WO2001080287A3 - Process for fabricating thin film transistors - Google Patents

Process for fabricating thin film transistors Download PDF

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Publication number
WO2001080287A3
WO2001080287A3 PCT/US2001/012429 US0112429W WO0180287A3 WO 2001080287 A3 WO2001080287 A3 WO 2001080287A3 US 0112429 W US0112429 W US 0112429W WO 0180287 A3 WO0180287 A3 WO 0180287A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
thin film
film transistors
fabricating thin
silicon
Prior art date
Application number
PCT/US2001/012429
Other languages
French (fr)
Other versions
WO2001080287A2 (en
Inventor
Kevin L Denis
Yu Chen
Paul S Drzaic
Joseph M Jacobson
Peter T Kazlas
Original Assignee
E Ink Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E Ink Corp filed Critical E Ink Corp
Priority to EP01927094A priority Critical patent/EP1275156B1/en
Priority to AT01927094T priority patent/ATE438927T1/en
Priority to DE60139463T priority patent/DE60139463D1/en
Priority to AU2001253575A priority patent/AU2001253575A1/en
Priority to JP2001577586A priority patent/JP2003531487A/en
Publication of WO2001080287A2 publication Critical patent/WO2001080287A2/en
Publication of WO2001080287A3 publication Critical patent/WO2001080287A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support

Abstract

Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300 °C during the processes used to form the transistor, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.
PCT/US2001/012429 2000-04-18 2001-04-17 Process for fabricating thin film transistors WO2001080287A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP01927094A EP1275156B1 (en) 2000-04-18 2001-04-17 Process for fabricating thin film transistors
AT01927094T ATE438927T1 (en) 2000-04-18 2001-04-17 PROCESS FOR PRODUCING THIN FILM TRANSISTORS
DE60139463T DE60139463D1 (en) 2000-04-18 2001-04-17 PROCESS FOR THE MANUFACTURE OF THIN FILM TRANSISTORS
AU2001253575A AU2001253575A1 (en) 2000-04-18 2001-04-17 Process for fabricating thin film transistors
JP2001577586A JP2003531487A (en) 2000-04-18 2001-04-17 Process for manufacturing thin film transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19773100P 2000-04-18 2000-04-18
US60/197,731 2000-04-18

Publications (2)

Publication Number Publication Date
WO2001080287A2 WO2001080287A2 (en) 2001-10-25
WO2001080287A3 true WO2001080287A3 (en) 2002-05-23

Family

ID=22730530

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/012429 WO2001080287A2 (en) 2000-04-18 2001-04-17 Process for fabricating thin film transistors

Country Status (9)

Country Link
US (2) US6825068B2 (en)
EP (1) EP1275156B1 (en)
JP (1) JP2003531487A (en)
KR (1) KR100767233B1 (en)
CN (1) CN1237623C (en)
AT (1) ATE438927T1 (en)
AU (1) AU2001253575A1 (en)
DE (1) DE60139463D1 (en)
WO (1) WO2001080287A2 (en)

Families Citing this family (197)

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