WO2004036702A3 - Semiconductor optical amplifier with lateral and distributed gain stabilisation - Google Patents

Semiconductor optical amplifier with lateral and distributed gain stabilisation Download PDF

Info

Publication number
WO2004036702A3
WO2004036702A3 PCT/IB2003/005041 IB0305041W WO2004036702A3 WO 2004036702 A3 WO2004036702 A3 WO 2004036702A3 IB 0305041 W IB0305041 W IB 0305041W WO 2004036702 A3 WO2004036702 A3 WO 2004036702A3
Authority
WO
WIPO (PCT)
Prior art keywords
lateral
optical amplifier
semiconductor optical
distributed gain
directions
Prior art date
Application number
PCT/IB2003/005041
Other languages
French (fr)
Other versions
WO2004036702A2 (en
Inventor
Beatrice Dagens
Romain Brenot
Guang-Hua Duan
Thierry Hessler
Original Assignee
Avanex Corp
Beatrice Dagens
Romain Brenot
Guang-Hua Duan
Thierry Hessler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avanex Corp, Beatrice Dagens, Romain Brenot, Guang-Hua Duan, Thierry Hessler filed Critical Avanex Corp
Priority to AU2003274626A priority Critical patent/AU2003274626A1/en
Priority to US10/530,690 priority patent/US7643207B2/en
Publication of WO2004036702A2 publication Critical patent/WO2004036702A2/en
Publication of WO2004036702A3 publication Critical patent/WO2004036702A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold
    • H01S5/5072—Gain clamping, i.e. stabilisation by saturation using a further mode or frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5081—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 specifically standing wave amplifiers

Abstract

A stabilised gain semiconductor optical amplifier (CG-SOA) includes and active waveguide (1) comprising an amplification medium (2), extending in longitudinal (Z), lateral (X) and vertical (Y) directions, and coupled to a laser oscillation structure comprising at least two resonant cavities (13, 14) extending in first (D1) and second (D2) directions which are different from the longitudinal direction (Z) of the active waveguide (1) and arranged in such a way as to permit the establishment of laser oscillations having at least two different relaxation oscillation frequencies.
PCT/IB2003/005041 2002-10-15 2003-10-10 Semiconductor optical amplifier with lateral and distributed gain stabilisation WO2004036702A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003274626A AU2003274626A1 (en) 2002-10-15 2003-10-10 Semiconductor optical amplifier with lateral and distributed gain stabilisation
US10/530,690 US7643207B2 (en) 2002-10-15 2003-10-10 Semiconductor optical amplifier with lateral and distributed gain stabilisation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0212825 2002-10-15
FR0212825A FR2845833A1 (en) 2002-10-15 2002-10-15 Clamped gain semiconductor optical amplifier having active waveguide with three dimension surround coupled laser oscillator with resonant cavities following first/second longitudinal active waveguide directions providing frequencies

Publications (2)

Publication Number Publication Date
WO2004036702A2 WO2004036702A2 (en) 2004-04-29
WO2004036702A3 true WO2004036702A3 (en) 2004-07-22

Family

ID=32039762

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2003/005041 WO2004036702A2 (en) 2002-10-15 2003-10-10 Semiconductor optical amplifier with lateral and distributed gain stabilisation

Country Status (4)

