WO2003081216A3 - Process monitoring using infrared optical diagnostics - Google Patents

Process monitoring using infrared optical diagnostics Download PDF

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Publication number
WO2003081216A3
WO2003081216A3 PCT/US2003/006710 US0306710W WO03081216A3 WO 2003081216 A3 WO2003081216 A3 WO 2003081216A3 US 0306710 W US0306710 W US 0306710W WO 03081216 A3 WO03081216 A3 WO 03081216A3
Authority
WO
WIPO (PCT)
Prior art keywords
process monitoring
infrared optical
substrate
optical diagnostics
gaseous
Prior art date
Application number
PCT/US2003/006710
Other languages
French (fr)
Other versions
WO2003081216A2 (en
Inventor
Audunn Ludviksson
Original Assignee
Tokyo Electron Ltd
Audunn Ludviksson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Audunn Ludviksson filed Critical Tokyo Electron Ltd
Priority to US10/507,201 priority Critical patent/US7102132B2/en
Priority to AU2003220019A priority patent/AU2003220019A1/en
Publication of WO2003081216A2 publication Critical patent/WO2003081216A2/en
Publication of WO2003081216A3 publication Critical patent/WO2003081216A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A method and apparatus for real-time monitoring of the substrate and the gaseous process environment in a semiconductor process step is described. The method uses infrared spectroscopy for in-situ analysis of gaseous molecular species in the process region (120) and characterization of adsorbed chemical species on a substrate (110). The process monitoring can be applied to endpoint- and fault detection in etching and deposition processes, and chamber cleaning and chamber condition steps.
PCT/US2003/006710 2002-03-20 2003-03-17 Process monitoring using infrared optical diagnostics WO2003081216A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/507,201 US7102132B2 (en) 2002-03-20 2003-03-17 Process monitoring using infrared optical diagnostics
AU2003220019A AU2003220019A1 (en) 2002-03-20 2003-03-17 Process monitoring using infrared optical diagnostics

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36552902P 2002-03-20 2002-03-20
US60/365,529 2002-03-20

Publications (2)

Publication Number Publication Date
WO2003081216A2 WO2003081216A2 (en) 2003-10-02
WO2003081216A3 true WO2003081216A3 (en) 2003-11-13

Family

ID=28454671

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/006710 WO2003081216A2 (en) 2002-03-20 2003-03-17 Process monitoring using infrared optical diagnostics

Country Status (3)

Country Link
US (1) US7102132B2 (en)
AU (1) AU2003220019A1 (en)
WO (1) WO2003081216A2 (en)

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KR100390553B1 (en) * 2000-12-30 2003-07-07 주식회사 동진쎄미켐 method of controlling metal-layer etching process and method of regenerating etchant composition using near infrared spectrometer
US7102132B2 (en) * 2002-03-20 2006-09-05 Tokyo Electron Limited Process monitoring using infrared optical diagnostics
KR100476931B1 (en) * 2002-09-19 2005-03-16 삼성전자주식회사 Method of optimizing seasoning recipe
TWI240326B (en) * 2002-10-31 2005-09-21 Tokyo Electron Ltd Method and apparatus for determining an etch property using an endpoint signal
US7109046B1 (en) * 2004-01-30 2006-09-19 Advanced Micro Devices, Inc. Surface oxide tabulation and photo process control and cost savings
US20050211264A1 (en) * 2004-03-25 2005-09-29 Tokyo Electron Limited Of Tbs Broadcast Center Method and processing system for plasma-enhanced cleaning of system components
US7243548B2 (en) * 2004-04-07 2007-07-17 Ut-Battelle, Llc Surface wave chemical detector using optical radiation
WO2008016569A2 (en) 2006-07-31 2008-02-07 Applied Materials, Inc. Methods and apparatus for insitu analysis of gases in electronic device fabrication systems
US8520194B2 (en) * 2006-11-29 2013-08-27 Macronix International Co., Ltd. Method of forming a deposited material by utilizing a multi-step deposition/etch/deposition (D/E/D) process
US8184288B2 (en) * 2006-11-29 2012-05-22 Macronix International Co., Ltd. Method of depositing a silicon-containing material by utilizing a multi-step fill-in process in a deposition machine
TWI337206B (en) * 2006-11-29 2011-02-11 Macronix Int Co Ltd Apc system and monitoring method for plasma process tool
US7630859B2 (en) * 2007-05-01 2009-12-08 Verity Instruments, Inc. Method and apparatus for reducing the effects of window clouding on a viewport window in a reactive environment
DE102007029666B4 (en) * 2007-06-27 2011-03-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for processing a substrate
US7907260B2 (en) * 2007-06-29 2011-03-15 Lam Research Corporation Collimator arrangements including multiple collimators and implementation methods thereof
WO2009141804A1 (en) * 2008-05-22 2009-11-26 Nxp B.V. Deposition method
DE102009031764A1 (en) 2009-06-26 2011-01-05 Technische Universität Dresden Method and device for determining the adsorption of a gas on materials
CN102492939A (en) * 2011-12-29 2012-06-13 中国科学院半导体研究所 Atomic layer deposition apparatus integrated with Fourier transform infrared in-situ monitoring system
US9299541B2 (en) * 2012-03-30 2016-03-29 Lam Research Corporation Methods and apparatuses for effectively reducing gas residence time in a plasma processing chamber
US9627186B2 (en) * 2014-08-29 2017-04-18 Lam Research Corporation System, method and apparatus for using optical data to monitor RF generator operations
US10041873B2 (en) 2016-05-02 2018-08-07 Kla-Tencor Corporation Porosity measurement of semiconductor structures
US10145674B2 (en) * 2016-05-02 2018-12-04 Kla-Tencor Corporation Measurement of semiconductor structures with capillary condensation
US10281263B2 (en) * 2016-05-02 2019-05-07 Kla-Tencor Corporation Critical dimension measurements with gaseous adsorption
CN106504971B (en) * 2017-01-03 2018-03-16 京东方科技集团股份有限公司 A kind of plasma etching method and plasma etching device
WO2019195100A1 (en) * 2018-04-02 2019-10-10 Applied Materials, Inc. Inline chamber metrology
GB2589367B (en) * 2019-11-29 2022-01-12 Thermo Fisher Scient Ecublens Sarl Improvements in optical emission spectrometry
CN111647855A (en) * 2020-07-16 2020-09-11 合肥邦诺科技有限公司 Vacuum coating substrate temperature monitoring assembly based on infrared detection technology
US11664283B2 (en) 2021-08-20 2023-05-30 Tokyo Electron Limited Raman sensor for supercritical fluids metrology
US20230411129A1 (en) * 2022-06-15 2023-12-21 Applied Materials, Inc. Closed-loop control of plasma source via feedback from laser absorption species sensor

