WO2001017029A1 - Transistor for an electronically driven display - Google Patents
Transistor for an electronically driven display Download PDFInfo
- Publication number
- WO2001017029A1 WO2001017029A1 PCT/US2000/023834 US0023834W WO0117029A1 WO 2001017029 A1 WO2001017029 A1 WO 2001017029A1 US 0023834 W US0023834 W US 0023834W WO 0117029 A1 WO0117029 A1 WO 0117029A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- transistor
- data line
- channel
- pixel
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000007639 printing Methods 0.000 claims abstract description 21
- 230000005669 field effect Effects 0.000 claims abstract description 15
- 239000003990 capacitor Substances 0.000 claims abstract description 10
- 238000007641 inkjet printing Methods 0.000 claims abstract description 8
- 238000007650 screen-printing Methods 0.000 claims abstract description 8
- 238000007646 gravure printing Methods 0.000 claims abstract description 7
- 238000007645 offset printing Methods 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims description 82
- 239000004065 semiconductor Substances 0.000 claims description 48
- -1 poly(3-hexyl thiophene) Polymers 0.000 claims description 30
- 239000012212 insulator Substances 0.000 claims description 18
- 229920000642 polymer Polymers 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 6
- 229920000123 polythiophene Polymers 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 6
- 239000002775 capsule Substances 0.000 description 44
- 239000012530 fluid Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 14
- 239000011230 binding agent Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 239000000975 dye Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 239000000049 pigment Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000976 ink Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 150000008282 halocarbons Chemical class 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007754 air knife coating Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000009685 knife-over-roll coating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000382 optic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007763 reverse roll coating Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- 238000007651 thermal printing Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
Definitions
- n- channel and p-channel FETs can be fabricated as either enhancement mode or depletion mode
- gate dielectric is adjacent the semiconductor layer, and the gate electrode is adjacent the gate dielectric.
- the semiconductor layer is adjacent the substrate, the pixel and data line electrodes are adjacent the semiconductor layer, the gate dielectric is adjacent the semiconductor layer, and the gate electrode is adjacent the gate dielectric.
- the pixel electrode is a selected one of a source electrode and a drain
- the semiconductor layer can comprise regioregular poly(3-hexyl thiophene),
- the electronic display further comprises a plurality of data lines and select lines, wherein extensions of the data lines form a plurality of data line electrodes and extensions of the select lines form a plurality of gate electrodes.
- the gate electrode In still another example, the gate electrode
- the semiconductor layer comprises an organic semiconductor layer.
- the semiconductor layer can comprises regioregular poly(3-hexyl thiophene).
- capacitor comprising a portion of the pixel electrode and a portion of a select line or another
- the storage capacitor further comprises
- the electronic display further comprises a display media
- said first electrode and said second electrode defining in a semiconductor a channel having a
- the channel length L of at least 10 microns. In one embodiment, the channel length L is at least about25 microns. In another embodiment, the channel is non-rectangular in shape.
- FIG. 2 A shows in side view
- FIG. 2B shows in top view, an example of a field effect transistor, wherein the dimensions of a source electrode and a drain electrode define the channel length, L, and channel width, W.
- FIG. 3 shows in plan view an exemplary embodiment of a thin film field effect transistor
- An encapsulated electrophoretic display typically does not suffer from the clustering and
- resulting display can be flexible. Further, because the display media can be printed (using a
- the display itself can be made inexpensively.
- the display can be formed from and can include particles that move in response to
- Some encapsulated electrophoretic displays may include two or more different types of particles. Such displays may include, for example, displays containing a plurality of anisotropic particles and a plurality of second particles in a suspending fluid.
- Application of a first electric field may cause the anisotropic particles to assume a specific orientation and present an optical property.
- Application of a second electric field may then cause the plurality of second particles to translate, thereby disorienting the anisotropic particles and
- the orientation of the anisotropic particles may be any orientation of the anisotropic particles.
- the particles may have a refractive
- An encapsulated electrophoretic display can be constructed so that the optical state of the
- the display is stable for some length of time.
- the display has two states that are stable in this manner, the display is bistable. If more than two states of the display are stable, then the display is multistable.
- bistable indicates a display in
- bistable state depends upon the display's application.
- bistable also indicates a display with an optical state sufficiently long-lived so as to be effectively bistable for a particular application.
- An encapsulated electrophoretic display may take many forms.
- the display may include capsules dispersed in a binder.
- the capsules may be of any size or shape.
- the capsules may, for example, be spherical and may have diameters in the millimeter range or the micron range, but are preferably from about ten to about a few hundred microns.
- the capsules may be formed by an encapsulation technique.
- Particles may be encapsulated in the capsules. The particles may be
- the particles may be colored, luminescent, light-
- the particles may include neat pigments, dyed (laked) pigments or pigment/polymer composites, for example.
- the display may further include a
- the capsules contain one or more species of electrophoretically mobile particles dispersed in a dyed suspending fluid.
- Another example is a system in which the capsules contain two separate species of particles suspended in a clear suspending fluid, in which
- one species of particle absorbs light (black), while the other species of particle scatters light
- the particles are commonly solid pigments, dyed particles, or pigment/polymer
- the particles may be oriented or translated by placing an electric field across the capsule.
- the electric field may include an alternating-current field or a direct-current field.
- the electric field may be provided by at least one pair of electrodes disposed
- electrophoretic particles for binding the capsules to a substrate
- fluid for example, to surround the electrophoretic particles and provide a medium for migration
- the capsule membranes may engage in useful surface interactions with the electrophoretic particles, or may act as an inert physical boundary between the fluid and the
- Polymer binders may set as adhesives between capsule membranes and electrode
- Such functional constituents include, but are not limited to, particles, dyes, suspending fluids,
- types of particles that may be
- Such particles may also be transparent.
- Exemplary particles include
- Luminescent particles may include, for example, zinc sulfide particles.
- the zinc sulfide particles may also be
- absorbing particles may include, for example, dyes or pigments.
- dyes or pigments Types of dyes for use in electrophoretic displays are commonly known in the art. Useful dyes are typically soluble in the
- suspending fluid may further be part of a polymeric chain.
- Dyes may be polymerized by
- a suspending (i.e., electrophoretic) fluid may be a high resistivity fluid.
- the suspending fluid may be a single fluid, or it may be a mixture of two or more fluids.
- the suspending fluid whether a single fluid or a mixture of fluids, may have its density substantially matched to that of
- the suspending fluid may be halogenated hydrocarbon, such as tetrachloroethylene, for example.
- the halogenated hydrocarbon may also be a low molecular weight polymer.
- One such low molecular weight polymer is poly(chlorotrifluoroethylene).
- degree of polymerization for this polymer may be from about 2 to about 10.
- capsules may be formed in, or later dispersed in, a binder.
- binders include water-soluble polymers, water-dispersed polymers, oil-soluble polymers, thermoset polymers, thermoplastic polymers, and UV- or radiation-cured polymers. While the examples described here are listed using encapsulated electrophoretic displays, there are other particle-based display media that also should work well, including encapsulated
- magnetic particles also can be useful.
- a separate encapsulation step of the process is not necessary.
- electrophoretic fluid may be directly dispersed or emulsified into the binder (or a precursor to the binder material) to form what may be called a "polymer-dispersed electrophoretic display.”
- the binder material surrounds the capsules and separates the two bounding electrodes. This binder material must be compatible with the capsule and bounding electrodes and must possess properties that allow for facile printing or coating. It
- the electrophoretic fluid may also possess barrier properties for water, oxygen, ultraviolet light, the electrophoretic fluid,
- the polymer-dispersed electrophoretic display may be of the emulsion
- FIG. 1A depicts a single capsule 20 of an encapsulated display media.
- the embodiment depicted in FIG. 1 A includes a capsule 20 containing at least one particle 50
- the capsule 20 is addressed by a first electrode 30 and a
- the first electrode 30 is smaller than the second electrode 40.
- the first electrode 30 and the second electrode 40 may be set to voltage potentials which affect the
- the particles 50 represent 0.1% to 20% of the volume enclosed by the capsule 20.
- the particles 50 represent 5% to 15% of the volume enclosed by the capsule 20. In more preferred embodiments the particles 50 represent 9% to 11% of the volume defined by the capsule 20. In general, the volume percentage of the capsule 20 that the
- particles 50 represent should be selected so that the particles 50 expose most of the second, larger
- the particles 50 may be colored any one of a number of colors.
- the particles 50 may be either positively charged or negatively charged.
- the particles 50 are dispersed in a dispersing fluid 25.
- the dispersing fluid 25 should be any suitable dispersing fluid 25.
- the fluid 25 may be clear, or substantially clear, so that the fluid 25 does not inhibit viewing the particles 50 and the electrodes 30, 40 from position 10.
- the fluid 25 is dyed.
- the dispersing fluid 25 has a specific gravity matched to the density of the particles 50.
- the electrodes 30, 40 should be sized and positioned appropriately so that together they address the entire capsule 20. There may be exactly one pair of electrodes 30, 40 per capsule 20,
- the capsule 20 has a
- the electrodes 30, 40 should address most, or
- the smaller electrode 30 is at most one-half the size of the larger electrode 40. In preferred embodiments the smaller electrode
- the smaller electrode 30 is one-eighth the size of the larger electrode 40. In even more preferred
- the smaller electrode 30 is one-sixteenth the size of the larger electrode 40. It should be noted that reference to “smaller” in connection with the electrode 30 means that the
- electrode 30 addresses a smaller amount of the surface area of the capsule 20, not necessarily that
- the electrode 30 is physically smaller than the larger electrode 40.
- multiple electrodes are physically smaller than the larger electrode 40. For example, multiple electrodes
- capsules 20 may be positioned such that less of each capsule 20 is addressed by the "smaller" electrode 30, even though both electrodes 30, 40 are equal in size. It should also be noted that, as shown in FIG. 1C, electrode 30 may address only a small corner of a rectangular capsule 20
- Electrodes may be fabricated from any material capable of conducting electricity so that electrode 30, 40 may apply an electric field to the capsule 20. As noted above, the rear-addressed embodiments depicted in FIGs. 1 A and IB allow the electrodes 30, 40 to be fabricated from
- opaque materials such as solder paste, copper, copper-clad polyimide, graphite inks, silver inks
- Electrodes 30, 40 may be provided with contrasting optical properties. In some embodiments, one of the electrodes has an optical property complementary to optical properties
- the capsule 20 contains positively charged black particles 50, and a substantially clear suspending fluid 25.
