WO2003019668A1 - Capteur d'image couleur a colorimetrie amelioree et procede de fabrication - Google Patents
Capteur d'image couleur a colorimetrie amelioree et procede de fabrication Download PDFInfo
- Publication number
- WO2003019668A1 WO2003019668A1 PCT/FR2002/002978 FR0202978W WO03019668A1 WO 2003019668 A1 WO2003019668 A1 WO 2003019668A1 FR 0202978 W FR0202978 W FR 0202978W WO 03019668 A1 WO03019668 A1 WO 03019668A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- photosensitive
- zones
- conductive
- layers
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000007707 calorimetry Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 79
- 239000010703 silicon Substances 0.000 claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 238000001514 detection method Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000012546 transfer Methods 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000011159 matrix material Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 7
- 230000010070 molecular adhesion Effects 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008030 elimination Effects 0.000 claims description 2
- 238000003379 elimination reaction Methods 0.000 claims description 2
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 98
- 235000012431 wafers Nutrition 0.000 description 96
- 238000002513 implantation Methods 0.000 description 13
- 238000005520 cutting process Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000004737 colorimetric analysis Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010028 chemical finishing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14667—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60223052T DE60223052T2 (de) | 2001-08-31 | 2002-08-30 | Farbbildsensor mit verbesserter kalorimetrie und verfahren zu seiner herstellung |
US10/485,695 US7217590B2 (en) | 2001-08-31 | 2002-08-30 | Color image sensor with enhanced colorimetry and method for making same |
EP02796332A EP1421623B1 (fr) | 2001-08-31 | 2002-08-30 | Capteur d'image couleur a colorimetrie amelioree et procede de fabrication |
JP2003523014A JP4064347B2 (ja) | 2001-08-31 | 2002-08-30 | 測色の向上したカラー画像センサ及びその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0111334A FR2829289B1 (fr) | 2001-08-31 | 2001-08-31 | Capteur d'image couleur a colorimetrie amelioree et procede de fabrication |
FR01/11334 | 2001-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003019668A1 true WO2003019668A1 (fr) | 2003-03-06 |
Family
ID=8866877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2002/002978 WO2003019668A1 (fr) | 2001-08-31 | 2002-08-30 | Capteur d'image couleur a colorimetrie amelioree et procede de fabrication |
Country Status (6)
Country | Link |
---|---|
US (1) | US7217590B2 (fr) |
EP (1) | EP1421623B1 (fr) |
JP (1) | JP4064347B2 (fr) |
DE (1) | DE60223052T2 (fr) |
FR (1) | FR2829289B1 (fr) |
WO (1) | WO2003019668A1 (fr) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006032561A (ja) * | 2004-07-14 | 2006-02-02 | Sony Corp | 半導体イメージセンサ・モジュール |
JP2007013089A (ja) * | 2005-06-02 | 2007-01-18 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2009071308A (ja) * | 2007-09-10 | 2009-04-02 | Dongbu Hitek Co Ltd | イメージセンサの製造方法 |
JP2011077555A (ja) * | 2011-01-05 | 2011-04-14 | Sony Corp | 半導体イメージセンサ・モジュールおよび半導体イメージセンサ・モジュールの製造方法 |
JP2011077554A (ja) * | 2011-01-05 | 2011-04-14 | Sony Corp | 半導体イメージセンサ・モジュールおよび半導体イメージセンサ・モジュールの製造方法 |
JP2011077553A (ja) * | 2011-01-05 | 2011-04-14 | Sony Corp | 半導体イメージセンサ・モジュールおよび半導体イメージセンサ・モジュールの製造方法 |
JP2011142330A (ja) * | 2011-02-09 | 2011-07-21 | Sony Corp | 固体撮像素子、カメラモジュール及び電子機器モジュール |
US8154098B2 (en) | 2009-11-20 | 2012-04-10 | Hynix Semiconductor Inc. | Reverse image sensor module and method for manufacturing the same |
US8309392B2 (en) | 2005-03-07 | 2012-11-13 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2863773B1 (fr) * | 2003-12-12 | 2006-05-19 | Atmel Grenoble Sa | Procede de fabrication de puces electroniques en silicium aminci |
FR2880194B1 (fr) * | 2004-12-24 | 2007-06-01 | Atmel Grenoble Soc Par Actions | Capteur d'image a zones de couleur globalement separees |
JP4486043B2 (ja) * | 2004-12-30 | 2010-06-23 | 東部エレクトロニクス株式会社 | Cmosイメージセンサー及びその製造方法 |
KR100672994B1 (ko) * | 2005-01-28 | 2007-01-24 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
JP4641820B2 (ja) * | 2005-02-17 | 2011-03-02 | 三洋電機株式会社 | 半導体装置の製造方法 |
KR100866718B1 (ko) * | 2005-06-17 | 2008-11-05 | 도판 인사츠 가부시키가이샤 | 촬상 소자 |
US7586139B2 (en) * | 2006-02-17 | 2009-09-08 | International Business Machines Corporation | Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor |
US7709872B2 (en) * | 2006-09-13 | 2010-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for fabricating image sensor devices |
JP5159192B2 (ja) * | 2007-07-06 | 2013-03-06 | 株式会社東芝 | 半導体装置の製造方法 |
DE102009000001B4 (de) | 2009-01-02 | 2019-01-24 | Robert Bosch Gmbh | Bildsensor und Verfahren zur Herstellung eines Bildsensors |
JP2010177391A (ja) * | 2009-01-29 | 2010-08-12 | Sony Corp | 固体撮像装置、電子機器、固体撮像装置の製造方法 |
