WO2001041191A3 - Method and apparatus for forming an oxidized structure on a microelectronic workpiece - Google Patents

Method and apparatus for forming an oxidized structure on a microelectronic workpiece Download PDF

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Publication number
WO2001041191A3
WO2001041191A3 PCT/US2000/041580 US0041580W WO0141191A3 WO 2001041191 A3 WO2001041191 A3 WO 2001041191A3 US 0041580 W US0041580 W US 0041580W WO 0141191 A3 WO0141191 A3 WO 0141191A3
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
assembly
forming
reactor
cathode
Prior art date
Application number
PCT/US2000/041580
Other languages
French (fr)
Other versions
WO2001041191A2 (en
Inventor
Linlin Chen
Thomas L Ritzdorf
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Publication of WO2001041191A2 publication Critical patent/WO2001041191A2/en
Publication of WO2001041191A3 publication Critical patent/WO2001041191A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/005—Apparatus specially adapted for electrolytic conversion coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0032—Processes of manufacture formation of the dielectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Abstract

Apparatus and methods for forming an oxidized structures on a microelectronic workpieces is disclosed. An exemplary reactor assembly (20) includes: contact assembly (85) having plural discrete contact points to workpiece (25); reactor bowl (35) with overflow chamber (40) for holding the anodizing solution; riser tube (45) with interior conduit (50) supplying both electrolyte flow through optical diffuser plate (65) to workpiece (25) and also electrical connection to cathode (55) positioned on cathode support (60); reactor head (30) including stationary assembly (70) and rotor assembly (75) configured to receive, carry, position, and rotate workpiece (25) during processing. Methods include partial anodization of a deposited anodizable material and electrophoretic deposition on the workpiece (25) for forming capacitors and gate electrodes used, for example, in integrated circuit memory cells.
PCT/US2000/041580 1999-10-27 2000-10-25 Method and apparatus for forming an oxidized structure on a microelectronic workpiece WO2001041191A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42850699A 1999-10-27 1999-10-27
US09/428,506 1999-10-27

Publications (2)

Publication Number Publication Date
WO2001041191A2 WO2001041191A2 (en) 2001-06-07
WO2001041191A3 true WO2001041191A3 (en) 2002-01-03

Family

ID=23699180

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/041580 WO2001041191A2 (en) 1999-10-27 2000-10-25 Method and apparatus for forming an oxidized structure on a microelectronic workpiece

Country Status (1)

Country Link
WO (1) WO2001041191A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004020704A1 (en) 2001-08-31 2004-03-11 Semitool, Inc. Apparatus and method for deposition of an electrophoretic emulsion
FR3020642B1 (en) * 2014-04-30 2021-07-02 Turbomeca DEVICE INTENDED FOR IMPLEMENTING AN ANODIZATION TREATMENT
US9679796B2 (en) 2014-10-28 2017-06-13 Globalfoundries Inc. Anodized metal on carrier wafer

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3542654A (en) * 1966-09-16 1970-11-24 Bell Telephone Labor Inc Process of making an rc circuit and calibrating same
US3665260A (en) * 1970-06-01 1972-05-23 Trw Inc Alloy capacitor porous anodes
US3713998A (en) * 1970-10-23 1973-01-30 Western Electric Co Method of and apparatus for the electrochemical treatment of work surfaces
US4224392A (en) * 1977-12-16 1980-09-23 Oswin Harry G Nickel-oxide electrode structure and method of making same
US5134451A (en) * 1989-04-17 1992-07-28 Oki Electric Industry Co., Ltd. MOS semiconductive device
US5185075A (en) * 1990-10-25 1993-02-09 The Alta Group Surface treated titanium/titanium alloy articles and process for producing
US5437777A (en) * 1991-12-26 1995-08-01 Nec Corporation Apparatus for forming a metal wiring pattern of semiconductor devices
US5685968A (en) * 1994-10-14 1997-11-11 Ngk Spark Plug Co., Ltd. Ceramic substrate with thin-film capacitor and method of producing the same
US5893731A (en) * 1997-05-23 1999-04-13 Industrial Technology Research Institute Method for fabricating low cost integrated resistor capacitor combinations
US6008577A (en) * 1996-01-18 1999-12-28 Micron Technology, Inc. Flat panel display with magnetic focusing layer
US6017437A (en) * 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
US6121094A (en) * 1998-07-21 2000-09-19 Advanced Micro Devices, Inc. Method of making a semiconductor device with a multi-level gate structure
US6193859B1 (en) * 1997-11-13 2001-02-27 Novellus Systems, Inc. Electric potential shaping apparatus for holding a semiconductor wafer during electroplating
US6217725B1 (en) * 1994-01-10 2001-04-17 Electroplating Technologies Ltd. Method and apparatus for anodizing
US6228231B1 (en) * 1997-05-29 2001-05-08 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6251236B1 (en) * 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3542654A (en) * 1966-09-16 1970-11-24 Bell Telephone Labor Inc Process of making an rc circuit and calibrating same
US3665260A (en) * 1970-06-01 1972-05-23 Trw Inc Alloy capacitor porous anodes
US3713998A (en) * 1970-10-23 1973-01-30 Western Electric Co Method of and apparatus for the electrochemical treatment of work surfaces
US4224392A (en) * 1977-12-16 1980-09-23 Oswin Harry G Nickel-oxide electrode structure and method of making same
US5134451A (en) * 1989-04-17 1992-07-28 Oki Electric Industry Co., Ltd. MOS semiconductive device
US5185075A (en) * 1990-10-25 1993-02-09 The Alta Group Surface treated titanium/titanium alloy articles and process for producing
US5437777A (en) * 1991-12-26 1995-08-01 Nec Corporation Apparatus for forming a metal wiring pattern of semiconductor devices
US6217725B1 (en) * 1994-01-10 2001-04-17 Electroplating Technologies Ltd. Method and apparatus for anodizing
US5685968A (en) * 1994-10-14 1997-11-11 Ngk Spark Plug Co., Ltd. Ceramic substrate with thin-film capacitor and method of producing the same
US6008577A (en) * 1996-01-18 1999-12-28 Micron Technology, Inc. Flat panel display with magnetic focusing layer
US5893731A (en) * 1997-05-23 1999-04-13 Industrial Technology Research Institute Method for fabricating low cost integrated resistor capacitor combinations
US6228231B1 (en) * 1997-05-29 2001-05-08 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6017437A (en) * 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
US6193859B1 (en) * 1997-11-13 2001-02-27 Novellus Systems, Inc. Electric potential shaping apparatus for holding a semiconductor wafer during electroplating
US6121094A (en) * 1998-07-21 2000-09-19 Advanced Micro Devices, Inc. Method of making a semiconductor device with a multi-level gate structure
US6251236B1 (en) * 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition

Also Published As

Publication number Publication date
WO2001041191A2 (en) 2001-06-07

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