- the first, smaller electrode 30 is colored black, and is smaller than the second electrode 40, which is colored white or is highly reflective. When the smaller, black electrode 30 is placed at a negative voltage potential relative to larger, white
- the positively-charged particles 50 migrate to the smaller, black electrode 30.
- the effect to a viewer of the capsule 20 located at position 10 is a mixture of the larger, white electrode 40 and the smaller, black electrode 30, creating an effect which is largely white.
- FIG. IB when the smaller, black electrode 30 is placed at a positive voltage
- the capsule 20 may be addressed to display either a white visual state or a black
- the color of the larger electrode 40 allows fabrication of a rear-addressed, two-color display
- the particles 50 allow a rear-addressed two-color system to be fabricated having white as one of the colors. Further, it is contemplated that the particles 50 and the smaller electrode 30 can be different colors. In these embodiments, a two-color display may be fabricated having a second color that is different from the color of the smaller electrode 30 and the particles 50.
- a rear-addressed, orange-white display may be fabricated by providing blue particles
- the optical properties of the electrodes 30, 40 and the particles 50 can be independently selected to provide desired display characteristics. In some embodiments the optical properties of the
- dispersing fluid 25 may also be varied, e.g. the fluid 25 may be dyed.
- a field effect transistor 100 having a channel length, L, and a
- FIG. 2B shows the FET from the top.
- the FET has gate electrode 110, source electrode 120, and drain electrode 130.
- the FET can have a substrate 160, upon which the gate 110 is disposed.
- insulator 140 is disposed adjacent the gate 110 and the substrate 160.
- a semiconductor 150 is
- the source electrode 120 and the drain electrode 130 are disposed adjacent the semiconductor 150,
- source 120 and drain 130 can be disposed adjacent the substrate 160, the semiconductor 150
- the layer can be disposed adjacent the substrate 160 and the source 120 and drain 130 electrodes, the insulator 140 can be disposed adjacent the semiconductor 150, and the gate electrode 110 can be disposed adjacent the insulator 140.
- either the source 120 or the drain 130 can be used to supply a controlled signal to a device such as a display element, or a pixel. Therefore, one of the
- source 120 and drain 130 electrodes can be an electrode used to address a pixel, and can be referred to as a pixel electrode. As will become apparent from the discussion hereafter, the other
- Electrode can be connected to a data line, and can be referred to as a data line electrode.
- the backplane should choose W/L so that the display functions properly.
- the invention relates to making printed transistors using much longer channel lengths, of at least 10 microns, preferably 25 microns, to as high as several hundred microns, while
- FIG. 3 shows the traditional design of a pixel 200 in an active matrix display where the TFT resides adjacent to the pixel electrode.
- the pixel area is defined by an electrode that can be called a pixel or display electrode 320.
- the upper left portion of display electrode 320 is the source 120 electrode of a TFT.
- the drain 130 electrode of the TFT is
- select line 320 electrode is accomplished by applying a control ("selection") voltage to the select line 310, which voltage is communicated to the gate 110 electrode.
- selection a control voltage
- the TFT switch closes the TFT switch, communicating the data line 330 signal to the display electrode 320 via the drain 130 and the source 120, or causes the TFT to be open, communicating no signal to the pixel or display electrode 320.
- FIG. 4 shows an example of an embodiment 400 of the invention.
- FIG. 4 A shows an example of an embodiment 400 of the invention.
- FIG. 4B shows an elevation along the section A-A.
- the transistor is placed substantially below the pixel electrode 320 in order to maintain a large aperture ratio (the fraction of the display active area covered by pixel electrodes).
- the aperture ratio the fraction of the display active area covered by pixel electrodes.
- source 120 and drain 130 electrodes are separated from the pixel electrode 320 by an insulating layer 170 except where the source 120 is electrically connected to the pixel electrode 320.
- This electrical connection may be accomplished in at least two ways. First, a via may be cut, drilled, or otherwise formed through the insulating layer 170 that separates the source 120 and drain 130 from the pixel electrode 320. When the pixel electrode 320 material is applied,
- this material fills the via, thereby establishing electrical connection between the source 120 and pixel electrode 320.
- source 120 and drain 130 electrodes from the pixel electrode 320 is patterned such that a portion of the source 120 electrode is left exposed.
- the pixel electrode 320 material is then applied, it fills the exposed area, thereby establishing electrical connection between the source
- the insulating layer 170 may be either a thin or thick film, but is
- the semiconductor channel is shielded by the insulating layer 170 and the pixel electrode 320
- the TFT can have a channel
- the TFT channel could be defined in ways other
- TFT channel geometry includes co-spiraling drain
- any geometry where the channel is substantially under the pixel electrode 320 is contemplated, and especially those where the channel takes a geometry other than a simple
- a relatively small carrier mobility for example, an organic semiconductor such as regioregular
- poly(3-hexyl thiophene) poly(3-hexyl thiophene).
- Other materials that can be employed are polythiophene, poly(3- alkylthiophene), alkyl-substituted oligothiophene, polythienylenevinylene, poly(para- phenylenevinylene) and doped versions of these polymers.
- An example of a suitable oligomeric semiconductor is alpha-hexathienylene. Horowitz, Organic Field-Effect Transistors, Adv.
- a field effect transistor made with regioregular poly(3- hexylthiophene) as the semiconductor layer is described in Bao et al., Soluble and Processable Regioregular Poly ⁇ -hexylthiophene) for Thin Film Field-Effect Transistor Applications with High Mobility, Appl. Phys. Lett. 69 (26), p. 4108 (December 1996).
- a field effect transistor made with regioregular poly(3- hexylthiophene) as the semiconductor layer is described in Bao et al., Soluble and Processable Regioregular Poly ⁇ -hexylthiophene) for Thin Film Field-Effect Transistor Applications with High Mobility, Appl. Phys. Lett. 69 (26), p. 4108 (December 1996).
- a field effect transistor made with regioregular poly(3- hexylthiophene) as the semiconductor layer is described in Bao et al.
- Such a transistor could be used in construction of a backplane in one of various electronic
- FIG. 4 The exemplary embodiment of FIG. 4 is fabricated in a sequence of depositions of material similar to that described with respect to FIG. 2. As was discussed in
- FIG. 5 shows an exemplary pixel design 500 incorporating a storage capacitor 550.
- FIG. 5 A shows in plan view the exemplary pixel or display electrode 320 having an overlap with a portion of the select line 310 used to drive another pixel.
- FIG. 5B shows the exemplary pixel in elevation or side view taken along section B-B of FIG. 4A.
- the storage capacitor 550 is formed
- the insulator layer 170 is made thinner over the region that forms the storage
- the insulator layer 170 is absent from the storage
- capacitor 550 The exemplary embodiment of FIG. 5 is fabricated in a sequence of depositions of material similar to that described with respect to FIG. 2. As was discussed in connection with
- FIG. 2 alternative methods of construction can be envisioned.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00959627A EP1208603A1 (en) | 1999-08-31 | 2000-08-30 | Transistor for an electronically driven display |
AU70914/00A AU7091400A (en) | 1999-08-31 | 2000-08-30 | Transistor for an electronically driven display |
JP2001520475A JP2003508807A (en) | 1999-08-31 | 2000-08-30 | Electronically driven display transistors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15154999P | 1999-08-31 | 1999-08-31 | |
US60/151,549 | 1999-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001017029A1 true WO2001017029A1 (en) | 2001-03-08 |
Family
ID=22539265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/023834 WO2001017029A1 (en) | 1999-08-31 | 2000-08-30 | Transistor for an electronically driven display |
Country Status (5)
Country | Link |
---|---|
US (2) | US6545291B1 (en) |
EP (1) | EP1208603A1 (en) |
JP (1) | JP2003508807A (en) |
AU (1) | AU7091400A (en) |
WO (1) | WO2001017029A1 (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002061837A2 (en) * | 2001-01-31 | 2002-08-08 | Seiko Epson Corporation | Modular display device and organic thin-film transistor |
US6580545B2 (en) | 2001-04-19 | 2003-06-17 | E Ink Corporation | Electrochromic-nanoparticle displays |
WO2003098696A1 (en) * | 2002-05-17 | 2003-11-27 | Seiko Epson Corporation | Circuit fabrication method |
WO2004066349A2 (en) * | 2003-01-21 | 2004-08-05 | Polyic Gmbh & Co. Kg | Functional layer of an organic field effect transistor with compensation for printing-related defects |
