WO2003009349A3 - Methods and compositions for chemical mechanical polishing substrates covered with at least two dielectric materials - Google Patents
Methods and compositions for chemical mechanical polishing substrates covered with at least two dielectric materials Download PDFInfo
- Publication number
- WO2003009349A3 WO2003009349A3 PCT/US2002/022587 US0222587W WO03009349A3 WO 2003009349 A3 WO2003009349 A3 WO 2003009349A3 US 0222587 W US0222587 W US 0222587W WO 03009349 A3 WO03009349 A3 WO 03009349A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- compositions
- methods
- mechanical polishing
- chemical mechanical
- dielectric materials
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
Abstract
Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate including positioning a substrate comprising at least first dielectric material and second dielectric material disposed thereon in a polishing apparatus, polishing the substrate with a first polishing composition having a first selectivity, and polishing the substrate with a second polishing composition having a second selectivity greater than the first selectivity.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30572101P | 2001-07-16 | 2001-07-16 | |
US60/305,721 | 2001-07-16 | ||
US32506301P | 2001-09-26 | 2001-09-26 | |
US60/325,063 | 2001-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003009349A2 WO2003009349A2 (en) | 2003-01-30 |
WO2003009349A3 true WO2003009349A3 (en) | 2003-10-16 |
Family
ID=26974747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/022587 WO2003009349A2 (en) | 2001-07-16 | 2002-07-16 | Methods and compositions for chemical mechanical polishing substrates covered with at least two dielectric materials |
Country Status (3)
Country | Link |
---|---|
US (1) | US6811470B2 (en) |
TW (1) | TWI241228B (en) |
WO (1) | WO2003009349A2 (en) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7104869B2 (en) * | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
US7008554B2 (en) * | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
US6821881B2 (en) * | 2001-07-25 | 2004-11-23 | Applied Materials, Inc. | Method for chemical mechanical polishing of semiconductor substrates |
US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
US6884144B2 (en) * | 2002-08-16 | 2005-04-26 | Micron Technology, Inc. | Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers |
TWI295950B (en) | 2002-10-03 | 2008-04-21 | Applied Materials Inc | Method for reducing delamination during chemical mechanical polishing |
US7063597B2 (en) * | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
JP4707311B2 (en) * | 2003-08-08 | 2011-06-22 | 花王株式会社 | Magnetic disk substrate |
US20050054277A1 (en) * | 2003-09-04 | 2005-03-10 | Teng-Chun Tsai | Polishing pad and method of polishing wafer |
US7040965B2 (en) * | 2003-09-18 | 2006-05-09 | Micron Technology, Inc. | Methods for removing doped silicon material from microfeature workpieces |
US6997788B2 (en) * | 2003-10-01 | 2006-02-14 | Mosel Vitelic, Inc. | Multi-tool, multi-slurry chemical mechanical polishing |
USPP17182P3 (en) * | 2003-10-02 | 2006-11-07 | Plantas De Navarra S.A. | Peach tree plant named ‘Plawhite 5’ |
US7314578B2 (en) * | 2003-12-12 | 2008-01-01 | Samsung Electronics Co., Ltd. | Slurry compositions and CMP methods using the same |
KR100640600B1 (en) * | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | Slurry compositions, and fabrication method of semiconductor device including CMPchemical mechanical polishing process using the same |
US20050148289A1 (en) * | 2004-01-06 | 2005-07-07 | Cabot Microelectronics Corp. | Micromachining by chemical mechanical polishing |
US20060021974A1 (en) * | 2004-01-29 | 2006-02-02 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7390744B2 (en) * | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7390748B2 (en) * | 2004-08-05 | 2008-06-24 | International Business Machines Corporation | Method of forming a polishing inhibiting layer using a slurry having an additive |
US20060088976A1 (en) * | 2004-10-22 | 2006-04-27 | Applied Materials, Inc. | Methods and compositions for chemical mechanical polishing substrates |
