WO2002041371A1 - Semiconductor structure having high dielectric constant material - Google Patents
Semiconductor structure having high dielectric constant material Download PDFInfo
- Publication number
- WO2002041371A1 WO2002041371A1 PCT/US2001/031990 US0131990W WO0241371A1 WO 2002041371 A1 WO2002041371 A1 WO 2002041371A1 US 0131990 W US0131990 W US 0131990W WO 0241371 A1 WO0241371 A1 WO 0241371A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- monocrystalline
- growing
- earth metal
- alkali earth
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 239000000463 material Substances 0.000 title claims abstract description 32
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 59
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 48
- 229910052712 strontium Inorganic materials 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000010936 titanium Substances 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 17
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 229910052788 barium Inorganic materials 0.000 claims description 12
- 230000004907 flux Effects 0.000 claims description 11
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 8
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 238000003877 atomic layer epitaxy Methods 0.000 claims description 3
- 238000000224 chemical solution deposition Methods 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000004211 migration-enhanced epitaxy Methods 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 6
- 229910008310 Si—Ge Inorganic materials 0.000 claims 3
- 150000002500 ions Chemical class 0.000 claims 2
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910002938 (Ba,Sr)TiO3 Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 122
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 28
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 16
- 229910002113 barium titanate Inorganic materials 0.000 description 15
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 4
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 238000004871 chemical beam epitaxy Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- -1 lanthanum aluminate Chemical class 0.000 description 2
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 229910016064 BaSi2 Inorganic materials 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- ZGYRNAAWPCRERX-UHFFFAOYSA-N lanthanum(3+) oxygen(2-) scandium(3+) Chemical compound [O--].[O--].[O--].[Sc+3].[La+3] ZGYRNAAWPCRERX-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- LCGWNWAVPULFIF-UHFFFAOYSA-N strontium barium(2+) oxygen(2-) Chemical compound [O--].[O--].[Sr++].[Ba++] LCGWNWAVPULFIF-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical class [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01981536A EP1338029A1 (en) | 2000-11-14 | 2001-10-15 | Semiconductor structure having high dielectric constant material |
KR10-2003-7006563A KR20030051820A (en) | 2000-11-14 | 2001-10-15 | Semiconductor structure having high dielectric constant material |
JP2002543681A JP2004514288A (en) | 2000-11-14 | 2001-10-15 | Semiconductor structure containing high dielectric constant material |
AU2002213173A AU2002213173A1 (en) | 2000-11-14 | 2001-10-15 | Semiconductor structure having high dielectric constant material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71242500A | 2000-11-14 | 2000-11-14 | |
US09/712,425 | 2000-11-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002041371A1 true WO2002041371A1 (en) | 2002-05-23 |
Family
ID=24862055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/031990 WO2002041371A1 (en) | 2000-11-14 | 2001-10-15 | Semiconductor structure having high dielectric constant material |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1338029A1 (en) |
JP (1) | JP2004514288A (en) |
KR (1) | KR20030051820A (en) |
CN (1) | CN1475027A (en) |
AU (1) | AU2002213173A1 (en) |
TW (1) | TW507317B (en) |
WO (1) | WO2002041371A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003063227A2 (en) * | 2002-01-22 | 2003-07-31 | Massachusetts Institute Of Technology | A method of fabrication for iii-v semiconductor surface passivation |
WO2004032242A1 (en) * | 2002-09-30 | 2004-04-15 | Freescale Semiconductor, Inc. | Semiconductor device structures which utilize metal sulfides |
US7678633B2 (en) | 2005-11-24 | 2010-03-16 | National Tsing Hua University | Method for forming substrates for MOS transistor components and its products |
EP2166562A3 (en) * | 2008-09-22 | 2010-08-04 | Imec | Method for forming a capacitor having a strontium/barium titanium oxide dielectric layer by means of ALD and memory device comprising such a capacitor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9396946B2 (en) * | 2011-06-27 | 2016-07-19 | Cree, Inc. | Wet chemistry processes for fabricating a semiconductor device with increased channel mobility |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5596214A (en) * | 1994-05-30 | 1997-01-21 | Nec Corporation | Non-volatile semiconductor memory device having a metal-insulator-semiconductor gate structure and method for fabricating the same |
EP0810666A1 (en) * | 1996-05-30 | 1997-12-03 | Oki Electric Industry Co., Ltd. | Non-volatile semiconductor memory cell and method for production thereof |
EP0957522A2 (en) * | 1998-05-13 | 1999-11-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device and method for fabricating the same |
EP1043426A1 (en) * | 1999-03-22 | 2000-10-11 | Motorola, Inc. | Method for fabricating a semiconductor structure having a single atomic layer with alkaline earth metal metal, oxygen and silicon at the interface between a silicon substrate and a single crystal oxide layer |
-
2001
- 2001-10-15 EP EP01981536A patent/EP1338029A1/en not_active Withdrawn
- 2001-10-15 KR KR10-2003-7006563A patent/KR20030051820A/en not_active Application Discontinuation
- 2001-10-15 AU AU2002213173A patent/AU2002213173A1/en not_active Abandoned
- 2001-10-15 WO PCT/US2001/031990 patent/WO2002041371A1/en not_active Application Discontinuation
- 2001-10-15 CN CNA018188613A patent/CN1475027A/en active Pending
- 2001-10-15 JP JP2002543681A patent/JP2004514288A/en active Pending
- 2001-10-31 TW TW090127029A patent/TW507317B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5596214A (en) * | 1994-05-30 | 1997-01-21 | Nec Corporation | Non-volatile semiconductor memory device having a metal-insulator-semiconductor gate structure and method for fabricating the same |
EP0810666A1 (en) * | 1996-05-30 | 1997-12-03 | Oki Electric Industry Co., Ltd. | Non-volatile semiconductor memory cell and method for production thereof |
EP0957522A2 (en) * | 1998-05-13 | 1999-11-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device and method for fabricating the same |
EP1043426A1 (en) * | 1999-03-22 | 2000-10-11 | Motorola, Inc. | Method for fabricating a semiconductor structure having a single atomic layer with alkaline earth metal metal, oxygen and silicon at the interface between a silicon substrate and a single crystal oxide layer |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003063227A2 (en) * | 2002-01-22 | 2003-07-31 | Massachusetts Institute Of Technology | A method of fabrication for iii-v semiconductor surface passivation |
WO2003063227A3 (en) * | 2002-01-22 | 2004-04-15 | Massachusetts Inst Technology | A method of fabrication for iii-v semiconductor surface passivation |
US6933244B2 (en) | 2002-01-22 | 2005-08-23 | Massachusetts Institute Of Technology | Method of fabrication for III-V semiconductor surface passivation |
WO2004032242A1 (en) * | 2002-09-30 | 2004-04-15 | Freescale Semiconductor, Inc. | Semiconductor device structures which utilize metal sulfides |
US6791125B2 (en) | 2002-09-30 | 2004-09-14 | Freescale Semiconductor, Inc. | Semiconductor device structures which utilize metal sulfides |
US7678633B2 (en) | 2005-11-24 | 2010-03-16 | National Tsing Hua University | Method for forming substrates for MOS transistor components and its products |
EP2166562A3 (en) * | 2008-09-22 | 2010-08-04 | Imec | Method for forming a capacitor having a strontium/barium titanium oxide dielectric layer by means of ALD and memory device comprising such a capacitor |
Also Published As
Publication number | Publication date |
---|---|
CN1475027A (en) | 2004-02-11 |
JP2004514288A (en) | 2004-05-13 |
AU2002213173A1 (en) | 2002-05-27 |
EP1338029A1 (en) | 2003-08-27 |
KR20030051820A (en) | 2003-06-25 |
TW507317B (en) | 2002-10-21 |
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