WO2001077241A3 - Composition for metal cmp with low dishing and overpolish insensitivity - Google Patents

Composition for metal cmp with low dishing and overpolish insensitivity Download PDF

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Publication number
WO2001077241A3
WO2001077241A3 PCT/US2001/011075 US0111075W WO0177241A3 WO 2001077241 A3 WO2001077241 A3 WO 2001077241A3 US 0111075 W US0111075 W US 0111075W WO 0177241 A3 WO0177241 A3 WO 0177241A3
Authority
WO
WIPO (PCT)
Prior art keywords
overpolish
insensitivity
composition
metal cmp
low dishing
Prior art date
Application number
PCT/US2001/011075
Other languages
French (fr)
Other versions
WO2001077241A2 (en
Inventor
Lizhong Sun
Shijian Li
Fred C Redeker
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2001077241A2 publication Critical patent/WO2001077241A2/en
Publication of WO2001077241A3 publication Critical patent/WO2001077241A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Abstract

Polishing compositions for metal CMP with reduced dishing and overpolish insensitivity are formulated to have a low static etching rate at high temperatures, e.g., higher than 50 °C. Embodiments include abrasive-free polishing compositions comprising one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, one or more acids to achieve a pH of about 3 to about 10 and deionized water.
PCT/US2001/011075 2000-04-05 2001-04-05 Composition for metal cmp with low dishing and overpolish insensitivity WO2001077241A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54377700A 2000-04-05 2000-04-05
US09/543,777 2000-04-05

Publications (2)

Publication Number Publication Date
WO2001077241A2 WO2001077241A2 (en) 2001-10-18
WO2001077241A3 true WO2001077241A3 (en) 2002-02-07

Family

ID=24169523

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/011075 WO2001077241A2 (en) 2000-04-05 2001-04-05 Composition for metal cmp with low dishing and overpolish insensitivity

Country Status (3)

Country Link
US (1) US20020148169A1 (en)
TW (1) TW574346B (en)
WO (1) WO2001077241A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432826B1 (en) * 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US20070290166A1 (en) * 2001-03-14 2007-12-20 Liu Feng Q Method and composition for polishing a substrate
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
JP2005518670A (en) * 2002-02-26 2005-06-23 アプライド　マテリアルズ　インコーポレイテッド Method and composition for polishing a substrate
KR100627510B1 (en) * 2002-12-30 2006-09-22 주식회사 하이닉스반도체 CMP slurry for nitride
JP4394477B2 (en) * 2003-03-27 2010-01-06 Ｄｏｗａホールディングス株式会社 Method for producing metal / ceramic bonding substrate
US7210988B2 (en) * 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
TW200720493A (en) * 2005-10-31 2007-06-01 Applied Materials Inc Electrochemical method for ecmp polishing pad conditioning
US20070158207A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Methods for electrochemical processing with pre-biased cells
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998049723A1 (en) * 1997-04-30 1998-11-05 Minnesota Mining And Manufacturing Company Method of planarizing the upper surface of a semiconductor wafer
WO2000000561A1 (en) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998049723A1 (en) * 1997-04-30 1998-11-05 Minnesota Mining And Manufacturing Company Method of planarizing the upper surface of a semiconductor wafer
WO2000000561A1 (en) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates

Also Published As

Publication number Publication date
TW574346B (en) 2004-02-01
US20020148169A1 (en) 2002-10-17
WO2001077241A2 (en) 2001-10-18

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