US20060097219A1 (en) * | 2004-11-08 | 2006-05-11 | Applied Materials, Inc. | High selectivity slurry compositions for chemical mechanical polishing |
US20060157450A1 (en) * | 2005-01-20 | 2006-07-20 | Hsin-Kun Chu | Method for improving hss cmp performance |
US20060169674A1 (en) * | 2005-01-28 | 2006-08-03 | Daxin Mao | Method and composition for polishing a substrate |
US20060196778A1 (en) * | 2005-01-28 | 2006-09-07 | Renhe Jia | Tungsten electroprocessing |
TWI421931B (en) * | 2005-04-28 | 2014-01-01 | Advanced Tech Materials | Method of passivating chemical mechanical polishing compositions for copper film planarization processes |
US20060252267A1 (en) * | 2005-05-06 | 2006-11-09 | Wang Wai S | Topology-selective oxide CMP |
US7264539B2 (en) * | 2005-07-13 | 2007-09-04 | Micron Technology, Inc. | Systems and methods for removing microfeature workpiece surface defects |
TW200720017A (en) * | 2005-09-19 | 2007-06-01 | Rohm & Haas Elect Mat | Water-based polishing pads having improved adhesion properties and methods of manufacture |
KR100693789B1 (en) * | 2005-10-18 | 2007-03-12 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
US7544618B2 (en) * | 2006-05-18 | 2009-06-09 | Macronix International Co., Ltd. | Two-step chemical mechanical polishing process |
KR100835406B1 (en) * | 2006-11-09 | 2008-06-04 | 동부일렉트로닉스 주식회사 | Method for manufacturing iso layer of semiconductor device |
WO2008095078A1 (en) * | 2007-01-31 | 2008-08-07 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
US20080242198A1 (en) * | 2007-03-26 | 2008-10-02 | United Microelectronics Corp. | Multi-step planarizing and polishing method |
TWI446425B (en) * | 2007-08-29 | 2014-07-21 | Applied Materials Inc | High throughput low topography copper cmp process |
US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5395801A (en) * | 1993-09-29 | 1995-03-07 | Micron Semiconductor, Inc. | Chemical-mechanical polishing processes of planarizing insulating layers |
WO1999046081A1 (en) * | 1998-03-11 | 1999-09-16 | Strasbaugh | Multi-step chemical mechanical polishing process and device |
US5981394A (en) * | 1996-09-30 | 1999-11-09 | Kabushiki Kaisha Toshiba | Chemical mechanical polishing method, polisher used in chemical mechanical polishing and method of manufacturing semiconductor device |
WO2000002235A1 (en) * | 1998-07-06 | 2000-01-13 | Strasbaugh | Method of planarizing integrated circuits |
JP2000068371A (en) * | 1998-08-26 | 2000-03-03 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JP2000156360A (en) * | 1998-06-30 | 2000-06-06 | Fujitsu Ltd | Manufacture of semiconductor device |
US6114249A (en) * | 1998-03-10 | 2000-09-05 | International Business Machines Corporation | Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity |
EP1061111A1 (en) * | 1998-02-24 | 2000-12-20 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same |
EP1068928A2 (en) * | 1999-02-11 | 2001-01-17 | Applied Materials, Inc. | Chemical mechanical polishing processes and components |
US20010036738A1 (en) * | 1998-06-30 | 2001-11-01 | Masanobu Hatanaka | Semiconductor device manufacturing method |
Family Cites Families (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4169337A (en) | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
US4588421A (en) | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
US4752628A (en) | 1987-05-15 | 1988-06-21 | Nalco Chemical Company | Concentrated lapping slurries |
US5152917B1 (en) | 1991-02-06 | 1998-01-13 | Minnesota Mining & Mfg | Structured abrasive article |
US5378251A (en) | 1991-02-06 | 1995-01-03 | Minnesota Mining And Manufacturing Company | Abrasive articles and methods of making and using same |
US5244534A (en) | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
JP3649442B2 (en) | 1992-12-17 | 2005-05-18 | ミネソタ・マイニング・アンド・マニュファクチュアリング・カンパニー | Reduced viscosity slurry, abrasive article made therefrom, and method for producing the article |
US5342419A (en) | 1992-12-31 | 1994-08-30 | Minnesota Mining And Manufacturing Company | Abrasive composites having a controlled rate of erosion, articles incorporating same, and methods of making and using same |
