WO2002007228A1 - Light emitting diode with lens - Google Patents
Light emitting diode with lens Download PDFInfo
- Publication number
- WO2002007228A1 WO2002007228A1 PCT/GB2001/003155 GB0103155W WO0207228A1 WO 2002007228 A1 WO2002007228 A1 WO 2002007228A1 GB 0103155 W GB0103155 W GB 0103155W WO 0207228 A1 WO0207228 A1 WO 0207228A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lens
- light emitting
- led
- refractive index
- emitting diode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Definitions
- the present invention relates to light emitting diodes (LEDs). It is particularly but not exclusively directed to LEDs which emit electromagnetic radiation through a side surface of the semiconductor structure which lies parallel to the diode junction.
- Light emitting diodes have many applications, including telecommunications, spectroscopy and gas sensing.
- a recent development is that of room temperature infra-red light emitting diodes which cover the 3 to 12 micron spectral region where gases such as carbon dioxide, carbon monoxide, nitrogen oxides, sulphur oxides and carbohydrates have strong selective absorption bands enabling quantitative gas detection.
- a major reason for the low output power is the inefficiency in transmitting the light generated at the diode junction to the exterior, and a principal cause thereof is total internal reflection within the device.
- light can only pass from an optically dense medium (high real refractive index of value n) to air (where n is nominally unity) if its angle of incidence is no greater than sin _I (l/n), and it otherwise undergoes total internal reflection.
- the present invention is directed to reducing the amount of light lost due to reflection within LEDs, and/or to increasing the directionality of light emitted from LEDs.
- the first step should reduce the optical output power necessary from the diode junction for a given device overall output, or should increase the device overall output for a given output from the diode junction.
- the second step should reduce the optical output power necessary from the diode junction for a given device output in a predetermined direction, or should increase the device output in a predetermined direction for a given output from the diode junction.
- the glass dome is similar, except that the a spherical segment base is replaced by a coaxial right cylinder base of radius r and height r/n, which is easier to manufacture but does lead to a some lowering of efficiency.
- the present invention provides a light emitting diode device provided on its light emitting surface with a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than 0.95r/n, where n is the real refractive index of the lens.
- the present invention also provides light emitting diode device provided on its light emitting surface with a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than (r/n)(l - d/2r) where d is the LED diameter and n is the real refractive index of the lens.
- the invention extends to a lens as defined in either of the two preceding paragraphs. It also extends to methods of making a device (or an adapted LED) as defined in either of the two preceding paragraphs.
- h is no greater than 0.85r/n.
- a preferred lower limit for h is 0.3r/n, more preferably 0.5r/n.
- the focussing element may be formed in an additional layer made integrally with LED, for example by deposition of a semiconducting layer during or after formation of the LED. Shaping of the additional layer may be by any means known per se, for example by etching or ion beam milling, e.g. after deposition thereof.
- the focussing element may be made from a separate layer, for example of glass or a semiconducting material such as germanium, which is secured to the light emitting surface of the LED in optical contact therewith.
- optical contact is meant that the gap between the device and the element is no greater than one quarter of the LED wavelength within the material (i.e. vacuum wavelength divided by n), thus providing a condition in which total internal reflection is effectively prevented ⁇ and permitting light generated within the device to penetrate through the element surface over a wide range of incident angles.
- the securing is effected by use of a sufficiently thin layer of optically transparent adhesive. This will generally require specialised or adapted tooling and a controlled pressure.
- While shaping of a layer thus secured may be effected after the securing step, it is preferably effected prior thereto.
- the refractive index of the material of the focussing element preferably has a refractive index differing from the adjacent LED layer by no more than 1, more preferably no more than 0.5, even more preferably no more than 0.3, and most preferably, it equals that of the adjacent LED layer, e.g. by being made of the same material.
- Figure 1 shows an embodiment of the invention in diagrammatic cross-section
- Figure 2 is a ray tracing for a typical dome structure with base height of r/n.
- Figure 1 shows a first arrangement according to the invention in which an indium antimonide or indium antimonide alloy LED mesa 1 is formed upon (and normally integrally with) a semiconductor substrate 2, the latter in turn being supported upon a further substrate 3.
- the flat surface 4 of a germanium lens 5 is secured to a flat light emitting surface of the diode mesa 1 by a layer 6 of optically transparent glue, using tooling and a controlled pressure to ensure that the glue thickness is less than one quarter of the LED wavelength inside the material.
- the lens 5 comprises a convex (hemispherical) portion 7 with a radius of curvature of 2.5 mm, and a right cylindrical base portion 8 which is 0.5 mm high (thick), allowing the light from the LED to be retransmitted without total internal reflection restrictions.