WO2004068608A2 (en) * | 2003-01-14 | 2004-08-12 | Polyic Gmbh & Co. Kg | Organic field effect transistor and integrated circuit |
US6885032B2 (en) | 2001-11-21 | 2005-04-26 | Visible Tech-Knowledgy, Inc. | Display assembly having flexible transistors on a flexible substrate |
EP1715374A1 (en) * | 2005-04-21 | 2006-10-25 | Samsung SDI Germany GmbH | Active matrix circuit, active matrix display and method for manufacturing the same |
US7170670B2 (en) | 2001-04-02 | 2007-01-30 | E Ink Corporation | Electrophoretic medium and display with improved image stability |
US7851803B2 (en) | 2008-04-04 | 2010-12-14 | Fujifilm Corporation | Semiconductor device, manufacturing method of semiconductor device, and display device |
US7968887B2 (en) | 2005-04-21 | 2011-06-28 | Samsung Mobile Display Co., Ltd. | Active matrix circuit substrate, method of manufacturing the same, and active matrix display including the active matrix circuit substrate |
US8154015B2 (en) | 2001-11-09 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device including thin film transistor |
US8217432B2 (en) | 2006-10-06 | 2012-07-10 | Polyic Gmbh & Co. Kg | Field effect transistor and electric circuit |
JP2013080233A (en) * | 2002-01-18 | 2013-05-02 | Semiconductor Energy Lab Co Ltd | Light-emitting device |
EP2916312A1 (en) | 2001-11-20 | 2015-09-09 | E Ink Corporation | Methods for driving bistable electro-optic displays |
JP2015179853A (en) * | 2001-11-09 | 2015-10-08 | 株式会社半導体エネルギー研究所 | light-emitting device |
WO2021168131A1 (en) * | 2020-02-18 | 2021-08-26 | Nuclear Nucleics Ltd. | Adaptive gate driving for high frequency ac driving of ewod arrays |
WO2021168162A1 (en) * | 2020-02-19 | 2021-08-26 | Nuclera Nucleics Ltd. | Latched transistor driving for high frequency ac driving of ewod arrays |
Families Citing this family (245)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7411719B2 (en) | 1995-07-20 | 2008-08-12 | E Ink Corporation | Electrophoretic medium and process for the production thereof |
US7079305B2 (en) * | 2001-03-19 | 2006-07-18 | E Ink Corporation | Electrophoretic medium and process for the production thereof |
US8139050B2 (en) | 1995-07-20 | 2012-03-20 | E Ink Corporation | Addressing schemes for electronic displays |
US7583251B2 (en) * | 1995-07-20 | 2009-09-01 | E Ink Corporation | Dielectrophoretic displays |
US7259744B2 (en) | 1995-07-20 | 2007-08-21 | E Ink Corporation | Dielectrophoretic displays |
US7999787B2 (en) | 1995-07-20 | 2011-08-16 | E Ink Corporation | Methods for driving electrophoretic displays using dielectrophoretic forces |
US7193625B2 (en) * | 1999-04-30 | 2007-03-20 | E Ink Corporation | Methods for driving electro-optic displays, and apparatus for use therein |
US7848006B2 (en) * | 1995-07-20 | 2010-12-07 | E Ink Corporation | Electrophoretic displays with controlled amounts of pigment |
US7327511B2 (en) * | 2004-03-23 | 2008-02-05 | E Ink Corporation | Light modulators |
US6866760B2 (en) * | 1998-08-27 | 2005-03-15 | E Ink Corporation | Electrophoretic medium and process for the production thereof |
US8040594B2 (en) | 1997-08-28 | 2011-10-18 | E Ink Corporation | Multi-color electrophoretic displays |
US20020113770A1 (en) | 1998-07-08 | 2002-08-22 | Joseph M. Jacobson | Methods for achieving improved color in microencapsulated electrophoretic devices |
US7119772B2 (en) * | 1999-04-30 | 2006-10-10 | E Ink Corporation | Methods for driving bistable electro-optic displays, and apparatus for use therein |
US7012600B2 (en) | 1999-04-30 | 2006-03-14 | E Ink Corporation | Methods for driving bistable electro-optic displays, and apparatus for use therein |
US7119759B2 (en) * | 1999-05-03 | 2006-10-10 | E Ink Corporation | Machine-readable displays |
US8009348B2 (en) * | 1999-05-03 | 2011-08-30 | E Ink Corporation | Machine-readable displays |
US8115729B2 (en) | 1999-05-03 | 2012-02-14 | E Ink Corporation | Electrophoretic display element with filler particles |
US6879314B1 (en) | 1999-09-28 | 2005-04-12 | Brother International Corporation | Methods and apparatus for subjecting an element to an electrical field |
US7893435B2 (en) | 2000-04-18 | 2011-02-22 | E Ink Corporation | Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough |
CN1237623C (en) * | 2000-04-18 | 2006-01-18 | 伊英克公司 | Process for fabricating thin transistor |
US6816147B2 (en) * | 2000-08-17 | 2004-11-09 | E Ink Corporation | Bistable electro-optic display, and method for addressing same |
JP2002215065A (en) * | 2000-11-02 | 2002-07-31 | Seiko Epson Corp | Organo-electroluminescence device and its manufacturing method and electronic equipment |
KR100776514B1 (en) * | 2000-12-30 | 2007-11-16 | 엘지.필립스 엘시디 주식회사 | Liquid Crystal Display and Fabricating Method Thereof |
JP4198999B2 (en) * | 2001-03-13 | 2008-12-17 | イー インク コーポレイション | Equipment for displaying drawings |
US7679814B2 (en) | 2001-04-02 | 2010-03-16 | E Ink Corporation | Materials for use in electrophoretic displays |
US20050156340A1 (en) | 2004-01-20 | 2005-07-21 | E Ink Corporation | Preparation of capsules |
US8390918B2 (en) * | 2001-04-02 | 2013-03-05 | E Ink Corporation | Electrophoretic displays with controlled amounts of pigment |
WO2002093246A1 (en) * | 2001-05-15 | 2002-11-21 | E Ink Corporation | Electrophoretic particles |
DE10126860C2 (en) * | 2001-06-01 | 2003-05-28 | Siemens Ag | Organic field effect transistor, process for its manufacture and use for the construction of integrated circuits |
US6982178B2 (en) | 2002-06-10 | 2006-01-03 | E Ink Corporation | Components and methods for use in electro-optic displays |
US7110163B2 (en) * | 2001-07-09 | 2006-09-19 | E Ink Corporation | Electro-optic display and lamination adhesive for use therein |
US7535624B2 (en) * | 2001-07-09 | 2009-05-19 | E Ink Corporation | Electro-optic display and materials for use therein |
US6967640B2 (en) * | 2001-07-27 | 2005-11-22 | E Ink Corporation | Microencapsulated electrophoretic display with integrated driver |
JP4155553B2 (en) * | 2001-08-01 | 2008-09-24 | キヤノン株式会社 | Display element and manufacturing method thereof |
US6819471B2 (en) * | 2001-08-16 | 2004-11-16 | E Ink Corporation | Light modulation by frustration of total internal reflection |
US6825970B2 (en) * | 2001-09-14 | 2004-11-30 | E Ink Corporation | Methods for addressing electro-optic materials |
US6870312B2 (en) * | 2001-11-01 | 2005-03-22 | Massachusetts Institute Of Technology | Organic field emission device |
US8593396B2 (en) | 2001-11-20 | 2013-11-26 | E Ink Corporation | Methods and apparatus for driving electro-optic displays |
US7952557B2 (en) * | 2001-11-20 | 2011-05-31 | E Ink Corporation | Methods and apparatus for driving electro-optic displays |
US8125501B2 (en) | 2001-11-20 | 2012-02-28 | E Ink Corporation | Voltage modulated driver circuits for electro-optic displays |
US9412314B2 (en) | 2001-11-20 | 2016-08-09 | E Ink Corporation | Methods for driving electro-optic displays |
US8558783B2 (en) | 2001-11-20 | 2013-10-15 | E Ink Corporation | Electro-optic displays with reduced remnant voltage |
US7528822B2 (en) * | 2001-11-20 | 2009-05-05 | E Ink Corporation | Methods for driving electro-optic displays |
US9530363B2 (en) | 2001-11-20 | 2016-12-27 | E Ink Corporation | Methods and apparatus for driving electro-optic displays |
US6963080B2 (en) * | 2001-11-26 | 2005-11-08 | International Business Machines Corporation | Thin film transistors using solution processed pentacene precursor as organic semiconductor |
US6950220B2 (en) * | 2002-03-18 | 2005-09-27 | E Ink Corporation | Electro-optic displays, and methods for driving same |
US7190008B2 (en) | 2002-04-24 | 2007-03-13 | E Ink Corporation | Electro-optic displays, and components for use therein |
US7223672B2 (en) * | 2002-04-24 | 2007-05-29 | E Ink Corporation | Processes for forming backplanes for electro-optic displays |
JP2005524110A (en) * | 2002-04-24 | 2005-08-11 | イー−インク コーポレイション | Electronic display device |
US6958848B2 (en) | 2002-05-23 | 2005-10-25 | E Ink Corporation | Capsules, materials for use therein and electrophoretic media and displays containing such capsules |
US7583427B2 (en) * | 2002-06-10 | 2009-09-01 | E Ink Corporation | Components and methods for use in electro-optic displays |
US8363299B2 (en) * | 2002-06-10 | 2013-01-29 | E Ink Corporation | Electro-optic displays, and processes for the production thereof |
US9470950B2 (en) | 2002-06-10 | 2016-10-18 | E Ink Corporation | Electro-optic displays, and processes for the production thereof |
US7843621B2 (en) * | 2002-06-10 | 2010-11-30 | E Ink Corporation | Components and testing methods for use in the production of electro-optic displays |
US7649674B2 (en) | 2002-06-10 | 2010-01-19 | E Ink Corporation | Electro-optic display with edge seal |
US7554712B2 (en) | 2005-06-23 | 2009-06-30 | E Ink Corporation | Edge seals for, and processes for assembly of, electro-optic displays |
US7110164B2 (en) * | 2002-06-10 | 2006-09-19 | E Ink Corporation | Electro-optic displays, and processes for the production thereof |
US8049947B2 (en) * | 2002-06-10 | 2011-11-01 | E Ink Corporation | Components and methods for use in electro-optic displays |
CN101373581B (en) | 2002-06-13 | 2014-07-16 | 伊英克公司 | Methods for driving electro-optic displays |
US20080024482A1 (en) | 2002-06-13 | 2008-01-31 | E Ink Corporation | Methods for driving electro-optic displays |
