WO2002063665A3 - RELAXED InXGa1-xAs LAYERS INTEGRATED WITH Si - Google Patents

RELAXED InXGa1-xAs LAYERS INTEGRATED WITH Si Download PDF

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Publication number
WO2002063665A3
WO2002063665A3 PCT/US2002/002334 US0202334W WO02063665A3 WO 2002063665 A3 WO2002063665 A3 WO 2002063665A3 US 0202334 W US0202334 W US 0202334W WO 02063665 A3 WO02063665 A3 WO 02063665A3
Authority
WO
WIPO (PCT)
Prior art keywords
inxga1
relaxed
xas
layers integrated
xas layers
Prior art date
Application number
PCT/US2002/002334
Other languages
French (fr)
Other versions
WO2002063665A2 (en
Inventor
Mayank Bulsara
Eugene A Fitzgerald
Original Assignee
Amberwave Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/779,915 external-priority patent/US6589335B2/en
Priority claimed from US09/779,917 external-priority patent/US6594293B1/en
Application filed by Amberwave Systems Corp filed Critical Amberwave Systems Corp
Priority to AU2002241984A priority Critical patent/AU2002241984A1/en
Publication of WO2002063665A2 publication Critical patent/WO2002063665A2/en
Publication of WO2002063665A3 publication Critical patent/WO2002063665A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

Abstract

A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxially growing a relaxed graded layer of InxGa1-xAs at a temperature ranging upwards from about 600°C with a subsequent process for planarization of the InGaAs alloy.
PCT/US2002/002334 2001-02-08 2002-01-28 RELAXED InXGa1-xAs LAYERS INTEGRATED WITH Si WO2002063665A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002241984A AU2002241984A1 (en) 2001-02-08 2002-01-28 Relaxed inxga1-xas layers integrated with si

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/779,915 2001-02-08
US09/779,915 US6589335B2 (en) 2001-02-08 2001-02-08 Relaxed InxGa1-xAs layers integrated with Si
US09/779,917 US6594293B1 (en) 2001-02-08 2001-02-08 Relaxed InxGa1-xAs layers integrated with Si
US09/779,917 2001-02-08

Publications (2)

Publication Number Publication Date
WO2002063665A2 WO2002063665A2 (en) 2002-08-15
WO2002063665A3 true WO2002063665A3 (en) 2003-01-23

Family

ID=27119639

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/002334 WO2002063665A2 (en) 2001-02-08 2002-01-28 RELAXED InXGa1-xAs LAYERS INTEGRATED WITH Si

Country Status (2)

Country Link
AU (1) AU2002241984A1 (en)
WO (1) WO2002063665A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0375564A1 (en) * 1988-12-22 1990-06-27 Fujitsu Limited Semiconductor device having a buffer structure for eliminating defects from a semiconductor layer grown thereon
EP0514018A2 (en) * 1991-04-24 1992-11-19 AT&T Corp. Method for making low defect density semiconductor heterostructure and devices made thereby
US5621227A (en) * 1995-07-18 1997-04-15 Discovery Semiconductors, Inc. Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
JPH10284510A (en) * 1997-04-08 1998-10-23 Nippon Steel Corp Semiconductor substrate
WO1999028958A1 (en) * 1997-12-01 1999-06-10 Massachusetts Institute Of Technology RELAXED InxGA(1-x)As GRADED BUFFERS
JP2001102312A (en) * 1999-09-28 2001-04-13 Kyocera Corp Compound semiconductor substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0375564A1 (en) * 1988-12-22 1990-06-27 Fujitsu Limited Semiconductor device having a buffer structure for eliminating defects from a semiconductor layer grown thereon
EP0514018A2 (en) * 1991-04-24 1992-11-19 AT&T Corp. Method for making low defect density semiconductor heterostructure and devices made thereby
US5621227A (en) * 1995-07-18 1997-04-15 Discovery Semiconductors, Inc. Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
JPH10284510A (en) * 1997-04-08 1998-10-23 Nippon Steel Corp Semiconductor substrate
WO1999028958A1 (en) * 1997-12-01 1999-06-10 Massachusetts Institute Of Technology RELAXED InxGA(1-x)As GRADED BUFFERS
JP2001102312A (en) * 1999-09-28 2001-04-13 Kyocera Corp Compound semiconductor substrate

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BULSARA M T ET AL: "RELAXED INXGA1-XAS GRADED BUFFERS GROWN WITH ORGANOMETALLIC VAPOR PHASE EPITAXY ON GAAS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 72, no. 13, 30 March 1998 (1998-03-30), pages 1608 - 1610, XP000742903, ISSN: 0003-6951 *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 01 29 January 1999 (1999-01-29) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 21 3 August 2001 (2001-08-03) *
UCHIDA T ET AL: "CW OPERATION OF A 1.3-MUM STRAINED QUANTUM WELL LASER ON A GRADED INGAAS BUFFER WITH A GAAS SUBSTRATE", PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS. HOKKAIDO, MAY 9 - 13, 1995, NEW YORK, IEEE, US, vol. CONF. 7, 9 May 1995 (1995-05-09), pages 22 - 25, XP000630612, ISBN: 0-7803-2148-0 *

Also Published As

Publication number Publication date
WO2002063665A2 (en) 2002-08-15
AU2002241984A1 (en) 2002-08-19

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