WO2001044536A3 - Sputtering targets and method of making same - Google Patents
Sputtering targets and method of making same Download PDFInfo
- Publication number
- WO2001044536A3 WO2001044536A3 PCT/US2000/033997 US0033997W WO0144536A3 WO 2001044536 A3 WO2001044536 A3 WO 2001044536A3 US 0033997 W US0033997 W US 0033997W WO 0144536 A3 WO0144536 A3 WO 0144536A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- making same
- sputtering targets
- manufacture
- high quality
- sputtering target
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C23/00—Extruding metal; Impact extrusion
- B21C23/001—Extruding metal; Impact extrusion to improve the material properties, e.g. lateral extrusion
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020027007767A KR20020074171A (en) | 1999-12-16 | 2000-12-15 | High-strenth sputtering targets and method of making same |
EP00984408A EP1242645A2 (en) | 1999-12-16 | 2000-12-15 | Sputtering targets and method of making same |
JP2001545613A JP2003517101A (en) | 1999-12-16 | 2000-12-15 | High strength sputtering target and method for manufacturing the same |
AU21030/01A AU2103001A (en) | 1999-12-16 | 2000-12-15 | High-strength sputtering targets and method of making same |
HK03101933.5A HK1050032A1 (en) | 1999-12-16 | 2003-03-17 | Sputtering targets and method of making same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/465,492 US6878250B1 (en) | 1999-12-16 | 1999-12-16 | Sputtering targets formed from cast materials |
US09/465,492 | 1999-12-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001044536A2 WO2001044536A2 (en) | 2001-06-21 |
WO2001044536A3 true WO2001044536A3 (en) | 2002-01-03 |
Family
ID=23848035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/033997 WO2001044536A2 (en) | 1999-12-16 | 2000-12-15 | Sputtering targets and method of making same |
Country Status (9)
Country | Link |
---|---|
US (5) | US6878250B1 (en) |
EP (1) | EP1242645A2 (en) |
JP (1) | JP2003517101A (en) |
KR (1) | KR20020074171A (en) |
CN (1) | CN1592797A (en) |
AU (1) | AU2103001A (en) |
HK (1) | HK1050032A1 (en) |
TW (1) | TW583327B (en) |
WO (1) | WO2001044536A2 (en) |
Families Citing this family (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US20010047838A1 (en) * | 2000-03-28 | 2001-12-06 | Segal Vladimir M. | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
US20030227068A1 (en) * | 2001-05-31 | 2003-12-11 | Jianxing Li | Sputtering target |
US6833058B1 (en) * | 2000-10-24 | 2004-12-21 | Honeywell International Inc. | Titanium-based and zirconium-based mixed materials and sputtering targets |
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US7081148B2 (en) * | 2001-09-18 | 2006-07-25 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
US8562664B2 (en) * | 2001-10-25 | 2013-10-22 | Advanced Cardiovascular Systems, Inc. | Manufacture of fine-grained material for use in medical devices |
US6605199B2 (en) * | 2001-11-14 | 2003-08-12 | Praxair S.T. Technology, Inc. | Textured-metastable aluminum alloy sputter targets and method of manufacture |
US6883359B1 (en) * | 2001-12-20 | 2005-04-26 | The Texas A&M University System | Equal channel angular extrusion method |
US6976380B1 (en) * | 2002-01-24 | 2005-12-20 | The Texas A&M University System | Developing the texture of a material |
US20040256218A1 (en) * | 2002-05-31 | 2004-12-23 | Glass Howard L. | Thin films and methods of forming thin films utilizing ECAE-targets |
JP3882141B2 (en) * | 2002-06-13 | 2007-02-14 | 日鉱金属株式会社 | Vapor growth apparatus and vapor growth method |
US20040016635A1 (en) * | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
US7235143B2 (en) * | 2002-08-08 | 2007-06-26 | Praxair S.T. Technology, Inc. | Controlled-grain-precious metal sputter targets |
