WO2004044275A3 - Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus - Google Patents
Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus Download PDFInfo
- Publication number
- WO2004044275A3 WO2004044275A3 PCT/US2003/035798 US0335798W WO2004044275A3 WO 2004044275 A3 WO2004044275 A3 WO 2004044275A3 US 0335798 W US0335798 W US 0335798W WO 2004044275 A3 WO2004044275 A3 WO 2004044275A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystal pulling
- pulling apparatus
- single crystal
- silicon carbide
- structural component
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
Abstract
A process for reconditioning a structural component of a crystal pulling apparatus for reuse therein. The structural component comprises a graphite substrate and a first protect layer of silicon carbide or glassy carbon the substrate, and optionally, a second protective layer comprising silicon covering the first protective layer. During the process, the structural component, while in a treatment chamber, is exposed to an iron-complexing gas comprising a halogen at a temperature and for a duration sufficient to reduce an iron concentration in the structural component.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42554702P | 2002-11-12 | 2002-11-12 | |
US60/425,547 | 2002-11-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004044275A2 WO2004044275A2 (en) | 2004-05-27 |
WO2004044275A3 true WO2004044275A3 (en) | 2004-08-05 |
Family
ID=32313012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/035798 WO2004044275A2 (en) | 2002-11-12 | 2003-11-12 | Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2004044275A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL128286A (en) | 1999-01-29 | 2004-01-04 | Sightline Techn Ltd | Propulsion of a probe in the colon using a flexible sleeve |
US10184193B2 (en) | 2015-05-18 | 2019-01-22 | Globalwafers Co., Ltd. | Epitaxy reactor and susceptor system for improved epitaxial wafer flatness |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4259278A (en) * | 1979-07-09 | 1981-03-31 | Ultra Carbon Corporation | Method of reshaping warped graphite enclosures and the like |
US4725423A (en) * | 1985-03-13 | 1988-02-16 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the regeneration of shaped carbon bodies |
JPH05294789A (en) * | 1992-04-20 | 1993-11-09 | Toshiba Corp | Method for pulling up silicon crystal |
JPH07257987A (en) * | 1994-03-16 | 1995-10-09 | Sumitomo Sitix Corp | Graphite member for semiconductor single crystal pulling up device and semiconductor single crystal pulling up device |
US5683281A (en) * | 1995-02-27 | 1997-11-04 | Hitco Technologies, Inc | High purity composite useful as furnace components |
US5858486A (en) * | 1995-02-27 | 1999-01-12 | Sgl Carbon Composites, Inc. | High purity carbon/carbon composite useful as a crucible susceptor |
-
2003
- 2003-11-12 WO PCT/US2003/035798 patent/WO2004044275A2/en not_active Application Discontinuation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4259278A (en) * | 1979-07-09 | 1981-03-31 | Ultra Carbon Corporation | Method of reshaping warped graphite enclosures and the like |
US4725423A (en) * | 1985-03-13 | 1988-02-16 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for the regeneration of shaped carbon bodies |
JPH05294789A (en) * | 1992-04-20 | 1993-11-09 | Toshiba Corp | Method for pulling up silicon crystal |
JPH07257987A (en) * | 1994-03-16 | 1995-10-09 | Sumitomo Sitix Corp | Graphite member for semiconductor single crystal pulling up device and semiconductor single crystal pulling up device |
US5683281A (en) * | 1995-02-27 | 1997-11-04 | Hitco Technologies, Inc | High purity composite useful as furnace components |
US5800924A (en) * | 1995-02-27 | 1998-09-01 | Sgl Carbon Composites, Inc. | High purity composite useful as furnace components |
US5858486A (en) * | 1995-02-27 | 1999-01-12 | Sgl Carbon Composites, Inc. | High purity carbon/carbon composite useful as a crucible susceptor |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 018, no. 093 (C - 1166) 16 February 1994 (1994-02-16) * |
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 02 29 February 1996 (1996-02-29) * |
Also Published As
Publication number | Publication date |
---|---|
WO2004044275A2 (en) | 2004-05-27 |
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