Citations (9)

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US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
US5313044A (en) * 1992-04-28 1994-05-17 Duke University Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor
US5793042A (en) * 1996-09-30 1998-08-11 Quick; Nathaniel R. Infrared spectrophotometer accelerated corrosion-erosion analysis system
US5841533A (en) * 1995-09-01 1998-11-24 Innovative Lasers Corporation Intracavity laser spectroscopy for high sensitivity detection of contaminants in gas
US5880850A (en) * 1996-04-18 1999-03-09 American Air Liquide Inc Method and system for sensitive detection of molecular species in a vacuum by harmonic detection spectroscopy
US5900633A (en) * 1997-12-15 1999-05-04 On-Line Technologies, Inc Spectrometric method for analysis of film thickness and composition on a patterned sample
WO2001042767A2 (en) * 1999-12-13 2001-06-14 Applied Materials, Inc. Detecting a process endpoint from a change in reflectivity
US6366346B1 (en) * 1998-11-19 2002-04-02 Applied Materials, Inc. Method and apparatus for optical detection of effluent composition
US6455437B1 (en) * 1999-04-07 2002-09-24 Applied Materials Inc. Method and apparatus for monitoring the process state of a semiconductor device fabrication process

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US5985032A (en) * 1995-05-17 1999-11-16 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus
US20020158202A1 (en) * 2001-01-08 2002-10-31 Webber Michael E. Laser-based sensor for measuring combustion parameters
US7102132B2 (en) * 2002-03-20 2006-09-05 Tokyo Electron Limited Process monitoring using infrared optical diagnostics

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
US5313044A (en) * 1992-04-28 1994-05-17 Duke University Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor
US5841533A (en) * 1995-09-01 1998-11-24 Innovative Lasers Corporation Intracavity laser spectroscopy for high sensitivity detection of contaminants in gas
US5880850A (en) * 1996-04-18 1999-03-09 American Air Liquide Inc Method and system for sensitive detection of molecular species in a vacuum by harmonic detection spectroscopy
US5793042A (en) * 1996-09-30 1998-08-11 Quick; Nathaniel R. Infrared spectrophotometer accelerated corrosion-erosion analysis system
US5900633A (en) * 1997-12-15 1999-05-04 On-Line Technologies, Inc Spectrometric method for analysis of film thickness and composition on a patterned sample
US6366346B1 (en) * 1998-11-19 2002-04-02 Applied Materials, Inc. Method and apparatus for optical detection of effluent composition
US6455437B1 (en) * 1999-04-07 2002-09-24 Applied Materials Inc. Method and apparatus for monitoring the process state of a semiconductor device fabrication process
WO2001042767A2 (en) * 1999-12-13 2001-06-14 Applied Materials, Inc. Detecting a process endpoint from a change in reflectivity

Also Published As

Publication number Publication date
AU2003220019A1 (en) 2003-10-08
WO2003081216A2 (en) 2003-10-02
US20050082482A1 (en) 2005-04-21
US7102132B2 (en) 2006-09-05

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