WO2002073618A3 - Leseverstärkeranordnung für eine halbleiterspeichereinrichtung - Google Patents

Leseverstärkeranordnung für eine halbleiterspeichereinrichtung Download PDF

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Publication number
WO2002073618A3
WO2002073618A3 PCT/DE2002/000897 DE0200897W WO02073618A3 WO 2002073618 A3 WO2002073618 A3 WO 2002073618A3 DE 0200897 W DE0200897 W DE 0200897W WO 02073618 A3 WO02073618 A3 WO 02073618A3
Authority
WO
WIPO (PCT)
Prior art keywords
sense amplifier
semiconductor memory
compensation current
memory device
memory
Prior art date
Application number
PCT/DE2002/000897
Other languages
English (en)
French (fr)
Other versions
WO2002073618A2 (de
Inventor
Dietmar Gogl
Hans-Heinrich Viehmann
Original Assignee
Infineon Technologies Ag
Dietmar Gogl
Hans-Heinrich Viehmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Dietmar Gogl, Hans-Heinrich Viehmann filed Critical Infineon Technologies Ag
Priority to KR1020037011911A priority Critical patent/KR100575288B1/ko
Priority to JP2002572578A priority patent/JP3983673B2/ja
Publication of WO2002073618A2 publication Critical patent/WO2002073618A2/de
Publication of WO2002073618A3 publication Critical patent/WO2002073618A3/de
Priority to US10/662,634 priority patent/US6847568B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Abstract

Bei einer Leseverstärkeranordnung (10) für eine Halbleiterspeichereinrichtung (1) ist eine Kompensationsstromquelleneinrichtung (30) vorgesehen, durch welche ein Kompensationsstrom (Icomp) generierbar und einer verbundenen Bitleitung (4) zuführbar ist, wobei der Kompensationsstrom (Icomp) so gewählt ist, dass bei einem Lesevorgang in Zusammenwirken mt einer vorgesehenen Kompensationsspannungsquelleneinrichtung (20) auf der ausgewählten und verbundenen Bitleitungseinrichtung (4) eine im Wesentlichen zeitlich konstante Potenzialdifferenz generierbar und/oder aufrechthaltbar ist.
PCT/DE2002/000897 2001-03-14 2002-03-13 Leseverstärkeranordnung für eine halbleiterspeichereinrichtung WO2002073618A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020037011911A KR100575288B1 (ko) 2001-03-14 2002-03-13 반도체 메모리 장치용 센스 증폭기
JP2002572578A JP3983673B2 (ja) 2001-03-14 2002-03-13 半導体記憶装置用の読み出し増幅器構造
US10/662,634 US6847568B2 (en) 2001-03-14 2003-09-15 Sense amplifier configuration for a semiconductor memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10112281A DE10112281B4 (de) 2001-03-14 2001-03-14 Leseverstärkeranordnungen für eine Halbleiterspeichereinrichtung
DE10112281.0 2001-03-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/662,634 Continuation US6847568B2 (en) 2001-03-14 2003-09-15 Sense amplifier configuration for a semiconductor memory device

Publications (2)

Publication Number Publication Date
WO2002073618A2 WO2002073618A2 (de) 2002-09-19
WO2002073618A3 true WO2002073618A3 (de) 2003-05-01

Family

ID=7677447

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000897 WO2002073618A2 (de) 2001-03-14 2002-03-13 Leseverstärkeranordnung für eine halbleiterspeichereinrichtung

Country Status (6)

Country Link
US (1) US6847568B2 (de)
JP (1) JP3983673B2 (de)
KR (1) KR100575288B1 (de)
CN (1) CN100385569C (de)
DE (1) DE10112281B4 (de)
WO (1) WO2002073618A2 (de)

