WO2004008537A3 - Photodetector circuits - Google Patents

Photodetector circuits Download PDF

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Publication number
WO2004008537A3
WO2004008537A3 PCT/GB2003/002851 GB0302851W WO2004008537A3 WO 2004008537 A3 WO2004008537 A3 WO 2004008537A3 GB 0302851 W GB0302851 W GB 0302851W WO 2004008537 A3 WO2004008537 A3 WO 2004008537A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
annular
insulation layer
apd
cmos
Prior art date
Application number
PCT/GB2003/002851
Other languages
French (fr)
Other versions
WO2004008537A2 (en
Inventor
Gillian Fiona Marshall
David John Robbins
Weng Yee Leong
Original Assignee
Qinetiq Ltd
Gillian Fiona Marshall
David John Robbins
Weng Yee Leong
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd, Gillian Fiona Marshall, David John Robbins, Weng Yee Leong filed Critical Qinetiq Ltd
Priority to US10/520,849 priority Critical patent/US7453131B2/en
Priority to JP2004520807A priority patent/JP4715203B2/en
Priority to AU2003253098A priority patent/AU2003253098A1/en
Priority to EP03763962A priority patent/EP1532686A2/en
Priority to CA002492696A priority patent/CA2492696A1/en
Publication of WO2004008537A2 publication Critical patent/WO2004008537A2/en
Publication of WO2004008537A3 publication Critical patent/WO2004008537A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Abstract

A photodetector circuit incorporates an APD detector structure (10) comprising a p- silicon handle wafer (12) on which a Si02 insulation layer (14) is deposited in known manner. During manufacture a circular opening (16) is formed through the insulation layer (14) by conventional photolithography and etching, and an annular p+ substrate contact ring (18) is implanted in the handle wafer (12) after opening of the window (16). The APD itself is formed by implantation of a p region (20) and an n+ region (22). After the various implantation steps a metallisation layer is applied, and annular metal contacts are formed by the application of suitable photolithography and etching steps, these contacts comprising an annular contact (26) constituting the negative terminal and connected to the p+ substrate contact ring (18), an annular metal contact (28) constituting the positive terminal and connected to the n+ region (22) of the APD, and source and drain contacts (30 and 32) connected to the source and drain of one or more CMOS MOSFET devices of the associated CMOS readout circuitry fabricated within a Si layer (34) formed on top of the insulation layer (14). Such an arrangement overcomes the problem of combining APDs with CMOS circuits in that APDs operate at relatively high reverse bias (15-30V) and CMOS circuits operate at low voltage (5V).
PCT/GB2003/002851 2002-07-11 2003-07-03 Photodetector circuits WO2004008537A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/520,849 US7453131B2 (en) 2002-07-11 2003-07-03 Photodiode detector and associated readout circuitry
JP2004520807A JP4715203B2 (en) 2002-07-11 2003-07-03 Photodetector circuit
AU2003253098A AU2003253098A1 (en) 2002-07-11 2003-07-03 Photodetector circuits
EP03763962A EP1532686A2 (en) 2002-07-11 2003-07-03 Photodetector circuits
CA002492696A CA2492696A1 (en) 2002-07-11 2003-07-03 Photodetector and associated readout circuitry

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0216075.2A GB0216075D0 (en) 2002-07-11 2002-07-11 Photodetector circuits
GB0216075.2 2002-07-11

Publications (2)

Publication Number Publication Date
WO2004008537A2 WO2004008537A2 (en) 2004-01-22
WO2004008537A3 true WO2004008537A3 (en) 2004-09-23

Family

ID=9940248

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2003/002851 WO2004008537A2 (en) 2002-07-11 2003-07-03 Photodetector circuits

Country Status (8)

Country Link
US (1) US7453131B2 (en)
EP (1) EP1532686A2 (en)
JP (1) JP4715203B2 (en)
AU (1) AU2003253098A1 (en)
CA (1) CA2492696A1 (en)
GB (1) GB0216075D0 (en)
TW (1) TW200402146A (en)
WO (1) WO2004008537A2 (en)

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Also Published As

Publication number Publication date
JP4715203B2 (en) 2011-07-06
EP1532686A2 (en) 2005-05-25
US7453131B2 (en) 2008-11-18
CA2492696A1 (en) 2004-01-22
AU2003253098A1 (en) 2004-02-02
JP2005532695A (en) 2005-10-27
GB0216075D0 (en) 2002-08-21
WO2004008537A2 (en) 2004-01-22
TW200402146A (en) 2004-02-01
US20050253132A1 (en) 2005-11-17

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