WO2004036175B1 - Apparatus and process for sensing fluoro species in semiconductor processing systems - Google Patents

Apparatus and process for sensing fluoro species in semiconductor processing systems

Info

Publication number
WO2004036175B1
WO2004036175B1 PCT/US2003/032521 US0332521W WO2004036175B1 WO 2004036175 B1 WO2004036175 B1 WO 2004036175B1 US 0332521 W US0332521 W US 0332521W WO 2004036175 B1 WO2004036175 B1 WO 2004036175B1
Authority
WO
WIPO (PCT)
Prior art keywords
sensor assembly
gas sensor
gas
wire
sensing element
Prior art date
Application number
PCT/US2003/032521
Other languages
French (fr)
Other versions
WO2004036175A3 (en
WO2004036175A2 (en
Inventor
Frank Dimeo
Philip S H Chen
Jeffrey W Neuner
James Welch
Michele Stawasz
Thomas H Baum
Mackenzie E King
Ing-Shin Chen
Jeffrey F Roeder
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Priority to AU2003301333A priority Critical patent/AU2003301333A1/en
Priority to CN2003801016670A priority patent/CN1705871B/en
Priority to KR1020057006671A priority patent/KR101048370B1/en
Priority to EP03809006A priority patent/EP1554561A4/en
Priority to JP2004544893A priority patent/JP4488897B2/en
Publication of WO2004036175A2 publication Critical patent/WO2004036175A2/en
Publication of WO2004036175A3 publication Critical patent/WO2004036175A3/en
Publication of WO2004036175B1 publication Critical patent/WO2004036175B1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/128—Microapparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32981—Gas analysis
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49007—Indicating transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/17—Nitrogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/19—Halogen containing

