WO2003046974A3 - Kondensator und verfahren zum herstellen eines kondensators - Google Patents

Kondensator und verfahren zum herstellen eines kondensators Download PDF

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Publication number
WO2003046974A3
WO2003046974A3 PCT/EP2002/012786 EP0212786W WO03046974A3 WO 2003046974 A3 WO2003046974 A3 WO 2003046974A3 EP 0212786 W EP0212786 W EP 0212786W WO 03046974 A3 WO03046974 A3 WO 03046974A3
Authority
WO
WIPO (PCT)
Prior art keywords
capacitor
trench
conductive material
semiconductor substrate
contact structure
Prior art date
Application number
PCT/EP2002/012786
Other languages
English (en)
French (fr)
Other versions
WO2003046974A2 (de
Inventor
Carsten Ahrens
Wolfgang Hartung
Christian Herzum
Reinhard Losehand
Angelika Ruegemer
Original Assignee
Infineon Technologies Ag
Carsten Ahrens
Wolfgang Hartung
Christian Herzum
Reinhard Losehand
Angelika Ruegemer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Carsten Ahrens, Wolfgang Hartung, Christian Herzum, Reinhard Losehand, Angelika Ruegemer filed Critical Infineon Technologies Ag
Priority to AU2002356602A priority Critical patent/AU2002356602A1/en
Priority to EP02803774A priority patent/EP1449245A2/de
Publication of WO2003046974A2 publication Critical patent/WO2003046974A2/de
Publication of WO2003046974A3 publication Critical patent/WO2003046974A3/de
Priority to US10/853,740 priority patent/US7030457B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors

Abstract

Ein Kondensator umfaßt ein Halbleitersubstrat (114), in dem ein Graben (112a, 112b) gebildet ist, durch den das Substrat dotiert wird. Eine dielektrische Schicht (118) bedeckt die Oberfläche des Grabens (112a, 112b), wobei ferner ein elektrisch leitfähiges Material (120a, 120b) in dem Graben angeordnet ist. Eine erste Kontaktstruktur (126) zum elektrisch leitfähigen Kontaktieren des elektrisch leitfähigen Materials (126) in dem Graben (112a, 112b) und eine zweite Kontaktstruktur (130) zum elektrisch leitfähigen Kontaktieren des dotierten Halbleitersubstrats (114) sind ferner in dem Kondensator gebildet. Der Kondensator weist einen geringen Reihenwiderstand der Elektroden auf und kann auf einfache Weise hergestellt werden.
PCT/EP2002/012786 2001-11-30 2002-11-14 Kondensator und verfahren zum herstellen eines kondensators WO2003046974A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002356602A AU2002356602A1 (en) 2001-11-30 2002-11-14 Capacitor and a method for producing a capacitor
EP02803774A EP1449245A2 (de) 2001-11-30 2002-11-14 Kondensator und verfahren zum herstellen eines kondensators
US10/853,740 US7030457B2 (en) 2001-11-30 2004-05-25 Capacitor and method for producing a capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10158798A DE10158798A1 (de) 2001-11-30 2001-11-30 Kondensator und Verfahren zum Herstellen eines Kondensators
DE10158798.8 2001-11-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/853,740 Continuation US7030457B2 (en) 2001-11-30 2004-05-25 Capacitor and method for producing a capacitor

Publications (2)

Publication Number Publication Date
WO2003046974A2 WO2003046974A2 (de) 2003-06-05
WO2003046974A3 true WO2003046974A3 (de) 2003-12-31

Family

ID=7707533

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/012786 WO2003046974A2 (de) 2001-11-30 2002-11-14 Kondensator und verfahren zum herstellen eines kondensators

Country Status (6)

Country Link
US (1) US7030457B2 (de)
EP (1) EP1449245A2 (de)
CN (1) CN100423211C (de)
AU (1) AU2002356602A1 (de)
DE (1) DE10158798A1 (de)
WO (1) WO2003046974A2 (de)