- the LED is coaxial with the lens 5 and has a diameter of up to 1 mm.
- Spherical aberration of lens 5 can be avoided only for point sources on the axis, and for all sources of finite dimension the spherical aberration is significant. In the latter case, as in Figure 1, both the apparent source position and its apparent area are determined by the circle of least confusion, which depends strongly on the actual emitting area and also on the thickness h. It should therefore be clear that the geometry normally needs to be optimised with respect to the brightness of the LED 1 and the angular distribution of light therefrom.
- Optimisation of the height h for a particular LED light emitting area is effected by ray tracing the position and diameter of the circle of least confusion, using ray tracing software.
- the surface of the lens 5 will normally be provided with an antireflection coating.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
To increase the amount and/or directionality of light from a light emitting diode (LED) 1, it is provided on its light emitting surface with a lens (5) comprising a substantially hemispherical portion (7) of radius (r) on a base portion (8) of height (h), where (h) is no greater than 0.95 r/n, or no greater than (r/n)(1 - d/2r), d is the LED diameter and n is the real refractive index of the lens. Preferably lens (5) is substantially index matched to the LED, for example Ge on an indium antimonide or indium antimonide alloy LED for use in the infra-red, and has an antireflection coating. It may be provided by depositiong and shaping a semiconducting layer during and/or after the formation of the LED, or a separate layer may be secured thereto by an optically thin layer of adhesive.
Description
Light Emitting Diode With Lens
The present invention relates to light emitting diodes (LEDs). It is particularly but not exclusively directed to LEDs which emit electromagnetic radiation through a side surface of the semiconductor structure which lies parallel to the diode junction.
Light emitting diodes have many applications, including telecommunications, spectroscopy and gas sensing. A recent development is that of room temperature infra-red light emitting diodes which cover the 3 to 12 micron spectral region where gases such as carbon dioxide, carbon monoxide, nitrogen oxides, sulphur oxides and carbohydrates have strong selective absorption bands enabling quantitative gas detection.
It is clearly advantageous to be able to maximise the optical output power of a light emitting diode. For example in infra-red gas sensing at low concentrations, such as in the parts-per-billion (ppb) to parts-per-million (ppm) range, the output powers of existing devices are not sufficient to provide conditions allowing a good signal-to- noise ratio.
A major reason for the low output power is the inefficiency in transmitting the light generated at the diode junction to the exterior, and a principal cause thereof is total internal reflection within the device. As is well known, light can only pass from an optically dense medium (high real refractive index of value n) to air (where n is nominally unity) if its angle of incidence is no greater than sin_I(l/n), and it otherwise undergoes total internal reflection. Thus, for a side emitting LED based on indium antimonide (InSb), where n = 4, and assuming a uniform angular distribution of optical emission from the diode junction over a solid hemispherical angle 2π towards a planar side surface of the device, only 3% of the light emitted within the junction is directly transmitted through the planar surface.
Additionally, the latter small amount of light is emitted over a large solid angle. It is commonly difficult or impractical to collect light within a large solid angle by the use of external optics, thereby adding to the disadvantages when a directed beam of light is required.
The present invention is directed to reducing the amount of light lost due to reflection within LEDs, and/or to increasing the directionality of light emitted from LEDs. The first step should reduce the optical output power necessary from the diode junction for a given device overall output, or should increase the device overall output for a given output from the diode junction. The second step should reduce the optical output power necessary from the diode junction for a given device output in a predetermined direction, or should increase the device output in a predetermined direction for a given output from the diode junction.
It is known to provide the light emitting surface of a light emitting diode with a focussing structure for increasing the amount of emitted light by reason of its shape and improved index matching with the LED. Typical examples are a hemisphere, a Weierstrasse sphere and a glass dome, each of which is described in pages 58 to 63 of "Injection Luminescent Devices" by C H Gouch, Wiley 1979.
Conventionally the Weierstrasse sphere, viz. a hemisphere of radius r on a spherical segment base of equal radius r, is formed with a base height h = r/n, where n is the refractive index of the material of the sphere, and it can provide an increase in light output of up to 2n times (about 32 for Ge) relative to that of the diode 1 without a focussing element. The glass dome is similar, except that the a spherical segment base is replaced by a coaxial right cylinder base of radius r and height r/n, which is easier to manufacture but does lead to a some lowering of efficiency.
However, it has now been appreciated that this base thickness is not always optimal since ray tracing diagrams indicate that the output thereof provides both diverging and converging rays, as illustrated in Figure 2. The existence of the converging rays increases the apparent size of the source and hence decreases the radiance of the source (the LED).
To eliminate this effect it has been found that the height h needs to be no greater than (r/n)(l - d/2r) where d is the LED diameter. Where d = 0.3 and r = 1.5, this leads to the conclusion that h has to be less than 0.9r/n.
The present invention provides a light emitting diode device provided on its light emitting surface with a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than 0.95r/n, where n is the real refractive index of the lens.
The present invention also provides light emitting diode device provided on its light emitting surface with a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than (r/n)(l - d/2r) where d is the LED diameter and n is the real refractive index of the lens.
The invention extends to a lens as defined in either of the two preceding paragraphs. It also extends to methods of making a device (or an adapted LED) as defined in either of the two preceding paragraphs.
It should be understood that although specific reference has been made to a glass dome and a Weierstrasse sphere, in which the base has a specific shape, any other optically appropriate base shape could be employed with the invention so long as its height is within the specified range.
Preferably h is no greater than 0.85r/n. A preferred lower limit for h is 0.3r/n, more preferably 0.5r/n.
The focussing element may be formed in an additional layer made integrally with LED, for example by deposition of a semiconducting layer during or after formation of the LED. Shaping of the additional layer may be by any means known per se, for example by etching or ion beam milling, e.g. after deposition thereof.
Alternatively, the focussing element may be made from a separate layer, for example of glass or a semiconducting material such as germanium, which is secured to the light emitting surface of the LED in optical contact therewith. By "optical contact" is meant that the gap between the device and the element is no greater than one quarter of the LED wavelength within the material (i.e. vacuum wavelength divided by n), thus providing a condition in which total internal reflection is effectively prevented ■ and permitting light generated within the device to penetrate through the element surface over a wide range of incident angles.
Preferably the securing is effected by use of a sufficiently thin layer of optically transparent adhesive. This will generally require specialised or adapted tooling and a controlled pressure.
While shaping of a layer thus secured may be effected after the securing step, it is preferably effected prior thereto.
The refractive index of the material of the focussing element preferably has a refractive index differing from the adjacent LED layer by no more than 1, more preferably no more than 0.5, even more preferably no more than 0.3, and most preferably, it equals that of the adjacent LED layer, e.g. by being made of the same material.
Further details and advantages of the invention will become apparent upon a reading of the appended claims, to which the reader is referred, and upon a consideration of the following description of embodiments of the invention made with reference to the accompanying drawings, in which:
Figure 1 shows an embodiment of the invention in diagrammatic cross-section; and
Figure 2 is a ray tracing for a typical dome structure with base height of r/n.
Figure 1 shows a first arrangement according to the invention in which an indium antimonide or indium antimonide alloy LED mesa 1 is formed upon (and normally integrally with) a semiconductor substrate 2, the latter in turn being supported upon a further substrate 3. The flat surface 4 of a germanium lens 5 is secured to a flat light emitting surface of the diode mesa 1 by a layer 6 of optically transparent glue, using tooling and a controlled pressure to ensure that the glue thickness is less than one quarter of the LED wavelength inside the material. As shown, the lens 5 comprises a convex (hemispherical) portion 7 with a radius of curvature of 2.5 mm, and a right cylindrical base portion 8 which is 0.5 mm high (thick), allowing the light from the LED to be retransmitted without total internal reflection restrictions. The LED is coaxial with the lens 5 and has a diameter of up to 1 mm.
Spherical aberration of lens 5 can be avoided only for point sources on the axis, and for all sources of finite dimension the spherical aberration is significant. In the latter case, as in Figure 1, both the apparent source position and its apparent area are determined by the circle of least confusion, which depends strongly on the actual emitting area and also on the thickness h. It should therefore be clear that the geometry normally needs to be optimised with respect to the brightness of the LED 1 and the angular distribution of light therefrom.
Optimisation of the height h for a particular LED light emitting area is effected by ray tracing the position and diameter of the circle of least confusion, using ray tracing software.
The surface of the lens 5 will normally be provided with an antireflection coating.
Claims
1. A light emitting diode device provided on its light emitting surface with a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than 0.95r/n, where n is the real refractive index of the lens.
2. A device according to claim 1 wherein h is no greater than 0.85r/n.
3. A device according to claim 1 or claim 2 wherein h is no less than 0.3r/n.
4. A light emitting diode device provided on its light emitting surface with a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than (r/n)(l - d/2r) where d is the LED diameter and n is the real refractive index of the lens.