US5656097A (en) | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
US5453312A (en) | 1993-10-29 | 1995-09-26 | Minnesota Mining And Manufacturing Company | Abrasive article, a process for its manufacture, and a method of using it to reduce a workpiece surface |
US5340370A (en) | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
US5795495A (en) * | 1994-04-25 | 1998-08-18 | Micron Technology, Inc. | Method of chemical mechanical polishing for dielectric layers |
JP3397501B2 (en) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | Abrasive and polishing method |
TW274625B (en) | 1994-09-30 | 1996-04-21 | Hitachi Seisakusyo Kk | |
US5996594A (en) | 1994-11-30 | 1999-12-07 | Texas Instruments Incorporated | Post-chemical mechanical planarization clean-up process using post-polish scrubbing |
US5614444A (en) | 1995-06-06 | 1997-03-25 | Sematech, Inc. | Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
JP3311203B2 (en) | 1995-06-13 | 2002-08-05 | 株式会社東芝 | Semiconductor device manufacturing method, semiconductor manufacturing apparatus, and chemical mechanical polishing method for semiconductor wafer |
US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
US5738574A (en) | 1995-10-27 | 1998-04-14 | Applied Materials, Inc. | Continuous processing system for chemical mechanical polishing |
US5769689A (en) | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
US5893754A (en) | 1996-05-21 | 1999-04-13 | Micron Technology, Inc. | Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
US5827781A (en) | 1996-07-17 | 1998-10-27 | Micron Technology, Inc. | Planarization slurry including a dispersant and method of using same |
US5916819A (en) | 1996-07-17 | 1999-06-29 | Micron Technology, Inc. | Planarization fluid composition chelating agents and planarization method using same |
US5692950A (en) | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
US5932486A (en) | 1996-08-16 | 1999-08-03 | Rodel, Inc. | Apparatus and methods for recirculating chemical-mechanical polishing of semiconductor wafers |
US6039891A (en) | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
AU4323197A (en) | 1996-09-30 | 1998-04-24 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive and method of abrading substrates |
US5968239A (en) | 1996-11-12 | 1999-10-19 | Kabushiki Kaisha Toshiba | Polishing slurry |
US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
TW426556B (en) | 1997-01-24 | 2001-03-21 | United Microelectronics Corp | Method of cleaning slurry remnants left on a chemical-mechanical polish machine |
JPH10213959A (en) | 1997-01-30 | 1998-08-11 | Konica Corp | Developer replenishment device and image forming device |
US5922136A (en) | 1997-03-28 | 1999-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-CMP cleaner apparatus and method |
US5817567A (en) | 1997-04-07 | 1998-10-06 | Taiwan Semiconductor Manufacturing Company Ltd. | Shallow trench isolation method |
JP3359535B2 (en) | 1997-04-25 | 2002-12-24 | 三井金属鉱業株式会社 | Method for manufacturing semiconductor device |
ATE445230T1 (en) | 1997-04-30 | 2009-10-15 | Minnesota Mining & Mfg | METHOD FOR PLANARIZING THE SURFACE OF A SEMICONDUCTOR WAFER |
US6062952A (en) * | 1997-06-05 | 2000-05-16 | Robinson; Karl M. | Planarization process with abrasive polishing slurry that is selective to a planarized surface |
US6099604A (en) | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
JPH11111656A (en) | 1997-09-30 | 1999-04-23 | Nec Corp | Manufacture of semiconductor device |
US6294105B1 (en) | 1997-12-23 | 2001-09-25 | International Business Machines Corporation | Chemical mechanical polishing slurry and method for polishing metal/oxide layers |
US6019806A (en) | 1998-01-08 | 2000-02-01 | Sees; Jennifer A. | High selectivity slurry for shallow trench isolation processing |
US6143663A (en) | 1998-01-22 | 2000-11-07 | Cypress Semiconductor Corporation | Employing deionized water and an abrasive surface to polish a semiconductor topography |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6091131A (en) | 1998-04-28 | 2000-07-18 | International Business Machines Corporation | Integrated circuit having crack stop for interlevel dielectric layers |