AU2003261394A1 (en) * | 2002-08-05 | 2004-02-23 | Research Foundation Of The State University Of New York | System and method for manufacturing embedded conformal electronics |
US20040105036A1 (en) * | 2002-08-06 | 2004-06-03 | E Ink Corporation | Protection of electro-optic displays against thermal effects |
TWI256732B (en) * | 2002-08-30 | 2006-06-11 | Sharp Kk | Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus |
WO2004023202A1 (en) | 2002-09-03 | 2004-03-18 | E Ink Corporation | Electrophoretic medium with gaseous suspending fluid |
US7839564B2 (en) | 2002-09-03 | 2010-11-23 | E Ink Corporation | Components and methods for use in electro-optic displays |
JP2005537519A (en) | 2002-09-03 | 2005-12-08 | イー−インク コーポレイション | Electro-optic display |
US20130063333A1 (en) | 2002-10-16 | 2013-03-14 | E Ink Corporation | Electrophoretic displays |
CN101118362A (en) * | 2002-12-16 | 2008-02-06 | 伊英克公司 | Backplanes for electro-optic displays |
US6922276B2 (en) * | 2002-12-23 | 2005-07-26 | E Ink Corporation | Flexible electro-optic displays |
US6987603B2 (en) * | 2003-01-31 | 2006-01-17 | E Ink Corporation | Construction of electrophoretic displays |
JP2004273678A (en) * | 2003-03-07 | 2004-09-30 | Konica Minolta Holdings Inc | Organic thin film transistor |
JP2004361424A (en) * | 2003-03-19 | 2004-12-24 | Semiconductor Energy Lab Co Ltd | Element substrate, light emitting device and driving method of light emitting device |
US7339715B2 (en) * | 2003-03-25 | 2008-03-04 | E Ink Corporation | Processes for the production of electrophoretic displays |
US7910175B2 (en) * | 2003-03-25 | 2011-03-22 | E Ink Corporation | Processes for the production of electrophoretic displays |
ATE485535T1 (en) * | 2003-03-27 | 2010-11-15 | E Ink Corp | ELECTRO-OPTICAL ASSEMBLY |
US10726798B2 (en) | 2003-03-31 | 2020-07-28 | E Ink Corporation | Methods for operating electro-optic displays |
KR100951351B1 (en) * | 2003-04-22 | 2010-04-08 | 삼성전자주식회사 | Thin film transistor array panel and electro phoretic indication display including the panel |
EP1623405B1 (en) * | 2003-05-02 | 2015-07-29 | E Ink Corporation | Electrophoretic displays |
US7221095B2 (en) * | 2003-06-16 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for fabricating light emitting device |
US8174490B2 (en) * | 2003-06-30 | 2012-05-08 | E Ink Corporation | Methods for driving electrophoretic displays |
EP1639574B1 (en) | 2003-06-30 | 2015-04-22 | E Ink Corporation | Methods for driving electro-optic displays |
WO2005010598A2 (en) | 2003-07-24 | 2005-02-03 | E Ink Corporation | Electro-optic displays |
WO2005020199A2 (en) * | 2003-08-19 | 2005-03-03 | E Ink Corporation | Methods for controlling electro-optic displays |
EP1665214A4 (en) * | 2003-09-19 | 2008-03-19 | E Ink Corp | Methods for reducing edge effects in electro-optic displays |
ATE405916T1 (en) * | 2003-10-08 | 2008-09-15 | E Ink Corp | ELECTRICAL WETTING DISPLAYS |
US8319759B2 (en) | 2003-10-08 | 2012-11-27 | E Ink Corporation | Electrowetting displays |
US7672040B2 (en) * | 2003-11-05 | 2010-03-02 | E Ink Corporation | Electro-optic displays, and materials for use therein |
EP1680774B9 (en) | 2003-11-05 | 2018-05-16 | E Ink Corporation | Electrophoretic medium for electro-optic displays |
US8177942B2 (en) * | 2003-11-05 | 2012-05-15 | E Ink Corporation | Electro-optic displays, and materials for use therein |
US7551346B2 (en) * | 2003-11-05 | 2009-06-23 | E Ink Corporation | Electro-optic displays, and materials for use therein |
US20110164301A1 (en) | 2003-11-05 | 2011-07-07 | E Ink Corporation | Electro-optic displays, and materials for use therein |
US8928562B2 (en) * | 2003-11-25 | 2015-01-06 | E Ink Corporation | Electro-optic displays, and methods for driving same |
JP4790622B2 (en) | 2003-11-26 | 2011-10-12 | イー インク コーポレイション | Low residual voltage electro-optic display |
US7358530B2 (en) * | 2003-12-12 | 2008-04-15 | Palo Alto Research Center Incorporated | Thin-film transistor array with ring geometry |
US6921679B2 (en) * | 2003-12-19 | 2005-07-26 | Palo Alto Research Center Incorporated | Electronic device and methods for fabricating an electronic device |
KR100711001B1 (en) | 2003-12-29 | 2007-04-24 | 엘지.필립스 엘시디 주식회사 | Organic Electro luminescence Device |
US7206119B2 (en) * | 2003-12-31 | 2007-04-17 | E Ink Corporation | Electro-optic displays, and method for driving same |
US7075703B2 (en) * | 2004-01-16 | 2006-07-11 | E Ink Corporation | Process for sealing electro-optic displays |
JP4120591B2 (en) | 2004-01-16 | 2008-07-16 | セイコーエプソン株式会社 | Electro-optical device substrate, electro-optical device, and electrophoretic display device |
US7388572B2 (en) * | 2004-02-27 | 2008-06-17 | E Ink Corporation | Backplanes for electro-optic displays |
US7492339B2 (en) * | 2004-03-26 | 2009-02-17 | E Ink Corporation | Methods for driving bistable electro-optic displays |
US8289250B2 (en) * | 2004-03-31 | 2012-10-16 | E Ink Corporation | Methods for driving electro-optic displays |
EP1743211A4 (en) * | 2004-04-13 | 2007-11-07 | Univ Arizona | Patterned electrodes for electroactive liquid-crystal ophthalmic devices |
US20050253777A1 (en) * | 2004-05-12 | 2005-11-17 | E Ink Corporation | Tiled displays and methods for driving same |
US20080136774A1 (en) | 2004-07-27 | 2008-06-12 | E Ink Corporation | Methods for driving electrophoretic displays using dielectrophoretic forces |
WO2006015044A1 (en) * | 2004-07-27 | 2006-02-09 | E Ink Corporation | Electro-optic displays |
US11250794B2 (en) | 2004-07-27 | 2022-02-15 | E Ink Corporation | Methods for driving electrophoretic displays using dielectrophoretic forces |
US7321133B2 (en) * | 2004-11-17 | 2008-01-22 | Plextronics, Inc. | Heteroatomic regioregular poly(3-substitutedthiophenes) as thin film conductors in diodes which are not light emitting or photovoltaic |
JP2008521065A (en) * | 2005-01-26 | 2008-06-19 | イー インク コーポレイション | Electrophoretic display using gaseous fluid |
KR101133767B1 (en) * | 2005-03-09 | 2012-04-09 | 삼성전자주식회사 | Organic thin film transistor array panel and method for manufacturing the same |
KR101219045B1 (en) * | 2005-06-29 | 2013-01-07 | 삼성디스플레이 주식회사 | Display device and manufacturing method of the same |
KR100646939B1 (en) * | 2005-08-29 | 2006-11-23 | 삼성에스디아이 주식회사 | Thin film transistor and method thereof |
KR101269304B1 (en) | 2005-10-18 | 2013-05-29 | 이 잉크 코포레이션 | Components for electro-optic displays |
US20080043318A1 (en) | 2005-10-18 | 2008-02-21 | E Ink Corporation | Color electro-optic displays, and processes for the production thereof |
US20070093698A1 (en) * | 2005-10-20 | 2007-04-26 | Glucon Inc. | Apparatus and methods for attaching a device to a body |
US20070093717A1 (en) * | 2005-10-20 | 2007-04-26 | Glucon Inc. | Wearable glucometer configurations |
US20070091417A1 (en) * | 2005-10-25 | 2007-04-26 | E Ink Corporation | Electrophoretic media and displays with improved binder |
US8212238B2 (en) * | 2005-12-27 | 2012-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8390301B2 (en) * | 2006-03-08 | 2013-03-05 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
US7843624B2 (en) * | 2006-03-08 | 2010-11-30 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
TWI350793B (en) | 2006-03-08 | 2011-10-21 | E Ink Corp | Methods for production of electro-optic displays |
US8610988B2 (en) | 2006-03-09 | 2013-12-17 | E Ink Corporation | Electro-optic display with edge seal |
US7952790B2 (en) * | 2006-03-22 | 2011-05-31 | E Ink Corporation | Electro-optic media produced using ink jet printing |
US7903319B2 (en) * | 2006-07-11 | 2011-03-08 | E Ink Corporation | Electrophoretic medium and display with improved image stability |
US8018640B2 (en) * | 2006-07-13 | 2011-09-13 | E Ink Corporation | Particles for use in electrophoretic displays |
JP2008021814A (en) * | 2006-07-13 | 2008-01-31 | Hitachi Ltd | Field-effect transistor, organic thin film transistor, and method of manufacturing organic transistor |
US20080024429A1 (en) * | 2006-07-25 | 2008-01-31 | E Ink Corporation | Electrophoretic displays using gaseous fluids |
US7492497B2 (en) * | 2006-08-02 | 2009-02-17 | E Ink Corporation | Multi-layer light modulator |
US7986450B2 (en) | 2006-09-22 | 2011-07-26 | E Ink Corporation | Electro-optic display and materials for use therein |
US7477444B2 (en) * | 2006-09-22 | 2009-01-13 | E Ink Corporation & Air Products And Chemical, Inc. | Electro-optic display and materials for use therein |
US7649666B2 (en) * | 2006-12-07 | 2010-01-19 | E Ink Corporation | Components and methods for use in electro-optic displays |
KR20080061039A (en) * | 2006-12-28 | 2008-07-02 | 삼성전자주식회사 | Electro-phoretic display device and method for manufacturing the same |
US7688497B2 (en) * | 2007-01-22 | 2010-03-30 | E Ink Corporation | Multi-layer sheet for use in electro-optic displays |
TWI386313B (en) * | 2007-01-22 | 2013-02-21 | E Ink Corp | Multi-layer sheet for use in electro-optic displays |
US7826129B2 (en) | 2007-03-06 | 2010-11-02 | E Ink Corporation | Materials for use in electrophoretic displays |
US7649220B2 (en) * | 2007-03-29 | 2010-01-19 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Photodetector having dark current correction |
US10319313B2 (en) * | 2007-05-21 | 2019-06-11 | E Ink Corporation | Methods for driving video electro-optic displays |
US9199441B2 (en) | 2007-06-28 | 2015-12-01 | E Ink Corporation | Processes for the production of electro-optic displays, and color filters for use therein |