5. A device according to any preceding claim wherein the refractive index of the material of the lens has a refractive index differing from the adjacent LED layer by no more than 1.
6. A device according to claim 4 wherein the refractive index n of the material of the focussing element differs from that the adjacent LED layer by no more than 0.5.
7. A device according to claim 4 wherein the refractive index n of the material of the lens is substantially equal to that of the adjacent LED layer.
8. A device according to claim 7 wherein the material of the lens is substantially the same as that that of the adjacent LED layer
9. A device according to any preceding claim wherein the LED emits infra-red light.
10. A device according to claim 9 wherein the LED emits at a wavelength within the 3 to 12 micron range.
11. A device according to any preceding claim wherein the LED is formed of indium antimonide or an indium antimonide alloy.
12. A device according to any one of claims 1 to 7, 9 to 11 wherein the focussing element is formed of germanium.
13. A method of making a light emitting diode device, comprising forming a light emitting diode on or in a substrate, and depositing a further layer on the outer surface of the diode, said further layer providing a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than 0.95r/n, where n is the real refractive index of the lens.
14. A method of making a light emitting diode device, comprising forming a light emitting diode on or in a substrate, and depositing a further layer on the outer surface of the diode, said further layer providing a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than (r/n)(l - d/2r) where d is the LED diameter and n is the real refractive index of the hypersphere.
15. A method according to claim 13 or claim 14 wherein said further layer is shaped to provide said lens subsequent to the formation of the light emitting diode.
16. A method of adapting a light emitting diode formed in or on a substrate comprising securing a further layer on the outer surface of the diode, said further layer providing a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than 0.95r/n, where n is the real refractive index of the lens.
17. A method of adapting a light emitting diode formed in or on a substrate comprising securing a further layer on the outer surface of the diode, said further layer providing a lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than (r/n)(l - d/2r) where d is the LED diameter and n is the real refractive index of the hypersphere.
18. A method according to claim 16 or claim 17 wherein the further layer is shaped to provide said lens prior to said securing step.
19. A lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than 0.95r/n, where n is the real refractive index of the lens.
20. A lens comprising a substantially hemispherical portion of radius r on a base portion of height h, where h is no greater than (r/n)(l - d/2r) where d is the LED diameter and n is the real refractive index of the hypersphere.
21. An optical element according to claim 19 or claim 20 wherein the hypersphere is made of germanium.
22. A light emitting diode substantially as hereinbefore described with reference to the accompanying drawing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2001270810A AU2001270810A1 (en) | 2000-07-19 | 2001-07-18 | Light emitting diode with lens |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0017659.4 | 2000-07-19 | ||
| GB0017659A GB0017659D0 (en) | 2000-07-19 | 2000-07-19 | Light emitting diode with lens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2002007228A1 true WO2002007228A1 (en) | 2002-01-24 |
Family
ID=9895910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB2001/003155 WO2002007228A1 (en) | 2000-07-19 | 2001-07-18 | Light emitting diode with lens |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2001270810A1 (en) |
| GB (1) | GB0017659D0 (en) |
| WO (1) | WO2002007228A1 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003071221A3 (en) * | 2002-02-23 | 2003-12-24 | Diehl Munitionssysteme Gmbh | Proximity sensor, especially for ignition of the warhead of a shell directed against an approaching missile |
| WO2006049805A1 (en) * | 2004-10-29 | 2006-05-11 | 3M Innovative Properties Company | High brightness led package with compound optical element(s) |
| CN101513120A (en) * | 2006-08-03 | 2009-08-19 | 英特曼帝克司公司 | LED lighting arrangement including light emitting phosphor |
| US7798678B2 (en) | 2005-12-30 | 2010-09-21 | 3M Innovative Properties Company | LED with compound encapsulant lens |
| CN101956909A (en) * | 2009-07-17 | 2011-01-26 | 奇美电子股份有限公司 | Light source, backlight module using same, and liquid crystal display device using same |
| US8067884B2 (en) | 2006-08-03 | 2011-11-29 | Intematrix Corporation | LED lighting arrangement including a substantially spherical optical component having a surface partially coated with a light emitting phosphor |
