WO2002103703A3 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
WO2002103703A3
WO2002103703A3 PCT/EP2002/006495 EP0206495W WO02103703A3 WO 2002103703 A3 WO2002103703 A3 WO 2002103703A3 EP 0206495 W EP0206495 W EP 0206495W WO 02103703 A3 WO02103703 A3 WO 02103703A3
Authority
WO
WIPO (PCT)
Prior art keywords
drain
source
electrical charge
semiconductor device
gate
Prior art date
Application number
PCT/EP2002/006495
Other languages
French (fr)
Other versions
WO2002103703A2 (en
Inventor
Pierre Christophe Fazan
Serguei Okhonin
Original Assignee
Innovative Silicon Sa
Ecole Polytech
Pierre Christophe Fazan
Serguei Okhonin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP01810587A external-priority patent/EP1271547A1/en
Priority claimed from EP02405247A external-priority patent/EP1351307A1/en
Priority claimed from EP02405315A external-priority patent/EP1355357A1/en
Priority to AU2002316979A priority Critical patent/AU2002316979A1/en
Priority to EP02745383A priority patent/EP1405314A2/en
Application filed by Innovative Silicon Sa, Ecole Polytech, Pierre Christophe Fazan, Serguei Okhonin filed Critical Innovative Silicon Sa
Priority to JP2003505932A priority patent/JP2004535669A/en
Priority to US10/450,238 priority patent/US6969662B2/en
Publication of WO2002103703A2 publication Critical patent/WO2002103703A2/en
Priority to US10/694,689 priority patent/US6937516B2/en
Priority to US10/724,648 priority patent/US6930918B2/en
Priority to US10/741,804 priority patent/US6934186B2/en
Publication of WO2002103703A3 publication Critical patent/WO2002103703A3/en
Priority to US11/132,979 priority patent/US7239549B2/en
Priority to US11/201,483 priority patent/US7280399B2/en
Priority to US11/904,978 priority patent/US20080165577A1/en
Priority to US11/904,977 priority patent/US20080068882A1/en
Priority to US11/975,862 priority patent/US7541616B2/en
Priority to US11/977,705 priority patent/US7732816B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/905—Plural dram cells share common contact or common trench
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/907—Folded bit line dram configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/982—Varying orientation of devices in array

Abstract

A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate 13. Each of the data storage cells includes a field effect transistor having a source 18, drain 22 and gate 28, and a body arranged between the source and drain for storing electrical charge generated in the body. The magnitude of the net electrical charge in the body 22 can be adjusted by input signals applied to the transistor, and the adjustment of the net electrical charge by the input signals can be at least partially cancelled by applying electrical voltage signals between the gate 28 and the drain 22 and between the source 18 and the drain 22.
PCT/EP2002/006495 2001-06-18 2002-06-05 Semiconductor device WO2002103703A2 (en)

Priority Applications (13)

Application Number Priority Date Filing Date Title
US10/450,238 US6969662B2 (en) 2001-06-18 2002-06-05 Semiconductor device
JP2003505932A JP2004535669A (en) 2001-06-18 2002-06-05 Semiconductor element
AU2002316979A AU2002316979A1 (en) 2001-06-18 2002-06-05 Semiconductor device
EP02745383A EP1405314A2 (en) 2001-06-18 2002-06-05 Semiconductor device
US10/694,689 US6937516B2 (en) 2001-06-18 2003-10-28 Semiconductor device
US10/724,648 US6930918B2 (en) 2001-06-18 2003-12-01 Semiconductor device
US10/741,804 US6934186B2 (en) 2001-06-18 2003-12-19 Semiconductor device
US11/132,979 US7239549B2 (en) 2001-06-18 2005-05-19 Semiconductor device
US11/201,483 US7280399B2 (en) 2001-06-18 2005-08-11 Semiconductor device
US11/904,977 US20080068882A1 (en) 2001-06-18 2007-09-28 Semiconductor device
US11/904,978 US20080165577A1 (en) 2001-06-18 2007-09-28 Semiconductor device
US11/975,862 US7541616B2 (en) 2001-06-18 2007-10-22 Semiconductor device
US11/977,705 US7732816B2 (en) 2001-06-18 2007-10-25 Semiconductor device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
EP01810587.4 2001-06-18
EP01810587A EP1271547A1 (en) 2001-06-18 2001-06-18 Semiconductor device and DRAM
EP02405247A EP1351307A1 (en) 2002-03-28 2002-03-28 Method of driving a semiconductor device
EP02405247.4 2002-03-28
EP02405315A EP1355357A1 (en) 2002-04-18 2002-04-18 Electrical charge carrier semiconductor device
EP02405315.9 2002-04-18

Related Child Applications (9)

Application Number Title Priority Date Filing Date
US10450238 A-371-Of-International 2002-06-05
US10/450,238 A-371-Of-International US6969662B2 (en) 2001-06-18 2002-06-05 Semiconductor device
US10/694,689 Division US6937516B2 (en) 2001-06-18 2003-10-28 Semiconductor device
US10/724,377 Division US6925006B2 (en) 2001-06-18 2003-11-28 Semiconductor device
US10/724,648 Division US6930918B2 (en) 2001-06-18 2003-12-01 Semiconductor device
US10/727,742 Division US6873539B1 (en) 2001-06-18 2003-12-04 Semiconductor device
US10/741,804 Division US6934186B2 (en) 2001-06-18 2003-12-19 Semiconductor device
US11/132,979 Division US7239549B2 (en) 2001-06-18 2005-05-19 Semiconductor device
US11/201,483 Division US7280399B2 (en) 2001-06-18 2005-08-11 Semiconductor device

Publications (2)

Publication Number Publication Date
WO2002103703A2 WO2002103703A2 (en) 2002-12-27
WO2002103703A3 true WO2002103703A3 (en) 2004-01-29

Family

ID=27224405

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/006495 WO2002103703A2 (en) 2001-06-18 2002-06-05 Semiconductor device

Country Status (6)

Country Link
US (12) US6969662B2 (en)
EP (1) EP1405314A2 (en)
JP (1) JP2004535669A (en)
AU (1) AU2002316979A1 (en)
TW (1) TWI230392B (en)
WO (1) WO2002103703A2 (en)

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