WO2009006248A1 (en) | 2007-06-29 | 2009-01-08 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
US8902153B2 (en) | 2007-08-03 | 2014-12-02 | E Ink Corporation | Electro-optic displays, and processes for their production |
US20090122389A1 (en) | 2007-11-14 | 2009-05-14 | E Ink Corporation | Electro-optic assemblies, and adhesives and binders for use therein |
WO2009117730A1 (en) * | 2008-03-21 | 2009-09-24 | E Ink Corporation | Electro-optic displays and color filters |
ES2823736T3 (en) | 2008-04-11 | 2021-05-10 | E Ink Corp | Procedures for exciting electro-optical display devices |
JP2009302136A (en) * | 2008-06-10 | 2009-12-24 | Panasonic Corp | Semiconductor integrated circuit |
US8457013B2 (en) | 2009-01-13 | 2013-06-04 | Metrologic Instruments, Inc. | Wireless dual-function network device dynamically switching and reconfiguring from a wireless network router state of operation into a wireless network coordinator state of operation in a wireless communication network |
US8234507B2 (en) | 2009-01-13 | 2012-07-31 | Metrologic Instruments, Inc. | Electronic-ink display device employing a power switching mechanism automatically responsive to predefined states of device configuration |
TWI484273B (en) * | 2009-02-09 | 2015-05-11 | E Ink Corp | Electrophoretic particles |
US8098418B2 (en) * | 2009-03-03 | 2012-01-17 | E. Ink Corporation | Electro-optic displays, and color filters for use therein |
CN102378794A (en) * | 2009-03-31 | 2012-03-14 | Dic株式会社 | Organic semiconductor ink composition and method for forming organic semiconductor pattern using same |
US20110104989A1 (en) * | 2009-04-30 | 2011-05-05 | First Principles LLC | Dressing bar for embedding abrasive particles into substrates |
US8801497B2 (en) | 2009-04-30 | 2014-08-12 | Rdc Holdings, Llc | Array of abrasive members with resilient support |
US9221148B2 (en) | 2009-04-30 | 2015-12-29 | Rdc Holdings, Llc | Method and apparatus for processing sliders for disk drives, and to various processing media for the same |
WO2011139619A1 (en) | 2010-04-26 | 2011-11-10 | Hsio Technologies, Llc | Semiconductor device package adapter |
WO2014011232A1 (en) | 2012-07-12 | 2014-01-16 | Hsio Technologies, Llc | Semiconductor socket with direct selective metalization |
WO2010138493A1 (en) | 2009-05-28 | 2010-12-02 | Hsio Technologies, Llc | High performance surface mount electrical interconnect |
US9276336B2 (en) | 2009-05-28 | 2016-03-01 | Hsio Technologies, Llc | Metalized pad to electrical contact interface |
US9320133B2 (en) | 2009-06-02 | 2016-04-19 | Hsio Technologies, Llc | Electrical interconnect IC device socket |
US8912812B2 (en) | 2009-06-02 | 2014-12-16 | Hsio Technologies, Llc | Compliant printed circuit wafer probe diagnostic tool |
US9184527B2 (en) | 2009-06-02 | 2015-11-10 | Hsio Technologies, Llc | Electrical connector insulator housing |
US8610265B2 (en) | 2009-06-02 | 2013-12-17 | Hsio Technologies, Llc | Compliant core peripheral lead semiconductor test socket |
US9231328B2 (en) | 2009-06-02 | 2016-01-05 | Hsio Technologies, Llc | Resilient conductive electrical interconnect |
WO2011002709A1 (en) | 2009-06-29 | 2011-01-06 | Hsio Technologies, Llc | Compliant printed circuit semiconductor tester interface |
US8525346B2 (en) | 2009-06-02 | 2013-09-03 | Hsio Technologies, Llc | Compliant conductive nano-particle electrical interconnect |
WO2010141296A1 (en) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Compliant printed circuit semiconductor package |
US9603249B2 (en) | 2009-06-02 | 2017-03-21 | Hsio Technologies, Llc | Direct metalization of electrical circuit structures |
US9196980B2 (en) | 2009-06-02 | 2015-11-24 | Hsio Technologies, Llc | High performance surface mount electrical interconnect with external biased normal force loading |
WO2012074963A1 (en) | 2010-12-01 | 2012-06-07 | Hsio Technologies, Llc | High performance surface mount electrical interconnect |
WO2010141313A1 (en) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Compliant printed circuit socket diagnostic tool |
WO2010141295A1 (en) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Compliant printed flexible circuit |
US9277654B2 (en) | 2009-06-02 | 2016-03-01 | Hsio Technologies, Llc | Composite polymer-metal electrical contacts |
WO2014011226A1 (en) | 2012-07-10 | 2014-01-16 | Hsio Technologies, Llc | Hybrid printed circuit assembly with low density main core and embedded high density circuit regions |
US8988093B2 (en) | 2009-06-02 | 2015-03-24 | Hsio Technologies, Llc | Bumped semiconductor wafer or die level electrical interconnect |
US8955216B2 (en) | 2009-06-02 | 2015-02-17 | Hsio Technologies, Llc | Method of making a compliant printed circuit peripheral lead semiconductor package |
WO2010141318A1 (en) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Compliant printed circuit peripheral lead semiconductor test socket |
US8987886B2 (en) | 2009-06-02 | 2015-03-24 | Hsio Technologies, Llc | Copper pillar full metal via electrical circuit structure |
US8970031B2 (en) | 2009-06-16 | 2015-03-03 | Hsio Technologies, Llc | Semiconductor die terminal |
WO2010141297A1 (en) | 2009-06-02 | 2010-12-09 | Hsio Technologies, Llc | Compliant printed circuit wafer level semiconductor package |
US9054097B2 (en) | 2009-06-02 | 2015-06-09 | Hsio Technologies, Llc | Compliant printed circuit area array semiconductor device package |
US9276339B2 (en) | 2009-06-02 | 2016-03-01 | Hsio Technologies, Llc | Electrical interconnect IC device socket |
US9318862B2 (en) | 2009-06-02 | 2016-04-19 | Hsio Technologies, Llc | Method of making an electronic interconnect |
US9232654B2 (en) | 2009-06-02 | 2016-01-05 | Hsio Technologies, Llc | High performance electrical circuit structure |
US9930775B2 (en) | 2009-06-02 | 2018-03-27 | Hsio Technologies, Llc | Copper pillar full metal via electrical circuit structure |
US9613841B2 (en) | 2009-06-02 | 2017-04-04 | Hsio Technologies, Llc | Area array semiconductor device package interconnect structure with optional package-to-package or flexible circuit to package connection |
US8803539B2 (en) | 2009-06-03 | 2014-08-12 | Hsio Technologies, Llc | Compliant wafer level probe assembly |
WO2010147782A1 (en) | 2009-06-16 | 2010-12-23 | Hsio Technologies, Llc | Simulated wirebond semiconductor package |
US9320144B2 (en) | 2009-06-17 | 2016-04-19 | Hsio Technologies, Llc | Method of forming a semiconductor socket |
US8984748B2 (en) | 2009-06-29 | 2015-03-24 | Hsio Technologies, Llc | Singulated semiconductor device separable electrical interconnect |
CN104656977B (en) | 2009-10-28 | 2018-01-26 | 伊英克公司 | Electro-optic displays with touch sensor |
US8654436B1 (en) | 2009-10-30 | 2014-02-18 | E Ink Corporation | Particles for use in electrophoretic displays |
US8446664B2 (en) | 2010-04-02 | 2013-05-21 | E Ink Corporation | Electrophoretic media, and materials for use therein |
KR101793352B1 (en) | 2010-04-09 | 2017-11-02 | 이 잉크 코포레이션 | Methods for driving electro-optic displays |
TWI484275B (en) | 2010-05-21 | 2015-05-11 | E Ink Corp | Electro-optic display, method for driving the same and microcavity electrophoretic display |
US8758067B2 (en) | 2010-06-03 | 2014-06-24 | Hsio Technologies, Llc | Selective metalization of electrical connector or socket housing |
US10159154B2 (en) | 2010-06-03 | 2018-12-18 | Hsio Technologies, Llc | Fusion bonded liquid crystal polymer circuit structure |
US9689897B2 (en) | 2010-06-03 | 2017-06-27 | Hsio Technologies, Llc | Performance enhanced semiconductor socket |
US9350093B2 (en) | 2010-06-03 | 2016-05-24 | Hsio Technologies, Llc | Selective metalization of electrical connector or socket housing |
TWI445175B (en) * | 2011-11-11 | 2014-07-11 | Au Optronics Corp | Active element |
US20130125910A1 (en) | 2011-11-18 | 2013-05-23 | Avon Products, Inc. | Use of Electrophoretic Microcapsules in a Cosmetic Composition |
WO2013159093A1 (en) | 2012-04-20 | 2013-10-24 | E Ink Corporation | Illumination systems for reflective displays |
US11467466B2 (en) | 2012-04-20 | 2022-10-11 | E Ink Corporation | Illumination systems for reflective displays |
TWI459567B (en) * | 2012-06-08 | 2014-11-01 | Au Optronics Corp | Active device, driving circuit structure, and display panel |
US9761520B2 (en) | 2012-07-10 | 2017-09-12 | Hsio Technologies, Llc | Method of making an electrical connector having electrodeposited terminals |
WO2014110394A1 (en) | 2013-01-10 | 2014-07-17 | E Ink Corporation | Electro-optic display with controlled electrochemical reactions |
US9715155B1 (en) | 2013-01-10 | 2017-07-25 | E Ink Corporation | Electrode structures for electro-optic displays |
KR102072803B1 (en) * | 2013-04-12 | 2020-02-04 | 삼성디스플레이 주식회사 | Thin film semiconductor device and organic light emitting display |
US10667410B2 (en) | 2013-07-11 | 2020-05-26 | Hsio Technologies, Llc | Method of making a fusion bonded circuit structure |
US10506722B2 (en) | 2013-07-11 | 2019-12-10 | Hsio Technologies, Llc | Fusion bonded liquid crystal polymer electrical circuit structure |
CN105917265B (en) | 2014-01-17 | 2019-01-15 | 伊英克公司 | Electro-optic displays with two-phase electrode layer |
US10317767B2 (en) | 2014-02-07 | 2019-06-11 | E Ink Corporation | Electro-optic display backplane structure with drive components and pixel electrodes on opposed surfaces |
KR20160119195A (en) | 2014-02-07 | 2016-10-12 | 이 잉크 코포레이션 | Electro-optic display backplane structures |