US20040123920A1 (en) * | 2002-10-08 | 2004-07-01 | Thomas Michael E. | Homogenous solid solution alloys for sputter-deposited thin films |
CN1771350A (en) * | 2003-04-01 | 2006-05-10 | 株式会社日矿材料 | Tantalum spattering target and method of manufacturing the same |
US7191630B2 (en) * | 2003-07-25 | 2007-03-20 | Engineered Performance Materials Co., Llc | Method and apparatus for equal channel angular extrusion of flat billets |
US20050155677A1 (en) * | 2004-01-08 | 2005-07-21 | Wickersham Charles E.Jr. | Tantalum and other metals with (110) orientation |
WO2006001976A2 (en) * | 2004-06-15 | 2006-01-05 | Tosoh Smd, Inc. | High purity target manufacturing methods |
US7472576B1 (en) | 2004-11-17 | 2009-01-06 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University | Nanometrology device standards for scanning probe microscopes and processes for their fabrication and use |
US7998287B2 (en) * | 2005-02-10 | 2011-08-16 | Cabot Corporation | Tantalum sputtering target and method of fabrication |
TW200710243A (en) * | 2005-05-02 | 2007-03-16 | Honeywell Int Inc | Target assemblies, targets, backing plates, and methods of target cooling |
CN1298450C (en) * | 2005-06-16 | 2007-02-07 | 上海交通大学 | Broken line type extrusion shaping apparatus |
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US20070051623A1 (en) * | 2005-09-07 | 2007-03-08 | Howmet Corporation | Method of making sputtering target and target |
US7699946B2 (en) * | 2005-09-07 | 2010-04-20 | Los Alamos National Security, Llc | Preparation of nanostructured materials having improved ductility |
AT8697U1 (en) | 2005-10-14 | 2006-11-15 | Plansee Se | TUBE TARGET |
US20070169853A1 (en) * | 2006-01-23 | 2007-07-26 | Heraeus, Inc. | Magnetic sputter targets manufactured using directional solidification |
US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
US20080078268A1 (en) | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
CN100421830C (en) * | 2007-05-09 | 2008-10-01 | 中国科学院金属研究所 | Method for preparing lamellar composite material of heterogeneic alloy |
US8702919B2 (en) * | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
RU2383654C1 (en) * | 2008-10-22 | 2010-03-10 | Государственное образовательное учреждение высшего профессионального образования "Уфимский государственный авиационный технический университет" | Nano-structural technically pure titanium for bio-medicine and method of producing wire out of it |
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WO2010051040A1 (en) * | 2008-11-03 | 2010-05-06 | Tosoh Smd, Inc. | Method of making a sputter target and sputter targets made thereby |
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WO2010134417A1 (en) * | 2009-05-22 | 2010-11-25 | Jx日鉱日石金属株式会社 | Tantalum sputtering target |
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US9002499B2 (en) * | 2012-03-20 | 2015-04-07 | GM Global Technology Operations LLC | Methods for determining a recovery state of a metal alloy |
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US9188514B1 (en) * | 2013-05-23 | 2015-11-17 | The United States Of America As Represented By The Secretary Of The Navy | System and method for producing a sample having a monotonic doping gradient of a diffusive constituent or interstitial atom or molecule |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5413650A (en) * | 1990-07-30 | 1995-05-09 | Alcan International Limited | Ductile ultra-high strength aluminium alloy components |
US5456815A (en) * | 1993-04-08 | 1995-10-10 | Japan Energy Corporation | Sputtering targets of high-purity aluminum or alloy thereof |
US5513512A (en) * | 1994-06-17 | 1996-05-07 | Segal; Vladimir | Plastic deformation of crystalline materials |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