| US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
| US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
| US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
| US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1586188A (en) * | 1977-05-23 | 1981-03-18 | Philips Nv | Optical system |
| US4301461A (en) * | 1978-12-22 | 1981-11-17 | Canon Kabushiki Kaisha | Light emitting diode |
| US4339689A (en) * | 1979-01-29 | 1982-07-13 | Matsushita Electric Industrial Co., Ltd. | Light emitting diode and method of making the same |
| US4830454A (en) * | 1987-11-06 | 1989-05-16 | Siemens Aktiengesellschaft | Spherical planoconvex lens for optically coupling a semiconductor laser to an optical waveguide |
| EP0415640A2 (en) * | 1989-08-29 | 1991-03-06 | Hewlett-Packard Company | High efficiency lamp or light accepter |
| EP0481552A1 (en) * | 1990-10-17 | 1992-04-22 | Gec-Marconi Limited | Infrared detector devices |
| US5685919A (en) * | 1995-03-27 | 1997-11-11 | Agency Of Industrial Science & Technology | Method and device for improved photoelectric conversion |
| US5786665A (en) * | 1995-05-23 | 1998-07-28 | Sharp Kabushiki Kaisha | Plane-shaped lighting device and a display using such a device |
-
2000
- 2000-07-19 GB GB0017659A patent/GB0017659D0/en not_active Ceased
-
2001
- 2001-07-18 WO PCT/GB2001/003155 patent/WO2002007228A1/en active Application Filing
- 2001-07-18 AU AU2001270810A patent/AU2001270810A1/en not_active Abandoned
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1586188A (en) * | 1977-05-23 | 1981-03-18 | Philips Nv | Optical system |
| US4301461A (en) * | 1978-12-22 | 1981-11-17 | Canon Kabushiki Kaisha | Light emitting diode |
| US4339689A (en) * | 1979-01-29 | 1982-07-13 | Matsushita Electric Industrial Co., Ltd. | Light emitting diode and method of making the same |
| US4830454A (en) * | 1987-11-06 | 1989-05-16 | Siemens Aktiengesellschaft | Spherical planoconvex lens for optically coupling a semiconductor laser to an optical waveguide |
| EP0415640A2 (en) * | 1989-08-29 | 1991-03-06 | Hewlett-Packard Company | High efficiency lamp or light accepter |
| EP0481552A1 (en) * | 1990-10-17 | 1992-04-22 | Gec-Marconi Limited | Infrared detector devices |
| US5685919A (en) * | 1995-03-27 | 1997-11-11 | Agency Of Industrial Science & Technology | Method and device for improved photoelectric conversion |
| US5786665A (en) * | 1995-05-23 | 1998-07-28 | Sharp Kabushiki Kaisha | Plane-shaped lighting device and a display using such a device |
Non-Patent Citations (2)
| Title |
|---|
| "PREPARATION AND PROPERTIES OF MONOLITHICALLY INTEGRATED LENSES ON INGAASP/INP LIGHT-EMITTING DIODES", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 18, no. 19, 1982, pages 831 - 832, XP000885201, ISSN: 0013-5194 * |
| BOUCHUT P ET AL: "HIGH-EFFICIENCY INFRARED LIGHT EMITTING DIODES MADE IN LIQUID PHASE EPITAXY AND MOLECULAR BEAM EPITAXY HGCDTE LAYERS", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 9, no. 3, 1 May 1991 (1991-05-01), pages 1794 - 1798, XP000222588, ISSN: 0734-211X * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003071221A3 (en) * | 2002-02-23 | 2003-12-24 | Diehl Munitionssysteme Gmbh | Proximity sensor, especially for ignition of the warhead of a shell directed against an approaching missile |
| WO2006049805A1 (en) * | 2004-10-29 | 2006-05-11 | 3M Innovative Properties Company | High brightness led package with compound optical element(s) |
| US7304425B2 (en) | 2004-10-29 | 2007-12-04 | 3M Innovative Properties Company | High brightness LED package with compound optical element(s) |
| US7798678B2 (en) | 2005-12-30 | 2010-09-21 | 3M Innovative Properties Company | LED with compound encapsulant lens |
| US8067884B2 (en) | 2006-08-03 | 2011-11-29 | Intematrix Corporation | LED lighting arrangement including a substantially spherical optical component having a surface partially coated with a light emitting phosphor |
| CN101513120A (en) * | 2006-08-03 | 2009-08-19 | 英特曼帝克司公司 | LED lighting arrangement including light emitting phosphor |
| US9045688B2 (en) | 2006-08-03 | 2015-06-02 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
| US9595644B2 (en) | 2006-08-03 | 2017-03-14 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
| CN101956909A (en) * | 2009-07-17 | 2011-01-26 | 奇美电子股份有限公司 | Light source, backlight module using same, and liquid crystal display device using same |
| US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
| US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
| US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
| US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0017659D0 (en) | 2000-09-06 |
| AU2001270810A1 (en) | 2002-01-30 |
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