US9419156B2 (en) | 2013-08-30 | 2016-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package and method for integration of heterogeneous integrated circuits |
US9099623B2 (en) | 2013-08-30 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Manufacture including substrate and package structure of optical chip |
WO2017141103A1 (fr) * | 2016-02-16 | 2017-08-24 | G-Ray Switzerland Sa | Structures, systèmes et procédés de transport de charges électriques au travers d'interfaces par jonction |
JP2017183407A (ja) * | 2016-03-29 | 2017-10-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10250258B2 (en) * | 2016-09-28 | 2019-04-02 | Nxp B.V. | Device and method for detecting semiconductor substrate thickness |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5244817A (en) * | 1992-08-03 | 1993-09-14 | Eastman Kodak Company | Method of making backside illuminated image sensors |
US5274250A (en) * | 1991-07-12 | 1993-12-28 | Fuji Xerox Co., Ltd. | Color image sensor with light-shielding layer |
US5568574A (en) * | 1995-06-12 | 1996-10-22 | University Of Southern California | Modulator-based photonic chip-to-chip interconnections for dense three-dimensional multichip module integration |
US6091194A (en) * | 1995-11-22 | 2000-07-18 | Motorola, Inc. | Active matrix display |
US6257491B1 (en) * | 1993-10-25 | 2001-07-10 | Symbol Technologies, Inc. | Packaged mirror including mirror travel stops |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2501943B1 (fr) * | 1981-03-13 | 1986-01-17 | Thomson Csf | Dispositif photosensible solide a deux dimensions et dispositif d'analyse d'image, utilisant le transfert de charges electriques, comportant un tel dispositif |
US6252220B1 (en) * | 1999-04-26 | 2001-06-26 | Xerox Corporation | Sensor cover glass with infrared filter |
-
2001
- 2001-08-31 FR FR0111334A patent/FR2829289B1/fr not_active Expired - Fee Related
-
2002
- 2002-08-30 EP EP02796332A patent/EP1421623B1/fr not_active Expired - Fee Related
- 2002-08-30 US US10/485,695 patent/US7217590B2/en not_active Expired - Lifetime
- 2002-08-30 JP JP2003523014A patent/JP4064347B2/ja not_active Expired - Fee Related
- 2002-08-30 WO PCT/FR2002/002978 patent/WO2003019668A1/fr active IP Right Grant
- 2002-08-30 DE DE60223052T patent/DE60223052T2/de not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5274250A (en) * | 1991-07-12 | 1993-12-28 | Fuji Xerox Co., Ltd. | Color image sensor with light-shielding layer |
US5244817A (en) * | 1992-08-03 | 1993-09-14 | Eastman Kodak Company | Method of making backside illuminated image sensors |
US6257491B1 (en) * | 1993-10-25 | 2001-07-10 | Symbol Technologies, Inc. | Packaged mirror including mirror travel stops |
US5568574A (en) * | 1995-06-12 | 1996-10-22 | University Of Southern California | Modulator-based photonic chip-to-chip interconnections for dense three-dimensional multichip module integration |
US6091194A (en) * | 1995-11-22 | 2000-07-18 | Motorola, Inc. | Active matrix display |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4720120B2 (ja) * | 2004-07-14 | 2011-07-13 | ソニー株式会社 | 半導体イメージセンサ・モジュール |
JP2006032561A (ja) * | 2004-07-14 | 2006-02-02 | Sony Corp | 半導体イメージセンサ・モジュール |
US8309392B2 (en) | 2005-03-07 | 2012-11-13 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
US8440499B2 (en) | 2005-03-07 | 2013-05-14 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
US8841743B2 (en) | 2005-03-07 | 2014-09-23 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
US9117710B2 (en) | 2005-03-07 | 2015-08-25 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
US9673249B2 (en) | 2005-03-07 | 2017-06-06 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
JP2007013089A (ja) * | 2005-06-02 | 2007-01-18 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2009071308A (ja) * | 2007-09-10 | 2009-04-02 | Dongbu Hitek Co Ltd | イメージセンサの製造方法 |
US8154098B2 (en) | 2009-11-20 | 2012-04-10 | Hynix Semiconductor Inc. | Reverse image sensor module and method for manufacturing the same |
US8383447B2 (en) | 2009-11-20 | 2013-02-26 | Hynix Semiconductor Inc. | Reverse image sensor module and method for manufacturing the same |
JP2011077555A (ja) * | 2011-01-05 | 2011-04-14 | Sony Corp | 半導体イメージセンサ・モジュールおよび半導体イメージセンサ・モジュールの製造方法 |
JP2011077554A (ja) * | 2011-01-05 | 2011-04-14 | Sony Corp | 半導体イメージセンサ・モジュールおよび半導体イメージセンサ・モジュールの製造方法 |
JP2011077553A (ja) * | 2011-01-05 | 2011-04-14 | Sony Corp | 半導体イメージセンサ・モジュールおよび半導体イメージセンサ・モジュールの製造方法 |
JP2011142330A (ja) * | 2011-02-09 | 2011-07-21 | Sony Corp | 固体撮像素子、カメラモジュール及び電子機器モジュール |
Also Published As
Publication number | Publication date |
---|---|
DE60223052T2 (de) | 2008-07-24 |
US7217590B2 (en) | 2007-05-15 |
JP2005501421A (ja) | 2005-01-13 |
EP1421623A1 (fr) | 2004-05-26 |
EP1421623B1 (fr) | 2007-10-17 |
JP4064347B2 (ja) | 2008-03-19 |
DE60223052D1 (de) | 2007-11-29 |
FR2829289A1 (fr) | 2003-03-07 |
US20040251477A1 (en) | 2004-12-16 |
FR2829289B1 (fr) | 2004-11-19 |
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