WO2004039731A3 - Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys - Google Patents

Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys Download PDF

Info

Publication number
WO2004039731A3
WO2004039731A3 PCT/US2002/034861 US0234861W WO2004039731A3 WO 2004039731 A3 WO2004039731 A3 WO 2004039731A3 US 0234861 W US0234861 W US 0234861W WO 2004039731 A3 WO2004039731 A3 WO 2004039731A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase
separation during
alloys
iii
reaction chamber
Prior art date
Application number
PCT/US2002/034861
Other languages
French (fr)
Other versions
WO2004039731A2 (en
Inventor
Andrew G Norman
Jerry M Olson
Original Assignee
Midwest Research Inst
Andrew G Norman
Jerry M Olson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midwest Research Inst, Andrew G Norman, Jerry M Olson filed Critical Midwest Research Inst
Priority to PCT/US2002/034861 priority Critical patent/WO2004039731A2/en
Priority to AU2002368226A priority patent/AU2002368226A1/en
Priority to US10/532,540 priority patent/US7229498B2/en
Publication of WO2004039731A2 publication Critical patent/WO2004039731A2/en
Publication of WO2004039731A3 publication Critical patent/WO2004039731A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.
PCT/US2002/034861 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys WO2004039731A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/US2002/034861 WO2004039731A2 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys
AU2002368226A AU2002368226A1 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys
US10/532,540 US7229498B2 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/034861 WO2004039731A2 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys

Publications (2)

Publication Number Publication Date
WO2004039731A2 WO2004039731A2 (en) 2004-05-13
WO2004039731A3 true WO2004039731A3 (en) 2004-06-24

Family

ID=32295745

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/034861 WO2004039731A2 (en) 2002-10-29 2002-10-29 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys

Country Status (2)

Country Link
AU (1) AU2002368226A1 (en)
WO (1) WO2004039731A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4438049B2 (en) * 2003-08-11 2010-03-24 キヤノン株式会社 Field effect transistor, sensor using the same, and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5585640A (en) * 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
US5804475A (en) * 1994-11-14 1998-09-08 The United States Of America As Represented By The Secretary Of The Navy Method of forming an interband lateral resonant tunneling transistor
US5830538A (en) * 1993-12-23 1998-11-03 International Business Machines Corporation Method to form a polycrystalline film on a substrate
US20020079485A1 (en) * 2000-09-22 2002-06-27 Andreas Stintz Quantum dash device
US20020126536A1 (en) * 1997-07-29 2002-09-12 Micron Technology, Inc. Deaprom and transistor with gallium nitride or gallium aluminum nitride gate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5830538A (en) * 1993-12-23 1998-11-03 International Business Machines Corporation Method to form a polycrystalline film on a substrate
US5804475A (en) * 1994-11-14 1998-09-08 The United States Of America As Represented By The Secretary Of The Navy Method of forming an interband lateral resonant tunneling transistor
US5585640A (en) * 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
US20020126536A1 (en) * 1997-07-29 2002-09-12 Micron Technology, Inc. Deaprom and transistor with gallium nitride or gallium aluminum nitride gate
US20020079485A1 (en) * 2000-09-22 2002-06-27 Andreas Stintz Quantum dash device

Also Published As

Publication number Publication date
AU2002368226A8 (en) 2004-05-25
WO2004039731A2 (en) 2004-05-13
AU2002368226A1 (en) 2004-05-25

Similar Documents

Publication Publication Date Title
EP1423259A4 (en) Free-standing (al, ga, in)n and parting method for forming same
WO2005022120A3 (en) Process for producing nanocrystals and nanocrystals produced thereby
EP1375431A3 (en) Method of manufacturing inorganic nanotube
WO2004090201A3 (en) Method for the production of monocrystalline crystals
EP1088913A3 (en) Liquid-phase growth method, liquid-phase growth apparatus, and solar cell
EP0851513A3 (en) Method of producing semiconductor member and method of producing solar cell
WO2002043124A3 (en) Method for making a substrate in particular for optics, electronics or optoelectronics and resulting substrate
JP2005298319A5 (en)
WO2006127157A3 (en) Method of transferring a thin crystalline semiconductor layer
WO2007018555A3 (en) Ultratough cvd single crystal diamond and three dimensional growth thereof
WO2006107422A3 (en) Method of making a substrate structure with enhanced surface area
EP1479795A4 (en) Process for producing group iii nitride compound semiconductor
TW200721373A (en) Method for recycling an epitaxied donor wafer
WO2004000003A3 (en) Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process
WO2006016914A3 (en) Methods for nanowire growth
WO2009005825A8 (en) Methods for fabricating thin film iii-v compound solar cell
EP1006567A3 (en) Method of manufacturing semiconductor wafer method of using and utilizing the same
WO2005101465A3 (en) Method and system for lattice space engineering
GB0326321D0 (en) Formation of lattice-tuning semiconductor substrates
TW200503076A (en) III-V compound semiconductor crystal and method for production thereof
WO2009066286A3 (en) Amorphous group iii-v semiconductor material and preparation thereof
WO2009007907A3 (en) Single crystal growth on a mis-matched substrate
WO2006132381A3 (en) Functional film containing structure and method of manufacturing functional film
JP2006524138A5 (en)
WO2004027858A8 (en) Formation of a relaxed useful layer from a wafer with no buffer layer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
ENP Entry into the national phase

Ref document number: 2006021564

Country of ref document: US

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 10532540

Country of ref document: US

122 Ep: pct application non-entry in european phase
WWP Wipo information: published in national office

Ref document number: 10532540

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP