WO2002015252A3 - A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device - Google Patents

A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device Download PDF

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Publication number
WO2002015252A3
WO2002015252A3 PCT/EP2001/008925 EP0108925W WO0215252A3 WO 2002015252 A3 WO2002015252 A3 WO 2002015252A3 EP 0108925 W EP0108925 W EP 0108925W WO 0215252 A3 WO0215252 A3 WO 0215252A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
metal film
film
etching step
metal
Prior art date
Application number
PCT/EP2001/008925
Other languages
French (fr)
Other versions
WO2002015252A2 (en
Inventor
Yoshihisa Hatta
Akinori Matsumoto
Shinichi Li
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Priority to KR1020027004675A priority Critical patent/KR20020064795A/en
Priority to EP01962899A priority patent/EP1309991A2/en
Publication of WO2002015252A2 publication Critical patent/WO2002015252A2/en
Publication of WO2002015252A3 publication Critical patent/WO2002015252A3/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Abstract

The invention provides a method for forming a metal film for a thin film device so as to have certain gentle taper angles. The method is an improved fine work method to produce metal films such as light shutter films for thin film devices through the combined production method of a wet-etching step and a dry-etching step. Preliminarily, the cross sectional shape of the resist film is formed so as to have certain taper angles at both end portions. Accordingly, during the dry-etching step, an etchant gas can smoothly flow through along the sidewall of the resist and accordingly the metal film can be formed so as to have gentle taper angles along the flow line of the etchant gas. Thus, it is possible in accordance with the invention to significantly improve the production efficiency and the quality of such thin film devices as the TFTs to be used for the LCDs.
PCT/EP2001/008925 2000-08-16 2001-08-02 A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device WO2002015252A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020027004675A KR20020064795A (en) 2000-08-16 2001-08-02 A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device
EP01962899A EP1309991A2 (en) 2000-08-16 2001-08-02 A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-246994 2000-08-16
JP2000246994A JP2002062665A (en) 2000-08-16 2000-08-16 Method of manufacturing metallic film, thin-film device having this metallic film and liquid crystal display device having this thin-film device

Publications (2)

Publication Number Publication Date
WO2002015252A2 WO2002015252A2 (en) 2002-02-21
WO2002015252A3 true WO2002015252A3 (en) 2002-11-21

Family

ID=18737179

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/008925 WO2002015252A2 (en) 2000-08-16 2001-08-02 A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device

Country Status (6)

Country Link
US (1) US20020022364A1 (en)
EP (1) EP1309991A2 (en)
JP (1) JP2002062665A (en)
KR (1) KR20020064795A (en)
CN (1) CN1404626A (en)
WO (1) WO2002015252A2 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW497269B (en) * 2000-05-13 2002-08-01 Semiconductor Energy Lab Manufacturing method of semiconductor device
US20060157709A1 (en) * 2002-08-20 2006-07-20 Koninklijke Philips Electronics N.V. Thin film transistor
KR100465203B1 (en) 2002-08-30 2005-01-13 현대모비스 주식회사 upper tray mounting structure
JP4549866B2 (en) * 2003-02-05 2010-09-22 株式会社半導体エネルギー研究所 Manufacturing method of display device
EP1592054A4 (en) * 2003-02-05 2010-08-25 Semiconductor Energy Lab Display manufacturing method
WO2004070819A1 (en) * 2003-02-05 2004-08-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display
KR101131531B1 (en) * 2003-02-06 2012-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing display
CN100392828C (en) * 2003-02-06 2008-06-04 株式会社半导体能源研究所 Method for manufacturing display device
KR101145350B1 (en) * 2003-02-06 2012-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Methods for manufacturing semiconductor device and display
JP2006108433A (en) * 2004-10-06 2006-04-20 Sharp Corp Manufacturing method of semiconductor device
US7573537B2 (en) * 2005-01-17 2009-08-11 Samsung Electronics Co., Ltd. Array substrate, liquid crystal display panel having the same and liquid crystal display device having the same
US7995887B2 (en) * 2005-08-03 2011-08-09 Sharp Kabushiki Kaisha Liquid crystal display device and electronic device using the same
KR100661221B1 (en) * 2005-12-30 2006-12-22 동부일렉트로닉스 주식회사 Manufacturing method of flash memory cell
CN101395525B (en) 2006-03-23 2010-11-10 夏普株式会社 Liquid crystal display device
CN101484839B (en) * 2006-06-30 2012-07-04 夏普株式会社 Liquid crystal display and method for manufacturing liquid crystal display
US7741230B2 (en) * 2006-08-08 2010-06-22 Intel Corporation Highly-selective metal etchants
JP4927851B2 (en) 2006-09-12 2012-05-09 シャープ株式会社 Liquid crystal display panel with microlens array, manufacturing method thereof, and liquid crystal display device
US7995167B2 (en) * 2006-10-18 2011-08-09 Sharp Kabushiki Kaisha Liquid crystal display device and method for manufacturing liquid crystal display device
JPWO2008047517A1 (en) * 2006-10-18 2010-02-18 シャープ株式会社 Liquid crystal display device and method of manufacturing liquid crystal display device
JP5284106B2 (en) * 2006-12-14 2013-09-11 シャープ株式会社 Liquid crystal display device and method of manufacturing liquid crystal display device
KR100824964B1 (en) * 2006-12-26 2008-04-28 주식회사 코윈디에스티 Apparatus and method for forming thin metal film using laser
EP2128690B1 (en) * 2007-01-24 2013-10-23 Sharp Kabushiki Kaisha Liquid crystal display device
JP5048688B2 (en) * 2007-01-31 2012-10-17 シャープ株式会社 Liquid crystal display
WO2008129748A1 (en) 2007-04-13 2008-10-30 Sharp Kabushiki Kaisha Liquid crystal display and method of manufacturing liquid crystal display
US8384860B2 (en) 2007-06-26 2013-02-26 Sharp Kabushiki Kaisha Liquid crystal display device and method of manufacturing liquid crystal display device
KR101747391B1 (en) * 2009-07-07 2017-06-15 엘지디스플레이 주식회사 Array substrate for liquid crystal display device and methode of fabricating the same
CN103295970B (en) 2013-06-05 2015-04-29 京东方科技集团股份有限公司 Array substrate and manufacturing method thereof and display device
KR102091444B1 (en) 2013-10-08 2020-03-23 삼성디스플레이 주식회사 Display substrate and method of manufacturing a display substrate
US9716013B2 (en) * 2014-02-04 2017-07-25 Texas Instruments Incorporated Sloped photoresist edges for defect reduction for metal dry etch processes
US9660603B2 (en) * 2015-04-09 2017-05-23 Texas Instruments Incorporated Sloped termination in molybdenum layers and method of fabricating
US11195754B2 (en) 2018-10-09 2021-12-07 International Business Machines Corporation Transistor with reduced gate resistance and improved process margin of forming self-aligned contact
CN112768353A (en) * 2020-12-28 2021-05-07 深圳清华大学研究院 Method for improving appearance of metal electrode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518467A2 (en) * 1991-04-20 1992-12-16 Canon Kabushiki Kaisha Substrate for recording head, recording head and method for producing same
US5174857A (en) * 1990-10-29 1992-12-29 Gold Star Co., Ltd. Slope etching process
US5242543A (en) * 1991-02-06 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Wet etching method for forming metal film pattern having tapered edges
US5409566A (en) * 1990-07-31 1995-04-25 Goldstar Co., Ltd. Slope etching process
JPH09263974A (en) * 1996-03-29 1997-10-07 Sanyo Electric Co Ltd Etching method of chromium film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5409566A (en) * 1990-07-31 1995-04-25 Goldstar Co., Ltd. Slope etching process
US5174857A (en) * 1990-10-29 1992-12-29 Gold Star Co., Ltd. Slope etching process
US5242543A (en) * 1991-02-06 1993-09-07 Mitsubishi Denki Kabushiki Kaisha Wet etching method for forming metal film pattern having tapered edges
EP0518467A2 (en) * 1991-04-20 1992-12-16 Canon Kabushiki Kaisha Substrate for recording head, recording head and method for producing same
JPH09263974A (en) * 1996-03-29 1997-10-07 Sanyo Electric Co Ltd Etching method of chromium film

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KOBAYASHI K ET AL: "Fabrication of 10-in.-diagonal 16-gray-level TFT-LCDs by novel processing technologies", JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, JAN. 1993, USA, vol. 1, no. 1, pages 67 - 73, XP001074114, ISSN: 0734-1768 *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 02 30 January 1998 (1998-01-30) *

Also Published As

Publication number Publication date
JP2002062665A (en) 2002-02-28
US20020022364A1 (en) 2002-02-21
EP1309991A2 (en) 2003-05-14
WO2002015252A2 (en) 2002-02-21
KR20020064795A (en) 2002-08-09
CN1404626A (en) 2003-03-19

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