US10446585B2 (en) | 2014-03-17 | 2019-10-15 | E Ink Corporation | Multi-layer expanding electrode structures for backplane assemblies |
US9496171B2 (en) | 2014-09-26 | 2016-11-15 | Texas Instruments Incorporated | Printed interconnects for semiconductor packages |
CN104332490A (en) * | 2014-10-27 | 2015-02-04 | 重庆京东方光电科技有限公司 | Thin film transistor |
ES2959493T3 (en) | 2014-11-07 | 2024-02-26 | E Ink Corp | Electro-optic tile |
US9835925B1 (en) | 2015-01-08 | 2017-12-05 | E Ink Corporation | Electro-optic displays, and processes for the production thereof |
CN104600124A (en) * | 2015-01-21 | 2015-05-06 | 重庆京东方光电科技有限公司 | Thin film transistor structure, manufacturing method thereof, array substrate and mask plate |
US10475396B2 (en) | 2015-02-04 | 2019-11-12 | E Ink Corporation | Electro-optic displays with reduced remnant voltage, and related apparatus and methods |
US9755335B2 (en) | 2015-03-18 | 2017-09-05 | Hsio Technologies, Llc | Low profile electrical interconnect with fusion bonded contact retention and solder wick reduction |
US10997930B2 (en) | 2015-05-27 | 2021-05-04 | E Ink Corporation | Methods and circuitry for driving display devices |
EP3314328B1 (en) | 2015-06-29 | 2021-03-03 | E Ink Corporation | Electro-optic display device and method of manufacturing thereof |
US10527899B2 (en) | 2016-05-31 | 2020-01-07 | E Ink Corporation | Backplanes for electro-optic displays |
WO2018160546A1 (en) | 2017-02-28 | 2018-09-07 | E Ink Corporation | Writeable electrophoretic displays including sensing circuits and styli configured to interact with sensing circuits |
WO2018183240A1 (en) | 2017-03-28 | 2018-10-04 | E Ink Corporation | Porous backplane for electro-optic display |
CN107204375B (en) * | 2017-05-19 | 2019-11-26 | 深圳市华星光电技术有限公司 | Thin film transistor and its manufacturing method |
TWI682261B (en) | 2017-05-19 | 2020-01-11 | 美商電子墨水股份有限公司 | Foldable electro-optic display including digitization and touch sensing |
EP3631575A4 (en) | 2017-05-30 | 2021-01-13 | E Ink Corporation | Electro-optic displays |
US11404013B2 (en) | 2017-05-30 | 2022-08-02 | E Ink Corporation | Electro-optic displays with resistors for discharging remnant charges |
US10882042B2 (en) | 2017-10-18 | 2021-01-05 | E Ink Corporation | Digital microfluidic devices including dual substrates with thin-film transistors and capacitive sensing |
US10824042B1 (en) | 2017-10-27 | 2020-11-03 | E Ink Corporation | Electro-optic display and composite materials having low thermal sensitivity for use therein |
CN111226163B (en) | 2017-11-03 | 2021-10-22 | 伊英克公司 | Process for producing electro-optic displays |
US11081066B2 (en) | 2018-02-15 | 2021-08-03 | E Ink Corporation | Via placement for slim border electro-optic display backplanes with decreased capacitive coupling between t-wires and pixel electrodes |
US11175561B1 (en) | 2018-04-12 | 2021-11-16 | E Ink Corporation | Electrophoretic display media with network electrodes and methods of making and using the same |
US11353759B2 (en) | 2018-09-17 | 2022-06-07 | Nuclera Nucleics Ltd. | Backplanes with hexagonal and triangular electrodes |
KR102577837B1 (en) | 2018-10-15 | 2023-09-12 | 이 잉크 코포레이션 | Digital microfluidic delivery device |
US11145262B2 (en) | 2018-11-09 | 2021-10-12 | E Ink Corporation | Electro-optic displays |
EP3894934A4 (en) | 2018-12-13 | 2022-07-20 | E Ink Corporation | Illumination systems for reflective displays |
TWI728631B (en) | 2018-12-28 | 2021-05-21 | 美商電子墨水股份有限公司 | Electro-optic displays |
EP3903303A4 (en) | 2018-12-30 | 2022-09-07 | E Ink California, LLC | Electro-optic displays |
CN111312805B (en) | 2019-11-01 | 2021-07-06 | 深圳市华星光电半导体显示技术有限公司 | Thin film transistor structure, GOA circuit and display device |
JP7407293B2 (en) | 2020-02-07 | 2023-12-28 | イー インク コーポレイション | Electrophoretic display layer with thin film top electrode |
JP2023529136A (en) | 2020-06-03 | 2023-07-07 | イー インク コーポレイション | A foldable electrophoretic display module including a non-conductive support plate |
TW202314665A (en) | 2021-08-18 | 2023-04-01 | 美商電子墨水股份有限公司 | Methods for driving electro-optic displays |
WO2023164078A1 (en) | 2022-02-25 | 2023-08-31 | E Ink Corporation | Electro-optic displays with edge seal components and methods of making the same |
US11830449B2 (en) | 2022-03-01 | 2023-11-28 | E Ink Corporation | Electro-optic displays |
US20230350263A1 (en) | 2022-04-27 | 2023-11-02 | E Ink Corporation | Electro-optic display stacks with segmented electrodes and methods of making the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5705826A (en) * | 1994-06-28 | 1998-01-06 | Hitachi, Ltd. | Field-effect transistor having a semiconductor layer made of an organic compound |
WO1998003896A1 (en) * | 1996-07-19 | 1998-01-29 | E-Ink Corporation | Electronically addressable microencapsulated ink and display thereof |
US5847413A (en) * | 1994-08-31 | 1998-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Differential amplifier circuit and analog buffer |
US5874746A (en) * | 1995-07-31 | 1999-02-23 | Hyundai Electronics America, Inc. | TFT, method of making and matrix displays incorporating the TFT |
WO2000008689A1 (en) * | 1998-08-05 | 2000-02-17 | Koninklijke Philips Electronics N.V. | Thin film transistors |
Family Cites Families (119)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US14763A (en) * | 1856-04-29 | Improvement in cigar-machines | ||
US12585A (en) * | 1855-03-27 | Improvement in processes for refining jewelers scraps | ||
US8689A (en) * | 1852-01-27 | Railroad-switch | ||
US53371A (en) * | 1866-03-20 | Improvement in attaching seats to the beds of vehicles | ||
US323656A (en) * | 1885-08-04 | Snow-plow | ||
US240063A (en) * | 1881-04-12 | End-gate for wagons | ||
US66551A (en) * | 1867-07-09 | Daniel s | ||
US396937A (en) * | 1889-01-29 | Top-prop for vehicles | ||
US537240A (en) * | 1895-04-09 | The national hardware | ||
US402269A (en) * | 1889-04-30 | Baling-press | ||
US135A (en) * | 1837-03-03 | Jesse j | ||
US375005A (en) * | 1887-12-20 | Metallic railway-tie | ||
US66540A (en) * | 1867-07-09 | Maximilian wappich | ||
US63527A (en) * | 1867-04-02 | Improved apparatus foe bleaching cake juice | ||
US10939A (en) * | 1854-05-16 | Lathe-dog | ||
US190001A (en) * | 1877-04-24 | Improvement in neck-tie retainers | ||
US44229A (en) * | 1864-09-13 | Improved means of securing a uniform temperature in packing and preserving houses | ||
US408105A (en) * | 1889-07-30 | Mold foe casting wheels | ||
US8402A (en) * | 1851-09-30 | Shield for valves | ||
US3896A (en) * | 1845-01-31 | Improvement in metallic compositions for bearings of machinery | ||
US442123A (en) * | 1890-12-09 | Molding-machine | ||
US55897A (en) * | 1866-06-26 | Improved book-holder | ||
US14762A (en) * | 1856-04-29 | Earth | ||
US1195790A (en) * | 1916-08-22 | Island | ||
US825657A (en) * | 1902-05-31 | 1906-07-10 | Julian Kennedy | Universal mill. |
US802217A (en) * | 1905-01-09 | 1905-10-17 | Jorgen Jorgensen | Hay-stacker. |
US852403A (en) * | 1905-06-24 | 1907-04-30 | Pressed Prism Plate Glass Co | Grinding and polishing machine. |
US962984A (en) * | 1909-11-16 | 1910-06-28 | John Schuller | Rotary steam-engine. |
US981165A (en) * | 1910-03-21 | 1911-01-10 | Everett S Cameron | Valve-action for explosive-engines. |
US1014268A (en) * | 1911-06-20 | 1912-01-09 | Arthur E Kenison | Combined transmitter and receiver. |
US3967305A (en) * | 1969-03-27 | 1976-06-29 | Mcdonnell Douglas Corporation | Multichannel junction field-effect transistor and process |
US4087795A (en) * | 1974-09-20 | 1978-05-02 | Siemens Aktiengesellschaft | Memory field effect storage device |
FR2527843B1 (en) | 1982-06-01 | 1986-01-24 | Thomson Csf | ELECTRODE COMPRISING AN ELECTROCHROMIC POLYMER FILM WHICH CAN BE USED IN AN ENERGY STORAGE OR DISPLAY DEVICE |
FR2527844B1 (en) | 1982-06-01 | 1986-01-24 | Thomson Csf | ELECTROCHROMIC DEVICE THAT CAN BE USED FOR ENERGY STORAGE AND ELECTROCHROMIC DISPLAY SYSTEM |
US4439507A (en) | 1982-09-21 | 1984-03-27 | Xerox Corporation | Layered photoresponsive imaging device with photogenerating pigments dispersed in a polyhydroxy ether composition |
US4543320A (en) * | 1983-11-08 | 1985-09-24 | Energy Conversion Devices, Inc. | Method of making a high performance, small area thin film transistor |
FR2593631B1 (en) * | 1986-01-27 | 1989-02-17 | Maurice Francois | GRID RESISTANT ACTIVE MATRIX DISPLAY SCREEN AND METHODS OF MAKING SAME |
FR2596566B1 (en) | 1986-04-01 | 1989-03-10 | Solvay | CONDUCTIVE POLYMERS DERIVED FROM 3-ALKYLTHIOPHENES, PROCESS FOR THEIR MANUFACTURE AND ELECTRICALLY CONDUCTIVE DEVICES CONTAINING THEM |
EP0323656B1 (en) | 1987-12-07 | 1993-04-07 | Solvay | Conductive polymers from heterocyclic aromatic compounds substitued with an ether group, process for their obtention, device containing these polymers, and monomers allowing to obtain such polymers |
US5006212A (en) | 1988-03-10 | 1991-04-09 | Copytele, Inc. | Methods enabling stress crack free patterning of chrome on layers of organic polymers |
FR2640626B1 (en) | 1988-12-16 | 1991-02-08 | Solvay | SUBSTITUTED THIOPHENES, CONDUCTIVE POLYMERS DERIVED FROM SUCH THIOPHENES, PROCESS FOR OBTAINING SAME, AND DEVICES CONTAINING THESE POLYMERS |
WO1990008402A1 (en) | 1989-01-10 | 1990-07-26 | Mitsubishi Denki Kabushiki Kaisha | Fet transistor and liquid crystal display device obtained by using the same |
JPH02274723A (en) | 1989-04-18 | 1990-11-08 | Nippon Oil Co Ltd | 3-substituted pyrrole polymer |