US6271047B1 (en) * | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
US6162368A (en) | 1998-06-13 | 2000-12-19 | Applied Materials, Inc. | Technique for chemical mechanical polishing silicon |
JP3998813B2 (en) | 1998-06-15 | 2007-10-31 | 株式会社フジミインコーポレーテッド | Polishing composition |
US6063306A (en) | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
JP2000080350A (en) | 1998-09-07 | 2000-03-21 | Speedfam-Ipec Co Ltd | Abrasive composition and polishing method using same |
US6149830A (en) | 1998-09-17 | 2000-11-21 | Siemens Aktiengesellschaft | Composition and method for reducing dishing in patterned metal during CMP process |
US6206756B1 (en) | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6276996B1 (en) | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
JP2002530861A (en) | 1998-11-18 | 2002-09-17 | ロデール ホールディングス インコーポレイテッド | Method for reducing dishing speed during CMP in metal semiconductor structure |
US6046112A (en) | 1998-12-14 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Chemical mechanical polishing slurry |
WO2000036037A1 (en) | 1998-12-17 | 2000-06-22 | Rodel Holdings, Inc. | Compositions and methods for polishing semiconductor wafers |
GB9903880D0 (en) | 1999-02-19 | 1999-04-14 | Univ Southampton | Optical device |
WO2000056391A1 (en) | 1999-03-25 | 2000-09-28 | Arteria Medical Science, Inc. | Device and method of guide wire balloon inflation and deflation to prevent cerebral embolization during carotid stenting |
US6234875B1 (en) | 1999-06-09 | 2001-05-22 | 3M Innovative Properties Company | Method of modifying a surface |
US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
US6258721B1 (en) | 1999-12-27 | 2001-07-10 | General Electric Company | Diamond slurry for chemical-mechanical planarization of semiconductor wafers |
US6783432B2 (en) * | 2001-06-04 | 2004-08-31 | Applied Materials Inc. | Additives for pressure sensitive polishing compositions |
-
2002
- 2002-07-12 US US10/194,560 patent/US6811470B2/en not_active Expired - Lifetime
- 2002-07-16 TW TW091115886A patent/TWI241228B/en not_active IP Right Cessation
- 2002-07-16 WO PCT/US2002/022587 patent/WO2003009349A2/en not_active Application Discontinuation
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5395801A (en) * | 1993-09-29 | 1995-03-07 | Micron Semiconductor, Inc. | Chemical-mechanical polishing processes of planarizing insulating layers |
US5981394A (en) * | 1996-09-30 | 1999-11-09 | Kabushiki Kaisha Toshiba | Chemical mechanical polishing method, polisher used in chemical mechanical polishing and method of manufacturing semiconductor device |
EP1061111A1 (en) * | 1998-02-24 | 2000-12-20 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same |
US6114249A (en) * | 1998-03-10 | 2000-09-05 | International Business Machines Corporation | Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity |
WO1999046081A1 (en) * | 1998-03-11 | 1999-09-16 | Strasbaugh | Multi-step chemical mechanical polishing process and device |
JP2000156360A (en) * | 1998-06-30 | 2000-06-06 | Fujitsu Ltd | Manufacture of semiconductor device |
US20010036738A1 (en) * | 1998-06-30 | 2001-11-01 | Masanobu Hatanaka | Semiconductor device manufacturing method |
WO2000002235A1 (en) * | 1998-07-06 | 2000-01-13 | Strasbaugh | Method of planarizing integrated circuits |
JP2000068371A (en) * | 1998-08-26 | 2000-03-03 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
EP1068928A2 (en) * | 1999-02-11 | 2001-01-17 | Applied Materials, Inc. | Chemical mechanical polishing processes and components |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 06 22 September 2000 (2000-09-22) * |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09 13 October 2000 (2000-10-13) * |
Also Published As
Publication number | Publication date |
---|---|
TWI241228B (en) | 2005-10-11 |
US6811470B2 (en) | 2004-11-02 |
WO2003009349A2 (en) | 2003-01-30 |
US20030036339A1 (en) | 2003-02-20 |
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