WO2003088316A3 - Electropolishing and electroplating methods - Google Patents

Electropolishing and electroplating methods Download PDF

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Publication number
WO2003088316A3
WO2003088316A3 PCT/US2003/011417 US0311417W WO03088316A3 WO 2003088316 A3 WO2003088316 A3 WO 2003088316A3 US 0311417 W US0311417 W US 0311417W WO 03088316 A3 WO03088316 A3 WO 03088316A3
Authority
WO
WIPO (PCT)
Prior art keywords
electroplating
current density
density range
recessed regions
metal layer
Prior art date
Application number
PCT/US2003/011417
Other languages
French (fr)
Other versions
WO2003088316A2 (en
Inventor
Hui Wang
Jian Wang
Peihaur Yih
Huiquan Wu
Original Assignee
Acm Res Inc
Hui Wang
Jian Wang
Peihaur Yih
Huiquan Wu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acm Res Inc, Hui Wang, Jian Wang, Peihaur Yih, Huiquan Wu filed Critical Acm Res Inc
Priority to AU2003226367A priority Critical patent/AU2003226367A1/en
Priority to KR10-2004-7016217A priority patent/KR20040097337A/en
Priority to CN038081660A priority patent/CN1685086B/en
Priority to EP03746750A priority patent/EP1495161A4/en
Priority to CA002479873A priority patent/CA2479873A1/en
Priority to US10/510,656 priority patent/US20060049056A1/en
Priority to JP2003585151A priority patent/JP2005522587A/en
Publication of WO2003088316A2 publication Critical patent/WO2003088316A2/en
Publication of WO2003088316A3 publication Critical patent/WO2003088316A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed region within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer is planar above the recessed regions. The second current density range is greater than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second density being greater than the first density, and electroplating within a third current density range thereafter.
PCT/US2003/011417 2002-04-12 2003-04-11 Electropolishing and electroplating methods WO2003088316A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
AU2003226367A AU2003226367A1 (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods
KR10-2004-7016217A KR20040097337A (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods
CN038081660A CN1685086B (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods
EP03746750A EP1495161A4 (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods
CA002479873A CA2479873A1 (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods
US10/510,656 US20060049056A1 (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods
JP2003585151A JP2005522587A (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US37226302P 2002-04-12 2002-04-12
US60/372,263 2002-04-12
US38213302P 2002-05-21 2002-05-21
US60/382,133 2002-05-21
US38782602P 2002-06-08 2002-06-08
US60/387,826 2002-06-08
US39831602P 2002-07-24 2002-07-24
US60/398,316 2002-07-24

Publications (2)

Publication Number Publication Date
WO2003088316A2 WO2003088316A2 (en) 2003-10-23
WO2003088316A3 true WO2003088316A3 (en) 2003-12-31

Family

ID=29255582

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/011417 WO2003088316A2 (en) 2002-04-12 2003-04-11 Electropolishing and electroplating methods

Country Status (9)

Country Link
US (1) US20060049056A1 (en)
EP (1) EP1495161A4 (en)
JP (2) JP2005522587A (en)
KR (1) KR20040097337A (en)
CN (1) CN1685086B (en)
AU (1) AU2003226367A1 (en)
CA (1) CA2479873A1 (en)
TW (1) TWI267134B (en)
WO (1) WO2003088316A2 (en)

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US20050275944A1 (en) * 2004-06-11 2005-12-15 Wang Jian J Optical films and methods of making the same
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US7309653B2 (en) * 2005-02-24 2007-12-18 International Business Machines Corporation Method of forming damascene filament wires and the structure so formed
US7541213B2 (en) * 2006-07-21 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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US7837841B2 (en) * 2007-03-15 2010-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatuses for electrochemical deposition, conductive layer, and fabrication methods thereof
US8784636B2 (en) * 2007-12-04 2014-07-22 Ebara Corporation Plating apparatus and plating method
WO2010022969A1 (en) * 2008-08-29 2010-03-04 Advanced Micro Devices, Inc. Using a cap layer in metallization systems of semiconductor devices as a cmp and etch stop layer
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US10539723B2 (en) 2016-10-19 2020-01-21 Finisar Corporation Phase-transforming optical reflector formed by partial etching or by partial etching with reflow
US9875958B1 (en) * 2016-11-09 2018-01-23 International Business Machines Corporation Trace/via hybrid structure and method of manufacture
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KR20210151157A (en) 2019-04-09 2021-12-13 쓰리디엠 바이오메디컬 피티와이 엘티디 Electropolishing method
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US6162344A (en) * 1998-07-22 2000-12-19 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
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Also Published As

Publication number Publication date
EP1495161A2 (en) 2005-01-12
AU2003226367A1 (en) 2003-10-27
CA2479873A1 (en) 2003-10-23
EP1495161A4 (en) 2006-06-28
AU2003226367A8 (en) 2003-10-27
CN1685086A (en) 2005-10-19
JP2006200043A (en) 2006-08-03
TW200402781A (en) 2004-02-16
TWI267134B (en) 2006-11-21
CN1685086B (en) 2010-10-13
JP2005522587A (en) 2005-07-28
KR20040097337A (en) 2004-11-17
US20060049056A1 (en) 2006-03-09
WO2003088316A2 (en) 2003-10-23

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