object to be processed
US20030079691A1 (en) * 2000-07-20 2003-05-01 Applied Materials, Inc. Method and apparatus for dechucking a substrate

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100276093B1 (en) * 1992-10-19 2000-12-15 히가시 데쓰로 Plasma etching system
US5773162A (en) * 1993-10-12 1998-06-30 California Institute Of Technology Direct methanol feed fuel cell and system
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5900062A (en) * 1995-12-28 1999-05-04 Applied Materials, Inc. Lift pin for dechucking substrates
US6012600A (en) * 1996-02-02 2000-01-11 Applied Materials, Inc. Pressure responsive clamp for a processing chamber
US6345589B1 (en) * 1996-03-29 2002-02-12 Applied Materials, Inc. Method and apparatus for forming a borophosphosilicate film
US6254746B1 (en) * 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
US6057235A (en) * 1997-09-15 2000-05-02 Micron Technology, Inc. Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
EP1073779A4 (en) * 1998-04-13 2007-05-30 Tokyo Electron Ltd Reduced impedance chamber
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6227237B1 (en) * 1999-05-07 2001-05-08 Norco Industries, Co. Hose storage and drainage apparatus
US6531030B1 (en) * 2000-03-31 2003-03-11 Lam Research Corp. Inductively coupled plasma etching apparatus
US6779481B2 (en) * 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
US6364958B1 (en) * 2000-05-24 2002-04-02 Applied Materials, Inc. Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
US6506291B2 (en) * 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
DE10138860A1 (en) 2001-08-08 2003-02-27 Voith Paper Patent Gmbh Process for guiding the suspension in a paper pulper as well as pulp solver for carrying out the process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
EP1030345A2 (en) * 1998-11-30 2000-08-23 Alps Electric Co., Ltd. Plasma treatment equipment and impedance measurement tool
US20030047281A1 (en) * 2000-05-30 2003-03-13 Jun Hirose Gas introduction system for temperature adjustment of object to be processed
US20030079691A1 (en) * 2000-07-20 2003-05-01 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US20030029564A1 (en) * 2001-08-09 2003-02-13 Karl Brown Pedestal with integral shield

Also Published As

Publication number Publication date
US7083702B2 (en) 2006-08-01
US8062717B2 (en) 2011-11-22
CN1826679A (en) 2006-08-30
TWI313574B (en) 2009-08-11
US20060231029A1 (en) 2006-10-19
TW200505294A (en) 2005-02-01
CN1826679B (en) 2010-05-12
US20040250955A1 (en) 2004-12-16
WO2004112077A2 (en) 2004-12-23

Similar Documents

Publication Publication Date Title
WO2004112077A3 (en) Rf current return path for a large area substrate plasma reactor
AU2001283565A1 (en) An electrode arrangement for circuit energy conditioning
AU2002245088A1 (en) Low contamination plasma chamber components and methods for making the same
AU2002210861A1 (en) An atmospheric pressure plasma assembly
AU2002214292A1 (en) Gas discharge tube
EP1119111A4 (en) Isolator with built-in power amplifier
AU2003254188A1 (en) An rf front end with reduced carrier leakage
AU2001238188A1 (en) Multi-zone rf electrode for capacitive plasma sources
EP1191648A3 (en) Gas laser with coaxial tubular electrodes
AU2001237645A1 (en) Variable gain line driver depending on frequency
AU2003300931A1 (en) Lighted cautery knife
AU2001259482A1 (en) Extreme-uv electrical discharge source
AU2001261856A1 (en) High impedance bias device
AU2001276818A1 (en) Gas discharge laser electrode with reduced sensitivity to adverse boundary layereffects
AU2001280822A1 (en) Vacuum gap dielectric field emission triode
AU5304500A (en) High impedance matched rf power transistor
AU2002223088A1 (en) Chemical plasma cathode
AU2002221135A1 (en) Indirectly heated electrode for gas discharge tube
AU2002217996A1 (en) Traveling wave tube amplifier with reduced sever related applications
AU2001277846A1 (en) Vacuum chuck with integrated electrical testing points
AU2003232997A1 (en) Rf power amplifier
AU2001274612A1 (en) Microstrip gas chamber
AU2002246656A1 (en) Comminution blade
USD542734S1 (en) Electrical transformers
AU2002214294A1 (en) Gas discharge tube

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200480021361.9

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase