WO2004044957A3 - Method and apparatus for providing and integrating a general metal delivery source (gmds) with atomic layer deposition (ald) - Google Patents

Method and apparatus for providing and integrating a general metal delivery source (gmds) with atomic layer deposition (ald) Download PDF

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Publication number
WO2004044957A3
WO2004044957A3 PCT/US2003/035768 US0335768W WO2004044957A3 WO 2004044957 A3 WO2004044957 A3 WO 2004044957A3 US 0335768 W US0335768 W US 0335768W WO 2004044957 A3 WO2004044957 A3 WO 2004044957A3
Authority
WO
WIPO (PCT)
Prior art keywords
source
gas
reaction chamber
providing
gmds
Prior art date
Application number
PCT/US2003/035768
Other languages
French (fr)
Other versions
WO2004044957A2 (en
Inventor
Ofer Sneh
Original Assignee
Genus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genus Inc filed Critical Genus Inc
Priority to EP03783276A priority Critical patent/EP1560945A2/en
Priority to AU2003290694A priority patent/AU2003290694A1/en
Priority to JP2004551983A priority patent/JP2006506811A/en
Publication of WO2004044957A2 publication Critical patent/WO2004044957A2/en
Publication of WO2004044957A3 publication Critical patent/WO2004044957A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction

Abstract

A General Metal Delivery Source (GMDS) for delivery of volatile metal compounds in gaseous form to processing apparatus has a reaction chamber holding a solid metal source material and connecting to the processing apparatus, and having an outlet for provision of the volatile metal compounds, a source heater coupled to the reaction chamber for heating said solid metal source material, a gas source for providing a reactive gas, a gas delivery conduit from the gas source to the reaction chamber for delivering gas species to the reaction chamber; and a plasma generation apparatus coupled to the gas delivery conduit. The plasma generation apparatus dissociates reactive gas molecules providing monatomic reactive species to the reaction chamber, and the monatomic reactive species combine with metal from the heated solid metal source metareial forming the volatile metal compounds.
PCT/US2003/035768 2002-11-14 2003-11-10 Method and apparatus for providing and integrating a general metal delivery source (gmds) with atomic layer deposition (ald) WO2004044957A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03783276A EP1560945A2 (en) 2002-11-14 2003-11-10 Method and apparatus for providing and integrating a general metal delivery source (gmds) with atomic layer deposition (ald)
AU2003290694A AU2003290694A1 (en) 2002-11-14 2003-11-10 Method and apparatus for providing and integrating a general metal delivery source (gmds) with atomic layer deposition (ald)
JP2004551983A JP2006506811A (en) 2002-11-14 2003-11-10 Method and apparatus for providing a universal metal delivery source (GMDS) and integrating the universal metal delivery source with atomic layer deposition (ALD)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/295,614 2002-11-14
US10/295,614 US6863021B2 (en) 2002-11-14 2002-11-14 Method and apparatus for providing and integrating a general metal delivery source (GMDS) with atomic layer deposition (ALD)

Publications (2)

Publication Number Publication Date
WO2004044957A2 WO2004044957A2 (en) 2004-05-27
WO2004044957A3 true WO2004044957A3 (en) 2004-10-07

Family

ID=32297256

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/035768 WO2004044957A2 (en) 2002-11-14 2003-11-10 Method and apparatus for providing and integrating a general metal delivery source (gmds) with atomic layer deposition (ald)

Country Status (6)

Country Link
US (2) US6863021B2 (en)
EP (1) EP1560945A2 (en)
JP (1) JP2006506811A (en)
KR (1) KR20050063807A (en)
AU (1) AU2003290694A1 (en)
WO (1) WO2004044957A2 (en)

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US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7767363B2 (en) * 2005-06-24 2010-08-03 Micron Technology, Inc. Methods for photo-processing photo-imageable material
KR101124504B1 (en) * 2005-09-22 2012-03-15 삼성전자주식회사 Fabrication method of amorphous NiO thin film by ALD process and nonvolatile memory device using the amorphous NiO thin film
US7582562B2 (en) 2005-10-06 2009-09-01 Micron Technology, Inc. Atomic layer deposition methods
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
US7968437B2 (en) 2005-11-18 2011-06-28 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing apparatus
US7442413B2 (en) * 2005-11-18 2008-10-28 Daystar Technologies, Inc. Methods and apparatus for treating a work piece with a vaporous element
WO2007106076A2 (en) * 2006-03-03 2007-09-20 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US7692222B2 (en) * 2006-11-07 2010-04-06 Raytheon Company Atomic layer deposition in the formation of gate structures for III-V semiconductor
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
CN103766001B (en) * 2011-09-09 2016-06-29 东芝三菱电机产业系统株式会社 Plasma generating device and CVD device
CN104487608A (en) 2012-05-31 2015-04-01 高级技术材料公司 Source reagent-based delivery of fluid with high material flux for batch deposition
JP2014053477A (en) * 2012-09-07 2014-03-20 Philtech Inc Solid metal gas supply device
KR101541361B1 (en) 2013-07-15 2015-08-03 광주과학기술원 Fluidized bed ald appratus for nano-coated particle
WO2016046909A1 (en) * 2014-09-24 2016-03-31 株式会社日立国際電気 Method for manufacturing semiconductor device, substrate processing apparatus, semiconductor device and program
US9972501B1 (en) 2017-03-14 2018-05-15 Nano-Master, Inc. Techniques and systems for continuous-flow plasma enhanced atomic layer deposition (PEALD)
JP7298979B2 (en) * 2017-10-12 2023-06-27 ジェレスト， インコーポレイテッド Methods and systems for integrated synthesis, delivery and processing of chemical sources for thin film manufacturing
US11087959B2 (en) 2020-01-09 2021-08-10 Nano-Master, Inc. Techniques for a hybrid design for efficient and economical plasma enhanced atomic layer deposition (PEALD) and plasma enhanced chemical vapor deposition (PECVD)
US11640900B2 (en) 2020-02-12 2023-05-02 Nano-Master, Inc. Electron cyclotron rotation (ECR)-enhanced hollow cathode plasma source (HCPS)

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US3614658A (en) * 1969-01-22 1971-10-19 Spectra Physics Gas laser having means for maintaining a uniform gas mixture in a dc discharge
US6007671A (en) * 1992-10-28 1999-12-28 Fujitsu Limited Method for hydrogen plasma down-flow processing and apparatus thereof
US6071572A (en) * 1996-10-15 2000-06-06 Applied Materials, Inc. Forming tin thin films using remote activated specie generation
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
US6225745B1 (en) * 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber

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US4699082A (en) * 1983-02-25 1987-10-13 Liburdi Engineering Limited Apparatus for chemical vapor deposition
US4945857A (en) * 1986-03-14 1990-08-07 International Business Machines Corporation Plasma formation of hydride compounds
US4971832A (en) * 1988-03-02 1990-11-20 Canon Kabushiki Kaisha HR-CVD process for the formation of a functional deposited film on a substrate with application of a voltage in the range of -5 to -100 V
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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US3614658A (en) * 1969-01-22 1971-10-19 Spectra Physics Gas laser having means for maintaining a uniform gas mixture in a dc discharge
US6007671A (en) * 1992-10-28 1999-12-28 Fujitsu Limited Method for hydrogen plasma down-flow processing and apparatus thereof
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
US6071572A (en) * 1996-10-15 2000-06-06 Applied Materials, Inc. Forming tin thin films using remote activated specie generation
US6225745B1 (en) * 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber

Non-Patent Citations (1)

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Title
HASSANZADEH P.& ANDREWS L.: "Infrared spectra of germanium sulfide, germanium disulfide, germanium oxide sulfide and germanium dioxide in solid argon", JOURNAL OF PHYSICAL CHEMISTRY, vol. 96, 1992, pages 6181 - 6185, XP002981255 *

Also Published As

Publication number Publication date
US20040094093A1 (en) 2004-05-20
AU2003290694A8 (en) 2004-06-03
WO2004044957A2 (en) 2004-05-27
KR20050063807A (en) 2005-06-28
US20050103269A1 (en) 2005-05-19
EP1560945A2 (en) 2005-08-10
US6863021B2 (en) 2005-03-08
JP2006506811A (en) 2006-02-23
AU2003290694A1 (en) 2004-06-03

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