US5826456A (en) * | 1995-09-14 | 1998-10-27 | Ykk Corporation | Method for extrusion of aluminum alloy and aluminum alloy material of high strength and high toughness obtained thereby |
EP0882813A1 (en) * | 1997-06-02 | 1998-12-09 | Japan Energy Corporation | High-purity copper sputtering targets and thin films |
US5850755A (en) * | 1995-02-08 | 1998-12-22 | Segal; Vladimir M. | Method and apparatus for intensive plastic deformation of flat billets |
US5993575A (en) * | 1996-11-05 | 1999-11-30 | Sony Corporation | Method for fabricating randomly oriented aluminum alloy sputting targets with fine grains and fine precipitates |
Family Cites Families (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2372A (en) * | 1841-11-25 | Machine foe | ||
US3197402A (en) | 1957-11-20 | 1965-07-27 | Ruskin Dan | Methods for the rapid recovery of heavy water and other products |
US3497402A (en) * | 1966-02-03 | 1970-02-24 | Nat Res Corp | Stabilized grain-size tantalum alloy |
US3653981A (en) | 1968-10-24 | 1972-04-04 | Nippon Steel Corp | Method for making ferritic stainless steel sheet having excellent workability |
US3616282A (en) * | 1968-11-14 | 1971-10-26 | Hewlett Packard Co | Method of producing thin-film circuit elements |
US4000055A (en) * | 1972-01-14 | 1976-12-28 | Western Electric Company, Inc. | Method of depositing nitrogen-doped beta tantalum |
BE795763A (en) | 1972-02-22 | 1973-08-22 | Westinghouse Electric Corp | FERROUS ALLOYS AND METHODS FOR MAKING SUCH ALLOYS |
DE2429434B2 (en) * | 1974-06-19 | 1979-10-04 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of resistors and capacitors in thin-film circuits |
DE3142541C2 (en) * | 1981-10-27 | 1986-07-31 | Demetron Gesellschaft für Elektronik-Werkstoffe mbH, 6540 Hanau | Multi-component alloy for targets in cathode sputtering systems |
US4374717A (en) * | 1981-11-05 | 1983-02-22 | General Motors Corporation | Plasma polymerized interfacial coatings for improved adhesion of sputtered bright metal on plastic |
DE3246361A1 (en) | 1982-02-27 | 1983-09-08 | Philips Patentverwaltung Gmbh, 2000 Hamburg | CARBON-CONTAINING SLIP LAYER |
JPS58157917A (en) | 1982-03-15 | 1983-09-20 | Kawasaki Steel Corp | Manufacture of unidirectional silicon steel plate with superior magnetic characteristic |
US4589932A (en) * | 1983-02-03 | 1986-05-20 | Aluminum Company Of America | Aluminum 6XXX alloy products of high strength and toughness having stable response to high temperature artificial aging treatments and method for producing |
JPS59227992A (en) | 1983-06-08 | 1984-12-21 | Agency Of Ind Science & Technol | Lubricant for plastic working |
JPS6066425A (en) | 1983-09-22 | 1985-04-16 | Nippon Telegr & Teleph Corp <Ntt> | High-purity molybdenum target and high-purity molybdenum silicide target for lsi electrode and manufacture thereof |
US4663120A (en) | 1985-04-15 | 1987-05-05 | Gte Products Corporation | Refractory metal silicide sputtering target |
JPH0621346B2 (en) | 1986-06-11 | 1994-03-23 | 日本鉱業株式会社 | Method for manufacturing high-purity metal tantalum target |
US4889745A (en) | 1986-11-28 | 1989-12-26 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Method for reactive preparation of a shaped body of inorganic compound of metal |
US4844786A (en) * | 1987-02-26 | 1989-07-04 | Fuji Photo Film Co., Ltd. | Means for electrophoresis |
JPS63216966A (en) | 1987-03-06 | 1988-09-09 | Toshiba Corp | Target for sputtering |
DE3712281A1 (en) | 1987-04-10 | 1988-10-27 | Heraeus Gmbh W C | METHOD FOR PRODUCING HIGHLY DUCTILE TANTALE SEMI-FINISHED PRODUCTS |
US4762558A (en) | 1987-05-15 | 1988-08-09 | Rensselaer Polytechnic Institute | Production of reactive sintered nickel aluminide material |
US4883721A (en) * | 1987-07-24 | 1989-11-28 | Guardian Industries Corporation | Multi-layer low emissivity thin film coating |
US4960163A (en) * | 1988-11-21 | 1990-10-02 | Aluminum Company Of America | Fine grain casting by mechanical stirring |
US5468401A (en) | 1989-06-16 | 1995-11-21 | Chem-Trend, Incorporated | Carrier-free metalworking lubricant and method of making and using same |
US5074907A (en) | 1989-08-16 | 1991-12-24 | General Electric Company | Method for developing enhanced texture in titanium alloys, and articles made thereby |
JPH0735586B2 (en) | 1989-08-25 | 1995-04-19 | 住友金属工業株式会社 | Colored ferritic stainless steel and manufacturing method thereof |
JP3031474B2 (en) | 1989-12-26 | 2000-04-10 | 株式会社東芝 | Method for manufacturing high-purity tantalum material, tantalum target, thin film, and semiconductor device |
US5194101A (en) | 1990-03-16 | 1993-03-16 | Westinghouse Electric Corp. | Zircaloy-4 processing for uniform and nodular corrosion resistance |
WO1991018125A1 (en) | 1990-05-15 | 1991-11-28 | Kabushiki Kaisha Toshiba | Sputtering target and production thereof |
WO1992001080A1 (en) | 1990-07-03 | 1992-01-23 | Tosoh Smd, Inc. | Improved sputter target for coating compact discs, methods of use thereof, and methods of manufacture of the targets |
US5087297A (en) | 1991-01-17 | 1992-02-11 | Johnson Matthey Inc. | Aluminum target for magnetron sputtering and method of making same |
US5171379A (en) | 1991-05-15 | 1992-12-15 | Cabot Corporation | Tantalum base alloys |
US5282946A (en) | 1991-08-30 | 1994-02-01 | Mitsubishi Materials Corporation | Platinum-cobalt alloy sputtering target and method for manufacturing same |
US5231306A (en) | 1992-01-31 | 1993-07-27 | Micron Technology, Inc. | Titanium/aluminum/nitrogen material for semiconductor devices |
JPH05214523A (en) | 1992-02-05 | 1993-08-24 | Toshiba Corp | Sputtering target and its manufacture |
US5330701A (en) | 1992-02-28 | 1994-07-19 | Xform, Inc. | Process for making finely divided intermetallic |
JP3338476B2 (en) | 1992-06-29 | 2002-10-28 | 住友チタニウム株式会社 | Method for producing metal Ti target for sputtering |
JPH0693400A (en) | 1992-09-16 | 1994-04-05 | Nkk Corp | Production of electrodeposition drum made of titanium |
US5693203A (en) | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
TW234767B (en) | 1992-09-29 | 1994-11-21 | Nippon En Kk | |
JP3197640B2 (en) | 1992-11-30 | 2001-08-13 | 朝日興業株式会社 | Bubble generator |
US5415829A (en) * | 1992-12-28 | 1995-05-16 | Nikko Kyodo Co., Ltd. | Sputtering target |
JPH06256919A (en) | 1993-03-01 | 1994-09-13 | Seiko Instr Inc | Method for working titanium alloy |
JPH06264232A (en) | 1993-03-12 | 1994-09-20 | Nikko Kinzoku Kk | Ta sputtering target and its production |
JP2839814B2 (en) | 1993-03-16 | 1998-12-16 | 新日本製鐵株式会社 | Tension control method for continuous hot rolling mill |
US5400633A (en) | 1993-09-03 | 1995-03-28 | The Texas A&M University System | Apparatus and method for deformation processing of metals, ceramics, plastics and other materials |
JP3545787B2 (en) | 1993-09-10 | 2004-07-21 | Tdk株式会社 | Al alloy sputtering target and method of manufacturing the same |
US5772860A (en) | 1993-09-27 | 1998-06-30 | Japan Energy Corporation | High purity titanium sputtering targets |
US5677015A (en) * | 1994-03-17 | 1997-10-14 | Sony Corporation | High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tantalum, and semiconductor device using the same |
FI100422B (en) * | 1994-07-11 | 1997-11-28 | Metso Paper Inc | Preparation of roller |
JPH0864554A (en) | 1994-08-23 | 1996-03-08 | Mitsubishi Materials Corp | Sputtering target material for forming thin film of thin film transistor |
JPH08100255A (en) | 1994-09-30 | 1996-04-16 | Mitsubishi Materials Corp | Sputtering target material for forming thin film of thin film transistor |
JPH08134606A (en) | 1994-11-10 | 1996-05-28 | Nippon Steel Corp | Nonoriented silicon steel sheet having high magnetic flux density after stress relief annealing |
JP3506782B2 (en) | 1994-11-24 | 2004-03-15 | オリンパス株式会社 | Manufacturing method of optical thin film |
JP2984778B2 (en) | 1995-02-27 | 1999-11-29 | 株式会社住友シチックス尼崎 | Forging method of high purity titanium material |
JP3413782B2 (en) | 1995-03-31 | 2003-06-09 | 日立金属株式会社 | Titanium target for sputtering and method for producing the same |
US5600989A (en) | 1995-06-14 | 1997-02-11 | Segal; Vladimir | Method of and apparatus for processing tungsten heavy alloys for kinetic energy penetrators |
US5673581A (en) | 1995-10-03 | 1997-10-07 | Segal; Vladimir | Method and apparatus for forming thin parts of large length and width |
JP3343774B2 (en) | 1995-10-27 | 2002-11-11 | トピー工業株式会社 | Manufacturing method of cast aluminum wheel |
JP3970323B2 (en) | 1996-06-05 | 2007-09-05 | デュラセル、インコーポレーテッド | Improved production of lithiated lithium manganese oxide spinel. |
JP3713332B2 (en) | 1996-06-21 | 2005-11-09 | 同和鉱業株式会社 | Single crystal copper target and manufacturing method thereof |
JP3867328B2 (en) | 1996-12-04 | 2007-01-10 | ソニー株式会社 | Sputtering target and manufacturing method thereof |
JPH10158829A (en) | 1996-12-04 | 1998-06-16 | Sony Corp | Production of assembly of sputtering target |
US5994181A (en) * | 1997-05-19 | 1999-11-30 | United Microelectronics Corp. | Method for forming a DRAM cell electrode |
US5993621A (en) | 1997-07-11 | 1999-11-30 | Johnson Matthey Electronics, Inc. | Titanium sputtering target |
US6569270B2 (en) | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
JPH1180942A (en) | 1997-09-10 | 1999-03-26 | Japan Energy Corp | Ta sputtering target, its production and assembled body |
EP0903412A3 (en) | 1997-09-22 | 2001-01-24 | National Research Institute For Metals | Ultra-fine texture steel and method for producing it |
US6001227A (en) | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
US6139701A (en) | 1997-11-26 | 2000-10-31 | Applied Materials, Inc. | Copper target for sputter deposition |
US6348139B1 (en) | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
US6193821B1 (en) | 1998-08-19 | 2001-02-27 | Tosoh Smd, Inc. | Fine grain tantalum sputtering target and fabrication process |
US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
US6123896A (en) | 1999-01-29 | 2000-09-26 | Ceracon, Inc. | Texture free ballistic grade tantalum product and production method |
US6192969B1 (en) * | 1999-03-22 | 2001-02-27 | Asarco Incorporated | Casting of high purity oxygen free copper |
US6113761A (en) | 1999-06-02 | 2000-09-05 | Johnson Matthey Electronics, Inc. | Copper sputtering target assembly and method of making same |
US6478902B2 (en) * | 1999-07-08 | 2002-11-12 | Praxair S.T. Technology, Inc. | Fabrication and bonding of copper sputter targets |
US6521173B2 (en) | 1999-08-19 | 2003-02-18 | H.C. Starck, Inc. | Low oxygen refractory metal powder for powder metallurgy |
US6391163B1 (en) * | 1999-09-27 | 2002-05-21 | Applied Materials, Inc. | Method of enhancing hardness of sputter deposited copper films |
US6423161B1 (en) | 1999-10-15 | 2002-07-23 | Honeywell International Inc. | High purity aluminum materials |
AU1609501A (en) * | 1999-11-24 | 2001-06-04 | Honeywell International, Inc. | Physical vapor deposition targets, conductive integrated circuit metal alloy interconnections, electroplating anodes, and metal alloys for use as a conductive interconnection in an integrated circuit |
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US6454994B1 (en) | 2000-08-28 | 2002-09-24 | Honeywell International Inc. | Solids comprising tantalum, strontium and silicon |