FR2648140B1 (en) | 1989-06-08 | 1991-05-03 | Centre Nat Rech Scient | PROCESS FOR THE PREPARATION OF OLIGOMERS OF AROMATIC HETEROCYCLES BY OXIDIZING COUPLING OF LOWER OLIGOMERS |
FR2649396B1 (en) | 1989-07-10 | 1994-07-29 | Solvay | FLUORINATED THIOPHENES, CONDUCTIVE POLYMERS DERIVED FROM SUCH THIOPHENES, PROCESS FOR OBTAINING SAME AND DEVICES CONTAINING THESE POLYMERS |
US5268448A (en) | 1989-07-10 | 1993-12-07 | Solvay S.A. | Conducting polymers derived from fluorinated thiophenes |
FI91573C (en) | 1990-01-04 | 1994-07-11 | Neste Oy | Method for manufacturing electronic and electro-optical components and circuits |
JPH03205422A (en) | 1990-01-08 | 1991-09-06 | Nippon Oil Co Ltd | Poly((3-pyrrolyl)acetic acid) |
FR2664430B1 (en) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | THIN FILM FIELD EFFECT TRANSISTOR WITH MIS STRUCTURE, IN WHICH THE INSULATION AND THE SEMICONDUCTOR ARE MADE OF ORGANIC MATERIALS. |
US5946561A (en) * | 1991-03-18 | 1999-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US5302987A (en) * | 1991-05-15 | 1994-04-12 | Sharp Kabushiki Kaisha | Active matrix substrate including connecting electrode with extended portion |
JP2907629B2 (en) * | 1992-04-10 | 1999-06-21 | 松下電器産業株式会社 | LCD panel |
US5828082A (en) * | 1992-04-29 | 1998-10-27 | Industrial Technology Research Institute | Thin film transistor having dual insulation layer with a window above gate electrode |
CN100442532C (en) * | 1992-07-06 | 2008-12-10 | 株式会社半导体能源研究所 | Semiconductor device and method for forming the same |
JP3437863B2 (en) * | 1993-01-18 | 2003-08-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing MIS type semiconductor device |
JP3512849B2 (en) * | 1993-04-23 | 2004-03-31 | 株式会社東芝 | Thin film transistor and display device using the same |
JP2762215B2 (en) * | 1993-08-12 | 1998-06-04 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film transistor and semiconductor device |
US5414283A (en) * | 1993-11-19 | 1995-05-09 | Ois Optical Imaging Systems, Inc. | TFT with reduced parasitic capacitance |
JP3322738B2 (en) * | 1993-12-08 | 2002-09-09 | 株式会社半導体エネルギー研究所 | Semiconductor device, integrated circuit, and display device |
US6265249B1 (en) * | 1994-03-01 | 2001-07-24 | Industrial Technology Research Institute | Method of manufacturing thin film transistors |
US5610737A (en) * | 1994-03-07 | 1997-03-11 | Kabushiki Kaisha Toshiba | Thin film transistor with source and drain regions having two semiconductor layers, one being fine crystalline silicon |
JPH07294961A (en) * | 1994-04-22 | 1995-11-10 | Semiconductor Energy Lab Co Ltd | Drive circuit and design method for active matrix type display device |
US5796116A (en) * | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
TW293172B (en) | 1994-12-09 | 1996-12-11 | At & T Corp | |
US5574291A (en) | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
JPH08172202A (en) * | 1994-12-20 | 1996-07-02 | Sharp Corp | Thin film transistor and manufacture thereof |
WO1996022616A1 (en) * | 1995-01-19 | 1996-07-25 | Litton Systems (Canada) Limited | Flat panel imaging device |
US5536932A (en) * | 1995-02-10 | 1996-07-16 | Xerox Corporation | Polysilicon multiplexer for two-dimensional image sensor arrays |
US5599695A (en) * | 1995-02-27 | 1997-02-04 | Affymetrix, Inc. | Printing molecular library arrays using deprotection agents solely in the vapor phase |
US5659181A (en) | 1995-03-02 | 1997-08-19 | Lucent Technologies Inc. | Article comprising α-hexathienyl |
EP0732757A3 (en) | 1995-03-15 | 1998-03-18 | AT&T Corp. | N-channel field-effect transistor including a thin-film fullerene |
US5641974A (en) * | 1995-06-06 | 1997-06-24 | Ois Optical Imaging Systems, Inc. | LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween |
NO302987B1 (en) | 1995-07-18 | 1998-05-11 | Opticom As | Optical logic element and methods for its preparation and optical addressing, respectively, and use thereof in an optical logic device |
US6017584A (en) * | 1995-07-20 | 2000-01-25 | E Ink Corporation | Multi-color electrophoretic displays and materials for making the same |
JPH0990424A (en) * | 1995-09-19 | 1997-04-04 | Sony Corp | Thin-film semiconductor device |
JP3604106B2 (en) * | 1995-09-27 | 2004-12-22 | シャープ株式会社 | Liquid crystal display |
US5733804A (en) * | 1995-12-22 | 1998-03-31 | Xerox Corporation | Fabricating fully self-aligned amorphous silicon device |
JP3167605B2 (en) * | 1995-12-25 | 2001-05-21 | シャープ株式会社 | Liquid crystal display device |
US5625199A (en) | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
JP3268723B2 (en) * | 1996-03-25 | 2002-03-25 | シャープ株式会社 | Active matrix substrate and liquid crystal display |
DE19615134C2 (en) | 1996-04-17 | 2003-04-17 | Continental Ag | Adhesion promoter substance between vulcanizable polymer and metallic reinforcement, process for their application and their use |
US5696376A (en) * | 1996-05-20 | 1997-12-09 | The Johns Hopkins University | Method and apparatus for isolating ions in an ion trap with increased resolving power |
CN1182435C (en) | 1996-06-12 | 2004-12-29 | 奥普蒂科姆公司 | Optical logic element and optical logic device |
NO304859B1 (en) | 1997-06-06 | 1999-02-22 | Opticom As | Optical logic element and methods for its preparation and optical addressing, respectively, and its use in an optical logic device |
US5834344A (en) * | 1996-07-17 | 1998-11-10 | Industrial Technology Research Institute | Method for forming high performance thin film transistor structure |
US6323989B1 (en) * | 1996-07-19 | 2001-11-27 | E Ink Corporation | Electrophoretic displays using nanoparticles |
US6057038A (en) * | 1996-08-02 | 2000-05-02 | Sharp Kabushiki Kaisha | Substrate for use in display element, method of manufacturing the same, and apparatus for manufacturing the same |
US5969376A (en) | 1996-08-23 | 1999-10-19 | Lucent Technologies Inc. | Organic thin film transistor having a phthalocyanine semiconductor layer |
SE513046C2 (en) | 1996-09-17 | 2000-06-26 | Ericsson Telefon Ab L M | Process for producing an optocomponent and the component as such |
KR19980032958A (en) | 1996-10-15 | 1998-07-25 | 스코트 리트만 | Device with thin film transistor containing N type organic semiconductor compound |
JPH10142628A (en) | 1996-11-07 | 1998-05-29 | Matsushita Electric Ind Co Ltd | Active matrix substrate and manufacture thereof |
US5721164A (en) * | 1996-11-12 | 1998-02-24 | Industrial Technology Research Institute | Method of manufacturing thin film transistors |
JP3833322B2 (en) * | 1996-11-25 | 2006-10-11 | 株式会社松井色素化学工業所 | Temperature-sensitive color-changing ultraviolet curable ink composition |
KR100250795B1 (en) * | 1996-11-29 | 2000-04-01 | 김영환 | Liquid crystal display element and its manufacturing method |
US6107117A (en) * | 1996-12-20 | 2000-08-22 | Lucent Technologies Inc. | Method of making an organic thin film transistor |
US6980196B1 (en) * | 1997-03-18 | 2005-12-27 | Massachusetts Institute Of Technology | Printable electronic display |
EP0968537B1 (en) | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
NO973993L (en) | 1997-09-01 | 1999-03-02 | Opticom As | Reading memory and reading memory devices |
US6107641A (en) * | 1997-09-10 | 2000-08-22 | Xerox Corporation | Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
TW408246B (en) * | 1997-09-12 | 2000-10-11 | Sanyo Electric Co | Semiconductor device and display device having laser-annealed semiconductor element |
US5936259A (en) | 1997-10-16 | 1999-08-10 | Lucent Technologies Inc. | Thin film transistor and organic semiconductor material thereof |
EP1051745B1 (en) | 1998-01-28 | 2007-11-07 | Thin Film Electronics ASA | A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating |
NO308149B1 (en) | 1998-06-02 | 2000-07-31 | Thin Film Electronics Asa | Scalable, integrated data processing device |
US6165383A (en) * | 1998-04-10 | 2000-12-26 | Organic Display Technology | Useful precursors for organic electroluminescent materials and devices made from such materials |
DE69918308T2 (en) | 1998-04-10 | 2004-10-21 | E Ink Corp | ELECTRONIC DISPLAY BASED ON ORGANIC FIELD EFFECT TRANSISTORS |
US6504175B1 (en) * | 1998-04-28 | 2003-01-07 | Xerox Corporation | Hybrid polycrystalline and amorphous silicon structures on a shared substrate |
US5917199A (en) * | 1998-05-15 | 1999-06-29 | Ois Optical Imaging Systems, Inc. | Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same |
TW410478B (en) | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
KR100393324B1 (en) | 1998-06-19 | 2003-07-31 | 띤 필름 일렉트로닉스 에이에스에이 | An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production |
US6136128A (en) * | 1998-06-23 | 2000-10-24 | Amerasia International Technology, Inc. | Method of making an adhesive preform lid for electronic devices |
US6215130B1 (en) | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
US6312304B1 (en) * | 1998-12-15 | 2001-11-06 | E Ink Corporation | Assembly of microencapsulated electronic displays |
US6274412B1 (en) * | 1998-12-21 | 2001-08-14 | Parelec, Inc. | Material and method for printing high conductivity electrical conductors and other components on thin film transistor arrays |
JP3362008B2 (en) * | 1999-02-23 | 2003-01-07 | シャープ株式会社 | Liquid crystal display device and manufacturing method thereof |
JP2001036087A (en) * | 1999-07-15 | 2001-02-09 | Seiko Epson Corp | Active matrix substrate, electrooptical device, and electronics |
US6278142B1 (en) * | 1999-08-30 | 2001-08-21 | Isetex, Inc | Semiconductor image intensifier |
