WO2003001581A3 - Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate - Google Patents
Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate Download PDFInfo
- Publication number
- WO2003001581A3 WO2003001581A3 PCT/US2002/019495 US0219495W WO03001581A3 WO 2003001581 A3 WO2003001581 A3 WO 2003001581A3 US 0219495 W US0219495 W US 0219495W WO 03001581 A3 WO03001581 A3 WO 03001581A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductive material
- microelectronic substrate
- electrical
- mechanical
- methods
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037016758A KR100663662B1 (en) | 2001-06-21 | 2002-06-20 | Method and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
JP2003507878A JP4446271B2 (en) | 2001-06-21 | 2002-06-20 | Method and apparatus for electrically, mechanically and / or chemically removing a conductive material from a microelectronic substrate |
EP02744464A EP1399956A2 (en) | 2001-06-21 | 2002-06-20 | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/888,084 US7112121B2 (en) | 2000-08-30 | 2001-06-21 | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
US09/887,767 US7094131B2 (en) | 2000-08-30 | 2001-06-21 | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
US09/887,767 | 2001-06-21 | ||
US09/888,084 | 2001-06-21 | ||
US09/888,002 US7160176B2 (en) | 2000-08-30 | 2001-06-21 | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
US09/888,002 | 2001-06-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003001581A2 WO2003001581A2 (en) | 2003-01-03 |
WO2003001581A3 true WO2003001581A3 (en) | 2003-10-30 |
Family
ID=27420529
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/019496 WO2003001582A2 (en) | 2001-06-21 | 2002-06-20 | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
PCT/US2002/019495 WO2003001581A2 (en) | 2001-06-21 | 2002-06-20 | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/019496 WO2003001582A2 (en) | 2001-06-21 | 2002-06-20 | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
Country Status (6)
Country | Link |
---|---|
EP (2) | EP1399957A2 (en) |
JP (2) | JP4446271B2 (en) |
KR (2) | KR100598477B1 (en) |
CN (1) | CN100356523C (en) |
AU (1) | AU2002316303A1 (en) |
WO (2) | WO2003001582A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6848970B2 (en) | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
US6837983B2 (en) * | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
US7842169B2 (en) | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
US7998335B2 (en) | 2005-06-13 | 2011-08-16 | Cabot Microelectronics Corporation | Controlled electrochemical polishing method |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
US6033953A (en) * | 1996-12-27 | 2000-03-07 | Texas Instruments Incorporated | Method for manufacturing dielectric capacitor, dielectric memory device |
US6143155A (en) * | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
US6171467B1 (en) * | 1997-11-25 | 2001-01-09 | The John Hopkins University | Electrochemical-control of abrasive polishing and machining rates |
JP2001077117A (en) * | 1999-09-07 | 2001-03-23 | Sony Corp | Manufacture of semiconductor device, and method and device for polishing |
US20010036746A1 (en) * | 2000-03-09 | 2001-11-01 | Shuzo Sato | Methods of producing and polishing semiconductor device and polishing apparatus |
US20020052126A1 (en) * | 2000-08-31 | 2002-05-02 | Whonchee Lee | Electro-mechanical polishing of platinum container structure |
US20020070126A1 (en) * | 2000-09-19 | 2002-06-13 | Shuzo Sato | Polishing method, polishing apparatus, plating method, and plating apparatus |
WO2002064314A1 (en) * | 2001-02-12 | 2002-08-22 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01241129A (en) * | 1988-03-23 | 1989-09-26 | Toshiba Corp | Manufacture of semiconductor device |
KR960006714B1 (en) * | 1990-05-28 | 1996-05-22 | 가부시끼가이샤 도시바 | Semiconductor device fabrication process |
KR100280107B1 (en) * | 1998-05-07 | 2001-03-02 | 윤종용 | How to form trench isolation |
US6121152A (en) * | 1998-06-11 | 2000-09-19 | Integrated Process Equipment Corporation | Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly |
-
2002
- 2002-06-20 CN CNB028122380A patent/CN100356523C/en not_active Expired - Fee Related
- 2002-06-20 EP EP02746596A patent/EP1399957A2/en not_active Withdrawn
- 2002-06-20 EP EP02744464A patent/EP1399956A2/en not_active Withdrawn
- 2002-06-20 KR KR1020037016756A patent/KR100598477B1/en not_active IP Right Cessation
- 2002-06-20 WO PCT/US2002/019496 patent/WO2003001582A2/en active Application Filing
- 2002-06-20 WO PCT/US2002/019495 patent/WO2003001581A2/en active Application Filing
- 2002-06-20 JP JP2003507878A patent/JP4446271B2/en not_active Expired - Fee Related
- 2002-06-20 KR KR1020037016758A patent/KR100663662B1/en not_active IP Right Cessation
- 2002-06-20 AU AU2002316303A patent/AU2002316303A1/en not_active Abandoned
- 2002-06-20 JP JP2003507879A patent/JP2004531899A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6033953A (en) * | 1996-12-27 | 2000-03-07 | Texas Instruments Incorporated | Method for manufacturing dielectric capacitor, dielectric memory device |
US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
US6171467B1 (en) * | 1997-11-25 | 2001-01-09 | The John Hopkins University | Electrochemical-control of abrasive polishing and machining rates |
US6143155A (en) * | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
JP2001077117A (en) * | 1999-09-07 | 2001-03-23 | Sony Corp | Manufacture of semiconductor device, and method and device for polishing |
US20010036746A1 (en) * | 2000-03-09 | 2001-11-01 | Shuzo Sato | Methods of producing and polishing semiconductor device and polishing apparatus |
US20020052126A1 (en) * | 2000-08-31 | 2002-05-02 | Whonchee Lee | Electro-mechanical polishing of platinum container structure |
US20020070126A1 (en) * | 2000-09-19 | 2002-06-13 | Shuzo Sato | Polishing method, polishing apparatus, plating method, and plating apparatus |
WO2002064314A1 (en) * | 2001-02-12 | 2002-08-22 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 20 10 July 2001 (2001-07-10) * |
Also Published As
Publication number | Publication date |
---|---|
JP2004531649A (en) | 2004-10-14 |
CN1516894A (en) | 2004-07-28 |
EP1399957A2 (en) | 2004-03-24 |
CN100356523C (en) | 2007-12-19 |
KR20040021616A (en) | 2004-03-10 |
WO2003001581A2 (en) | 2003-01-03 |
WO2003001582A3 (en) | 2003-10-30 |
KR100663662B1 (en) | 2007-01-03 |
KR100598477B1 (en) | 2006-07-11 |
KR20040010773A (en) | 2004-01-31 |
JP2004531899A (en) | 2004-10-14 |
WO2003001582A2 (en) | 2003-01-03 |
JP4446271B2 (en) | 2010-04-07 |
EP1399956A2 (en) | 2004-03-24 |
AU2002316303A1 (en) | 2003-01-08 |
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