Abstract

A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

Claims

AMENDED CLAIMS
[Received by the International Bureau on 1 June 2004 (01.06.04)]
135. A gas sensor assembly including an array of posts, and one or more free-standing metal sensor wire(s) woven about said posts to provide a woven wire structure for contacting with gas susceptible to presence of one or more target species therein with which the wire is interactive to produce a response indicative of the presence of said one or more target species.
136. The gas sensor assembly of claim 135, wherein the posts are formed of a metal material.
137. The gas sensor assembly of claim 135, wherein the posts are formed of Vespel® polyimide.
138. The gas sensor assembly of claim 136, wherein the wire is bonded at anchoring points to selected ones of said posts.
139. The gas sensor assembly according to claim 135, wherein the woven wire structure is vertically oriented.
140. The gas sensor assembly according to claim 135, wherein the woven wire structure is horizontally oriented.
141. The gas sensor assembly of claim 135, wherein the gas sensing wire is wrapped around posts in a racetrack pattern.
142. The gas sensor assembly of claim 135, wherein the gas sensing wire is wrapped around posts in a figure-eight pattern.
143. The gas sensor assembly of claim 135, wherein the gas sensing wire is wrapped around posts in a "S"-shaped pattern.
144. The gas sensor assembly of claim 135, comprising a Vespel® polyimide block to which said posts are mounted.
145. The gas sensor assembly of claim 135, further comprising a Vespel® polyimide block machined to form at least some of said posts.
146. The gas sensor assembly of claim 135, comprising a plurality of wires respectively formed of different sensing metals, and/or including a multiplicity of weaving conformations, to provide a matrix structure.
147. The gas sensor assembly of claim 135, including a machined Vespel® polyimide structure for support of the woven wire structure.
148. The gas sensor assembly of claim 147, wherein the machined Vespel® polyimide structure comprises cut channels therein through which gas sensing wire is woven.
149. The gas sensor assembly of claim 147, wherein the machined Vespel® polyimide structure forms vertical columns around which gas sensing wire is wound.
150. The gas sensor assembly of claim 147, wherein the machined Vespel® polyimide structure includes cut portions supporting gas sensing wire in a controlled, vertical position.
151. The gas sensor assembly of claim 147, wherein the machined Vespel® polyimide structure has holes formed therein through which gas sensing wire is threaded.
152. The gas sensor assembly of claim 135, further comprising a Vespel® polyimide fora inous support supporting said woven wire structure, wherein said wire is supported in openings of said foraminous support.
153. A gas sensor assembly comprising a micro-hotplate structure including a free-standing gas sensing element responsive to presence of fluoro species by response indicative of presence or increase in concentration of said fluoro species.
154. The gas sensor assembly of claim 153, wherein the gas sensing element comprises a metal selected from the group consisting of Ti, V, Cr, Mn, Nb, Mo, Ru, Pd, Ag, Ir, Ni, Al, Cu, Pt, and alloys and combinations thereof.
155. The gas sensor assembly of claim 153, wherein the gas sensing element comprises an inorganic sensor film.
156. The gas sensor assembly of claim 153, wherein the gas sensing element comprises an organic sensor film.
157. The gas sensor assembly of claim 156, wherein said gas sensing element comprises a metal selected from the group consisting of copper and nickel.
158. A gas sensor assembly comprising a free-standing gas sensing element responsive to exposure to fluoro species by a response indicative of said fluoro species, wherein said freestanding gas sensing element comprises a composite filament including a filament core having a fluoro species-sensitive material coated thereon, wherein said core material has a higher resistivity than said fluoro species-responsive material.
159. The gas sensor assembly of claim 158, wherein the filament core comprises Monel.
160. The gas sensor assembly of claim 159, wherein the fluoro species-responsive material comprises nickel.
161. A gas sensor assembly comprising a free-standing gas sensing element coupled to connector pins of a microelectronic device package, wherein the free-standing gas sensing element is arranged for contact with a gaseous environment susceptible to the presence or change of concentration of one or more target gas species therein, and the free-standing gas sensing element is formed of a material that in exposure to the target gas species exhibits a response transmissible through said connector pins of the microelectronic device package.
162. The gas sensor assembly of claim 161, wherein the microelectronic device package comprises a chip carrier.
163. The gas sensor assembly of claim 161, wherein the free-standing gas sensing element comprises a wire or foil element.
164. The gas sensor assembly of claim 161, wherein the free-standing gas sensing element comprises a wire supported on an insulative scaffolding member in an extended conformation including a multiplicity of windings.
PCT/US2003/032521 2002-10-17 2003-10-15 Apparatus and process for sensing fluoro species in semiconductor processing systems WO2004036175A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AU2003301333A AU2003301333A1 (en) 2002-10-17 2003-10-15 Apparatus and process for sensing fluoro species in semiconductor processing systems
CN2003801016670A CN1705871B (en) 2002-10-17 2003-10-15 Apparatus and process for sensing fluoro species in semiconductor processing systems
KR1020057006671A KR101048370B1 (en) 2002-10-17 2003-10-15 Apparatus and Method for Sensing Fluorine Species in Semiconductor Process Systems
EP03809006A EP1554561A4 (en) 2002-10-17 2003-10-15 Apparatus and process for sensing fluoro species in semiconductor processing systems
JP2004544893A JP4488897B2 (en) 2002-10-17 2003-10-15 Apparatus and process for detecting fluorine species in semiconductor processing systems

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/273,036 2002-10-17
US10/273,036 US7080545B2 (en) 2002-10-17 2002-10-17 Apparatus and process for sensing fluoro species in semiconductor processing systems

Publications (3)

Publication Number Publication Date
WO2004036175A2 WO2004036175A2 (en) 2004-04-29
WO2004036175A3 WO2004036175A3 (en) 2004-06-17
WO2004036175B1 true WO2004036175B1 (en) 2004-07-22

Family

ID=32092714

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/032521 WO2004036175A2 (en) 2002-10-17 2003-10-15 Apparatus and process for sensing fluoro species in semiconductor processing systems

Country Status (8)

Country Link
US (5) US7080545B2 (en)
EP (1) EP1554561A4 (en)
JP (1) JP4488897B2 (en)
KR (1) KR101048370B1 (en)
CN (1) CN1705871B (en)
AU (1) AU2003301333A1 (en)
TW (1) TWI322449B (en)
WO (1) WO2004036175A2 (en)

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US7475588B2 (en) 2009-01-13
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US7296460B2 (en) 2007-11-20
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