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Publication number Priority date Publication date Assignee Title
US7280590B1 (en) * 2003-09-11 2007-10-09 Xilinx, Inc. Receiver termination network and application thereof
JP4830360B2 (ja) * 2005-06-17 2011-12-07 株式会社デンソー 半導体装置およびその製造方法
JP5076570B2 (ja) * 2007-03-16 2012-11-21 富士通セミコンダクター株式会社 半導体装置とその製造方法
US8429085B2 (en) * 2007-06-22 2013-04-23 Visa U.S.A. Inc. Financial transaction token with onboard power source
US9324071B2 (en) 2008-03-20 2016-04-26 Visa U.S.A. Inc. Powering financial transaction token with onboard power source
US8143659B2 (en) 2008-04-14 2012-03-27 Infineon Technologies Ag Vertical trench capacitor, chip comprising the capacitor, and method for producing the capacitor
US8552829B2 (en) 2010-11-19 2013-10-08 Infineon Technologies Austria Ag Transformer device and method for manufacturing a transformer device
US9111781B2 (en) 2012-02-24 2015-08-18 Infineon Technologies Ag Trench capacitors and methods of forming the same
US9318485B2 (en) 2012-08-10 2016-04-19 Infineon Technologies Ag Capacitor arrangements and method for manufacturing a capacitor arrangement
EP2999002A1 (de) * 2014-09-18 2016-03-23 Services Petroliers Schlumberger Kondensatorzelle und Verfahren zu ihrer Herstellung
CN105390480B (zh) * 2015-10-23 2017-11-28 西安理工大学 基于硅通孔阵列的三维高值集成电容器及其制作方法
US10084035B2 (en) * 2015-12-30 2018-09-25 Teledyne Scientific & Imaging, Llc Vertical capacitor contact arrangement
EP3297024A1 (de) * 2016-09-20 2018-03-21 Ipdia 3d-kondensator-struktur
EP3680934A1 (de) * 2019-01-08 2020-07-15 Murata Manufacturing Co., Ltd. Rc-architekturen und verfahren zur herstellung davon
CN113497006A (zh) * 2020-03-20 2021-10-12 中芯国际集成电路制造(北京)有限公司 电容结构及其形成方法

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EP0283964A2 (de) * 1987-03-20 1988-09-28 Nec Corporation Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff
DE19713052A1 (de) * 1997-03-27 1998-10-01 Siemens Ag Kondensatorstruktur
US6140199A (en) * 1997-06-06 2000-10-31 Telefonaktiebolaget Im Ericsson Method and arrangement of a buried capacitor, and a buried capacitor arranged according to said method
US6144055A (en) * 1995-03-15 2000-11-07 Kabushiki Kaisha Toshiba Semiconductor memory device

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US4017885A (en) * 1973-10-25 1977-04-12 Texas Instruments Incorporated Large value capacitor
DE8603689U1 (de) * 1986-02-12 1987-08-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
EP0479143A1 (de) 1990-10-02 1992-04-08 Ramtron International Corporation Grabenkondensator-DRAM mit Spannungsfeldisolation
US5256588A (en) * 1992-03-23 1993-10-26 Motorola, Inc. Method for forming a transistor and a capacitor for use in a vertically stacked dynamic random access memory cell
DE4428195C1 (de) * 1994-08-09 1995-04-20 Siemens Ag Verfahren zur Herstellung eines Siliziumkondensators
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283964A2 (de) * 1987-03-20 1988-09-28 Nec Corporation Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff
US6144055A (en) * 1995-03-15 2000-11-07 Kabushiki Kaisha Toshiba Semiconductor memory device
DE19713052A1 (de) * 1997-03-27 1998-10-01 Siemens Ag Kondensatorstruktur
US6140199A (en) * 1997-06-06 2000-10-31 Telefonaktiebolaget Im Ericsson Method and arrangement of a buried capacitor, and a buried capacitor arranged according to said method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 20 10 July 2001 (2001-07-10) *
ROOZEBOOM F ET AL: "High-value MOS capacitor arrays in ultradeep trenches in silicon", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 53, no. 1-4, June 2000 (2000-06-01), pages 581 - 584, XP004237840, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
US7030457B2 (en) 2006-04-18
DE10158798A1 (de) 2003-06-18
CN100423211C (zh) 2008-10-01
WO2003046974A2 (de) 2003-06-05
EP1449245A2 (de) 2004-08-25
CN1596463A (zh) 2005-03-16
US20050013090A1 (en) 2005-01-20
AU2002356602A1 (en) 2003-06-10

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