Country Link
US (1) US7643207B2 (en)
AU (1) AU2003274626A1 (en)
FR (1) FR2845833A1 (en)
WO (1) WO2004036702A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7362787B2 (en) * 2005-10-28 2008-04-22 Lucent Technologies Inc. Self-mode-locked semiconductor laser
EP2188875B1 (en) * 2007-09-11 2019-12-11 MACOM Technology Solutions Holdings, Inc. Multiple cavity etched-facet dfb lasers
GB2465754B (en) * 2008-11-26 2011-02-09 Univ Dublin City A semiconductor optical amplifier with a reduced noise figure
EP2521227B1 (en) * 2011-05-04 2016-09-07 Alcatel Lucent Semiconductor optical amplifier device and optical matrix switch
US9025241B2 (en) * 2011-10-14 2015-05-05 Kotura, Inc. Gain medium providing laser and amplifier functionality to optical device
FR2986916A1 (en) * 2012-02-09 2013-08-16 Eolite Systems OPTICAL AMPLIFIER AND PULSE LASER SYSTEM WITH IMPULSE ENERGY LIMITS.
KR20140092214A (en) * 2013-01-15 2014-07-23 오므론 가부시키가이샤 Laser oscillator
US11095097B2 (en) 2016-11-28 2021-08-17 King Abdullah University Of Science And Technology Integrated semiconductor optical amplifier and laser diode at visible wavelength
US11837838B1 (en) 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
WO2022261511A1 (en) * 2021-06-10 2022-12-15 Freedom Photonics Llc Designs for lateral current control in optical amplifiers and lasers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436759A (en) * 1994-06-14 1995-07-25 The Regents Of The University Of California Cross-talk free, low-noise optical amplifier
US6347104B1 (en) * 1999-02-04 2002-02-12 Genoa Corporation Optical signal power monitor and regulator

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3265988A (en) * 1963-08-13 1966-08-09 Bell Telephone Labor Inc Superconducting metallic film maser
US3440561A (en) * 1964-06-25 1969-04-22 Ibm Apparatus employing electronic light shutters for switching the direction of a laser beam along discrete paths
US3414840A (en) * 1965-09-28 1968-12-03 Bell Telephone Labor Inc Synchronization of power sources
US3614659A (en) * 1969-03-14 1971-10-19 Bell Telephone Labor Inc Synchronous coupling of laser oscillators to a common resonator
US3808550A (en) * 1969-12-15 1974-04-30 Bell Telephone Labor Inc Apparatuses for trapping and accelerating neutral particles
US3701956A (en) * 1971-05-14 1972-10-31 Trw Inc Method of an apparatus for generating ultra-short time-duration laser pulses
FR2214182B1 (en) * 1973-01-12 1976-08-27 Anvar
US4156852A (en) * 1978-01-11 1979-05-29 The United States Of America As Represented By The United States Department Of Energy Multipass laser amplification with near-field far-field optical separation
FR2608792B1 (en) * 1986-12-23 1989-03-31 Thomson Csf DEVICE FOR AMPLIFYING OPTICAL SIGNALS WITH A PHOTOSENSITIVE MEDIUM
JPH0392062U (en) * 1989-12-29 1991-09-19
FR2661784B1 (en) * 1990-05-02 1992-07-03 Thomson Csf POWER LASER WITH ACTIVE MIRROR.
ATE155933T1 (en) * 1992-05-06 1997-08-15 Electrox Ltd SYSTEM FOR COMBINING LASER BEAMS
US5257275A (en) * 1992-07-30 1993-10-26 The U.S. Government As Represented By The Secretary Of The Army Multiple output wavelength solid state laser and technique
US5651019A (en) * 1995-04-28 1997-07-22 The United States Of America As Represented By The Secretary Of The Navy Solid-state blue laser source
FR2734097B1 (en) * 1995-05-12 1997-06-06 Thomson Csf SEMICONDUCTOR LASER
EP0755104A1 (en) * 1995-07-21 1997-01-22 Hewlett-Packard GmbH Method for adjusting a laser resonator
EP0808522B1 (en) * 1995-11-08 2000-02-16 Uniphase Opto Holdings, Inc. Semiconductor diode laser, in particular a laser amplifier, and method of manufacturing this laser
US6195483B1 (en) * 1996-09-30 2001-02-27 The United States Of America As Represented By The Secretary Of The Navy Fiber Bragg gratings in chalcogenide or chalcohalide based infrared optical fibers
US5955749A (en) * 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
US6292504B1 (en) * 1999-03-16 2001-09-18 Raytheon Company Dual cavity laser resonator
JP2001141946A (en) * 1999-11-16 2001-05-25 Oki Electric Ind Co Ltd Multiplexing and demultiplexing element
JP2001257413A (en) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp Semiconductor laser device and its manufacturing method
JP2002099007A (en) * 2000-09-21 2002-04-05 Sony Corp Laser beam generator and optical device using the same
DE10152507A1 (en) * 2000-10-25 2002-10-02 Stephan Schiller Short pulse optical parametric oscillator system for optical measuring technology, has optical fiber, multiple mirrors and saturable absorber forming optical resonator which is pumped by laser
US6763046B2 (en) * 2001-03-01 2004-07-13 Applied Optoelectronics, Inc. Method and system employing multiple reflectivity band reflector for laser wavelength monitoring
US6714568B2 (en) * 2001-10-15 2004-03-30 The Boeing Company Active optical system for beam-steering a laser beam
US6704343B2 (en) * 2002-07-18 2004-03-09 Finisar Corporation High power single mode vertical cavity surface emitting laser
US7113526B2 (en) * 2003-10-09 2006-09-26 Photodigm, Inc. Multi-wavelength grating-outcoupled surface emitting laser system
US7248615B2 (en) * 2003-11-25 2007-07-24 Massachusetts Institute Of Technology Electrically-activated photonic crystal microcavity laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436759A (en) * 1994-06-14 1995-07-25 The Regents Of The University Of California Cross-talk free, low-noise optical amplifier
US6347104B1 (en) * 1999-02-04 2002-02-12 Genoa Corporation Optical signal power monitor and regulator