JP4472073B2 (en) * | 1999-09-03 | 2010-06-02 | 株式会社半導体エネルギー研究所 | Display device and manufacturing method thereof |
US6197663B1 (en) * | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
JP4104800B2 (en) * | 1999-12-08 | 2008-06-18 | 三菱電機株式会社 | Liquid crystal display device and TFT panel |
-
2000
- 2000-08-30 US US09/650,620 patent/US6545291B1/en not_active Expired - Fee Related
- 2000-08-30 AU AU70914/00A patent/AU7091400A/en not_active Abandoned
- 2000-08-30 JP JP2001520475A patent/JP2003508807A/en active Pending
- 2000-08-30 EP EP00959627A patent/EP1208603A1/en not_active Withdrawn
- 2000-08-30 WO PCT/US2000/023834 patent/WO2001017029A1/en active Application Filing
-
2003
- 2003-01-30 US US10/354,721 patent/US6750473B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5705826A (en) * | 1994-06-28 | 1998-01-06 | Hitachi, Ltd. | Field-effect transistor having a semiconductor layer made of an organic compound |
US5847413A (en) * | 1994-08-31 | 1998-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Differential amplifier circuit and analog buffer |
US5874746A (en) * | 1995-07-31 | 1999-02-23 | Hyundai Electronics America, Inc. | TFT, method of making and matrix displays incorporating the TFT |
WO1998003896A1 (en) * | 1996-07-19 | 1998-01-29 | E-Ink Corporation | Electronically addressable microencapsulated ink and display thereof |
WO2000008689A1 (en) * | 1998-08-05 | 2000-02-17 | Koninklijke Philips Electronics N.V. | Thin film transistors |
Non-Patent Citations (5)
Title |
---|
DODABALAPUR A ET AL: "ORGANIC SMART PIXELS", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 73, no. 2, 13 July 1998 (1998-07-13), pages 142 - 144, XP000771188, ISSN: 0003-6951 * |
GARNIER F ET AL: "ALL-POLYMER FIELD-EFFECT TRANSISTOR REALIZED BY PRINTING TECHNIQUES", SCIENCE,AMERICAN ASSOCIATION FOR THE ADVANCEMENT OF SCIENCE,,US, vol. 265, 16 September 1994 (1994-09-16), pages 1684 - 1686, XP000783907, ISSN: 0036-8075 * |
KOEZUKA H ET AL: "MACROMOLECULAR ELECTRONIC DEVICE", MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY. SECTION A. MOLECULAR CRYSTALS AND LIQUID CRYSTALS,CH,GORDON AND BREACH PUBLISHERS, CH, vol. 255, 17 November 1993 (1993-11-17), pages 221 - 230, XP002055362, ISSN: 1058-725X * |
See also references of EP1208603A1 * |
TORSI L ET AL: "CHARGE TRANSPORT IN OLIGOTHIOPHENE FIELD-EFFECT TRANSISTORS", PHYSICAL REVIEW, B. CONDENSED MATTER,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 57, no. 4, 15 January 1998 (1998-01-15), pages 2271 - 2275, XP000769614, ISSN: 0163-1829 * |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7068418B2 (en) | 2001-01-31 | 2006-06-27 | Seiko Epson Corporation | Display device |
WO2002061837A3 (en) * | 2001-01-31 | 2003-02-20 | Seiko Epson Corp | Modular display device and organic thin-film transistor |
WO2002061837A2 (en) * | 2001-01-31 | 2002-08-08 | Seiko Epson Corporation | Modular display device and organic thin-film transistor |
US8139005B2 (en) | 2001-01-31 | 2012-03-20 | Seiko Epson Corporation | Display device |
US7468580B2 (en) | 2001-01-31 | 2008-12-23 | Seiko Epson Corporation | Display device |
US7170670B2 (en) | 2001-04-02 | 2007-01-30 | E Ink Corporation | Electrophoretic medium and display with improved image stability |
US6580545B2 (en) | 2001-04-19 | 2003-06-17 | E Ink Corporation | Electrochromic-nanoparticle displays |
US7180649B2 (en) | 2001-04-19 | 2007-02-20 | E Ink Corporation | Electrochromic-nanoparticle displays |
US8154015B2 (en) | 2001-11-09 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device including thin film transistor |
US8324618B2 (en) | 2001-11-09 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US11063102B2 (en) | 2001-11-09 | 2021-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US10680049B2 (en) | 2001-11-09 | 2020-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US10461140B2 (en) | 2001-11-09 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9905624B2 (en) | 2001-11-09 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9577016B2 (en) | 2001-11-09 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2015179853A (en) * | 2001-11-09 | 2015-10-08 | 株式会社半導体エネルギー研究所 | light-emitting device |
US9054199B2 (en) | 2001-11-09 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8648338B2 (en) | 2001-11-09 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising an organic compound layer |
EP2916312A1 (en) | 2001-11-20 | 2015-09-09 | E Ink Corporation | Methods for driving bistable electro-optic displays |
US6885032B2 (en) | 2001-11-21 | 2005-04-26 | Visible Tech-Knowledgy, Inc. | Display assembly having flexible transistors on a flexible substrate |
JP2014067046A (en) * | 2002-01-18 | 2014-04-17 | Semiconductor Energy Lab Co Ltd | Light emitting device |
JP2016177304A (en) * | 2002-01-18 | 2016-10-06 | 株式会社半導体エネルギー研究所 | Light-emitting device |
US10978613B2 (en) | 2002-01-18 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US8723760B2 (en) | 2002-01-18 | 2014-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP2013080233A (en) * | 2002-01-18 | 2013-05-02 | Semiconductor Energy Lab Co Ltd | Light-emitting device |
WO2003098696A1 (en) * | 2002-05-17 | 2003-11-27 | Seiko Epson Corporation | Circuit fabrication method |
US7198885B2 (en) | 2002-05-17 | 2007-04-03 | Seiko Epson Corporation | Circuit fabrication method |
WO2004068608A2 (en) * | 2003-01-14 | 2004-08-12 | Polyic Gmbh & Co. Kg | Organic field effect transistor and integrated circuit |
WO2004068608A3 (en) * | 2003-01-14 | 2004-10-14 | Siemens Ag | Organic field effect transistor and integrated circuit |
WO2004066349A2 (en) * | 2003-01-21 | 2004-08-05 | Polyic Gmbh & Co. Kg | Functional layer of an organic field effect transistor with compensation for printing-related defects |
WO2004066349A3 (en) * | 2003-01-21 | 2005-01-20 | Siemens Ag | Functional layer of an organic field effect transistor with compensation for printing-related defects |
US7968887B2 (en) | 2005-04-21 | 2011-06-28 | Samsung Mobile Display Co., Ltd. | Active matrix circuit substrate, method of manufacturing the same, and active matrix display including the active matrix circuit substrate |
EP1715374A1 (en) * | 2005-04-21 | 2006-10-25 | Samsung SDI Germany GmbH | Active matrix circuit, active matrix display and method for manufacturing the same |
US8217432B2 (en) | 2006-10-06 | 2012-07-10 | Polyic Gmbh & Co. Kg | Field effect transistor and electric circuit |
US7851803B2 (en) | 2008-04-04 | 2010-12-14 | Fujifilm Corporation | Semiconductor device, manufacturing method of semiconductor device, and display device |
WO2021168131A1 (en) * | 2020-02-18 | 2021-08-26 | Nuclear Nucleics Ltd. | Adaptive gate driving for high frequency ac driving of ewod arrays |
US11410620B2 (en) | 2020-02-18 | 2022-08-09 | Nuclera Nucleics Ltd. | Adaptive gate driving for high frequency AC driving of EWoD arrays |
WO2021168162A1 (en) * | 2020-02-19 | 2021-08-26 | Nuclera Nucleics Ltd. | Latched transistor driving for high frequency ac driving of ewod arrays |
Also Published As
Publication number | Publication date |
---|---|
EP1208603A1 (en) | 2002-05-29 |
US6750473B2 (en) | 2004-06-15 |
JP2003508807A (en) | 2003-03-04 |
US20030141500A1 (en) | 2003-07-31 |
AU7091400A (en) | 2001-03-26 |
US6545291B1 (en) | 2003-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6750473B2 (en) | Transistor design for use in the construction of an electronically driven display | |
US7859637B2 (en) | Use of a storage capacitor to enhance the performance of an active matrix driven electronic display | |
US7030412B1 (en) | Minimally-patterned semiconductor devices for display applications | |
US9740076B2 (en) | Multi-color electrophoretic displays | |
US7256766B2 (en) | Electrophoretic display comprising optical biasing element | |
US6312304B1 (en) | Assembly of microencapsulated electronic displays | |
EP1105772B1 (en) | Electronic displays using organic-based field effect transistors | |
US6683333B2 (en) | Fabrication of electronic circuit elements using unpatterned semiconductor layers | |
US6842167B2 (en) | Rear electrode structures for displays | |
US8089453B2 (en) | Stylus-based addressing structures for displays | |
US7304634B2 (en) | Rear electrode structures for electrophoretic displays | |
US7956841B2 (en) | Stylus-based addressing structures for displays | |
US7825403B2 (en) | Circuit board including a substrate with a recessed portion and manufacturing method thereof, electro-optical device and electronic apparatus | |
US6664944B1 (en) | Rear electrode structures for electrophoretic displays | |
EP1145072B1 (en) | Method of addressing microencapsulated display media | |
WO2000038000A1 (en) | Method of manufacturing of a discrete electronic device | |
WO1999010768A1 (en) | Novel addressing schemes for electrophoretic displays | |
WO2000067327A1 (en) | Minimally-patterned semiconductor devices for display applications | |
KR100634077B1 (en) | Assembly of microencapsulated electronic display | |
EP1507165A1 (en) | Novel addressing schemes for electrophoretic displays |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2000959627 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2001 520475 Kind code of ref document: A Format of ref document f/p: F |
|
WWP | Wipo information: published in national office |
Ref document number: 2000959627 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |