WO2002089168A3 - Silicon-based dielectric tunneling emitter - Google Patents

Silicon-based dielectric tunneling emitter Download PDF

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Publication number
WO2002089168A3
WO2002089168A3 PCT/US2002/012258 US0212258W WO02089168A3 WO 2002089168 A3 WO2002089168 A3 WO 2002089168A3 US 0212258 W US0212258 W US 0212258W WO 02089168 A3 WO02089168 A3 WO 02089168A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
layer
based dielectric
emitter
electron supply
Prior art date
Application number
PCT/US2002/012258
Other languages
French (fr)
Other versions
WO2002089168A2 (en
Inventor
Zhizhang Chen
Michael David Bice
Ronald L Enck
Michael J Regan
Thomas Novet
Paul J Benning
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Priority to EP02721776A priority Critical patent/EP1384243A2/en
Priority to KR10-2003-7014147A priority patent/KR20040041546A/en
Priority to JP2002586372A priority patent/JP2005515584A/en
Publication of WO2002089168A2 publication Critical patent/WO2002089168A2/en
Publication of WO2002089168A3 publication Critical patent/WO2002089168A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of Metal-Insulator-Metal [MIM] type

Abstract

An emitter (50, 100) has an electron supply layer (10) and a silicon-based dielectric layer (20) formed on the electron supply layer (10). The silicon-based dielectric layer (20) is preferably less than about 500 Angstroms. Optionally, an insulator layer (78) is formed on the electron supply layer (10) and has openings defined within in which the silicon-based dielectric layer (20) is formed. A cathode layer (14) is formed on the silicon-based dielectric layer (20) to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter (50,100) is subjected to an annealing process (120,122) thereby increasing the supply of electrons (16) tunneled from the electron supply layer (10) to the cathode layer (14).
PCT/US2002/012258 2001-04-30 2002-04-16 Silicon-based dielectric tunneling emitter WO2002089168A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02721776A EP1384243A2 (en) 2001-04-30 2002-04-16 Silicon-based dielectric tunneling emitter
KR10-2003-7014147A KR20040041546A (en) 2001-04-30 2002-04-16 Silicon-based dielectric tunneling emitter
JP2002586372A JP2005515584A (en) 2001-04-30 2002-04-16 Silicon-based dielectric tunnel emitter

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/846,047 US6753544B2 (en) 2001-04-30 2001-04-30 Silicon-based dielectric tunneling emitter
US09/846,047 2001-04-30

Publications (2)

Publication Number Publication Date
WO2002089168A2 WO2002089168A2 (en) 2002-11-07
WO2002089168A3 true WO2002089168A3 (en) 2003-05-01

Family

ID=25296794

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/012258 WO2002089168A2 (en) 2001-04-30 2002-04-16 Silicon-based dielectric tunneling emitter

Country Status (7)

Country Link
US (2) US6753544B2 (en)
EP (1) EP1384243A2 (en)
JP (1) JP2005515584A (en)
KR (1) KR20040041546A (en)
CN (1) CN1522454A (en)
TW (1) TW548842B (en)
WO (1) WO2002089168A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
DE10330571B8 (en) * 2003-07-07 2007-03-08 Infineon Technologies Ag Vertical power semiconductor devices with injection damping agent in the edge area and manufacturing method therefor
US7528539B2 (en) * 2004-06-08 2009-05-05 Ngk Insulators, Ltd. Electron emitter and method of fabricating electron emitter
US7429820B2 (en) * 2004-12-07 2008-09-30 Motorola, Inc. Field emission display with electron trajectory field shaping
FR2899572B1 (en) * 2006-04-05 2008-09-05 Commissariat Energie Atomique PROTECTION OF CAVITIES DECLOUCHANT ON ONE SIDE OF A MICROSTRUCTURE ELEMENT
KR101031269B1 (en) * 2009-06-09 2011-04-29 삼성중공업 주식회사 Ship of hull-vibration reduction type

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EP1094485A2 (en) * 1999-10-18 2001-04-25 Matsushita Electric Works, Ltd. Field emission-type electron source and manufacturing method thereof
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JP2001118500A (en) * 1999-10-18 2001-04-27 Matsushita Electric Works Ltd Electric field radiation electron source and method for fabricating

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Publication number Priority date Publication date Assignee Title
EP0989577A2 (en) * 1998-09-25 2000-03-29 Matsushita Electric Works, Ltd. Field emission electron source
EP1003195A2 (en) * 1998-11-16 2000-05-24 Matsushita Electric Works, Ltd. Field emission-type electron source and manufacturing method thereof and display using the electron source
EP1094485A2 (en) * 1999-10-18 2001-04-25 Matsushita Electric Works, Ltd. Field emission-type electron source and manufacturing method thereof
JP2001118489A (en) * 1999-10-18 2001-04-27 Matsushita Electric Works Ltd Electric field radiation electron source and method for manufacturing
JP2001118500A (en) * 1999-10-18 2001-04-27 Matsushita Electric Works Ltd Electric field radiation electron source and method for fabricating

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Also Published As

Publication number Publication date
EP1384243A2 (en) 2004-01-28
US6902458B2 (en) 2005-06-07
US6753544B2 (en) 2004-06-22
KR20040041546A (en) 2004-05-17
JP2005515584A (en) 2005-05-26
WO2002089168A2 (en) 2002-11-07
US20020167021A1 (en) 2002-11-14
US20040140748A1 (en) 2004-07-22
CN1522454A (en) 2004-08-18
TW548842B (en) 2003-08-21

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