WO2004038916A2 - Micro-electromechanical varactor with enhanced tuning range - Google Patents
Micro-electromechanical varactor with enhanced tuning range Download PDFInfo
- Publication number
- WO2004038916A2 WO2004038916A2 PCT/EP2003/012399 EP0312399W WO2004038916A2 WO 2004038916 A2 WO2004038916 A2 WO 2004038916A2 EP 0312399 W EP0312399 W EP 0312399W WO 2004038916 A2 WO2004038916 A2 WO 2004038916A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- movable beam
- electrodes
- varactor
- mem
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
- H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/01—Details
- H01G5/011—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/924—Active solid-state devices, e.g. transistors, solid-state diodes with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap
Definitions
- This invention is generally related to micro-electromechanical (MEM) switches and to a method of fabricating such structures, and more specifically, to a MEM variable capacitor that uses three-dimensional comb-drive electrodes (fins) by bonding a chip to a carrier substrate .
- MEM micro-electromechanical
- Variable capacitors or varactors are a fundamental part of high-frequency and radio- frequency (RF) circuits. MEM variable capacitors have drawn considerable interest over the last few years due to their superior electrical characteristics. Variable capacitors using MEM technology can be easily implemented in standard semiconductor devices for applications in aerospace, consumer electronics and communications systems.
- a MEM variable capacitor device that utilized comb-drive electrodes (or fins) for actuation, while the control or signal electrodes sense the motion of the movable beam, leading to a change in capacitance. It is another object to provide a MEM varactor device where the switch contacts are separated by a dielectric to provide electrical isolation between the control signal and the switching signal. i It is further an object to provide a MEM varactor device with comb-drive actuation for obtaining large capacitance ratio or tuning range.
- MEMS based variable capacitors provide many advantages over conventional solid- state varactors. These devices are operated at higher quality factors leading to low loss during operation. Two types of MEMS varactors are described herein: parallel plate and comb-drive varactors. Most widely
- the movable electrode are linear in nature (directly proportional to the distance) which greatly enhances the tuning range.
- comb-drive electrodes are difficult to process and the change in capacitance obtained is very small
- the MEM switch described includes both of the approaches (parallel plate and comb-drive) that were thus far considered. Greater area is made available during tuning by using a parallel plate type model while incorporating the linear electrostatic forces from
- the movable and fixed electrodes are processed separately on chip and carrier wafers .
- the chip side contains the fixed- fixed movable beam.
- the beam is fabricated with metal "fins" acting as comb electrodes.
- the carrier side has an actuator (DC electrodes) along the side
- the RF (signal) electrodes are positioned between the electrodes.
- the actuator electrodes are connected by way of "through vias" for electrical connection.
- the chip side is flipped onto the carrier wafer and precision aligned so as to make electrical connection.
- the height of the stud on the carrier side determines the air gap between the movable electrode and the fixed electrode.
- a semiconductor micro electro- mechanical (MEM) varactor that includes a first substrate having a movable beam anchored at
- the movable beam (0 least at one end of the movable beam to the first substrate, the movable beam having discrete fins protruding therefrom in a direction opposite to the first substrate; and a second substrate coupled to the first substrate having fixed electrodes, each of the fixed electrodes respectively facing 55 one of the discrete fins, the discrete fins being activated by a voltage between the protruding fins and the fixed electrodes .
- Fig. 1 is a cross-section view of the functional MEM ) varactor device according to the invention, seen at a cut through the lines A-A shown in Fig. 2.
- Fig. 2 is a top-down view of the movable part (top, chip side) of the device shown in Fig. 1, according to the present invention.
- Fig. 3 is a top-down view of the fixed part (bottom, carrier side) of the device shown in Fig. 1, according to the present invention.
- Fig. 3A is a perspective view of the MEM switch, according to the invention.
- 0 Fig. 4 shows a top-down view of the movable part (top, chip side) of the device with a maze type configuration of the comb-drive electrodes, shown in Fig. 1 according to the present invention.
- Fig. 5 shows a top-down view of the fixed part (bottom, 5 carrier side) of the device with a maze type configuration for the bottom electrodes, reflecting the Fig. 4 according to the present invention.
- Fig. 6 shows a top-down view of the movable part (top, chip side) of the device with a another configuration of the ⁇ 0 comb-drive electrodes, shown in Fig. 1, according to the present invention.
- Fig. 7 shows a top-down view of the fixed part (bottom, carrier side) of the device with another configuration for the bottom electrodes, reflecting the Fig. 6 according to the 15 present invention.
- Fig. 8 illustrates another configuration of the MEM varactor device, packaged using the solder bumps for electrical feed through.
- Figs. 9 through 21 show the process sequence used for the > fabrication of the top chip side of the MEM varactor device, in accordance with the invention.
- Figs. 22 through 39 show the process sequence used for fabricating the bottom carrier side of the MEM varactor device, according to the invention.
- Fig. 1 shows a cross-section of three dimensional MEM
- the comb-drive structure consists of the combination of protrusions 50 and 50A.
- the movable electrode substrate 10 will be referred to as the "chip side" while the fixed electrode substrate 11 will be
- carrier side Metal connections (not shown) to the electrodes are inserted within dielectric 20A, as it is typically done in the semiconductor fabrication process commonly known as Damascene process. In the preferred embodiment, the metal connections and electrodes are,
- Metal conductors 51, 51A and 51B are approximately 1000 A thick.
- Conductor 51A is illustrative of a signal electrode wherein the gap distance between electrodes 51A and
- the area of comb drive fins 50A varies significantly, and is typically of the order of 10 ⁇ m 2 .
- the length of movable beam 50 (Fig. 1) is also variable, ranging from 20 ⁇ m to over 200 ⁇ m.
- the driving electrodes 51B (Figs. 1 and 3) stabilize the motion of the combs 50A to force them to maintain a perfectly linear and vertical motion to provide the necessary actuation.
- the attractive force between driving electrodes 51B and combs 50A depends on the overlapping areas of the comb-drive lateral surfaces.
- the area of electrode 50A ranges from 0.5 to 10 ⁇ m 2 , although its dimensions may vary by making it deeper or longer in order to maximize the area of electrode 50A.
- the height of electrode 51B determines the gap distance between the movable beam 50 and fixed electrodes 51.
- trench gap 31 provides the necessary space for the electrodes to move up and down when a voltage is applied between electrode 50A (Fig. 1) and stationary electrode 51B (Fig. 1) .
- electrodes 50A are attracted towards electrodes 51.
- the movable beam 50 is suspended from and loosely attached by a double hinged or fixed- fixed support.
- the moveable beam is anchored on either side to the dielectric 20A.
- the attraction between the comb drive electrodes 50A and 51B causes beam 50 to move along the direction of the comb-drive electrodes 51B.
- Control electrodes 51A are separated from the movable beam 50 by an insulating or semi -insulating dielectric material 21B (Fig.30) .
- Electrodes 51 can be exposed to the trench on one side or set in such a way that a thin layer of dielectric prevents physical contact between the electrodes 50A and 51.
- a thin layer of dielectric of the order of 200 - 500 A precludes them from touching each other If contact is made, a delta in potential is lost and the drive voltage may fluctuate.
- the mc eable beam 50 can be isolated by depositing a thin layer of dielectric on its sides.
- the comb-drive electrodes are 50A.
- the movable electrode is built within the substrate or on a dielectric layer deposited en top of the substrate F g. 2 illustrates, the case where movable electrode 50 is connected to the dielectric on both sides using a double -hinged flexure supports .
- the movable electrode can be supported by variety of flexure supports providing di f rent spring constant to the beam. Such flexure, supports can be single: hinged, serpentine, crab-leg, fixed-fixed supports.
- Metal electrodes 50A and 50 can be of different or same material, latter is preferable for better electrical connectivity.
- a cavity _' 0 is formed in the dielectric or substrate, beneath the mov?.b3 ⁇ beam 50 allowing the structure to move freely.
- the corres onding electrode 50 is formed within the dielectric and over the cavity 30 which is filled with sacrificial material using in conventional semiconductor fabrication techniques such as damascene approach.
- the electrodes 5CA can be for sd over the electrode 50 using through plating approach. Whan a voltage differential is applied to the electrodes 50 and 51B, an electrostatic force attracts r.'.o ,r -able electrode 50 towards stationary electrode SIR. causing electrode 50 to deflect or move towards the stationary electrode. Wh ⁇ n the electrode deforms, the signal electrode ( ⁇ 5.1A record th.-..
- Fig. 3 is a top-down view of the carrier side substrate illustrating the driving electrodes 5XB, signal electrodes 5.1A and trench gap 31 embodied in insuiar i ⁇ material 21 over substrate 11 (Fig.l).
- Fig. 2 shows the one particular combination of the comb-drive electrodes
- a maze type configuration shown in Fig 4 and pin configuration in Fig. 6 can be used.
- a maze type configuration (Fig. 4) is expected to minimize the lateral pull-down effect of the comb-drive electrodes due to increases stiffness of the electrodes.
- Other configurations for comb-drive electrodes 50A are also possible.
- Figs. 3, 5 and 7 show the corresponding bottom electrode configurations for Figs. 2, 4 and 6 respectively.
- Fig. 3 illustrates the concept where in signal electrodes, 51A are in between the cavity areas and along the sidewalls of the cavities comb-drive electrodes 51A are formed.
- Fig. 8 illustrates another configuration of the MEM varactor device, packaged using the solder bumps 51C for electrical feed through.
- the carrier substrate is attached to a temporary substrate (not shown) and the bottom substrate 11 is polished or ground to open the electrodes.
- conventional semiconductor bumping process can be used to make direct electrical connection to the bottom electrodes using solder bumps.
- the temporary substrate 11A (not shown) is then removed. Typical height of the solder bumps are of the order of 0.1 to 1 mm.
- the carrier substrate can be diced and individual components are attached to an organic or ceramic substrate 12 for electrical connections. Using this approach wafer level alignment and bonding of the "chip side" of the device can be done to carrier side of the device providing the advantages of improved yield and lower cost of manufacturing.
- Figs. 9 through 21 show the process sequence which can be used for fabrication of the top chip- side of the MEM varactor device using the present invention and Figs. 22 through 39 show the process sequence which can be used for fabrication of the bottom carrier-side of the MEM varactor device. Step-step process sequence is described briefly below:
- Fig. 9 shows the first step of the fabrication process wherein insulating or semi- insulating material 20 is deposited on top of the chip-side substrate 10.
- the thickness of the material 20 is to match the height of a cavity intended to be formed beneath the movable electrode and allowing free motion of the structure.
- Fig. 10 shows the cavity 30 formed in material 20 formed over the chip-side substrate 10 using conventional semiconductor lithography and patterning techniques.
- sacrificial material or polymer 40 is deposited to fill the cavity formed in the previous step.
- Fig. 12 illustrates the step of planarizing sacrificial material 40.
- An insulating or semi-insulating material 20A is then deposited over material 40 (Fig 13) .
- the insulating material 20A is then patterned and etched to form an opening for the formation of the movable electrode and associated connections 30.
- Seed layer 50C is then deposited for further processing (Fig. 14) .
- conductive material 50 is deposited over the substrate using plating or other similar techniques .
- the thickness of the metal deposited should be at least equal to the thickness of the movable electrode.
- metal 50 is planarized to form the electrodes over the substrate.
- Seed metal 50B e.g., chrome-copper
- Resist or polymeric material 60 is then deposited and patterned to form a plurality of openings for the selective plating process (Fig. 18).
- comb-drive electrodes are plated through the resist or polymeric material.
- the polymeric material/resist 60 is then removed or stripped from substrate 10 to be followed by seed metal 50B being etched or removed (Fig 20) .
- Fig. 21 shows the final processing step of the chip-side wherein sacrificial material 40 underneath the movable electrode 50 is etched or removed to form a free standing movable beam. The structure can then be flipped over onto the carrier side as shown in Fig. 1.
- Fig. 22 illustrates the first step for processing the carrier-side ('bottom half) of the MEM varactor device.
- Substrate 11 is patterned and etched to fabricate a plurality of deep vias 31 to form the bottom electrodes.
- Insulating material or dielectric 21 is then conformally deposited over the vias (Fig. 23) .
- Conductive material 51 preferably metal, is then embedded within the vias and planarized to form the bottom electrodes, as it is commonly done in a Damascene process (Fig. 24) .
- Dielectric or insulating material 21A is deposited over the bottom electrodes (Fig.
- Dielectric material 21A is then patterned and etched to form openings 31A over the bottom electrodes (Fig. 26).
- Conductive material or metal 51F is then deposited over the patterned dielectric (Fig. 27).
- Resist or polymeric material 41 is blanket deposited over the structure and patterned to expose portions of the metal 51F (Fig. 28) .
- the exposed metal is etched except in the areas where the resist/polymer covers the metal, forming the drive electrodes 51B and signal electrodes 51A.
- the resist or polymeric material is then removed.
- Insulating material 2 IB is deposited over the openings to cover the electrodes 51A and 51B (Fig. 30) .
- Resist or polymer material is then patterned and the dielectric material 21B is etched at the bottom of the openings (Fig. 31) .
- Resist or polymer 41A is again blanket deposited and patterned to selectively open the regions at the interconnections or contact pads 51 on either side of the device (Fig. 32) .
- seed metal 51E e.g., chrome-copper, is deposited over polymer 41A (Fig.
- the thickness of the polymer 41A is a critical parameter since it determines the height of the raised contact electrodes and the initial gap distance between top and bottom electrodes.
- Fig. 34 shows the step wherein metal 51D (of the same material as 51) is deposited over the contact pads and is planarized.
- Fig. 35 shows the final processing step for the carrier-side substrate, wherein the resist or polymeric material 41A is removed or stripped to expose raised contact pads 51D.
- vacuum lamination of the final device can be done using polymer resulting in good polymer encapsulation of the device.
- the MEMS varactor device can also interconnected using an alternate fabrication method.
- the carrier substrate with the raised contact pads (Fig. 34) is formed, polymeric material is left on top of the substrate and another temporary substrate 11A is attached to the top of the polymer (Fig. 36) .
- Substrate 11 is then polished or ground to open the bottom of the electrodes for the interconnections (Fig. 37).
- Solder bumps of material 51C are attached to the bottom of the substrate using conventional bumping fabrication methods (Fig. 38). Typical material used for solder bumping is lead-tin, tin-silver. Insulating or semi- insulating polymeric material is deposited at the bottom of substrate 11 to ensure mechanical stability.
- Fig. 39 shows the last processing step for the carrier-side of the device with solder bump interconnections.
- glass substrate 11A and polymeric material 41A are removed to expose raised contact pads 51D.
- the substrate can then be diced and attached to another organic or ceramic substrate 12 to provide the interconnections.