US6946039B1 (en) | 2000-11-02 | 2005-09-20 | Honeywell International Inc. | Physical vapor deposition targets, and methods of fabricating metallic materials |
US6896748B2 (en) * | 2002-07-18 | 2005-05-24 | Praxair S.T. Technology, Inc. | Ultrafine-grain-copper-base sputter targets |
-
1999
- 1999-12-16 US US09/465,492 patent/US6878250B1/en not_active Expired - Fee Related
-
2000
- 2000-12-15 JP JP2001545613A patent/JP2003517101A/en not_active Withdrawn
- 2000-12-15 CN CNA008189625A patent/CN1592797A/en active Pending
- 2000-12-15 WO PCT/US2000/033997 patent/WO2001044536A2/en not_active Application Discontinuation
- 2000-12-15 EP EP00984408A patent/EP1242645A2/en not_active Withdrawn
- 2000-12-15 AU AU21030/01A patent/AU2103001A/en not_active Abandoned
- 2000-12-15 KR KR1020027007767A patent/KR20020074171A/en not_active Application Discontinuation
-
2001
- 2001-05-18 TW TW089126996A patent/TW583327B/en not_active IP Right Cessation
- 2001-07-24 US US09/912,476 patent/US6723187B2/en not_active Expired - Fee Related
- 2001-07-24 US US09/912,616 patent/US20020000272A1/en not_active Abandoned
- 2001-07-24 US US09/912,652 patent/US20020007880A1/en not_active Abandoned
-
2003
- 2003-03-17 HK HK03101933.5A patent/HK1050032A1/en unknown
-
2008
- 2008-09-22 US US12/235,427 patent/US7767043B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5413650A (en) * | 1990-07-30 | 1995-05-09 | Alcan International Limited | Ductile ultra-high strength aluminium alloy components |
US5456815A (en) * | 1993-04-08 | 1995-10-10 | Japan Energy Corporation | Sputtering targets of high-purity aluminum or alloy thereof |
US5513512A (en) * | 1994-06-17 | 1996-05-07 | Segal; Vladimir | Plastic deformation of crystalline materials |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
US5850755A (en) * | 1995-02-08 | 1998-12-22 | Segal; Vladimir M. | Method and apparatus for intensive plastic deformation of flat billets |
US5826456A (en) * | 1995-09-14 | 1998-10-27 | Ykk Corporation | Method for extrusion of aluminum alloy and aluminum alloy material of high strength and high toughness obtained thereby |
US5993575A (en) * | 1996-11-05 | 1999-11-30 | Sony Corporation | Method for fabricating randomly oriented aluminum alloy sputting targets with fine grains and fine precipitates |
EP0882813A1 (en) * | 1997-06-02 | 1998-12-09 | Japan Energy Corporation | High-purity copper sputtering targets and thin films |
Non-Patent Citations (3)
Title |
---|
FERRASSE S ET AL: "DEVELOPMENT OF A SUBMICROMETER-GRAINED MICROSTRUCTURE IN ALUMINUM 6061 USING EQUAL CHANNEL ANGULAR EXTRUSION", JOURNAL OF MATERIALS RESEARCH,NEW YORK, NY,US, vol. 12, no. 5, May 1997 (1997-05-01), pages 1253 - 1261, XP001014420, ISSN: 0884-2914 * |
J.E.HATCH: "ALUMINUM", 1984, AMERICAN SOCIETY FOR METALS, US, XP002161802, 143820 * |
MUKAI T ET AL: "Dynamic mechanical properties of a near-nano aluminum alloy processed by equal-channel-angular-extrusion", NANOSTRUCTURED MATERIALS,ELSEVIER, NEW YORK, NY,US, vol. 10, no. 5, July 1998 (1998-07-01), pages 755 - 765, XP004150282, ISSN: 0965-9773 * |
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CN1592797A (en) | 2005-03-09 |
US6878250B1 (en) | 2005-04-12 |
US20020007880A1 (en) | 2002-01-24 |
TW583327B (en) | 2004-04-11 |
WO2001044536A2 (en) | 2001-06-21 |
US6723187B2 (en) | 2004-04-20 |
US20010054457A1 (en) | 2001-12-27 |
US7767043B2 (en) | 2010-08-03 |
US20020000272A1 (en) | 2002-01-03 |
JP2003517101A (en) | 2003-05-20 |
US20090020192A1 (en) | 2009-01-22 |
AU2103001A (en) | 2001-06-25 |
KR20020074171A (en) | 2002-09-28 |
US20100059147A9 (en) | 2010-03-11 |
HK1050032A1 (en) | 2003-06-06 |
EP1242645A2 (en) | 2002-09-25 |
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