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JP4365591B2 (ja) * 2003-01-17 2009-11-18 Ｔｄｋ株式会社 磁気メモリデバイスおよび書込電流駆動回路、並びに書込電流駆動方法
US6958933B2 (en) * 2003-07-07 2005-10-25 Hewlett-Packard Development Company, L.P. Memory cell strings
US7042757B2 (en) * 2004-03-04 2006-05-09 Hewlett-Packard Development Company, L.P. 1R1D MRAM block architecture
US7239537B2 (en) * 2005-01-12 2007-07-03 International Business Machines Corporation Method and apparatus for current sense amplifier calibration in MRAM devices
US7099204B1 (en) * 2005-03-23 2006-08-29 Spansion Llc Current sensing circuit with a current-compensated drain voltage regulation
US7541953B2 (en) * 2005-12-23 2009-06-02 Alcatel-Lucent Usa Inc. Self-calibrating current source arrays
US7768866B2 (en) * 2006-05-03 2010-08-03 Macronix International Co., Ltd. Method and system for preventing noise disturbance in high speed, low power memory
KR101004514B1 (ko) * 2008-06-09 2010-12-31 주식회사 하이닉스반도체 Ｒｆｉｄ 장치
CN102959636B (zh) 2011-06-27 2014-12-31 松下电器产业株式会社 非易失性半导体存储装置及其读出方法
US9058857B2 (en) * 2011-10-10 2015-06-16 Micron Technology, Inc. Cross-point memory compensation
FR3025647B1 (fr) * 2014-09-09 2018-01-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif et procede d'ecriture de donnees dans une memoire resistive
US9530501B2 (en) 2014-12-31 2016-12-27 Freescale Semiconductor, Inc. Non-volatile static random access memory (NVSRAM) having a shared port
US9466394B1 (en) 2015-04-09 2016-10-11 Freescale Semiconductor, Inc. Mismatch-compensated sense amplifier for highly scaled technology
KR102424371B1 (ko) * 2016-01-19 2022-07-25 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
CN110136759B (zh) * 2018-02-09 2021-01-12 上海磁宇信息科技有限公司 降低读操作对数据扰动的电路
US10803912B2 (en) 2019-01-18 2020-10-13 Sandisk Technologies Llc Fast voltage compensation without feedback
US10726897B1 (en) 2019-05-14 2020-07-28 International Business Machines Corporation Trimming MRAM sense amp with offset cancellation
CN111312303A (zh) * 2020-02-13 2020-06-19 深圳市紫光同创电子有限公司 静态随机存储器位线漏电流的补偿方法及装置
US11887655B2 (en) 2020-08-13 2024-01-30 Anhui University Sense amplifier, memory, and method for controlling sense amplifier by configuring structures using switches
US11929111B2 (en) * 2020-09-01 2024-03-12 Anhui University Sense amplifier, memory and method for controlling sense amplifier
US11862285B2 (en) 2020-09-01 2024-01-02 Anhui University Sense amplifier, memory and control method of sense amplifier
CN112992200B (zh) * 2021-03-24 2022-05-17 长鑫存储技术有限公司 灵敏放大器、存储器以及控制方法
US11894101B2 (en) 2021-03-24 2024-02-06 Changxin Memory Technologies, Inc. Sense amplifier, memory and control method
US11823763B2 (en) 2021-03-24 2023-11-21 Changxin Memory Technologies, Inc. Sense amplifier, memory and control method

Citations (5)

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Publication number Priority date Publication date Assignee Title
US5872739A (en) * 1997-04-17 1999-02-16 Radiant Technologies Sense amplifier for low read-voltage memory cells
US5886931A (en) * 1997-06-20 1999-03-23 Sony Corporation Data determining circuitry and data determining method
DE19914488C1 (de) * 1999-03-30 2000-05-31 Siemens Ag Vorrichtung zur Bewertung der Zellenwiderstände in einem magnetoresistiven Speicher
US6188615B1 (en) * 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
EP1104092A2 (de) * 1999-10-29 2001-05-30 Hewlett-Packard Company, A Delaware Corporation Operationsverstärker mit digitaler Offset-Kalibrierung

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US4514828A (en) * 1979-11-05 1985-04-30 Texas Instruments Incorporated Magnetic bubble memory sense amplifier having a pulsed current mode of operation
US4742488A (en) * 1982-10-25 1988-05-03 Advanced Micro Devices, Inc. Sense amplifier/write circuit for semiconductor memories

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872739A (en) * 1997-04-17 1999-02-16 Radiant Technologies Sense amplifier for low read-voltage memory cells
US5886931A (en) * 1997-06-20 1999-03-23 Sony Corporation Data determining circuitry and data determining method
DE19914488C1 (de) * 1999-03-30 2000-05-31 Siemens Ag Vorrichtung zur Bewertung der Zellenwiderstände in einem magnetoresistiven Speicher
US6188615B1 (en) * 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
EP1104092A2 (de) * 1999-10-29 2001-05-30 Hewlett-Packard Company, A Delaware Corporation Operationsverstärker mit digitaler Offset-Kalibrierung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"VERSTAERKER ZUR VERSTAERKUNG KLEINER STROEME", RESEARCH DISCLOSURE, KENNETH MASON PUBLICATIONS, HAMPSHIRE, GB, no. 338, 1 June 1992 (1992-06-01), pages 519 - 522, XP000315729, ISSN: 0374-4353 *

Also Published As

Publication number Publication date
JP3983673B2 (ja) 2007-09-26
CN1496568A (zh) 2004-05-12
KR100575288B1 (ko) 2006-04-28
DE10112281A1 (de) 2002-09-26
KR20040005887A (ko) 2004-01-16
JP2004522242A (ja) 2004-07-22
DE10112281B4 (de) 2006-06-29
WO2002073618A2 (de) 2002-09-19
CN100385569C (zh) 2008-04-30
US6847568B2 (en) 2005-01-25
US20040218446A1 (en) 2004-11-04

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