- Individual 'chip-side' devices can then be flipped over and bonded to the carrier substrate to form the final device as shown in Fig. 8.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03769489A EP1556949A2 (en) | 2002-10-22 | 2003-09-18 | Micro-electromechanical varactor with enhanced tuning range |
JP2004546027A JP4732754B2 (en) | 2002-10-22 | 2003-09-18 | Electromechanical micro variable capacitance diode with extended tuning range |
AU2003278176A AU2003278176A1 (en) | 2002-10-22 | 2003-09-18 | Micro-electromechanical varactor with enhanced tuning range |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/278,211 | 2002-10-22 | ||
US10/278,211 US6661069B1 (en) | 2002-10-22 | 2002-10-22 | Micro-electromechanical varactor with enhanced tuning range |
Publications (2)
Publication Number | Publication Date |
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WO2004038916A2 true WO2004038916A2 (en) | 2004-05-06 |
WO2004038916A3 WO2004038916A3 (en) | 2004-08-12 |
Family
ID=29711735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2003/012399 WO2004038916A2 (en) | 2002-10-22 | 2003-09-18 | Micro-electromechanical varactor with enhanced tuning range |
Country Status (8)
Country | Link |
---|---|
US (2) | US6661069B1 (en) |
EP (1) | EP1556949A2 (en) |
JP (1) | JP4732754B2 (en) |
KR (1) | KR100991965B1 (en) |
CN (1) | CN100487837C (en) |
AU (1) | AU2003278176A1 (en) |
TW (1) | TWI232500B (en) |
WO (1) | WO2004038916A2 (en) |
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CN100555669C (en) * | 2004-06-30 | 2009-10-28 | 国际商业机器公司 | The manufacture method of variable capacitor of micro electromechanical system |
RU169456U1 (en) * | 2016-07-06 | 2017-03-21 | Общество с ограниченной ответственностью "Базовые технологии" | Three-bit RF MEMS varactor |
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2002
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-
2003
- 2003-06-12 US US10/459,978 patent/US6696343B1/en not_active Expired - Lifetime
- 2003-07-30 TW TW092120800A patent/TWI232500B/en not_active IP Right Cessation
- 2003-09-18 KR KR1020057004845A patent/KR100991965B1/en not_active IP Right Cessation
- 2003-09-18 WO PCT/EP2003/012399 patent/WO2004038916A2/en active Search and Examination
- 2003-09-18 CN CNB038245213A patent/CN100487837C/en not_active Expired - Fee Related
- 2003-09-18 JP JP2004546027A patent/JP4732754B2/en not_active Expired - Fee Related
- 2003-09-18 AU AU2003278176A patent/AU2003278176A1/en not_active Abandoned
- 2003-09-18 EP EP03769489A patent/EP1556949A2/en not_active Withdrawn
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EP0928959A2 (en) * | 1998-01-13 | 1999-07-14 | STMicroelectronics, Inc. | Semiconductor variable capacitor and method of making same |
EP0951069A1 (en) * | 1998-04-17 | 1999-10-20 | Interuniversitair Microelektronica Centrum Vzw | Method of fabrication of a microstructure having an inside cavity |
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DEC A ET AL: "RF MICROMACHINED VARACTORS WITH WIDE TUNING RANGE" 1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM. DIGEST OF PAPERS. BALTIMORE, MD, JUNE 7 - 11, 1998, IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, NEW YORK, NY: IEEE, US, vol. SYMP. 2, 7 June 1998 (1998-06-07), pages 309-312, XP000862070 ISBN: 0-7803-4440-5 cited in the application * |
SEONHO SEOK ET AL: "A novel MEMS LC tank for RF voltage controlled oscillator (VCO)" TRANSDUCERS '01. EUROSENSORS XV. 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS. DIGEST OF TECHNICAL PAPERS, PROCEEDINGS OF 11TH INTERNATIONAL CONFERENCE ON SOLID STATE SENSORS AND ACTUATORS TRANSDUCERS '01/EUROSENSORS XV, MUNICH,, pages 1544-1547 vol.2, XP002282805 2001, Berlin, Germany, Springer-Verlag, Germany ISBN: 3-540-42150-5 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100555669C (en) * | 2004-06-30 | 2009-10-28 | 国际商业机器公司 | The manufacture method of variable capacitor of micro electromechanical system |
RU169456U1 (en) * | 2016-07-06 | 2017-03-21 | Общество с ограниченной ответственностью "Базовые технологии" | Three-bit RF MEMS varactor |
Also Published As
Publication number | Publication date |
---|---|
AU2003278176A1 (en) | 2004-05-13 |
US6661069B1 (en) | 2003-12-09 |
TWI232500B (en) | 2005-05-11 |
JP4732754B2 (en) | 2011-07-27 |
JP2006518926A (en) | 2006-08-17 |
CN1689227A (en) | 2005-10-26 |
TW200416833A (en) | 2004-09-01 |
AU2003278176A8 (en) | 2004-05-13 |
KR20050084819A (en) | 2005-08-29 |
CN100487837C (en) | 2009-05-13 |
WO2004038916A3 (en) | 2004-08-12 |
US6696343B1 (en) | 2004-02-24 |
KR100991965B1 (en) | 2010-11-04 |
EP1556949A2 (en) | 2005-07-27 |
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