WO2002099517A3 - Microelectronic photonic structure and device and method of forming the same - Google Patents

Microelectronic photonic structure and device and method of forming the same Download PDF

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Publication number
WO2002099517A3
WO2002099517A3 PCT/US2002/017711 US0217711W WO02099517A3 WO 2002099517 A3 WO2002099517 A3 WO 2002099517A3 US 0217711 W US0217711 W US 0217711W WO 02099517 A3 WO02099517 A3 WO 02099517A3
Authority
WO
WIPO (PCT)
Prior art keywords
microelectronic
forming
same
photonic structure
photonic
Prior art date
Application number
PCT/US2002/017711
Other languages
French (fr)
Other versions
WO2002099517A2 (en
Inventor
Mchael N Kozicki
Original Assignee
Axon Technologies Corp
Mchael N Kozicki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axon Technologies Corp, Mchael N Kozicki filed Critical Axon Technologies Corp
Priority to AU2002312317A priority Critical patent/AU2002312317A1/en
Publication of WO2002099517A2 publication Critical patent/WO2002099517A2/en
Publication of WO2002099517A3 publication Critical patent/WO2002099517A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1506—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect caused by electrodeposition, e.g. electrolytic deposition of an inorganic material on or close to an electrode
    • G02F1/1508—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect caused by electrodeposition, e.g. electrolytic deposition of an inorganic material on or close to an electrode using a solid electrolyte
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/155—Electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam

Abstract

A microelectronic photonic structure and a device and a system including the structure are disclosed. The photonic structure includes an ion conductor and a plurality of electrodes. Optical properties of the structure are altered by applying energy across the electrodes.
PCT/US2002/017711 2001-06-05 2002-06-04 Microelectronic photonic structure and device and method of forming the same WO2002099517A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002312317A AU2002312317A1 (en) 2001-06-05 2002-06-04 Microelectronic photonic structure and device and method of forming the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US29849601P 2001-06-05 2001-06-05
US60/298,496 2001-06-05
US36857902P 2002-03-29 2002-03-29
US60/368,579 2002-03-29

Publications (2)

Publication Number Publication Date
WO2002099517A2 WO2002099517A2 (en) 2002-12-12
WO2002099517A3 true WO2002099517A3 (en) 2003-08-07

Family

ID=26970704

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/017711 WO2002099517A2 (en) 2001-06-05 2002-06-04 Microelectronic photonic structure and device and method of forming the same

Country Status (3)

Country Link
AU (1) AU2002312317A1 (en)
TW (1) TWI267893B (en)
WO (1) WO2002099517A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102714210B (en) 2010-11-19 2015-08-12 松下电器产业株式会社 The manufacture method of non-volatile memory device and non-volatile memory device
US10710070B2 (en) 2015-11-24 2020-07-14 Arizona Board Of Regents On Behalf Of Arizona State University Low-voltage microfluidic valve device and system for regulating the flow of fluid
US11127694B2 (en) 2017-03-23 2021-09-21 Arizona Board Of Regents On Behalf Of Arizona State University Physical unclonable functions with copper-silicon oxide programmable metallization cells
US10466969B2 (en) 2017-05-08 2019-11-05 Arizona Board Of Regents On Behalf Of Arizona State University Tunable true random number generator using programmable metallization cell(s)
JP7170978B2 (en) * 2019-03-13 2022-11-15 株式会社デンソー optical deflector
US11244722B2 (en) 2019-09-20 2022-02-08 Arizona Board Of Regents On Behalf Of Arizona State University Programmable interposers for electrically connecting integrated circuits
US11935843B2 (en) 2019-12-09 2024-03-19 Arizona Board Of Regents On Behalf Of Arizona State University Physical unclonable functions with silicon-rich dielectric devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256379A (en) * 1976-07-07 1981-03-17 Imperial Chemical Industries Limited Electrochromic device
EP0434359A2 (en) * 1989-12-20 1991-06-26 Imperial Chemical Industries Plc Solid state electrochromic devices
US5761115A (en) * 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256379A (en) * 1976-07-07 1981-03-17 Imperial Chemical Industries Limited Electrochromic device
EP0434359A2 (en) * 1989-12-20 1991-06-26 Imperial Chemical Industries Plc Solid state electrochromic devices
US5761115A (en) * 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same

Also Published As

Publication number Publication date
TWI267893B (en) 2006-12-01
WO2002099517A2 (en) 2002-12-12
AU2002312317A1 (en) 2002-12-16

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