WO2003021634A3 - High q factor mems resonators - Google Patents

High q factor mems resonators Download PDF

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Publication number
WO2003021634A3
WO2003021634A3 PCT/US2002/025866 US0225866W WO03021634A3 WO 2003021634 A3 WO2003021634 A3 WO 2003021634A3 US 0225866 W US0225866 W US 0225866W WO 03021634 A3 WO03021634 A3 WO 03021634A3
Authority
WO
WIPO (PCT)
Prior art keywords
vibratable
factor
die
members
resonator
Prior art date
Application number
PCT/US2002/025866
Other languages
French (fr)
Other versions
WO2003021634A2 (en
Inventor
Feng Niu
Kenneth D Cornett
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2002329746A priority Critical patent/AU2002329746A1/en
Publication of WO2003021634A2 publication Critical patent/WO2003021634A2/en
Publication of WO2003021634A3 publication Critical patent/WO2003021634A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02433—Means for compensation or elimination of undesired effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane

Abstract

Microelectromechanical resonators (102) that can be fabricated on a semiconductor die by processes normally used in fabricating microelectronics (e.g., CMOS) circuits are provided. The resonators comprises at least two vibratable members (112, 114) that are closely spaced relative to a wavelength associated with their vibrating frequency, and driven to vibrate one-half a vibration period out of phase with each other, i.e. to mirror each others motion. Driving the vibratable members as stated leads to destructive interference effects that suppress leakage of acoustic energy from the vibratable members into the die, and improve the Q-factor of the resonator. Vibratable members in the form of vibratable plates that are formed by deep anisotropic etching one or more trenches (110, 112, 114) in the die are disclosed. Embodiments in which two sets of vibratable plates are spaced by 1 the aforementioned wavelength to further suppress acoustic energy leakage, and improve the Q-factor of the resonator are disclosed.
PCT/US2002/025866 2001-08-31 2002-08-14 High q factor mems resonators WO2003021634A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002329746A AU2002329746A1 (en) 2001-08-31 2002-08-14 High q factor mems resonators

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/944,568 US6624726B2 (en) 2001-08-31 2001-08-31 High Q factor MEMS resonators
US09/944,568 2001-08-31

Publications (2)

Publication Number Publication Date
WO2003021634A2 WO2003021634A2 (en) 2003-03-13
WO2003021634A3 true WO2003021634A3 (en) 2003-04-17

Family

ID=25481653

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/025866 WO2003021634A2 (en) 2001-08-31 2002-08-14 High q factor mems resonators

Country Status (3)

Country Link
US (1) US6624726B2 (en)
AU (1) AU2002329746A1 (en)
WO (1) WO2003021634A2 (en)

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US7456042B2 (en) * 2006-06-04 2008-11-25 Robert Bosch Gmbh Microelectromechanical systems having stored charge and methods for fabricating and using same
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JP5375251B2 (en) * 2009-03-26 2013-12-25 セイコーエプソン株式会社 RESONANT CIRCUIT, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
US8035462B2 (en) * 2008-06-18 2011-10-11 Seiko Epson Corporation Resonant circuit, method of producing same, and electronic device
JP5505596B2 (en) * 2008-06-18 2014-05-28 セイコーエプソン株式会社 Resonant circuit, oscillation circuit, filter circuit, and electronic device
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CN102640417B (en) 2009-03-18 2014-11-19 Nxp股份有限公司 Resonator device and method of optimizing a Q-factor
EP2506430B1 (en) 2011-03-28 2017-11-22 Nxp B.V. Resonator and method of controlling the same
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US9252707B2 (en) * 2012-12-20 2016-02-02 Silicon Laboratories Inc. MEMS mass bias to track changes in bias conditions and reduce effects of flicker noise
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CN110286140B (en) * 2019-06-28 2022-01-25 中国人民解放军陆军工程大学 Method for detecting vibration characteristics of resonator of nano-electromechanical system

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Also Published As

Publication number Publication date
US6624726B2 (en) 2003-09-23
US20030052742A1 (en) 2003-03-20
AU2002329746A1 (en) 2003-03-18
WO2003021634A2 (en) 2003-03-13

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