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DOUSSIERE P ET AL: "CLAMPED GAIN TRAVELLING WAVE SEMICONDUCTOR OPTICAL AMPLIFIER FOR WAVELENGTH DIVISION MULTIPLEXING APPLICATIONS", PROCEEDINGS OF THE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE. MAUI, HAWAII, SEPT. 19 - 23, 1994, NEW YORK, IEEE, US, vol. CONF. 14, 19 September 1994 (1994-09-19), pages 185 - 186, XP000514864, ISBN: 0-7803-1755-6 *

Also Published As

Publication number Publication date
AU2003274626A8 (en) 2004-05-04
US7643207B2 (en) 2010-01-05
AU2003274626A1 (en) 2004-05-04
WO2004036702A2 (en) 2004-04-29
FR2845833A1 (en) 2004-04-16
US20050259317A1 (en) 2005-11-24

Similar Documents

Publication Publication Date Title
WO2004036702A3 (en) Semiconductor optical amplifier with lateral and distributed gain stabilisation
WO2002025705A3 (en) Quantum dot devices
CA2361527A1 (en) Opto-electronic oscillators having optical resonators
JP2004528530A5 (en)
CA2335166A1 (en) Optical communication system with co-propagating pump radiation for raman amplification
WO2001028049A3 (en) Low-noise, high-power optical amplifier
WO2002007273A3 (en) Fiber laser stabilization
WO2003040791A3 (en) Semiconductor optical device with improved efficiency and output beam characteristics
EP1447889A3 (en) Compact ultra fast laser
EP1168599A3 (en) High dynamic range low noise amplifier
EP1026798A3 (en) Vertical cavity surface emitting laser (VCSEL), using buried bragg reflectors and method for producing same
WO2002060021A3 (en) Improvements in or relating to lasers
CN109119880B (en) SBS laser driven by sound field
EP1357647A3 (en) Solid state laser master oscillator gain module
IL120754A0 (en) Optical resonators with discontinuous phase elements
WO1998048491A3 (en) Multi-element, single mode microchip lasers
WO2003067721A3 (en) Solid-state diode pumped laser employing oscillator-amplifier
WO2004004082A8 (en) Optical resonator and laser applications
EP1408591A3 (en) Organic vertical cavity lasing devices having organic active region
WO2003049242A3 (en) Optical microwave source
WO2006004994A3 (en) Linear optical amplifier using coupled waveguide induced feedback
WO2001071861A3 (en) Continuously grating-tuned external cavity laser
WO2002013335A3 (en) Edge-emitting semiconductor tunable laser
DE60203701D1 (en) SEMICONDUCTOR LASER WITH A VARIETY OF OPTICALLY ACTIVE AREAS
EP1168541A3 (en) High power single mode laser and method of fabrication

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 10530690

Country of ref document: US

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP